窒素配列ナノ構造の局所光応答とコヒーレントデバイス応用

• Project/Area Number: 20045011
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: Kobe University
• Principal Investigator: 喜多 隆 Kobe University, 工学研究科, 教授 (10221186)
• Project Period (FY): 2008 – 2009
• Project Status: Completed (Fiscal Year 2009)
• Budget Amount: ¥5,100,000 (Direct Cost: ¥5,100,000); Fiscal Year 2009: ¥2,600,000 (Direct Cost: ¥2,600,000); Fiscal Year 2008: ¥2,500,000 (Direct Cost: ¥2,500,000)
• Keywords: 不純物 / アイソエレクトロニック発光 / GaAs / 窒素ペア / 光子放出

Research Abstract

本研究ではエピタキシャル結晶成長技術で制御した不純物原子オーダリングを利用してGaAs中に窒素ペアの配列ナノ構造を創り上げ、配列構造で制御可能な単一光子生成やコヒーレンスにかかわる新しい量子情報通信機能を実証を目指している。
窒素ペアの配列ナノ空間構造の作製と励起子状態の磁場制御
窒素ペアを配列させて作製するためにわれわれはGaAs(001)表面のオーダリングを利用した。特に(2x4)再構成構造のGaダイマに優先的に吸着する窒素は(001)面上に均一な窒素ペア構造を造ることを見出した。これらペア構造の形状異方性によって励起子は微細構造分裂することを昨年までに見出している。光子源としてこの励起子準位を利用するには微細構造分裂状態を制御することが必要になる。本年度は磁場によって、この励起子微細構造の精密な制御について実証した。その結果、窒素ペアはC_<2v>の対称性を有し、反磁性シフトにゼーマン分裂が重畳した特性を示すことを明らかにした。ゼーマン分離のg値は約5%増加することが本研究より明らかになった。
単一光子デバイスの試作
本年度はデバイス構造を具体的に試作するに当たって、発光波長約0.85μmに対して単一モードの光閉じ込めになるように光ガイド層の最適設計を行った。光閉じ込めにはAlGaAsクラッド層で窒素ペアを内包するGaAs活性層をサンドイッチし、発光強度増大を実証した。

Research Products

• [Journal Article] Statistical Fluctuation of Magnetization in Mn-Composition Modulated CdMnTe Quantum Wires (2010)
  • Author(s): Y.Harada
  • Journal Title: J.Appl.Phys (印刷中)
  • Peer Reviewed
• [Journal Article] Temperature dependence of photoluminescence characteristics of excitons in stacked quantum dots and auantum dot chains (2010)
  • Author(s): O.Kojima
  • Journal Title: J.Appl.Phys (印刷中)
  • Peer Reviewed
• [Journal Article] Analysis of Thermoreflectance Signals and Characterization of Thermal Conductivity of Metal Thin Films (2009)
  • Author(s): S.Miyake
  • Journal Title: Rev.Sci.Instrum. 80
  • Peer Reviewed
• [Journal Article] Vertical- Geometry All-Optical Switches Based on InAs/GaAs Quantum Dots in a Cavity (2009)
  • Author(s): C.Y.Jin
  • Journal Title: Appl.Phys.Lett. 95
  • Peer Reviewed
• [Journal Article] Anisotropic Linear Polarization Luminescence in CdTe/CdMnTe Quantum Wires (2009)
  • Author(s): Y.Harada
  • Journal Title: Journal of Luminescence 129 Pages: 1448-1453
  • Peer Reviewed
• [Journal Article] Exciton Responce Controlled by Introducing a Spacer Layer in Nitrided InAs Quantum Dots (2009)
  • Author(s): M.Mamizuka
  • Journal Title: physica status solidi C 9
  • Peer Reviewed
• [Journal Article] Transient Reflectivity Responce with Negative Time Delay Caused by Femtosecond Pulse Pronaeation in GaAs Thin Films (2009)
  • Author(s): S.Watanabe
  • Journal Title: physica status solidi C 9
  • Peer Reviewed
• [Journal Article] 原子層窒素ドープGaAsを用いた励起子微細構造の制御と光子源に向けた展開 (2009)
  • Author(s): 喜多隆
  • Journal Title: 応用物理 78 Pages: 355-359
  • NAID: 10024751604
  • Peer Reviewed
• [Journal Article] Electron Tomography of Embedded Semiconductor Quantum Dot (2008)
  • Author(s): T. Inoue
  • Journal Title: Appl. Phys. Lett. 92
  • Peer Reviewed
• [Journal Article] Photoluminescence Dynamics of Coupled Quantum Dots (2008)
  • Author(s): H. Nakatani
  • Journal Title: Journal of Luminescence 128 Pages: 975-977
