Investigation of crystal growth mechanisms of Si crystals floating on Si melt and development of crystal growth technique to realize high-quality Si multicrystals

• Project/Area Number: 20226001
• Research Category: Grant-in-Aid for Scientific Research (S)
• Allocation Type: Single-year Grants
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Tohoku University
• Principal Investigator: NAKAJIMA Kazuo Tohoku University, エネルギー科学研究科, 客員教授 (80311554)
• Co-Investigator(Kenkyū-buntansha): USAMI Noritaka 東北大学, 金属材料研究所, 准教授 (20262107) ; FUJIWARA Kozo 東北大学, 金属材料研究所, 准教授 (70332517) ; KUTSUKAKE Kentaro 東北大学, 金属材料研究所, 助教 (00463795) ; MORISHITA Kohei 京都大学, エネルギー科学研究科, 特定助教 (00511875)
• Project Period (FY): 2008 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥149,110,000 (Direct Cost: ¥114,700,000、Indirect Cost: ¥34,410,000); Fiscal Year 2010: ¥13,390,000 (Direct Cost: ¥10,300,000、Indirect Cost: ¥3,090,000); Fiscal Year 2009: ¥77,350,000 (Direct Cost: ¥59,500,000、Indirect Cost: ¥17,850,000); Fiscal Year 2008: ¥58,370,000 (Direct Cost: ¥44,900,000、Indirect Cost: ¥13,470,000)
• Keywords: 結晶成長 / シリコン / 太陽電池 / 多結晶 / 結晶欠陥 / 浮遊キャスト成長 / 浮遊キャスト法 / Siバルク多結晶 / 亜粒界 / ランダム粒界 / せん断応力 / デンドライト結晶 / ファセット成長

Research Abstract

We clarified fundamental crystal growth mechanisms of Si from melt such as formation mechanisms of microstructures and crystal defects by using an originally developed crystal growth furnace with in-situ observation system and model crystal growth experiments with purposely designed multi-seed crystals. The newly obtained fundamental knowledge on crystal growth mechanisms has been successfully implemented for development of floating cast method as a novel crystal growth technique to realize high-quality Si multicrystals with controlled microstructures and crystal defects, which will be utilized for high-efficiency solar cells.

Research Products

• [Journal Article] Implementation of faceted dendrite growth on floating cast method to realize high-quality multicrsytalline Si ingot for solar cells (2011)
  • Author(s): N.Usami, I.Takahashi, K.Kutsukake, K.Fujiwara, K.Nakajima
  • Journal Title: J.Appl.Phys. 109
  • Peer Reviewed
• [Journal Article] Impact of type of crystal defects in multicrystalline Si on electrical properties and interaction with impurities (2011)
  • Author(s): I.Takahashi, N.Usami, H.Mizuseki, Y.Kawazoe, G.Stokkan, K.Nakajima
  • Journal Title: J.Appl.Phys. 109
  • Peer Reviewed
• [Journal Article] Impact of type of crystal defects in multicrystalline Si on electrical prope and interaction with impurities (2011)
  • Author(s): I.Takahashi, N.Usami, H.Mizuseki, Y.Kawazoe, G.Stokkan, K.Nakajima
  • Journal Title: J.Appl.Phys. Volume: 109
  • Peer Reviewed
• [Journal Article] Implementation of faceted dendrite growth on floating cast method to realize high-quality multicrsytalline Si ingot for solar cells (2011)
  • Author(s): N.Usami, I.Takahashi, K.Kutsukake, K.Fujiwara, K.Nakajima
  • Journal Title: J.Appl.Phys. Volume: 109
  • Peer Reviewed
• [Journal Article] Pattern formation mechanism of a periodically faceted interface during crystallization of Si (2010)
  • Author(s): M.Tokairin, K.Fujiwara, K.Kutsukake, H.Kodama, N.Usami, K.Nakajima
  • Journal Title: J.Cryst.Growth 312 Pages: 3670-3674
  • Peer Reviewed
• [Journal Article] Growth mechanism of the Si <110> faceted dendrite (2010)
  • Author(s): K.Fujiwara, H.Fukuda, N.Usami, K.Nakajima, S.Uda
  • Journal Title: Phys.Rev.B 81
  • Peer Reviewed
• [Journal Article] A computational investigation of relationship between shear stress and multicrystalline structure in silicon (2010)
