| Project/Area Number |
19J13441
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| Research Category |
Grant-in-Aid for JSPS Fellows
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| Allocation Type | Single-year Grants |
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| Section | 国内 |
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| Review Section |
Basic Section 21050:Electric and electronic materials-related
|
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| Research Institution | The University of Tokyo |
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Principal Investigator |
柳 銘 東京大学, 工学系研究科, 特別研究員(PD)
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| Project Period (FY) |
2019-04-25 – 2021-03-31
|
| Project Status |
Completed (Fiscal Year 2020)
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| Budget Amount *help |
¥1,700,000 (Direct Cost: ¥1,700,000)
Fiscal Year 2020: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 2019: ¥900,000 (Direct Cost: ¥900,000)
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| Keywords | 1D heteronanotubes / SWCNT@BNNT / BNNT / 1D hetero nanotubes / Coxial structure / Carbon nanotubes / Boron nitride nanotubes / TEM |
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| Outline of Research at the Start |
The outline of research is to synthesize a coaxial material of single walled carbon nanotubes coated by boron nitride to improve the carrier mobility in plane nanotubes, reduce the interface traps between CNT and the dielectric and reduce the thermal resistrance in field emission transistors.
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| Outline of Annual Research Achievements |
The purpose of this project is to achieve the application of boron nitride coated single-walled carbon nanotubes in FET devices. We have sucessfully fabricated the device using our material. Moreover, We have also obtained high-purity and high-quality boron nitride nanotube film by removing carbon nanotubes in the heterostructure of carbon nanotube and boron nitride nanotube. Boron nitride nanotubes based heteronanotubes served as a promising platform for investigating the optical properties of transition metal dichalcogenide nanotubes, photoluminescence from molybdenum disulfide nanotubes was observed. The heteronanotubes of boron nitride nanotubes with molybdenum disulfide nanotubes have a great potential for the electronic device applications.
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| Research Progress Status |
令和2年度が最終年度であるため、記入しない。
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| Strategy for Future Research Activity |
令和2年度が最終年度であるため、記入しない。
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