LSIプロセスによりシリコン結晶に導入された結晶歪の精密分布測定に関する研究

• Project/Area Number: 20035012
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: Meiji University
• Principal Investigator: 小椋 厚志 Meiji University, 理工学部, 教授 (00386418)
• Project Period (FY): 2008 – 2009
• Project Status: Completed (Fiscal Year 2009)
• Budget Amount: ¥5,200,000 (Direct Cost: ¥5,200,000); Fiscal Year 2009: ¥2,600,000 (Direct Cost: ¥2,600,000); Fiscal Year 2008: ¥2,600,000 (Direct Cost: ¥2,600,000)
• Keywords: 半導体物性 / マイコロナノデバイス / 物性実験

Research Abstract

Si LSIデバイスにおいて意図的な歪導入技術(歪Si技術)は効果的に用いられMOSFETの性能向上に貢献している。本研究では、歪の精密分布測定を行うことでデバイス特性向上のための歪Si技術の成熟に貢献することを目的としている。
前年度に引き続きラマン分光測定装置のさらなる高空間分解能化に取り組み、2つの手法で進捗を得た。その一つはピーク分離法である。前年までに圧縮応力ストレスライナーおよび埋め込みSiGeの効果で極めて高い電気特性を持つpMOSFETのチャネル内の歪分布測定し、大きな歪が導入されるメカニズムを明らかにして、デバイス特性との対応を得た。本年は、ラマンスペクトルが本質的に励起光照射領域の情報をすべて含んでいることに着目し、スペクトルからチャネル歪のみを抽出する方法を確立した。この手法により極微細デバイス(ゲート長30nm)のチャネル歪の測定に成功した。結果として約2.5GPaの圧縮応力がpMOSFETのチャネル領域に導入されていることが明らかになった。
ラマン分光測定の高分解能化の第2の手法は液浸レンズの採用である。NAが高いレンズを用いることで空間分解能の向上を達成した。NA=1.4で、b(1/e2の強度のhalf width)=200nmを得た。さらに、高NAレンズを用いることにより、励起レーザのZ偏光成分が増大する。これにより、従来のラマン分光法では不可能であった異性2軸応力評価の可能性を提示した。
本研究ではさらに、Siデバイスで最も重要な構成要素であるSiO2膜に注目した。UV/可視ラマン分光法を用いることにより超平坦SiO2/Si界面の応力評価を行った。極界面近傍ではSiとOの結合状態に起因した圧縮応力を確認した。一方、内部では逆に引っ張り応力であった。これは、SiとSiO2の熱膨張係数差によるものである。
その他各種Si LSIプロセスにおける歪評価を、主にラマン分光法を用いて評価を行い、ラマン分光法の有用性を示すと同時に、プロセス歪に関する様々な知見を得た。

Research Products

• [Journal Article] Evaluation of local strain in Si using UV-Raman spectroscopy (2009)
  • Author(s): Atsushi Ogura, 他
  • Journal Title: Materials Science and Engineering B 159-160 Pages: 206-211
  • Peer Reviewed
• [Journal Article] A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal-Oxide-Semiconductor Field-Effect Transistors and Fin-Type Metal-Oxide-Semiconductor Field-Effect Transistors (2009)
  • Author(s): Tetsuro Hayashida, Atsushi Ogura, 他
  • Journal Title: Jpn.J.Appl.Phys. 48
  • NAID: 210000066790
  • Peer Reviewed
• [Journal Article] Improvement of CVD SiO2 by Post Deposition Microwave Plasma Treatment (2009)
  • Author(s): Kohki Nagata, A.Ogura, 他
  • Journal Title: ECS Transactions 19 Pages: 55-66
  • Peer Reviewed
• [Journal Article] UV-Raman Spectroscopy Study on SiO2/Si Interface (2009)
  • Author(s): Maki Hattori, Atsushi Ogura, 他
  • Journal Title: ECS Transactions 1 Pages: 45-51
  • Peer Reviewed
• [Journal Article] Evaluation of super-critical thickness strained-Si on insulator (sc-SSOI) substrate (2009)
  • Author(s): Daisuke Kosemura, Atsushi Ogura, 他
  • Journal Title: Study of Strain Induction for Metal-Oxide-Semiconductor Field-Effect Transistors using Transparent Dummy Gates and Stress Liners 48
  • Peer Reviewed
• [Journal Article] Channel-Stress Enhancement for Scaled pMOSFETs by using Damascene Gate with Top-Cut Compressive Stress Liner and eSiGe (2009)
  • Author(s): Satoru Mayuzumi, Atsushi Ogura, 他
  • Journal Title: IEEE Trans. Electron Devices 56 Pages: 620-626
  • Peer Reviewed
• [Journal Article] Study on the Degradation of p-n Diode Characteristics Caused by Small Angle Grain Boundary in Multi-Crystalline Silicon Substrate for Solar Cells (2009)
  • Author(s): Tomihisa Tabana, Atsushi Ogura, 他
  • Journal Title: Jpn.J.Appl.Phys 48
  • NAID: 210000067693
  • Peer Reviewed
• [Journal Article] Characterization of Strain for High Performance Metal-Oxide-Semiconductor Field-Effect-Transistor (2008)
  • Author(s): Disuke Kosemura, Atsushi Ogurat
  • Journal Title: Jpn. J. Appl. Phys. 47 Pages: 2538-2543
  • NAID: 210000064529
  • Peer Reviewed
• [Journal Article] Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Tempera ture Dependences of Sputtered Titanium Nitride Gate Work Func tion and Their Effect on Device Characteristics (2008)
  • Author(s): Yongxun Liu, Atsushi Ogura, 他
  • Journal Title: Jpn. J. Appl. Phys. 47 Pages: 2433-2437
  • Peer Reviewed
• [Journal Article] W-CVD using(i-C3H7C5H4)2WH2 (2008)
  • Author(s): A. Ogura, 他
  • Journal Title: J. Vacume Science & Tech. 26 Pages: 561-564
  • Peer Reviewed
• [Journal Article] Evaluation of Si_3N_4/Si interface by UV Raman spectroscopy (2008)
  • Author(s): Atsushi Ogura, 他
  • Journal Title: Appl. Surf. Sci. 254 Pages: 6229-6231
  • Peer Reviewed
• [Journal Article] Evaluation of super-critical thickness strained-Si on insulator (sc-SSOI) substrate (2008)
  • Author(s): Atsushi Ogura, 他
  • Journal Title: Solid State Electronics. 52 Pages: 1845-1848
  • Peer Reviewed
• [Journal Article] Evaluation and Control of Strain in Si Induced by Patterned Si N Stressor (2008)
  • Author(s): Atsushi Ogura, 他
  • Journal Title: Electrochemical and Solid-State Letters 12
  • Peer Reviewed
• [Presentation] Material Exploration of ZrO2-Based Dielectric Thin Films for DRAM Capacitors by Composition-Spread Film Method (2010)
  • Author(s): Yuji Kiyota, Atsushi Ogura, 他
  • Organizer: The 4th Global COE International Symposium on "Practical Chemical Wisdom"～ Joint Symposium with MANA, NIMS ～Advanced Materials Design at Nano-and Mesoscales toward Practical Chemical Wisdom
  • Place of Presentation: Tokyo
  • Year and Date: 2010-01-14
• [Presentation] Channel Strain Analysis in Damascene-gate pMOSFETs on Si (100) and (110) Substrate by Conventional and Cross-sectional Raman Spectroscopy (2009)
  • Author(s): Munehisa Takei, Atsushi Ogura, 他
  • Organizer: 2009 Materials Research Society Fall Meeting
  • Place of Presentation: Boston
  • Year and Date: 2009-11-30
• [Presentation] Evaluation of interfacial Layer for Restraint of Fermi Level Pinning (2009)
  • Author(s): Yuta Iwashita, Atsushi Ogura, 他
  • Organizer: 22nd International Microprocesses and Nanotechnology Conference
  • Place of Presentation: Sapporo
  • Year and Date: 2009-11-19
• [Presentation] GeSbTe-thin film formation by CVD for next generation memory(PCRAM : Phase Change RAM) materials (2009)
  • Author(s): Hideaki Machida, Atsushi Ogura, 他
  • Organizer: Advanced Metallization Conference 19th Asian Session
  • Place of Presentation: Tokyo
  • Year and Date: 2009-10-20
• [Presentation] Impact of adequate selection of channel direction on(001) and (110) waferorientation for strained nanowire transistors (2009)
  • Author(s): A.Seike, Atsushi Ogura, 他
  • Organizer: 2009 International Conference on Solid State Devices and Materials (SSDM 2009)
  • Place of Presentation: Sendai
  • Year and Date: 2009-10-09
• [Presentation] Channel Strain Analysis in High Performance Damascene-gate pMOSFETs by High Spatial Resolution Raman Spectroscopy (2009)
  • Author(s): Munehisa Takei, Atsushi Ogura, 他
  • Organizer: 2009 International Conference on Solid State Devices and Materials (SSDM 2009)
  • Place of Presentation: Sendai
  • Year and Date: 2009-10-08
• [Presentation] HAX-PES Study of SiN Film for Charge Storage Layer in High Performance SONOS Type Flash Memory Cell (2009)
  • Author(s): Daisuke Kosemura, Atsushi Ogura, 他
  • Organizer: 2009 International Conference on Solid State Devices and Materials (SSDM 2009)
  • Place of Presentation: Sendai
  • Year and Date: 2009-10-08
• [Presentation] Evaluation of anisotropic biaxial stress using an immersion Evaluation of anisotropic biaxial stress using an immersion lens by Raman analysis based on the polarization rules (2009)
  • Author(s): Daisuke Kosemura, Atsushi Ogura, 他
  • Organizer: 2009 International Conference on Solid State Devices and Materials (SSDM 2009)
  • Place of Presentation: Sendai