  • Peer Reviewed
• [Journal Article] Fine Structure Splitting of Isoelectronic Bound Excitons in Nitrogen-Doped GaAs (2008)
  • Author(s): T. Kita
  • Journal Title: Phys. Rev. B
  • NAID: 120000943214
  • Peer Reviewed
• [Journal Article] Dual Chopped Photoreflectance Spectroscopy for Nondestructive Characterization of Semiconductors and Semiconductor Nanostructures (2008)
  • Author(s): T. Kita
  • Journal Title: Rev. Sci. Instrum. 79
  • NAID: 120001348320
  • Peer Reviewed
• [Journal Article] Photoluminescence Characteristics of Quantum Dots with Electronic States Interconnected along Growth Direction (2008)
  • Author(s): O. Kojima
  • Journal Title: J. Appl. Phys. 103
  • Peer Reviewed
• [Journal Article] Flexible Field Emission Device Using Carbon Nanofiber Nano composite Sheet (2008)
  • Author(s): M. Kawamura
  • Journal Title: Appl. Phys. Express 1
  • Peer Reviewed
• [Journal Article] Anisotropic Magneto-Optical Effects in CdTe/CdMnTe Quantum Wire Structure (2008)
  • Author(s): Y. Harada
  • Journal Title: Phys. Rev. B 78
  • Peer Reviewed
• [Journal Article] Ultrafast All-Optical Control of Excitons Confined in GaAs Thin Films (2008)
  • Author(s): O. Kojima
  • Journal Title: Appl. Phys. Express 1
  • Peer Reviewed
• [Journal Article] Real Time Analysis of Self-Assembled InAs/GaAs Quantum Dot Growth by Probing Reflection High-Energy Electron Diffraction Chevron Image (2008)
  • Author(s): T. Kudo
  • Journal Title: J. Appl. Phys. 104
  • Peer Reviewed
• [Journal Article] Effects of Indium Segregation on Optical Properties of Nitrogen-Doped InAs/GaAs Quantum Dots (2008)
  • Author(s): T. Inoue
  • Journal Title: J. Appl. Phys. 104
  • Peer Reviewed
• [Journal Article] Narrow-band deep-ultraviolet light emitting device using All-xGdxN" T. Kita, S. Kitayama, M. Kawamura, O. Wada, Y. Chigi, Y. Kasai, T. Nishimoto, H. Tanaka, and M. Kobayashi (2008)
  • Author(s): T. Kita
  • Journal Title: Appl. Phys. Lett. 93
  • Peer Reviewed
• [Presentation] Vertical-Geometry All-Optical Switches Based on InAs/GaAs Quantum Dots in a Cavity (2010)
  • Author(s): C.Y.Jin
  • Organizer: SPIE Photonis West
  • Place of Presentation: Moscone Center(米国)
  • Year and Date: 2010-01-23
• [Presentation] Vertically- Stacked InAs Quantum Dots for Polarization-Independent Semiconductor Optical Amplifiers (2010)
  • Author(s): O.Kojima
  • Organizer: SPIE Photonics West
  • Place of Presentation: Moscone Center(米国)
  • Year and Date: 2010-01-23
• [Presentation] Exciton Fine Structures of Ordered Nitrogen Pairs in GaAs Fabricated by Using Reconstructed Surface (2010)
  • Author(s): T.Kita(招待講演)
  • Organizer: Symposium on Surface and Nano Science 2010
  • Place of Presentation: 雫石プリンスホテル(岩手県)
  • Year and Date: 2010-01-15
• [Presentation] GaAs中の窒素等電子束縛励起子における励起子ダイナミックス (2009)
  • Author(s): 原田幸弘
  • Organizer: 第20回光物性研究会
  • Place of Presentation: 大阪市立大学(大阪府)
  • Year and Date: 2009-12-11
• [Presentation] Vertical- stacking of InAs quantum dots for polarization-insens itive semiconductor optical amplifiers (2009)
  • Author(s): T.Inoue
