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Demonstration of piezoelectric properties of novel 2D materials toward energy harvesting

Research Project

Project/Area Number 19K21956
Research Category

Grant-in-Aid for Challenging Research (Exploratory)

Allocation TypeMulti-year Fund
Review Section Medium-sized Section 21:Electrical and electronic engineering and related fields
Research InstitutionThe University of Tokyo

Principal Investigator

Nagashio Kosuke  東京大学, 大学院工学系研究科(工学部), 教授 (20373441)

Project Period (FY) 2019-06-28 – 2021-03-31
Project Status Completed (Fiscal Year 2020)
Budget Amount *help
¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Fiscal Year 2020: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2019: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Keywords環境発電 / 圧電・強誘電 / SnS / 2次元強誘電体 / 強誘電特性 / 圧電 / 2次元材料
Outline of Research at the Start

IoTデバイス数は,数年後には200~400億個といった数に達すると指摘されている.本研究は,普遍的に存在する「振動」という環境エネルギーから電気エネルギーを獲得し,IoTデバイスに独立した形で電力供給を可能とする材料開発を提案するものであり,CO2削減に資する技術である.高いフレキシビリティを持つために最も高い圧電定数(d*g)が報告されている2次元層状SnSにおいて,未だ実証されていない圧電特性を実証し,環境発電につなげる研究を行う.

Outline of Final Research Achievements

In this study, we focused on piezoelectric SnS,which is one of two-dimensional materials with broken central symmetry. By controlling the supply of raw materials during growth and the desorption of SnS from the crystal surface, we succeeded to grow monolayer SnS with a thickness of 0.8 nm on a mica substrate. Moreover, we constructed a machine to introduce strain and verified the piezoresistive effect from the strain response in the electrical characteristics of SnS. A decrease and an increase in resistance were observed with respect to compression and tension, respectively. The piezoresistive effect was clarly observed.

Academic Significance and Societal Importance of the Research Achievements

今回,新規圧電・強誘電材料である単層SnSのPVD成長及びその圧抵抗効果の計測等を行った.これまで物性に関する理論予測しかなく単層成長は報告されていなかった状況において,圧電・強誘電特性を評価できた点は,学術的に意義が高い.社会実装まで大きな隔たりがあるものの,既存の圧電材料では困難であった環境発電によるIoTデバイス動作を達成できる可能性がある本提案は,実現すれば社会へのインパクトは非常に大きい.

Report

(3 results)
  • 2020 Annual Research Report   Final Research Report ( PDF )
  • 2019 Research-status Report
  • Research Products

    (36 results)

All 2020 2019 2018 Other

All Int'l Joint Research (2 results) Journal Article (16 results) (of which Int'l Joint Research: 4 results,  Peer Reviewed: 16 results,  Open Access: 3 results) Presentation (11 results) (of which Int'l Joint Research: 7 results,  Invited: 11 results) Book (5 results) Remarks (2 results)

  • [Int'l Joint Research] National Chiao Tung University(台湾)

    • Related Report
      2020 Annual Research Report
  • [Int'l Joint Research] National Chiao Tung University(その他の国・地域)

    • Related Report
      2019 Research-status Report
  • [Journal Article] Quantum-mechanical effect in atomically thin MoS 2 FET2020

    • Author(s)
      Fang Nan、Nagashio Kosuke
    • Journal Title

      2D Materials

      Volume: 7 Issue: 1 Pages: 014001-014001

    • DOI

      10.1088/2053-1583/ab42c0

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Influence of Interlayer Stacking on Gate-Induced Carrier Accumulation in Bilayer MoS22020

    • Author(s)
      Maruyama Mina、Nagashio Kosuke、Okada Susumu
    • Journal Title

      ACS Applied Electronic Materials

      Volume: 2 Issue: 5 Pages: 1352-1357

    • DOI

      10.1021/acsaelm.0c00139

    • NAID

      120007127633

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Purely in-plane ferroelectricity in monolayer SnS at room temperature2020