  • Year and Date: 2009-10-08
• [Presentation] Superiority of ALD TiN with TDMAT Precursor for Metal-Gate MOSFET (2009)
  • Author(s): Tetsurou Hayashida, Atsushi Ogura, 他
  • Organizer: 2009 International Conference on Solid State Devices and Materials (SSDM 2009)
  • Place of Presentation: Sendai
  • Year and Date: 2009-10-08
• [Presentation] Experimental investigation of electron-phonon scattering effect (2009)
  • Author(s): I.Tsuchida, Atsushi Ogura, 他
  • Organizer: 2009 International Conference on Solid State Devices and Materials (SSDM 2009)
  • Place of Presentation: Sendai
  • Year and Date: 2009-10-08
• [Presentation] Electron-phonon Scattering Effect on Strained Si Nanowire FETs at Low Temperature (2009)
  • Author(s): I.Tsuchida, Atsushi Ogura, 他
  • Organizer: 216th Electrochemical Society Meeting
  • Place of Presentation: Vienna, Austria
  • Year and Date: 2009-10-07
• [Presentation] Demonstration of Transconductance Enhancement on (110) and (100) Strained-nanowire FETs (2009)
  • Author(s): A.Seike, Atsushi Ogura, 他
  • Organizer: 216th Electrochemical Society Meeting
  • Place of Presentation: Vienna, Austria
  • Year and Date: 2009-10-07
• [Presentation] Evaluation of Multi-crystalline Silicon Substrates for Solar Cells by Raman Spectroscopy (2009)
  • Author(s): Tomihisa Tachibana, Atsushi Ogura, 他
  • Organizer: 216th Electrochemical Society Meeting
  • Place of Presentation: Vienna, Austria
  • Year and Date: 2009-10-06
• [Presentation] Evaluation of multi-crystalline silicon substrates for solar cells by Raman spectroscopy (2009)
  • Author(s): Michio Tajima, Atsushi Ogura, 他
  • Organizer: 13th Intemational Conference on Defects -Recognition, Imaging and Physics in Semiconductors (DRIPXIII)
  • Place of Presentation: Wheering, West Virginia
  • Year and Date: 2009-09-15
• [Presentation] Observation of Two-Dimensional Distribution of Lattice Inclination and Strain in Strained Si Wafers by Synchrotron X-Ray Topography (2009)
  • Author(s): Takayoshi Shimura, Atsushi Ogura, 他
  • Organizer: 13th International Conference on Defects -Recognition, Imaging and Physics in Semiconductors (DRIPXIII)
  • Place of Presentation: Wheering, West Virginia
  • Year and Date: 2009-09-15
• [Presentation] Evaluation of Strain and Crystal Quality in Si during Shallow Trench Isolation Process Using UV-Raman Spectroscopy (2009)
  • Author(s): Daisuke Kosemura, Atsushi Ogura, 他
  • Organizer: 13th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors
  • Place of Presentation: Wheering, West Virginia
  • Year and Date: 2009-09-14
• [Presentation] Detail analysis of Σ9 grain boundaries in multi-crystalline silicon substrates for solar cell (2009)
  • Author(s): Junichi Masuda, Atsushi Ogura, 他
  • Organizer: 19th Workshop on Crystalline Silicon Solar Cells & Modules : Materials and Processes
  • Place of Presentation: Vail, Co
  • Year and Date: 2009-08-10
• [Presentation] Recombination velocities at grain boundaries in polycrystalline silicon (2009)
  • Author(s): Yoshio Ohshita, Atsushi Ogura, 他
  • Organizer: 19th Workshop on Crystalline Silicon Solar Cells & Modules : Materials and Processes
  • Place of Presentation: Vail, Co
  • Year and Date: 2009-08-10
• [Presentation] Photoluminescence analysis of impurity precipitation on small angle grain boundaries in multi-crystalline Silicon (2009)
  • Author(s): Michio Tajima, Atsushi Ogura, 他
  • Organizer: 20th Workshop on Crystalline Silicon Solar Cells & Modules : Materials and Processes
  • Place of Presentation: Vail, Co
  • Year and Date: 2009-08-10
• [Presentation] Improvement of CVD SiO2 by post deposition microwave plasma treatment (2009)
