• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Development of high-frequency devices using GeSiSn/GeSn quantum wells

Research Project

Project/Area Number 19K04487
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Review Section Basic Section 21050:Electric and electronic materials-related
Research InstitutionThe University of Electro-Communications

Principal Investigator

TSUKAMOTO TAKAHIRO  電気通信大学, 大学院情報理工学研究科, 助教 (50640942)

Co-Investigator(Kenkyū-buntansha) 須田 良幸  東京農工大学, 工学(系)研究科(研究院), 名誉教授 (10226582)
広瀬 信光  国立研究開発法人情報通信研究機構, 未来ICT研究所企画室, エキスパート (90212175)
Project Period (FY) 2019-04-01 – 2022-03-31
Project Status Completed (Fiscal Year 2021)
Budget Amount *help
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2021: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2020: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2019: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
KeywordsGeSiSn / GeSn / スパッタエピタキシー法 / Sn拡散 / Sn析出 / スパッタエピタキシー / ヘテロ接合 / 結晶成長 / ラマン分光法 / RTD / 半導体 / 量子効果デバイス
Outline of Research at the Start

情報量の増大や無線通信における周波数ひっ迫問題において、ミリ波帯(30-300 GHz)の高い周波数の利用が求められている。本研究計画では、低コストなⅣ族系ミリ波デバイスの開発を目指し、Ⅳ族半導体GeSiSnによる格子定数整合系ヘテロ接合を用いた低欠陥で高性能な共鳴トンネルダイオード(RTD)の開発を試み、高速無線通信やミリ波センサなど今後需要の高まるミリ波通信の発展に貢献する。

Outline of Final Research Achievements

In this study, we developed the lattice-matched group-IV heterojunction technique like a III-V semiconductor, which can control the band-gap and lattice-constant independently. This technique can be useful for high-frequency heterojunction devices. We found that the crystallinity of the GeSn(Si) layers can be improved by using the sputter epitaxy method, and this technique can help obtain excellent GeSiSn/Ge(Sn) quantum wells.

Academic Significance and Societal Importance of the Research Achievements

本研究では、スパッタエピタキシー法をGeSn(Si)結晶成長に用いることで、高品質なGeSiSn/GeSn量子井戸が提供可能であることを明らかにした。本技術により、量子効果を用いた電子デバイスだけでなく、GeSn受光・発光素子の特性向上も期待され、GeSn(Si)系半導体デバイス分野の発展が期待される。本研究を通して、無線通信や光通信技術への貢献が期待される。

Report

(4 results)
  • 2021 Annual Research Report   Final Research Report ( PDF )
  • 2020 Research-status Report
  • 2019 Research-status Report
  • Research Products

    (9 results)

All 2022 2021 2020 2019

All Journal Article (4 results) (of which Peer Reviewed: 3 results) Presentation (5 results) (of which Int'l Joint Research: 2 results)

  • [Journal Article] Direct Growth of Patterned Ge on Insulators Using Graphene2021

    • Author(s)
      Tsukamoto Takahiro、Hirose Nobumitsu、Kasamatsu Akifumi、Matsui Toshiaki、Suda Yoshiyuki
    • Journal Title

      The Journal of Physical Chemistry C

      Volume: 125 Issue: 25 Pages: 14117-14121

    • DOI

      10.1021/acs.jpcc.1c03567

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Evaluation of crystallinity of lattice-matched Ge/GeSiSn heterostructure by Raman spectroscopy2021

    • Author(s)
      Tsukamoto Takahiro、Hirose Nobumitsu、Kasamatsu Akifumi、Matsui Toshiaki、Suda Yoshiyuki
    • Journal Title

      Thin Solid Films

      Volume: 726 Pages: 138646-138646

    • DOI

      10.1016/j.tsf.2021.138646

    • Related Report
      2020 Research-status Report
    • Peer Reviewed
  • [Journal Article] Increase in Current Density at Metal/GeO2/n-Ge Structure by Using Laminated Electrode2020

    • Author(s)
      Tsukamoto Takahiro、Kurihara Shota、Hirose Nobumitsu、Kasamatsu Akifumi、Matsui Toshiaki、Suda Yoshiyuki
    • Journal Title

      Electronic Materials Letters

      Volume: 16 Issue: 1 Pages: 41-46

    • DOI

      10.1007/s13391-019-00185-0

    • Related Report
      2020 Research-status Report
  • [Journal Article] Effects of Low-Temperature GeSn Buffer Layers on Sn Surface Segregation During GeSn Epitaxial Growth2020

    • Author(s)
      Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
    • Journal Title

      Electronic Materials Letters

      Volume: 16 Issue: 1 Pages: 9-13

    • DOI

      10.1007/s13391-019-00179-y

    • Related Report
      2020 Research-status Report
    • Peer Reviewed
  • [Presentation] スパッタエピタキシー法により作製したGe/GeSnヘテロ構造におけるSn拡散2022

    • Author(s)
      塚本 貴広, 池野 憲人, 広瀬 信光, 笠松 章史, 松井 敏明, 須田 良幸
    • Organizer
      第69回応用物理学会春季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] Direct growth of patterned Ge on insulators using graphene2021

    • Author(s)
      Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
    • Organizer
      ISSS-9
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] グラフェンを用いた絶縁膜上におけるGe選択形成技術2021

    • Author(s)
      塚本 貴広,広瀬 信光,笠松 章史,松井 敏明,須田 良幸
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] スパッタエピタキシー法を用いたGe/GeSiSnヘテロ構造形成2020

    • Author(s)
      塚本貴広,広瀬信光,笠松章史,松井敏明,須田良幸
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Research-status Report
  • [Presentation] Lattice-matched GeSiSn/Ge double-barrier resonant tunneling diodes2019

    • Author(s)
      Takahiro Tsukamoto, Shota Kurihara, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
    • Organizer
      The 17th E-MRS Fall Meeting
    • Related Report
      2019 Research-status Report
    • Int'l Joint Research

URL: 

Published: 2019-04-18   Modified: 2023-01-30  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi