急速溶融結晶化によるSn濃縮添加法を用いた直接遷移型IV族混晶創製と電子物性評価

• Project/Area Number: 19K15035
• Research Category: Grant-in-Aid for Early-Career Scientists
• Allocation Type: Multi-year Fund
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: 岡 博史 国立研究開発法人産業技術総合研究所, その他部局等, 研究員 (10828007)
• Project Period (FY): 2019-04-01 – 2022-03-31
• Project Status: Adopted(Fiscal Year 2019)
• Budget Amount: ¥4,290,000 (Direct Cost : ¥3,300,000、Indirect Cost : ¥990,000); Fiscal Year 2021 : ¥1,040,000 (Direct Cost : ¥800,000、Indirect Cost : ¥240,000); Fiscal Year 2020 : ¥1,560,000 (Direct Cost : ¥1,200,000、Indirect Cost : ¥360,000); Fiscal Year 2019 : ¥1,690,000 (Direct Cost : ¥1,300,000、Indirect Cost : ¥390,000)