  • Author(s): Kouki Nagata, Atsushi Ogura, 他
  • Organizer: 215th Electrochemical Society Meeting
  • Place of Presentation: San Francisco
  • Year and Date: 2009-05-28
• [Presentation] UV-Raman spectroscopy study on SiO2/Si interface (2009)
  • Author(s): Maki Hattori, Atsushi Ogura, 他
  • Organizer: 215th Electrochemical Society Meeting
  • Place of Presentation: San Francisco
  • Year and Date: 2009-05-25
• [Presentation] Study of Strain Introduction in the Channel of MOSFET with T ransparent Dummy Gate and Si_3N_4 Stressor (2008)
  • Author(s): Daisuke Kosemura, Atsushi Ogura, 他
  • Organizer: 5th International Symposium on Advanced Sc ience and Technology of Silicon Materials,
  • Place of Presentation: Hawaii, USA
  • Year and Date: 2008-11-13
• [Presentation] Micro-Raman study of channel strain in high performance pFE Ts with compressive stress liner and eSiGe using damascene gate technolog (2008)
  • Author(s): M. Takei, A. Ogura, 他
  • Organizer: 5th International Symposium on Advanced Sc ience and Technology of Silicon Materials,
  • Place of Presentation: Hawaii, USA
  • Year and Date: 2008-11-13
• [Presentation] Behaviors of ultra thin SiGe layer by annealing (2008)
  • Author(s): Yu Yamamoto, Atsushi Ogura, 他
  • Organizer: 5th International Symposium on Advanced Sc ience and Technology of Silicon Materials,
  • Place of Presentation: Hawaii, USA
  • Year and Date: 2008-11-13
• [Presentation] Suppression of SiC Surface Roughening during High Temperatur e Annealing by Atmospheric Control (2008)
  • Author(s): S. Kinoshita, A. Ogura, 他
  • Organizer: 5th International Symposium on Advanced Sc ience and Technology of Silicon Materials,
  • Place of Presentation: Hawaii, USA
  • Year and Date: 2008-11-13
• [Presentation] The in-situ measurement of thermal expansion coefficient of thin SiGe layer on Si (001) by XRD (2008)
  • Author(s): Hirotaka Kurozaki, Atsushi Ogura, 他
  • Organizer: 5th International Symposium on Advanced Sc ience and Technology of Silicon Materials,
  • Place of Presentation: Hawaii, USA
  • Year and Date: 2008-11-11
• [Presentation] A Comparative Study of the Electrical Characteristics of Sputter ed TiN. Gate Planar MOSFETs and FinFETs (2008)
  • Author(s): T. Hayashida, A. Ogura, 他
  • Organizer: 2008 International Workshop on Dielectric Thin Films for Future ULSI Devices : Scieince and Technology
  • Place of Presentation: Tokyo
  • Year and Date: 2008-11-10
• [Presentation] Evaluation of Transconductance Enhancement of <110> and <100> -Channel Strained Si Nanowire Field-Effect Transistors (2008)
  • Author(s): A. Seike, A. Ogura, 他
  • Organizer: 2008 International Workshop on Dielectric T hin Films for Future ULSI Devices : Scieince and Technology
  • Place of Presentation: Hawaii, USA
  • Year and Date: 2008-11-10
• [Presentation] Investigation of Structural Defects in Strained Si Wafers by Syn chrotron X-rav Tonoeranhv (2008)
  • Author(s): Takayoshi Shimura, Atsushi Ogura, 他
  • Organizer: 5th International Symposium on Advanced Sc ience and Technology of Silicon Materials,
  • Place of Presentation: Hawaii, USA
  • Year and Date: 2008-11-10
• [Presentation] Ion Beam Irradiation to Type IV Collagen for Biologic Reactivity (2008)
  • Author(s): Yuichiro Shiga, Atsushi Ogura, 他
  • Organizer: 5th International Symposium on Advanced Sc ience and Technology of Silicon Materials,
  • Place of Presentation: Hawaii, USA
  • Year and Date: 2008-11-10
• [Presentation] New Analysis of Heavily Doped Boron and Arsenic in Shallow Junctions by X-ray Photoelectron Spectroscopy (2008)
  • Author(s): K. Tsutsui, A. Ogura, 他
  • Organizer: ESSDERC2008
  • Place of Presentation: Edinburgh, Great Britein
  • Year and Date: 2008-10-16
