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Development of diamond electronic devices using AlN/diamond heterojunction

Research Project

Project/Area Number 19K04501
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Review Section Basic Section 21050:Electric and electronic materials-related
Research InstitutionNational Institute for Materials Science

Principal Investigator

IMURA Masataka  国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主任研究員 (80465971)

Project Period (FY) 2019-04-01 – 2022-03-31
Project Status Completed (Fiscal Year 2021)
Budget Amount *help
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2021: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2020: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2019: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Keywords窒化アルミニウム / ダイヤモンド / 光デバイス / 電子デバイス / 有機金属化合物気相成長法 / マイクロ波プラズマ気相成長法 / ワイドギャップ半導体 / 窒化物半導体 / 電子デバイス・電子機器 / ダイオード / 電子エミッタ / 有機金属化合物化合物気相成長法 / 原子層堆積成長法 / 原子層体積成長法 / PIN接合 / ヘテロ接合
Outline of Research at the Start

本研究では、AlN/ダイヤモンドヘテロ構造を利用したpin接合ダイオードを試作評価し、高性能ダイヤモンド電子エミッタの開発を行うことを目標とする。ここでは、n型AlNからダイヤモンド側に高濃度の電子を注入し、負性電子親和力を有すダイヤモンド水素終端表面より電子を放出させる。また結晶品質・ドーピング濃度・表面-バルク構造の最適化を行うことで、本デバイスが大面積・大電流動作可能であることを実証する。最終的には、真空スイッチとして応用することで、大電流・高耐圧パワースイッチを実現し当該分野に新規提供する。

Outline of Final Research Achievements

In this study, we improved the performance of diamond electronic devices using an aluminum nitride (AlN) / diamond pin structure and developed new functional devices. The high-crystalline-quality AlN layers were obtained on the diamond by adopting a growth temperature of 1300oC or higher using the metal-organic vapor phase epitaxy. In addition, the concentration of residual impurities in the AlN layers was controlled to be below the detection limit of SIMS. Under these conditions, the Si dopant was doped by increasing the Si concentration (flow rate) by one order of magnitude compared to the conventional method. Subsequently, current-voltage characteristics showed close to ohmic behavior by forming Ti / Al / Ti / Au electrodes on Si-doped AlN and performing post-annealing treatment at 750oC or higher in a nitrogen atmosphere.

Academic Significance and Societal Importance of the Research Achievements

窒化アルミニウム(AlN)及びダイヤモンドは材料・物質特性の観点から究極のワイドギャップ半導体であり、これら材料を用いた半導体デバイスは、自動車・無線通信・宇宙開発、医療等の幅広い分野で応用が可能である。そのため、本研究課題で得られた成果は、21 世紀の基幹技術となる次世代光・電子デバイスの開発・活性化の一翼を担うものである。

Report

(4 results)
  • 2021 Annual Research Report   Final Research Report ( PDF )
  • 2020 Research-status Report
  • 2019 Research-status Report
  • Research Products

    (20 results)

All 2022 2021 2020 2019

All Journal Article (8 results) (of which Int'l Joint Research: 2 results,  Peer Reviewed: 8 results,  Open Access: 2 results) Presentation (12 results) (of which Int'l Joint Research: 5 results,  Invited: 1 results)

  • [Journal Article] Improvement of structural quality of AlN layers grown on c-plane sapphire substrate by metal organic vapor phase epitaxy using post-growth annealing with trimethylgallium2022

    • Author(s)
      Imura Masataka、Inaba Hideki、Mano Takaaki、Ishida Nobuyuki、Uesugi Fumihiko、Kuroda Yoko、Nakayama Yoshiko、Takeguchi Masaki、Koide Yasuo
    • Journal Title

      AIP Advances

      Volume: 12 Issue: 1 Pages: 015203-015203

    • DOI

      10.1063/5.0076706

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Thermal mismatch induced stress characterization by dynamic resonance based on diamond MEMS2021

    • Author(s)
      Sun Huanying、Shen Xiulin、Sang Liwen、Imura Masataka、Koide Yasuo、You Jianqiang、Li Tie-Fu、Koizumi Satoshi、Liao Meiyong
    • Journal Title

      Applied Physics Express

      Volume: 14 Issue: 4 Pages: 045501-045501

    • DOI

      10.35848/1882-0786/abe7b0

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Temperature dependence of Young's modulus of single-crystal diamond determined by dynamic resonance2021

    • Author(s)
      Shen Xiulin、Wu Kongping、Sun Huanying、Sang Liwen、Huang Zhaohui、Imura Masataka、Koide Yasuo、Koizumi Satoshi、Liao Meiyong
    • Journal Title

      Diamond and Related Materials

      Volume: 116 Pages: 108403-108403

    • DOI

      10.1016/j.diamond.2021.108403

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Integrated TbDyFe Film on a Single‐Crystal Diamond Microelectromechanical Resonator for Magnetic Sensing2021

    • Author(s)
      Shen Xiulin、Sun Huanying、Sang Liwen、Imura Masataka、Koide Yasuo、Koizumi Satoshi、Liao Meiyong
    • Journal Title

      physica status solidi (RRL) Rapid Research Letters

      Volume: 15 Issue: 9 Pages: 2100352-2100352

    • DOI

      10.1002/pssr.202100352

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Precise characterization of atomic-scale corrosion of single crystal diamond in H2 plasma based on MEMS/NEMS2020