    • Author(s)
      Higashitarumizu Naoki、Kawamoto Hayami、Lee Chien-Ju、Lin Bo-Han、Chu Fu-Hsien、Yonemori Itsuki、Nishimura Tomonori、Wakabayashi Katsunori、Chang Wen-Hao、Nagashio Kosuke
    • Journal Title

      Nature Communications

      Volume: 11 Issue: 1 Pages: 1-5

    • DOI

      10.1038/s41467-020-16291-9

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Isothermal Growth and Stacking Evolution in Highly Uniform Bernal-Stacked Bilayer Graphene2020

    • Author(s)
      Solis-Fernandez Pablo、Terao Yuri、Kawahara Kenji、Nishiyama Wataru、Uwanno Teerayut、Lin Yung-Chang、Yamamoto Keisuke、Nakashima Hiroshi、Nagashio Kosuke、Hibino Hiroki、Suenaga Kazu、Ago Hiroki
    • Journal Title

      ACS Nano

      Volume: 14 Issue: 6 Pages: 6834-6844

    • DOI

      10.1021/acsnano.0c00645

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Hexagonal Boron Nitride As an Ideal Substrate for Carbon Nanotube Photonics2020

    • Author(s)
      N. Fang, K. Otsuka, A. Ishii, T. Taniguchi, K. Watanabe, K. Nagashio, and Y. K. Kato
    • Journal Title

      ACS Photonics

      Volume: 7 Issue: 7 Pages: 1773-1779

    • DOI

      10.1021/acsphotonics.0c00406

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Understanding interface properties in 2D heterostructure FETs2020

    • Author(s)
      Nagashio Kosuke
    • Journal Title

      Semiconductor Science and Technology

      Volume: 35 Issue: 10 Pages: 103003-103003

    • DOI

      10.1088/1361-6641/aba287

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage2020

    • Author(s)
      Sasaki Taro、Ueno Keiji、Taniguchi Takashi、Watanabe Kenji、Nishimura Tomonori、Nagashio Kosuke
    • Journal Title

      Small

      Volume: 16 Issue: 47 Pages: 2004907-2004907

    • DOI

      10.1002/smll.202004907

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality2020

    • Author(s)
      Nakamura Keigo、Nagamura Naoka、Ueno Keiji、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
    • Journal Title

      ACS Applied Materials & Interfaces

      Volume: 12 Issue: 46 Pages: 51598-51606

    • DOI

      10.1021/acsami.0c13233

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Carrier Distribution Control in van der Waals Heterostructures of MoS2 and WS2 by Field-Induced Band-Edge Engineering2020

    • Author(s)
      Maruyama Mina、Nagashio Kosuke、Okada Susumu
    • Journal Title

      Physical Review Applied

      Volume: 14 Issue: 4 Pages: 044028-044028

    • DOI

      10.1103/physrevapplied.14.044028

    • NAID

      120007132502

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Micrometer-scale monolayer SnS growth by physical vapor deposition2020

    • Author(s)
      Kawamoto H.、Higashitarumizu N.、Nagamura N.、Nakamura M.、Shimamura K.、Ohashi N.、Nagashio K.
    • Journal Title

      Nanoscale

      Volume: 12 Issue: 45 Pages: 23274-23281

    • DOI

      10.1039/d0nr06022d

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices2019

    • Author(s)
      Li Weisheng、Zhou Jian、Cai Songhua、Yu Zhihao、Zhang Jialin、Fang Nan、Li Taotao、Wu Yun、Chen Tangsheng、Xie Xiaoyu、Ma Haibo、Yan Ke、Dai Ningxuan、Wu Xiangjin、Zhao Huijuan、Wang Zixuan、He Daowei、Pan Lijia、Shi Yi、Wang Peng、Chen Wei、Nagashio Kosuke、Duan Xiangfeng、Wang Xinran
    • Journal Title

      Nature Electronics

      Volume: 2 Issue: 12 Pages: 563-571

    • DOI

      10.1038/s41928-019-0334-y

    • Related Report
      2019 Research-status Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Full Energy Spectra of Interface State Densities for n ‐ and p ‐type MoS 2 Field‐Effect Transistors2019