• [Presentation] Transconductance Enhancement of Strained <110> and <100> S Nanowire Channel Field-Effect Transistors (2008)
  • Author(s): I. Tsuchida, A. Ogura, 他
  • Organizer: 214th Electrochemical Society Meeting
  • Place of Presentation: Hawaii, USA
  • Year and Date: 2008-10-14
• [Presentation] Study on Stress Memorization by Argon Implantation and Annea ling (2008)
  • Author(s): M. Hino, A. Ogura, 他
  • Organizer: 214th Electrochemical Society Meeting
  • Place of Presentation: Hawaii, USA
  • Year and Date: 2008-10-13
• [Presentation] Study of Stress Effect on Replacement Gate Technology with C ompressive Stress Liner and eSiGe for pFETs (2008)
  • Author(s): S. Yamakawa, A. Ogura, 他
  • Organizer: 2008 International Conference on Simulation of Semiconductor Processes and Devices
  • Place of Presentation: Hakone, Japan
  • Year and Date: 2008-09-10
• [Presentation] High Spatial Resolution Evaluation of Strain in High-Performance Si MOSFET by UV-Raman Spectroscopy (2008)
  • Author(s): D. Kosemura, A. Ogura, 他
  • Organizer: 21th International Conference on Raman Spe ctroscopy
  • Place of Presentation: Uxbridge, Great Britein
  • Year and Date: 2008-08-20
• [Presentation] Evaluation of multi-crystalline silicon substrates with p-n diode array (2008)
  • Author(s): T. Tachibana, A. Ogura, 他
  • Organizer: 5th International Symposium on Advanced Sc ience and Technology of Silicon Materials,
  • Place of Presentation: Denver, USA
  • Year and Date: 2008-08-05
• [Presentation] Channel-Stress Study on Gate-Size Effects for Damascene-Gate p MOSFETs with Top-Cut Compressive Stress Liner and eSiGe (2008)
  • Author(s): S. Mayuzumi, A. Ogura, 他
  • Organizer: 2008 Symposium on VLSI Technology and c ircuit.
  • Place of Presentation: Hawaii, USA
  • Year and Date: 2008-06-18
• [Presentation] Evaluation of local strain in Si using UV-Raman spectro scopy (2008)
  • Author(s): Atsushi Ogura
  • Organizer: Euro-MRS 2008, Symposium on Advanced Silicon Materials Research for Electronic and Photovoltaic Applications,
  • Place of Presentation: Strasbourg, France
  • Year and Date: 2008-05-27
• [Presentation] S Evaluation and control of strain in Si induced by patterned Si N stressor (2008)
  • Author(s): H. Saito, A. Ogura, 他
  • Organizer: 213th Electrochemical Society Meeting I
  • Place of Presentation: Phonix, USA
  • Year and Date: 2008-05-21
• [Presentation] Chemical Vapor deposition using Pt (PF3) 4 and Ni (PF3) 4 (2008)
  • Author(s): M. Ishikawa, A. Ogura, 他
  • Organizer: 213th Electrochemical Society Meeting
  • Place of Presentation: Phonix, USA
  • Year and Date: 2008-05-20
• [Presentation] Transconductance Enhancement by Utilizing Pattern Depe ndent Oxidation in Silicon Nanowire Field-Effect Transis tors. (2008)
  • Author(s): A. Seike, A. Ogura, 他
  • Organizer: 213th Electrochemical Society Meeting
  • Place of Presentation: Phonix, USA
  • Year and Date: 2008-05-20
• [Presentation] Application of Synchrotron X-ray Diffraction (2008)
  • Author(s): T. Shimura, A. Ogura, 他
  • Organizer: 213th Electrochemical Society Meeting
  • Place of Presentation: Phonix, USA
  • Year and Date: 2008-05-19
• [Presentation] Application of Synchrotron X-ray Diffraction Methods to Gate S tacks of Advanced MOS devices (2008)
  • Author(s): T. Shimura, Atsushi Ogura, 他
  • Organizer: 213th Electrochemical Society Meeting
  • Place of Presentation: Arizona, USA
  • Year and Date: 2008-05-19
• [Remarks]
  • URL: http://www.isc.meiji.ac.jp/~nanotech/index.htm
• [Patent(Industrial Property Rights)] アニール装置及びこれを用いたアニール方法 (2009)
  • Inventor(s): 小椋厚志
  • Industrial Property Rights Holder: 明治大学
  • Acquisition Date: 2009-04-10