| Project/Area Number |
19K15052
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| Research Category |
Grant-in-Aid for Early-Career Scientists
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| Allocation Type | Multi-year Fund |
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| Review Section |
Basic Section 21060:Electron device and electronic equipment-related
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| Research Institution | Institute of Physical and Chemical Research |
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Principal Investigator |
WANG LI 国立研究開発法人理化学研究所, 光量子工学研究センター, 研究員 (50804035)
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| Project Period (FY) |
2019-04-01 – 2021-03-31
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| Project Status |
Completed (Fiscal Year 2020)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2020: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2019: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | THz-QCL / THz / QCL / 1.8THz / laser / quantumn well / GaAs/AlGaAs / terahertz |
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| Outline of Research at the Start |
A new design of active region by using indirect injection scheme is proposed to lift up the operating temperature of low-frequency THz-QCLs in real applications.
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| Outline of Final Research Achievements |
1.Full theory quantum transport based on non-equilibrium Green’s function is packaged as a simulation platform, to predict the quantum transport in terahertz quantum cascade laser. 2.Improved technique in GaAs/Al0.2Ga0.8As quantum well with 1200 stacked layers is shown .By employing an latest Cu-Cu metals waveguide processing, the lasing of 1.8THz at 185K is achieved.
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| Academic Significance and Societal Importance of the Research Achievements |
Terahertz wave has many new applications in chemical and medical. This study is to develop a terahertz wave source based on quantum cascade laser using GaAs semiconductor quantum wells.
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