  • Author(s): I.Takahashi, N.Usami, K.Kutsukake, K.Morishita, K.Nakajima
  • Journal Title: Jpn.J.Appl.Phys. 49
  • NAID: 210000068399
  • Peer Reviewed
• [Journal Article] Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed (2010)
  • Author(s): I.Takahashi, N.Usami, K.Kutsukake, G.Stokkan, K.Morishita, K.Nakajima
  • Journal Title: J.Crystal Growth 312 Pages: 897-901
  • Peer Reviewed
• [Journal Article] Relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth (2010)
  • Author(s): N.Usami, R.Yokoyama, I.Takahashi, K.Kutsukake, K.Fujiwara, K.Nakajima
  • Journal Title: J.Appl.Phys. 107
  • Peer Reviewed
• [Journal Article] Growth mechanism of the Si <110> faceted dendrite (2010)
  • Author(s): K.Fujiwara, H.Fukuda, N.Usami, K.Nakajima, S.Uda
  • Journal Title: Physical Review B Volume: 81
  • Peer Reviewed
• [Journal Article] Pattern formation mechanism of a periodically faceted interface during crystallization of Si (2010)
  • Author(s): M.Tokairin, K.Fujiwara, K.Kutsukake, H.Kodama, N.Usami, K.Nakajima
  • Journal Title: J.Crystal Growth Volume: 312 Pages: 3670-3674
  • Peer Reviewed
• [Journal Article] A computational investigation of relationship between shear stress and multicrystalline structure in silicon (2010)
  • Author(s): I.Takahashi, 宇佐美徳隆, 沓掛健太朗, K.Morishita, 中嶋一雄
  • Journal Title: Jpn.J.Appl.Phys. (未定, 印刷中)
  • NAID: 210000068399
  • Peer Reviewed
• [Journal Article] Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed (2010)
  • Author(s): I.Takahashi, 宇佐美徳隆, 沓掛健太朗, G.Stokkan, K.Morishita, 中嶋一雄
  • Journal Title: J.Cryst.Growth 312 Pages: 897-901
  • Peer Reviewed
• [Journal Article] Relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth (2010)
  • Author(s): 宇佐美徳隆, R.Yokoyama, I.Takahashi, 沓掛健太朗, 藤原航三, 中嶋一雄
  • Journal Title: J.Appl.Phys. 107 Pages: 13511-13511
  • Peer Reviewed
• [Journal Article] Formation mechanism of the faceted interface: in-situ observation of the Si (100) crystal-melt interface during crystallization (2009)
  • Author(s): M.Tokairin, K.Fujiwara, K.Kutsukake, N.Usami, K.Nakajima
  • Journal Title: Phys.Rev.B. 80
  • Peer Reviewed
• [Journal Article] Growth Behavior of Faceted Si Crystals at Grain Boundary Formation (2009)
  • Author(s): K.Fujiwara, S.Tsumura, M.Tokairin, K.Kutsukake, N.Usami, S.Uda, K.Nakajima
  • Journal Title: J.Cryst.Growth 312 Pages: 19-23
  • Peer Reviewed
• [Journal Article] Microstructures of Si multicrystals and their impact on minority carrier diffusion length (2009)
  • Author(s): H.Y.Wang, N.Usami, K.Fujiwara, K.Kutsukake, K.Nakajima
  • Journal Title: Acta Materialia 57 Pages: 3268-3276
  • Peer Reviewed
• [Journal Article] Quantitative analysis of sub-grain boundaries in Si multicrystals and their impact on electrical properties and solar cell performance (2009)
  • Author(s): K.Kutsukake, N.Usami, T.Ohtaniuchi, K.Fujiwara, K.Nakajima
  • Journal Title: J.Appl.Phys. 105
  • Peer Reviewed
• [Journal Article] Floating cast method to realize high-quality Si bulk multicrystals for solar cells (2009)
  • Author(s): Y.Nose, I.Takahashi, W.Pan, N.Usami, K.Fujiwara, K.Nakajima
  • Journal Title: J.Crystal Growth 311 Pages: 228-231
  • Peer Reviewed
• [Journal Article] 太陽電池用多結晶シリコン中の亜粒界についての基礎研究 (2009)
  • Author(s): 沓掛健太朗、宇佐美徳隆、藤原航三、中嶋一雄
  • Journal Title: 日本結晶成長学会誌 36 Pages: 13-20
  • Peer Reviewed
• [Journal Article] Growth behavior of faceted Si crystals at grain boundary formation (2009)
  • Author(s): 藤原航三, S.Tsumura, M.Tokairin, 沓掛健太朗, 宇佐美徳隆, S.Uda, 中嶋一雄