    • Author(s)
      Wu Haihua、Zhang Zilong、Sang Liwen、Li Tiefu、You Jianqiang、Imura Masataka、Koide Yasuo、Liao Meiyong
    • Journal Title

      Corrosion Science

      Volume: 170 Pages: 108651-108651

    • DOI

      10.1016/j.corsci.2020.108651

    • Related Report
      2020 Research-status Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors2020

    • Author(s)
      Sasama Yosuke、Kageura Taisuke、Komatsu Katsuyoshi、Moriyama Satoshi、Inoue Jun-ichi、Imura Masataka、Watanabe Kenji、Taniguchi Takashi、Uchihashi Takashi、Takahide Yamaguchi
    • Journal Title

      Journal of Applied Physics

      Volume: 127 Issue: 18 Pages: 185707-185707

    • DOI

      10.1063/5.0001868

    • Related Report
      2020 Research-status Report
    • Peer Reviewed / Open Access
  • [Journal Article] Energy‐Efficient Metal-Insulator-Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases2019

    • Author(s)
      Liao Meiyong、Sang Liwen、Shimaoka Takehiro、Imura Masataka、Koizumi Satoshi、Koide Yasuo
    • Journal Title

      Advanced Electronic Materials

      Volume: 1 Issue: 5 Pages: 1800832-1800832

    • DOI

      10.1002/aelm.201800832

    • Related Report
      2019 Research-status Report
    • Peer Reviewed
  • [Journal Article] Fabrication of coherent γ-Al_2O_3/Ga_2O_3superlattices on MgAl_2O_4substrates2019

    • Author(s)
      Y. Kato, M. Imura, Y. Nakayama, M. Takeguchi, and T. Oshima
    • Journal Title

      Applied Physics Express

      Volume: 12 Issue: 6 Pages: 1-4

    • DOI

      10.7567/1882-0786/ab2196

    • Related Report
      2019 Research-status Report
    • Peer Reviewed
  • [Presentation] TMGa添加ポストアニール処理によるc面サファイア基板上AlNの結晶品質改善.2022

    • Author(s)
      井村 将隆, 稲葉 英樹, 間野 高明, 石田 暢之, 上杉 文彦, 黒田 陽子, 中山 佳子, 竹口 雅樹, 小出 康夫.
    • Organizer
      第69回応用物理学会春季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] Challenge to development of III-nitride Nanolaminates/Diamond Heterojunction devices.2021

    • Author(s)
      小出 康夫, 井村 将隆, 劉 江偉, 廖 梅勇.
    • Organizer
      Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity. 2021
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Ⅲ族窒化物ナノラミネート特異構造を用いたダイヤモンド電子デバイスの開発.2021

    • Author(s)
      小出 康夫, 劉 江偉, 井村 将隆, 廖 梅勇.
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] Development of Atomic Layer Deposition Technique of AlxGa1-xN for Hydrogen-terminated diamond MIS-FETs.2021

    • Author(s)
      井村 将隆, 小出 康夫.
    • Organizer
      The 8th Asian Conference on Crystal Growth and Crystal Technology
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Three-dimensional Raman analysis of single crystal diamond cantilevers.2021

    • Author(s)
      シェン シウリン, 市川 公善, Zhaohui Huang, 小出 康夫, 井村 将隆, 小泉 聡, 廖 梅勇.
    • Organizer
      The 14th International Conference on New Diamond and Nano Carbons (NDNC2020/2021) conference
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] ダイヤモンド半導体のこれから2020

    • Author(s)
      井村 将隆
    • Organizer
      第1回ダイヤモンド・DLC関連若手研究会
    • Related Report
      2020 Research-status Report
    • Invited
  • [Presentation] 高放射線耐性半導体検出器の開発2020

    • Author(s)
      井村 将隆
    • Organizer
      茨城テックプランター2020
    • Related Report
      2020 Research-status Report
  • [Presentation] 真空紫外線及び70MeV陽子線に対して高い耐性を有すダイヤモンドSBD2020

    • Author(s)
      井村 将隆, 外川 学, 奥村 宏典, 西永 慈郎, 宮原 正也, 松木 武雄, 小出 康夫
    • Organizer
      第39回電子材料シンポジウム
    • Related Report
      2020 Research-status Report
  • [Presentation] Selective growth of diamond (111) by metal mask and its application for hydrogen terminated diamond FET2019

    • Author(s)
      M. Imura, H. Oosato, M. Y. Liao, and Y. Koide
    • Organizer
      13th Conference on New Diamond and Nano Carbons (NDNC2019)
    • Related Report
      2019 Research-status Report
    • Int'l Joint Research
  • [Presentation] InGaNの表面-バルク電子状態評価2019

    • Author(s)
      井村将隆, 津田俊輔, 長田貴弘, 山下良之, 吉川英樹, 小林啓介, 小出康夫, 太田優一, 村田秀信, 山口智広, 金子昌充, 荒木努, 名西やすし
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Research-status Report
  • [Presentation] 原子配列に対するInGaNの電子状態依存性評価2019

    • Author(s)
      井村将隆, 太田優一
    • Organizer
      第38回電子材料シンポジウム
    • Related Report
      2019 Research-status Report
  • [Presentation] Electronic structures of InGaN alloys2019

    • Author(s)
      M. Imura and Y. Ota
    • Organizer
      The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
    • Related Report
      2019 Research-status Report
    • Int'l Joint Research

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Published: 2019-04-18   Modified: 2023-01-30  

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