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ナノスケールSiO2/Si界面の局所誘電特性に及ぼす欠陥の影響

Research Project

Project/Area Number 20035005
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Research InstitutionThe University of Electro-Communications

Principal Investigator

名取 晃子  The University of Electro-Communications, 電気通信学部, 教授 (50143368)

Co-Investigator(Kenkyū-buntansha) 中村 淳  電気通信大学, 電気通信学部, 准教授 (50277836)
Project Period (FY) 2008 – 2009
Project Status Completed (Fiscal Year 2009)
Budget Amount *help
¥3,900,000 (Direct Cost: ¥3,900,000)
Fiscal Year 2009: ¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 2008: ¥2,400,000 (Direct Cost: ¥2,400,000)
Keywords局所誘電特性 / 表面・界面 / 欠陥 / 計算物理学 / high-k膜 / GeO2
Research Abstract

電界印加下の密度汎関数基底状態計算(B. Meyer et al., Phys. Rev. B 63(2001)205426)を用いて電界誘起電荷密度を求め、ガウス分布フィルターを用いて粗視化を行う。粗視化された電界誘起電荷観密度を用いてガウス則より粗視化された局所内部電界を評価し、電束密度連続の式より局所誘電率の3次元空間分布を求める定式化とプログラム開発を行った。
SiO2超薄膜と理想的なSiO2/Si(001)界面に酸素欠損を導入し、電子分極による光学誘電率、電子分極と格子分極による静的誘電率の3次元空間分布を調べた。欠陥近傍での光学誘電率の空間変化は小さいが、静的誘電率は欠陥近傍で増大することを見出した。
さらに、HfO2、La2O3等のイオン性の強いhigh-k超薄膜の誘電特性、Ge-MOSの酸化膜として期待されるGeO2超薄膜、GeO2/Ge(001)界面の局所誘電特性の計算を行った。GeO2酸化膜では、結晶構造の異なるquartz構造とrutile構造の2種類の薄膜を調べた。quartz構造薄膜は共有結合性が強く、quartz構造SiO2膜と類似の誘電特性を示す。イオン結合性の強いrutile構造薄膜はquartz構造より大きな静的誘電率を持ち、酸素欠損近傍での静的誘電率はさらに増大することを示した。
HfO2超薄膜の誘電特性の計算は論文にまとめ、J. Vac. Sci. Technol. Bに掲載された。GeO2超薄膜、GeO2/Ge(001)界面の局所誘電特性の研究成果は、"37^<th> Conf. on the Physics and Chemistry of Surfaces and Interfaces"で発表され、現在、論文を執筆中である。

Report

(2 results)
  • 2009 Annual Research Report
  • 2008 Annual Research Report
  • Research Products

    (21 results)

All 2009 2008

All Journal Article (5 results) (of which Peer Reviewed: 5 results) Presentation (16 results)

  • [Journal Article] In-plane strain effect on dielectric properties of the HfO2 thin films2009

    • Author(s)
      S.Wakui, J.Nakamura, A.Natori
    • Journal Title

      J.Vac Sci.Technol.B 27

      Pages: 2020-2023

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Band bending effects on scanning tunneling microscope images of subsurface dopants2009

    • Author(s)
      M.Hirayama, J.Nakamura, A.Natori
    • Journal Title

      J.Appl.Phys. 105

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Anisotropic half-metallic ground state of Mn atomic wire on GaAs(110)2009

    • Author(s)
      M.Hirayama, J.Nakamura, A.Natori
    • Journal Title

      J.Vac.Sci.Technol.B 27

      Pages: 2062-2065

    • NAID

      10025620814

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Ballistic thermal conductance of electrons in graphene ribbons2009

    • Author(s)
      E.Watanabe, S.Yamaguchi, J.Nakamura, A.Natori
    • Journal Title

      Phys.Rev.B 80

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Atomic scale dielectric constant near the SiO2/Si(001)interface2008

    • Author(s)
      S. Wakui, J. Nakamura, A. Natori
    • Journal Title

      J. Vac. Sci. Technol. B 26

      Pages: 1579-1584

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Presentation] Ge酸化物超薄膜の誘電特性2009

    • Author(s)
      田村雅大、涌井貞一、中村淳、名取晃子
    • Organizer
      第29回表面科学学術講演会
    • Place of Presentation
      タワーホール船堀
    • Year and Date
      2009-10-27
    • Related Report
      2009 Annual Research Report
  • [Presentation] HfO2超薄膜の誘電特性:結晶構造依存性2009

    • Author(s)
      涌井貞一、中村淳、名取晃子
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-09
    • Related Report
      2009 Annual Research Report
  • [Presentation] 第一原理計算によるSi(001)/La2O3(01-10)界面のバンドオフセット2009

