Fabrication and understanding the interface junction between atomic layers and 3D solids

• Project/Area Number: 19K15393
• Research Category: Grant-in-Aid for Early-Career Scientists
• Allocation Type: Multi-year Fund
• Review Section: Basic Section 28030:Nanomaterials-related
• Research Institution: Tokyo Metropolitan University
• Principal Investigator: LIM HONGEN 東京都立大学, 理学研究科, 特任助教 (20794861)
• Project Period (FY): 2019-04-01 – 2021-03-31
• Project Status: Completed (Fiscal Year 2020)
• Budget Amount: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000); Fiscal Year 2020: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000); Fiscal Year 2019: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
• Keywords: 化学気相成長法 / ファンデルワールス物質 / 遷移金属ダイカルコゲナイド / 遷移金属カルコゲナイド / １次元 / ナノワイヤー / 多量生成 / 配向制御合成 / 原子層物質 / 二次元材料 / 遷移金属ダイカルコゲナイト / 界面成長 / 界面構造

Outline of Research at the Start

本研究では、2次元物質（原子層物質）と3次元物質における「１次元の接合界面」の作製とその界面構造の解明に取り組む。従来の２－３次元物質の接合界面は，３次元物質の表面と２次元物質の表面の間の「２次元界面」であるが、本研究のように金属の端から水平方向に原子層を合成した「１次元界面」は前例がない。本研究では、金属の種類や結晶面によって接合界面の構造や成長する原子層の結晶方位、そして１次元界面の電子輸送特性がどのように変化するか解明する。

Outline of Final Research Achievements

Studying the interface junction between van der Waals materials and bulk solids provides an important key towards possible control of their crystallographic structure, growth orientation and location. In this work, such junctions were fabricated using chemical vapor deposition. Based on the results obtained, we succeeded in (1) the growth of transition metal dichalcogenide atomic layers at the interface between dissimilar solids, and (2) the wafer-scale growth of transition metal chalcogenide atomic wires for the first time.

Academic Significance and Societal Importance of the Research Achievements

基板の表面ではなく、異なる固体の界面を原子層物質の成長に利用する研究はこれまでなく、新たな原子層の合成やデバイス作製プロセスを可能にするインパクトの大きい研究になる。特に金属と基板の界面において原子層の直接合成が出来れば、電子デバイスへの応用に主要の問題となる接触界面が大幅に改善する可能性がある。原子細線に関しては、多量生成に成功したことで新たな量子現象や機能を持つ新奇材料の探索にも期待できる。新規ナノ材料成長技術のみではなく、物性の探索やデバイス応用まで幅広い研究分野へ影響する波及効果が期待できる。