    • Author(s)
      Fang Nan、Toyoda Satoshi、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
    • Journal Title

      Advanced Functional Materials

      Volume: 29 Issue: 49 Pages: 1904465-1904465

    • DOI

      10.1002/adfm.201904465

    • Related Report
      2019 Research-status Report
    • Peer Reviewed
  • [Journal Article] Influence of interface dipole layers on the performance of graphene field effect transistors2019

    • Author(s)
      Nagamura Naoka、Fukidome Hirokazu、Nagashio Kosuke、Horiba Koji、Ide Takayuki、Funakubo Kazutoshi、Tashima Keiichiro、Toriumi Akira、Suemitsu Maki、Horn Karsten、Oshima Masaharu
    • Journal Title

      Carbon

      Volume: 152 Pages: 680-687

    • DOI

      10.1016/j.carbon.2019.06.038

    • Related Report
      2019 Research-status Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Detection of both optical polarization and coherence transfers to excitonic valley states in CVD-grown monolayer MoS22019

    • Author(s)
      Asakura Eito、Suzuki Masaki、Karube Shutaro、Nitta Junsaku、Nagashio Kosuke、Kohda Makoto
    • Journal Title

      Applied Physics Express

      Volume: 12 Issue: 6 Pages: 063005-063005

    • DOI

      10.7567/1882-0786/ab21a8

    • NAID

      210000156025

    • Related Report
      2019 Research-status Report
    • Peer Reviewed / Open Access
  • [Journal Article] Pinpoint pick-up and bubble-free assembly of 2D materials using PDMS/PMMA polymers with lens shapes2019

    • Author(s)
      Toyoda Satoshi、Uwanno Teerayut、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
    • Journal Title

      Applied Physics Express

      Volume: 12 Issue: 5 Pages: 055008-055008

    • DOI

      10.7567/1882-0786/ab176b

    • NAID

      210000155715

    • Related Report
      2019 Research-status Report
    • Peer Reviewed
  • [Journal Article] Expansion of the Graphdiyne Family: A Triphenylene-Cored Analogue2018

    • Author(s)
      Matsuoka Ryota、Toyoda Ryojun、Shiotsuki Ryo、Fukui Naoya、Wada Keisuke、Maeda Hiroaki、Sakamoto Ryota、Sasaki Sono、Masunaga Hiroyasu、Nagashio Kosuke、Nishihara Hiroshi
    • Journal Title

      ACS Applied Materials & Interfaces

      Volume: 10 Issue: 3 Pages: 2730-2733

    • DOI

      10.1021/acsami.8b00743

    • Related Report
      2019 Research-status Report
    • Peer Reviewed
  • [Presentation] "Interface engineering for 2D laVirtual MRS Syered semiconductors",2020

    • Author(s)
      K. Nagashio,
    • Organizer
      2020 pring/Fall meeting, (Nov./Dec. 2020, online, USA).
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] "In-plane ferroelectricity in monolayer SnS",2020

    • Author(s)
      K. Nagshio,
    • Organizer
      6th international Workshop on 2D Materials 2020, supported by A3 Foresight Program, (Sep. 24-25, 2030, Online).
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] ”2次元電子デバイス”,2020

    • Author(s)
      長汐晃輔,
    • Organizer
      応用物理学会東海支部55周年記念講演,東海ニューフロンティアリサーチワークショップ,(2020年12月-1月,online on-demand).
    • Related Report
      2020 Annual Research Report
    • Invited
  • [Presentation] "2次元材料の電子デバイス応用",2020

    • Author(s)
      長汐晃輔,
    • Organizer
      FNTG学会リレーウェビナー, (2020年6月30日, zoom webinar).
    • Related Report
      2020 Annual Research Report
    • Invited
  • [Presentation] "Understanding interface properties in 2D heterostructure FETs"2019