    • Author(s)
      谷内亮介、中村淳、名取晃子
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-09
    • Related Report
      2009 Annual Research Report
  • [Presentation] Nano-scale profile of the dielectric constant near surfaces and interfaces2009

    • Author(s)
      中村淳
    • Organizer
      2^<nd> Int.Workshop on epitaxial growth and fundamental properties of semiconductor nanostructures
    • Place of Presentation
      阿南
    • Year and Date
      2009-08-11
    • Related Report
      2009 Annual Research Report
  • [Presentation] Dielectric constant profiles of the thin-films : Alpha- and Beta-quartz phase of(Si or Ge)dioxide2009

    • Author(s)
      中村淳, 涌井貞一, 田村雅大, 名取晃子
    • Organizer
      12^<th> Conf.on the Formation of Semiconductor Interfaces
    • Place of Presentation
      Weimer、ドイツ
    • Year and Date
      2009-07-07
    • Related Report
      2009 Annual Research Report
  • [Presentation] 歪みHfO2薄膜の誘電特性2009

    • Author(s)
      涌井貞一、中村淳、名取晃子
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-04-01
    • Related Report
      2009 Annual Research Report
  • [Presentation] In-plane strain effects on dielectric properties of the HfO2 thin film2009

    • Author(s)
      S. Wakui, J. Nakamura, A. Natori
    • Organizer
      36th Conference on the Physics and Chemistry of Surfaces and Interfaces(PCSI-36)
    • Place of Presentation
      Santa Barbara, CA, 米国
    • Year and Date
      2009-01-12
    • Related Report
      2008 Annual Research Report
  • [Presentation] SiC結晶多形の誘電率 ; 第一原理計算による積層構造依存性評価2008

    • Author(s)
      佐藤耕平, 岩崎雄一, 中村淳, 名取晃子
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大
    • Year and Date
      2008-11-15
    • Related Report
      2008 Annual Research Report
  • [Presentation] HfO2超薄膜の誘電特性2008

    • Author(s)
      涌井貞一, 中村淳, 名取晃子
    • Organizer
      第28回表面科学学術講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2008-11-15
    • Related Report
      2008 Annual Research Report
  • [Presentation] La2O3(0001)超薄膜の誘電特性2008

    • Author(s)
      谷内良亮, 中村淳, 名取晃子
    • Organizer
      第28回表面科学学術講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2008-11-15
    • Related Report
      2008 Annual Research Report
  • [Presentation] First- principles evaluation of the polytype-dependence of the local dielectric constant for SiC2008

    • Author(s)
      K. Sato, Y. Iwasaki, S. Wakui, J. Nakamura, A. Natori
    • Organizer
      ISSS-5
    • Place of Presentation
      早稲田大学
    • Year and Date
      2008-11-12
    • Related Report
      2008 Annual Research Report
  • [Presentation] Dielectric properties of the ultra-thin La2O3(0001) film2008

    • Author(s)
      Y. Ryosuke, J. Nakamura, A. Natori
    • Organizer
      5th International Symposium on Surface Science and Nanotechnology(ISSS-5)
    • Place of Presentation
      早稲田大学
    • Year and Date
      2008-11-11
    • Related Report
      2008 Annual Research Report
  • [Presentation] HfO2超薄膜の局所誘電率プロファイル2008

    • Author(s)
      涌井貞一, 中村淳, 名取晃子
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大
    • Year and Date
      2008-09-02
    • Related Report
      2008 Annual Research Report
  • [Presentation] La2O3(0001)超薄膜の誘電特性2008

    • Author(s)
      谷内良亮, 中村淳, 名取晃子
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大
    • Year and Date
      2008-09-02
    • Related Report
      2008 Annual Research Report
  • [Presentation] Polytype dependence on permittivity of SiC2008

    • Author(s)
      J. Nakamura, Y. Iwasaki, S. Wakui, A. Natori
    • Organizer
      ICSFS-14
    • Place of Presentation
      ダブリン,アイルランド
    • Year and Date
      2008-07-03
    • Related Report
      2008 Annual Research Report
  • [Presentation] Anomalous enhancement of the local dielectric constant near defects in SiO22008

    • Author(s)
      S. Wakui, J. Nakamura, A. Natori
    • Organizer
      14th International Conference on Solid Films and Surface(ICSFS-14)
    • Place of Presentation
      ダブリン,アイルランド
    • Year and Date
      2008-07-01
    • Related Report
      2008 Annual Research Report

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Published: 2008-04-01   Modified: 2018-03-28  

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