  • Journal Title: J.Cryst.Growth 312 Pages: 19-23
  • Peer Reviewed
• [Journal Article] Formation mechanism of the faceted interface : in-situ observation of the Si(100)crystal-melt interface during crystallization (2009)
  • Author(s): M.Tokairin, 藤原航三, 沓掛健太朗, 宇佐美徳隆, 中嶋一雄
  • Journal Title: Phys.Rev.B 80 Pages: 174108-174108
  • Peer Reviewed
• [Journal Article] Microstructures of Si multicrystals and their impact on minority carrier diffusion length (2009)
  • Author(s): H.Y.Wang, 宇佐美徳隆, 藤原航三, 沓掛健太朗, 中嶋一雄
  • Journal Title: Acta Materialia 57 Pages: 3268-3276
  • Peer Reviewed
• [Journal Article] (2009)
  • Author(s): 沓掛健太朗, 宇佐美徳隆, 藤原航三, 中嶋一雄
  • Journal Title: Cap.6 Fundamental understanding of subgrain boundaries, in"Crystal Growth of Si for Solar Cells"(edited by K. Nakajima, and N. Usami)(Springer)
• [Journal Article] (2009)
  • Author(s): 藤原航三, 中嶋一雄
  • Journal Title: Cap.5 Mechanism of Dendrite Crystals, in"Crystal Growth of Si for Solar Cells"(edited by K. Nakajima, and N. Usami)(Springer)
• [Journal Article] Floating cast method to realize high-quality Si bulk multicrystals for solar cells (2009)
  • Author(s): Y. Nose, I. Takahashi, W. Pan, N. Usami, K. Fujiwara, and K. Nakaiima
  • Journal Title: J. Cryst. Growth 311 Pages: 228-231
  • Peer Reviewed
• [Journal Article] Quantitative analysis of sub-grain boundaries in Si multicrystals and their impact on electrical properties and solar cell performance (2009)
  • Author(s): K. Kutsukake, N. Usami, T. Ohtaniuchi, K. Fujiwara, and K. Nakajima
  • Journal Title: J. Appl. Phys 105 Pages: 44909-44909
  • Peer Reviewed
• [Journal Article] 太陽電池用高品質シリコンバルク多結晶の製造技術 (2009)
  • Author(s): 宇佐美徳隆、藤原航三、沓掛健太朗、中嶋一雄
  • Journal Title: 電子材料 48 Pages: 10-16
• [Journal Article] Impact of defect density in Si bulk multicrystals on gettering effect of impurities (2008)
  • Author(s): I.Takahashi, N.Usami, R.Yokoyama, Y.Nose, K.Kutsukake, K.Fujiwara, K.Nakajima
  • Journal Title: Jpn.J.Appl.Phys. 47 Pages: 8790-8792
  • NAID: 40016389603
  • Peer Reviewed
• [Journal Article] Structural origin of a cluster of bright spots in reverse bias electroluminescence image of solar cells based on Si multicrystals (2008)
  • Author(s): N.Usami, K.Kutsukake, K.Fujiwara, I.Yonenaga, K.Nakajima
  • Journal Title: Appl.Phys.Express 1
  • NAID: 10025081680
  • Peer Reviewed
• [Journal Article] In situ observation of Si faceted dendrite growth from low-degree-of-undercooling melts (2008)
  • Author(s): K. Fujiwara, K. Maeda, N. Usami, G. Sazaki, Y. Nose, A. Nomura, T. Shishido and K. Nakaiima
  • Journal Title: Acta Materialia 56 Pages: 2663-2668
  • Peer Reviewed
• [Journal Article] Growth mechanism of Si-faceted dendrites (2008)
  • Author(s): K. Fujiwara, K. Maeda, N. Usami, K. Nakajima
  • Journal Title: Phys. Rev. Lett 101 Pages: 55503-55503
  • NAID: 40019490875
  • Peer Reviewed
• [Journal Article] Structural origin of a cluster of bright spots in reverse bias electroluminescence image of solar cells based on Si multicrystals (2008)
  • Author(s): N. Usami, K. Kutsukake, K. Fujiwara, I. Yonenaga, and K. Nakajima
  • Journal Title: Appl. Phys. Express 1 Pages: 75001-75001
  • NAID: 10025081680
  • Peer Reviewed
• [Journal Article] Impact of detect density in Si bulk multicrystals on gettering effect of impurities (2008)
  • Author(s): I. Takahashi, N. Usami, R. Yokoyama, Y. Nose, K. Kutsukake, K. Fujiwara, and K. Nakajima
  • Journal Title: Jpn. J. Appl. Phys 47 Pages: 8790-8792
  • Peer Reviewed
• [Journal Article] Siバルク多結晶の組織制御による太陽電池の高効率化 (2008)
  • Author(s): 宇佐美徳隆、藤原航三、沓掛健太朗、中嶋一雄