    • Author(s)
      K. Nagashio,
    • Organizer
      2019 Int. Workshop on Dielectric thin films for future electron devices -science and technology -, (Nov. 19, 2019, Tokyo Tech. Tokyo, Japan).
    • Related Report
      2019 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] "Full energy spectra of interface states density for n and p-type MoS2 field effect transistors",2019

    • Author(s)
      K. Nagashio,
    • Organizer
      Recent Progress in Graphene Research(RPGR), (October10, 2019, Kunibiki Messe, Matsue, Shimane, Japan).
    • Related Report
      2019 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] "2D heterostructure FETs",2019

    • Author(s)
      K. Nagashio,
    • Organizer
      PKU-UTokyo Nanocarbon summer camp, (Aug. 2, 2019, UTokyo, Tokyo).
    • Related Report
      2019 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] "2D layered semiconductors",2019

    • Author(s)
      K. Nagashio,
    • Organizer
      7th International symposium on organic and inorganic electronic materials and related nanotechnology, (June 19-22, 2019, Shinshu Univ. Nagano, Japan)
    • Related Report
      2019 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] "How to understand interface properties in 2D heterostructure FETs",2019

    • Author(s)
      K. Nagashio,
    • Organizer
      2019 Symposia on VLSI Technology and Circuits, (June 19-14, 2019, RIHGA Royal Hotel, Kyoto, Japan)
    • Related Report
      2019 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] "2次元層状トランジスタの界面の理解と制御",2019

    • Author(s)
      長汐 晃輔,
    • Organizer
      2019年電子情報通信学会シリコン材料・デバイス研究会 ,(2019年10月7日, 機械振興会館 (東京)).
    • Related Report
      2019 Research-status Report
    • Invited
  • [Presentation] "2次元層状SnSの圧電・強誘電特性",2019

    • Author(s)
      長汐 晃輔,
    • Organizer
      第23回VBLシンポジウム ,(2019年10月6日, 名古屋大学 (愛知)).
    • Related Report
      2019 Research-status Report
    • Invited
  • [Book] "完全二次元層状ヘテロ2層グラフェントランジスタ", グラフェンから広がる二次元物質の新技術と応用,2020

    • Author(s)
      長汐晃輔,
    • Total Pages
      9
    • Publisher
      エヌ・ティー・エス, 東京, 2020, pp. 33-41
    • Related Report
      2020 Annual Research Report
  • [Book] "MoS2 FETにおけるゲート容量の理解", グラフェンから広がる二次元物質の新技術と応用,2020

    • Author(s)
      長汐晃輔,
    • Total Pages
      9
    • Publisher
      エヌ・ティー・エス, 東京, 2020, pp. 183-191.
    • Related Report
      2020 Annual Research Report
  • [Book] "2次元層状トンネルFET", ポストグラフェン材料の創製と用途開発最前線,2020

    • Author(s)
      長汐晃輔,
    • Total Pages
      10
    • Publisher
      エヌ・ティー・エス, 東京,2020, pp. 251-260.
    • Related Report
      2020 Annual Research Report
  • [Book] "2次元層状ヘテロFETにおける界面特性制御",2020

    • Author(s)
      長汐晃輔,
    • Total Pages
      8
    • Publisher
      応用物理, 2020, 89, 139-146.
    • Related Report
      2020 Annual Research Report
  • [Book] ”hBNの絶縁性破壊強さの異方性とその起源”2019

    • Author(s)
      服部吉晃,長汐晃輔,
    • Total Pages
      5
    • Publisher
      NEW DIAMOND,2019, 35
    • Related Report
      2019 Research-status Report
  • [Remarks] 東大マテリアル・長汐研

    • URL

      http://webpark1753.sakura.ne.jp/nagashio_lab/

    • Related Report
      2020 Annual Research Report
  • [Remarks] 東大マテリアル・長汐研究室

    • URL

      http://webpark1753.sakura.ne.jp/nagashio_lab/

    • Related Report
      2019 Research-status Report

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Published: 2019-07-04   Modified: 2022-01-27  

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