| Project/Area Number |
19K04529
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Review Section |
Basic Section 21060:Electron device and electronic equipment-related
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| Research Institution | Shizuoka University |
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Principal Investigator |
Moraru Daniel 静岡大学, 電子工学研究所, 准教授 (60549715)
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| Project Period (FY) |
2019-04-01 – 2022-03-31
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| Project Status |
Completed (Fiscal Year 2021)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2021: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2020: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2019: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | dopant atoms / silicon / nanodevices / tunneling / Esaki diode / semimetal / donor-acceptor pair / band-to-band tunneling / silicon-on-insulator / donor-acceptor state |
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| Outline of Research at the Start |
Silicon, key material in electronics, is known as a semiconductor. By doping with impurities, it becomes conductive. We propose that, at ultra-high doping with opposite-type impurities, silicon can behave as “semimetal” with impact on properties of tunneling devices, extending the functionalities.
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| Outline of Final Research Achievements |
The aim of this research was to demonstrate new properties of Si nano-devices due to high doping of donor-atoms and acceptor-atoms. In particular, band-to-band tunneling was investigated to reveal the possibility of current enhancement due to energy states of dopants. Based on these results, the "semimetal" behavior can also be clarified in high-concentration co-doped Si nanodevices.
In experiments, we fabricated and characterized silicon pn/pin diodes in different concentrations. We introduced rapid thermal annealing (RTA) equipment in the fabrication process for pn diodes to obtain more controlled doping profiles.
In simulations, we reported interplay of P-donors and B-acceptors in nanowire transistors and then focused on the impact of donor-acceptor pairs in Si nanowire diodes.
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| Academic Significance and Societal Importance of the Research Achievements |
本研究を通じて、シリコンナノデバイスのトンネル輸送制御における離散的なドーパントの役割が明らかになった。P-ドナーとB-アクセプターの相互作用は、ナノワイヤートランジスタのシミュレーションを行い、次にナノワイヤダイオードを拡張した。その結果、P-ドナーおよびB-アクセプターがトンネル輸送を媒介することが明らかになった。シリコンナノデバイスの電気伝導の実験から、ドーパント状態を介した量子トンネル伝導に関する観察結果が得られた。これらの結果は、原子スケールのエレクトロニクスを開発する上で重要である。この開発により、ナノスケールシリコンデバイスを用いた低電力エレクトロニクスが可能になると思われる。
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