  • Journal Title: 電子情報通信学会技術研究報告 108 Pages: 73-76
  • NAID: 110006792719
• [Presentation] 材料科学からの結晶シリコン太陽電池の高効率化へのアプローチ (2010)
  • Author(s): 沓掛健太朗、宇佐美徳隆、藤原航三、森下浩平、中嶋一雄
  • Organizer: 日本金属学会・日本鉄鋼協会東海支部学術討論会
  • Place of Presentation: 名古屋大学(名古屋)
  • Year and Date: 2010-02-23
• [Presentation] Toward realization of high-quality multicrystalline silicon for solar cells (2010)
  • Author(s): N.Usami
  • Organizer: in The Forum on the Science and Technology of Silicon Materials 2010
  • Place of Presentation: Okayama, Japan
• [Presentation] High efficiency solar cells obtained from small size ingots with 30cmφ by controlling the distribution and orientation of dendrite crystals using the dendritic casting method (2010)
  • Author(s): K.Nakajima, K.Morishita, K.Kutsukake, K.Fujiwara, N.Usami, S.Ono, I.Yamasaki
  • Organizer: in the CSSC-4 Workshop(Invited Speaker)
  • Place of Presentation: Taipei, Taiwan
• [Presentation] Impact of coherency of grain boundaries in Si multicrystals on materials properties to affect solar cell performance (2010)
  • Author(s): N.Usami, I.Takahashi, K.Kutsukake, K.Nakajima
  • Organizer: in the CSSC-4 Workshop(Invited Speaker)
  • Place of Presentation: Taipei, Taiwan
• [Presentation] Growth of high quality Si multicrystals by controlling their arrangement of dendrite crystals along the bottom of ingots and reducing the density of random grain boundaries (2010)
  • Author(s): K.Nakajima
  • Organizer: in Nature Photonics Technology Conference "The Future of Photovoltaics", TFT hall(Invited Speaker)
  • Place of Presentation: Tokyo, Japan
• [Presentation] High efficiency solar cells obtained from small size ingots with 30cmφ by controlling the distribution and orientation of dendrite crystals grown along the bottom of the ingots (2010)
  • Author(s): K.Nakajima, K.Kutsukake, K.Fujiwara, N.Usami, S.Ono, I.Yamasaki
  • Organizer: in The 25th European Photovoltaic Solar Energy Conference and Exhibition (25th EU PVSEC) The 5th World Conference on Photovoltaic Energy Conversion (WCPEC-5) Feria Valencia
  • Place of Presentation: Valencia, Spain
• [Presentation] Suppression of generation of dislocations in Si multicrystals by controlling coherency of grain boundaries at the initial stage of crystal growth (2010)
  • Author(s): N.Usami, I.Takahashi, R.Yokoyama, K.Kutsukake, K.Fujiwara, K.Nakajima
  • Organizer: in The 25th European Photovoltaic Solar Energy Conference and Exhibition (25th EU PVSEC), The 5th World Conference on Photovoltaic Energy Conversion (WCPEC-5), Feria Valencia
  • Place of Presentation: Valencia, Spain
• [Presentation] Impact of grain boundaries in multicrystalline Si on materials properties (2010)
  • Author(s): N.Usami
  • Organizer: in 2010 International Conference of Solid State Devices and Materials
  • Place of Presentation: Tokyo, Japan
• [Presentation] Growth mechanism of Si faceted dendrites and its application to the casting method for growing structure-controlled polycrystalline Si ingots (2010)
  • Author(s): K.Fujiwara, K.Nakajima, K.Kutsukake, N.Usami, S.Uda
  • Organizer: in the 16th International Conference on Crystal Growth
  • Place of Presentation: Beijin, China
• [Presentation] Formation mechanism of twin boundaries in silicon multicrystals during crystal growth (2010)
  • Author(s): K.Kutsukake, T.Abe, N.Usami, K.Fujiwara, K.Morishita, K.Nakajima
  • Organizer: in The 35th IEEE Photovoltaic Specialists Conference, Hawaii Convention Center, Honolulu, In Proceedings of The 35th IEEE Photovoltaic Specialists Conference(pp.810-811)(2010).