Research Products

• [Journal Article] Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two‐Dimensional Electronics (2021)
  • Author(s): Li Shisheng、Hong Jinhua、Gao Bo、Lin Yung‐Chang、Lim Hong En、Lu Xueyi、Wu Jing、Liu Song、Tateyama Yoshitaka、Sakuma Yoshiki、Tsukagoshi Kazuhito、Suenaga Kazu、Taniguchi Takaaki
  • Journal Title: Advanced Science Volume: 0 Issue: 11 Pages: 2004438-2004438
  • DOI: 10.1002/advs.202004438
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Air-stable and efficient electron doping of monolayer MoS2 by salt-crown ether treatment (2021)
  • Author(s): Ogura Hiroto、Kaneda Masahiko、Nakanishi Yusuke、Nonoguchi Yoshiyuki、Pu Jiang、Ohfuchi Mari、Irisawa Toshifumi、Lim Hong En、Endo Takahiko、Yanagi Kazuhiro、Takenobu Taishi、Miyata Yasumitsu
  • Journal Title: Nanoscale Volume: 13 Issue: 19 Pages: 8784-8789
  • DOI: 10.1039/d1nr01279g
  • Peer Reviewed / Open Access
• [Journal Article] Wafer-Scale Growth of One-Dimensional Transition-Metal Telluride Nanowires (2020)
  • Author(s): Lim Hong En、Nakanishi Yusuke、Liu Zheng、Pu Jiang、Maruyama Mina、Endo Takahiko、Ando Chisato、Shimizu Hiroshi、Yanagi Kazuhiro、Okada Susumu、Takenobu Taishi、Miyata Yasumitsu
  • Journal Title: Nano Letters Volume: 21 Issue: 1 Pages: 243-249
  • DOI: 10.1021/acs.nanolett.0c03456
  • Peer Reviewed / Open Access
• [Journal Article] Monolayer MoS2 growth at the Au-SiO2 interface (2019)
  • Author(s): Lim Hong En、Irisawa Toshifumi、Okada Naoya、Okada Mitsuhiro、Endo Takahiko、Nakanishi Yusuke、Maniwa Yutaka、Miyata Yasumitsu
  • Journal Title: Nanoscale Volume: 11 Issue: 42 Pages: 19700-19704
  • DOI: 10.1039/c9nr05119h
  • Peer Reviewed / Int'l Joint Research
• [Presentation] Wafer-scale synthesis of 1D transition metal chalcogenide nanowires (2020)
  • Author(s): Hong En Lim, Yusuke Nakanishi, Zheng Liu, Jiang Pu, Takahiko Endo, Chisato Ando, Hiroshi Shimizu, Kazuhiro Yanagi, Taishi Takenobu, Yasumitsu Miyata
  • Organizer: 第59回フラーレン・ナノチューブ・グラフェン総合シンポジウム
• [Presentation] Controlled, Wafer-Scale Growth of Transition Metal Chalcogenide Nanowires (2020)
  • Author(s): Hong En Lim, Yusuke Nakanishi, Zheng Liu, Jiang Pu, Takahiko Endo, Chisato Ando, Hiroshi Shimizu, Kazuhiro Yanagi, Taishi Takenobu and Yasumitsu Miyata
  • Organizer: 33rd International Microprocesses and Nanotechnology Conference
  • Int'l Joint Research
• [Presentation] Monolayer MoS2 Growth at Metal-Insulator Interface (2019)
  • Author(s): Hong En Lim, Toshifumi Irisawa, Naoya Okada, Takahiko Endo, Yusuke Nakanishi, Yutaka Maniwa and Yasumitsu Miyata
  • Organizer: Recent Progress in Graphene & 2D Materials Research
  • Int'l Joint Research
• [Presentation] Interface Growth of Molybdenum Disulfide (2019)
  • Author(s): Hong En Lim, Toshifumi Irisawa, Naoya Okada, Takahiko Endo, Yusuke Nakanishi, Yutaka Maniwa and Yasumitsu Miyata
  • Organizer: Graphene Week 2019
  • Int'l Joint Research
• [Presentation] Interface Growth of Monolayer MoS2 (2019)
  • Author(s): Hong En Lim, Toshifumi Irisawa, Naoya Okada, Takahiko Endo, Yusuke Nakanishi, Yutaka Maniwa and Yasumitsu Miyata
  • Organizer: 7th International Conference for Young Scientists
  • Int'l Joint Research
• [Presentation] Gold-Mediated Growth of Few-layer Molybdenum Disulfide (2019)
  • Author(s): Hong En Lim, Toshifumi Irisawa, Naoya Okada, Takahiko Endo, Yutaka Maniwa and Yasumitsu Miyata
  • Organizer: 56th Fullerenes-Nanotubes-Graphene General Symposium
  • Int'l Joint Research
• [Remarks] Transition metal nanowires scale up
  • URL: https://www.nature.com/articles/s41928-021-00540-w
• [Remarks] Atomic-scale nanowire can now be produced at scale
  • URL: https://www.eurekalert.org/pub_releases/2020-12/tmu-anc121820.php
• [Remarks] 究極的に細い原子細線からなる大面積薄膜を実現 ～次世代の電子・エネルギーデバイス応用に期待～
  • URL: https://www.tmu.ac.jp/news/topics/30557.html
• [Remarks] 究極的に細い原子細線からなる大面積薄膜を実現 ～次世代の電子・エネルギーデバイス応用に期待～
  • URL: https://www.aist.go.jp/aist_j/press_release/pr2020/pr20201214_2/pr20201214_2.html
• [Remarks] 究極的に細い原子細線からなる大面積薄膜を実現 ～次世代の電子・エネルギーデバイス応用に期待～
  • URL: https://www.nagoya-u.ac.jp/about-nu/public-relations/researchinfo/upload_images/20201214_engg1.pdf
• [Remarks] 東京都立大学ナノ物性研究室ニュース
  • URL: http://www.comp.tmu.ac.jp/nanotube/index.html
• [Patent(Industrial Property Rights)] 導電膜、導電部材及び導電膜の製造方法 (2020)
  • Inventor(s): 宮田耕充、中西勇介、リムホンエン、遠藤尚彦、安藤千里、清水宏
  • Industrial Property Rights Holder: 宮田耕充、中西勇介、リムホンエン、遠藤尚彦、安藤千里、清水宏
  • Industrial Property Rights Type: 特許
  • Filing Date: 2020