  • Organizer: Workshop on Information, Nano, and Phot onics Technology 2009
  • Place of Presentation: 神戸大学(兵庫県)
  • Year and Date: 2009-12-01
• [Presentation] Direct Impurity Doping into Self-Assembled InAs/GaAs Quantum Dots (2009)
  • Author(s): K.Sasayama
  • Organizer: Workshop on Information, Nano, and Photonics Technoloev 2009
  • Place of Presentation: 神戸大学(兵庫県)
  • Year and Date: 2009-12-01
• [Presentation] Effects of In-Plain Exciton Transfer on Intraband Relaxation Process in Stacked InAs Quantum Dots (2009)
  • Author(s): M.Mamizuka
  • Organizer: Workshop on Information, Nano, and Photonics Technoloev 2009
  • Place of Presentation: 神戸大学(兵庫県)
  • Year and Date: 2009-12-01
• [Presentation] Narrowband Ultraviolet Light Emitting Devices Using Rare-Earth Ions (2009)
  • Author(s): T.Kita(招待講演)
  • Organizer: International Symposium for Phosphor Materials 2009
  • Place of Presentation: NSTホール(新潟県)
  • Year and Date: 2009-11-04
• [Presentation] GaAs中窒素配列構造の制御とスケーラブル光子デバイスに向けた基礎サイエンス (2009)
  • Author(s): 喜多隆(招待講演)
  • Organizer: 東北大学電気通信研究所共同プロジェクト研究会「半導体サイエンスと半導体テクノロジーの融合一技術を先導する半導体サイエンスを目指して-」
  • Place of Presentation: 茂庭荘(宮城県)
  • Year and Date: 2009-10-16
• [Presentation] GaAs中の窒素等電子束縛励起子微細構造におけるポピュレーション (2009)
  • Author(s): 原田幸弘
  • Organizer: 日本物理学会2009年秋季大会
  • Place of Presentation: 熊本大学(熊本県)
  • Year and Date: 2009-09-27
• [Presentation] Exciton Polarization Splitting of Nitrogen Pairs in GaAs (2009)
  • Author(s): T.Kita(招待講演)
  • Organizer: SemiconNano2009
  • Place of Presentation: 阿南工業高校(徳島県)
  • Year and Date: 2009-08-09
• [Presentation] Magnetic-Field Control of Exciton Fine Structure Splitting in Nitrogen Delta-Doned GaAs (2009)
  • Author(s): Y.Harada
  • Organizer: International Conference on Modulated Semiconductor Structures
  • Place of Presentation: 神戸国際会議場(兵庫県)
  • Year and Date: 2009-07-19
• [Presentation] Polarization controlled emission from electronically coupled stacked InAs quantum dots (2009)
  • Author(s): T.Inoue
  • Organizer: International Conference on Modulated Semiconductor Structures
  • Place of Presentation: 神戸国際会議場(兵庫県)
  • Year and Date: 2009-07-19
• [Presentation] 積層超高密度量子ドットの発光特性に対する3次元的結合効果 (2008)
  • Author(s): 小島磨
  • Organizer: 光物性研究会
  • Place of Presentation: 大阪
  • Year and Date: 2008-12-05
• [Presentation] 窒素をデルタドープしたGaAsにおける等電子束縛励起子微細構造分裂の磁場制御 (2008)
  • Author(s): 原田幸弘
  • Organizer: 光物性研究会
  • Place of Presentation: 大阪
  • Year and Date: 2008-12-05
• [Presentation] InAs量子ドット積層構造による端面発光偏波制御 (2008)
  • Author(s): 岸本一正
  • Organizer: 電気関係学会関西支部連合大会
  • Place of Presentation: 神戸
  • Year and Date: 2008-11-08
• [Presentation] GaAs中窒素束縛励起子微細構造の制御と応用 (2008)
  • Author(s): 喜多隆
  • Organizer: 第69回応用物理学会学術講演会シンポジウム
  • Place of Presentation: 名古屋
  • Year and Date: 2008-09-30
• [Presentation] 自己形成過程を利用したInAs量子ドットへのダイレクトドーピング (2008)
  • Author(s): 木戸聖
  • Organizer: 第69回応用物理学会学術講演会シンポジウム
  • Place of Presentation: 名古屋
  • Year and Date: 2008-09-20
• [Presentation] 原子層窒素ドーピングによるInAs量子ドットからのIn偏析制御 (2008)
  • Author(s): 井上知也
  • Organizer: 第69回応用物理学会学術講演会シンポジウム
  • Place of Presentation: 名古屋
