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Development of an intense terahertz pulse source using semiconductor heterostructures

Research Project

Project/Area Number 19K04540
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Review Section Basic Section 21060:Electron device and electronic equipment-related
Research InstitutionOsaka Institute of Technology

Principal Investigator

Sasa Shigehiko  大阪工業大学, 工学部, 教授 (50278561)

Co-Investigator(Kenkyū-buntansha) 小山 政俊  大阪工業大学, 工学部, 准教授 (30758636)
Project Period (FY) 2019-04-01 – 2022-03-31
Project Status Completed (Fiscal Year 2021)
Budget Amount *help
¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2021: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2020: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2019: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Keywordsテラヘルツ放射 / GaSb/InAsヘテロ接合 / フォトデンバー効果 / パルス光源 / terahertz radiation / GaSb/InAs / photo-Dember effect / pulse laser source / pulse light source / GaSb/InAs ヘテロ構造 / Terahertz radiation / heterostructure / Photo-Dember effect
Outline of Research at the Start

ガンの診断や文化財の非破壊測定など、テラヘルツ時間領域分光法はさまざまな分野への応用が期待されている。その普及に欠かせないのは、現在の光源である光伝導スイッチに比べ、取り扱いの容易な光源の開発である。本研究は,半導体ヘテロ接合を利用して、このようなシステムに適用可能なテラヘルツパルス光源を開発し、テラヘルツ時間領域分光法の利用の普及に貢献することである。

Outline of Final Research Achievements

We conducted a study for the development of an intense terahertz pulse source utilizing InAs-based heterostructure. The optical source relies on photo-Dember effect since InAs possesses both high electron mobility and optical absorption coefficient. First, we systematically studied how the terahertz radiation intensity depends on the thicknesses of the GaSb in the GaSb/InAs heterostructures. We found that the radiation intensity increases as the GaSb thickness decreases. We observed an enhanced radiation for GaSb thickness of 5 nm.
In the GaSb/InAs heterostructures, the GaSb layer serves as the absorption layer and injects electrons into the InAs radiation layer. However, GaSb has a lower absorption coefficient than that of InAs. We therefore introduced the InGaSb absorption layer in order to increase the optical absorption. We confirmed that the InGaSb/InAs heterostructures for InSb content of 0.2 show stronger terahertz radiation than those for GaSb/InAs heterostructure.

Academic Significance and Societal Importance of the Research Achievements

テラヘルツ領域で動作する受発光素子の開発は、当該周波数領域の技術の開発、応用を見据え、非常に重要である。中でも、テラヘルツ時間領域分光法による文化財評価への応用は重要で、そのためには簡便に使用できるパルス光源の開発が重要である。本研究は、このテラヘルツパルス光源の開発に関わり、従来使用されている光伝導スイッチが、発光場所が微細な位置に限られ、精密な位置調整や電圧の印加が必要であったことに対し、電圧の印加が必要なく、試料表面全体が発光可能な素子となるため、扱いが容易であり、これからの本分光法の発展に重要である。

Report

(4 results)
  • 2021 Annual Research Report   Final Research Report ( PDF )
  • 2020 Research-status Report
  • 2019 Research-status Report
  • Research Products

    (7 results)

All 2022 2021 2020 2019

All Journal Article (2 results) (of which Peer Reviewed: 2 results) Presentation (5 results) (of which Int'l Joint Research: 4 results)

  • [Journal Article] Impact of optical absorption for THz radiation in GaSb/InAs heterostructures2021

    • Author(s)
      R. Ohashi; D. Shimada; M. Koyama; T. Maemoto; S. Sasa; F. Murakami; H. Murakami; M. Tonouchi
    • Journal Title

      IEEE Xplore

      Volume: - Pages: 1-2

    • DOI

      10.1109/irmmw-thz46771.2020.9371009

    • Related Report
      2020 Research-status Report
    • Peer Reviewed
  • [Journal Article] Development of terahertz optical sources for an excitation wavelength of 1.56 μm2021

    • Author(s)
      Daichi Shimada; Ryota Ohashi; Masatoshi Koyama; Toshihiko Maemoto; Shigehiko Sasa; Kosuke Okada; Hironaru Murakami; Masayoshi Tonouchi
    • Journal Title

      IEEE Xplore

      Volume: - Pages: 1-2

    • DOI

      10.1109/irmmw-thz46771.2020.9370373

    • Related Report
      2020 Research-status Report
    • Peer Reviewed
  • [Presentation] InGaSb/InAs ヘテロ接合を用いた高強度テラヘ ルツ放射素子の研究( II)2022

    • Author(s)
      高木 善之、長谷川 尊之、小山 政俊、前元 利彦、佐々 誠彦
    • Organizer
      応用物理学会
    • Related Report
      2021 Annual Research Report
  • [Presentation] Impact of optical absorption for THz radiation in GaSb/InAs heterostructures2020

    • Author(s)
      R. Ohashi; D. Shimada; M. Koyama; T. Maemoto; S. Sasa; F. Murakami; H. Murakami; M. Tonouchi
    • Organizer
      2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
    • Related Report
      2020 Research-status Report
    • Int'l Joint Research
  • [Presentation] Development of terahertz optical sources for an excitation wavelength of 1.56 μm2020

    • Author(s)
      Daichi Shimada; Ryota Ohashi; Masatoshi Koyama; Toshihiko Maemoto; Shigehiko Sasa; Kosuke Okada; Hironaru Murakami; Masayoshi Tonouchi
    • Organizer
      2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
    • Related Report
      2020 Research-status Report
    • Int'l Joint Research
  • [Presentation] Nonuniform Carrier Heating Induced Nonlinear Electron Transport Properties in Asymmetrically Necked InAs Mesa Structures2020

    • Author(s)
      Ryota Ohashi, Daichi Shimada, Masatoshi Koyama, Toshihiko Maemoto, and Shigehiko Sasa
    • Organizer
      238th Meeting of The Electrochemical Society
    • Related Report
      2020 Research-status Report
    • Int'l Joint Research
  • [Presentation] Terahertz Radiation Characteristics of GaSb/InAs Heterostructures2019

    • Author(s)
      S. Sasa, R. Ohashi, D. Shimada, M. Koyama, T. Maemoto, I. Kawayama, and M. Tonouchi
    • Organizer
      Int. Conf. on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures
    • Related Report
      2019 Research-status Report
    • Int'l Joint Research

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Published: 2019-04-18   Modified: 2023-01-30  

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