Research and development of new type photo-devices using compound semiconductors
| Project/Area Number |
19K15029
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| Research Category |
Grant-in-Aid for Early-Career Scientists
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| Allocation Type | Multi-year Fund |
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| Review Section |
Basic Section 21050:Electric and electronic materials-related
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| Research Institution | Tokyo University of Science |
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Principal Investigator |
カトリ イゾール 東京理科大学, 研究推進機構総合研究院, 助教 (50562740)
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| Project Period (FY) |
2019-04-01 – 2021-03-31
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| Project Status |
Discontinued (Fiscal Year 2020)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2021: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2020: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2019: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Keywords | Defect physics / Admittance Spectroscopy / JVT / CIGS solar cell / Stability / Compound semicondutor / Metastable behaviors / Alkali-metal / Photo-devices / Electron Irradiation / Proton Irradiation / High-efficiency |
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| Outline of Research at the Start |
Incorporation of heavier alkali-metals in the compound semiconductor materials is a promising method to improve device performance. However, the metastable behaviors of the device after alkali-metals incorporation for long-term application has not been well understood. Therefore, this work investigates the metastable behavior of alkali-metals incorporated semiconductor material and device (especially CIGS thin film and solar cells).
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| Outline of Annual Research Achievements |
Temperature-dependent current-voltage, admittance spectroscopy, capacitance-voltage measurements were performed on cesium fluoride (CsF)-treated CIGS solar cell before and after heat-light soaking (HLS) and subsequent heat-soaking (HS) treatments to analyse the defect and metastable properties of the device.
It was found that HLS treatment of CsF-treated CIGS solar cell formed cesium-induced defects for minority carrier recombination.
The admittance measurement showed a shift of the shallow energy position to a higher value after HLS and subsequent HS, which was due to the formation of a secondary diode toward the CIGS/molybdenum contact.
The low-temperature C-V measurement showed that HLS and subsequent HS treatment (HLS/HS) passivate IIICu anti-site defects.
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Report
(2 results)
Research Products
(12 results)