  • Year and Date: 2008-09-20
• [Presentation] 積層量子ドットにおける励起子発光強度に対する電子間結合効果 (2008)
  • Author(s): 小島磨
  • Organizer: 第6回応用物理学会学術講演会シンポジウム
  • Place of Presentation: 名古屋
  • Year and Date: 2008-09-04
• [Presentation] Influence of Indium Segregation on Optical Properties in InAs/GaAs Quantum Dots (2008)
  • Author(s): T. Inoue
  • Organizer: International Conference on Molecular Beam Epitaxy
  • Place of Presentation: Vancouver (カナダ)
  • Year and Date: 2008-08-03
• [Presentation] Selective Impurity Doping into InAs Quantum Dots by Controlling the Self-Assembled Process (2008)
  • Author(s): S. Kido
  • Organizer: International Conference on Molecular Beam Epitaxy
  • Place of Presentation: Vancouver (カナダ)
  • Year and Date: 2008-08-03
• [Presentation] GaAsへの希薄窒素添加と局所光応答 (2008)
  • Author(s): 喜多隆
  • Organizer: 量子ナノ材料セミナー
  • Place of Presentation: 東京
  • Year and Date: 2008-07-23
• [Presentation] Lengthening of Exciton Lifetime owing to Expansion of Electron Envelope Functions in Stacked Quantum Dots (2008)
  • Author(s): O. Kojima
  • Organizer: International Conference on Optical, Optoe lectronic Materials and Applications
  • Place of Presentation: Edmonton (カナダ)`
  • Year and Date: 2008-07-20
• [Presentation] Exciton Response Controlled by Introducing a Spacer Layer in Nitrided InAs Quantum Dots (2008)
  • Author(s): M. Mamizuka
  • Organizer: International Conference on Optical, Optoe lectronic Materials and Applications
  • Place of Presentation: Edmonton (カナダ)
  • Year and Date: 2008-07-20
• [Presentation] Fine structure of bound excitons in nitrogen-doped GaAs (2008)
  • Author(s): T. Kita
  • Organizer: International Conference on Luminescence and Optical Spectroscopy of Condenced Matte
  • Place of Presentation: Lyon (フランス)
  • Year and Date: 2008-07-07
• [Presentation] Optical Control of Residual Excitons for Ultrafast Nonlineai Response in GaAs Thin Films (2008)
  • Author(s): O. Kojima
  • Organizer: International Conference on Excitonic Process in Condensed Matter
  • Place of Presentation: 京都
  • Year and Date: 2008-06-22
• [Presentation] Near-Field Photoluminescence of Exciton Magnetic Polarons in CdTe/Cd0.75Mn0.25Te Quantum Wires (2008)
  • Author(s): Y. Harada
  • Organizer: International Conference on Excitonic Process in Condensed Matter
  • Place of Presentation: 京都
  • Year and Date: 2008-06-22
• [Presentation] Exciton Fine Structure of Nitrogen Isoelectronic Center (2008)
  • Author(s): Y. Harada
  • Organizer: International Conference on Indium Phosphide and Related Materials
  • Place of Presentation: Paris (フランス)
  • Year and Date: 2008-05-26
• [Book] 自己組織化ハンドブック (2009)
  • Author(s): 喜多隆
  • Total Pages: 2
  • Publisher: 株式会社エヌ・ティー・エス
• [Remarks]
  • URL: http://www.research.kobe-u.ac.jp/eng-photonics/
• [Remarks]
  • URL: http://www.research.kobe-u.ac.jp/eng-photonics/
• [Patent(Industrial Property Rights)] 量子ドットの形成方法及び半導体装置の製造方法 (2008)
  • Inventor(s): 喜多隆、和田修、木戸聖、笹山憲吾、安岡奈美
  • Industrial Property Rights Holder: 新戸大学富士通株式会社
  • Industrial Property Number: 2008-200251
  • Filing Date: 2008-08-01