  • Place of Presentation: Hawaii, USA
• [Presentation] High efficiency solar cells obtained from small size ingots with 30 cmφ by controlling the distribution and orientation of dendrite crystals grown along the bottom of the ingots (2010)
  • Author(s): K.Nakajima, K.Kutsukake, K.Fujiwara, N.Usami, S.Ono, I.Yamasaki
  • Organizer: The 25th European Photovoltaic Solar Energy Conference and Exhibition (25th EU PVSEC) The 5th World Conference on Photovoltaic Energy Conversion (WCPEC-5)
  • Place of Presentation: バレンシア(スペイン)
• [Presentation] Suppression of generation of dislocations in Si multicrystals by controlling coherency of grain boundaries at the initial stage of crystal growth (2010)
  • Author(s): N.Usami, I.Takahashi, R.Yokoyama, K.Kutsukake, K.Fujiwara, K.Nakajima
  • Organizer: The 25th European Photovoltaic Solar Energy Conference and Exhibition (25th EU PVSEC) The 5th World Conference on Photovoltaic Energy Conversion (WCPEC-5)
  • Place of Presentation: バレンシア(スペイン)
• [Presentation] High efficiency solar cells obtained from small size ingots with 30 cmφ by controlling the distribution and orientation of dendrite crystals using the dendritic casting method (2010)
  • Author(s): K.Nakajima, K.Morishita, K.Kutsukake, K.Fujiwara, N.Usami, S.Ono, I.Yamasaki
  • Organizer: CSSC-4 Workshop
  • Place of Presentation: 台北(台湾)(招待講演)
• [Presentation] Growth of high quality Si multicrystals by controlling their arrangement of dendrite crystals along the bottom of ingots and reducing the density of random grain boundaries (2010)
  • Author(s): K.Nakajima
  • Organizer: The Future of Photovoltaics
  • Place of Presentation: 東京ファッションタウンホール(東京)(招待講演)
• [Presentation] Formation mechanism of twin boundaries in silicon multicrystals during crystal growth (2010)
  • Author(s): K.Kutsukake, T.Abe, N.Usami, K.Fujiwara, K.Morishita, K.Nakajima
  • Organizer: The 35^<th> IEEE Photovoltaic Specialists Conference
  • Place of Presentation: ハワイコンベンションセンター(ホノルル)
• [Presentation] Impact of coherency of grain boundaries in Si multicrystals on materials properties to affect solar cell performance (2010)
  • Author(s): N.Usami, I.Takahashi, K.Kutsukake, K.Nakajima
  • Organizer: CSSC-4 Workshop
  • Place of Presentation: 台北(台湾)(招待講演)
• [Presentation] Growth mechanism of Si faceted dendrites and its application to the casting method for growing structure-controlled polycrystalline Si ingots (2010)
  • Author(s): K.Fujiwara, K.Nakajima, K.Kutsukake, N.Usami, S.Uda
  • Organizer: 16th International Conference on Crystal Growth
  • Place of Presentation: 北京(中国)(招待講演)
• [Presentation] Impact of grain boundaries in multicrystalline Si on materials properties (2010)
  • Author(s): N.Usami
  • Organizer: 2010 International Conference of Solid State Devices and Materials
  • Place of Presentation: 東京(日本)(招待講演)
• [Presentation] Toward realization of high-quality multicrystalline silicon for solar cells (2010)
  • Author(s): N.Usami
  • Organizer: The Forum on the Science and Technology of Silicon Materials 2010
  • Place of Presentation: 岡山(日本)(招待講演)
• [Presentation] デンドライト利用キャスト成長法によるSi多結晶インゴットの組織と欠陥制御による高品質化 (2010)
  • Author(s): 中嶋一雄、沓掛健太朗、宇佐美徳隆、藤原航三
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学(平塚)
• [Presentation] シリコンバルク多結晶の結晶成長過程における欠陥発生機構の解明 (2010)
  • Author(s): 阿部匠朗, 沓掛健太朗, 藤原航三, 宇佐美徳隆, 中嶋一雄
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学(平塚)
• [Presentation] 複合種結晶を用いた多結晶Siの成長と転位発生メカニズムの解明 (2010)
  • Author(s): 高橋勲、宇佐美徳隆、沓掛健太朗、Gaute Stokkan、森下浩平、中嶋一雄
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学(平塚)
• [Presentation] 結晶シリコン太陽電池の高効率化に対する結晶成長からのアプローチ (2009)
  • Author(s): 宇佐美徳隆, 沓掛健太朗, 藤原航三, 中嶋一雄
  • Organizer: 広域産学官交流ネットワーク
  • Place of Presentation: メルパルク長野(長野)
  • Year and Date: 2009-12-03
• [Presentation] 結晶成長過程における多結晶組織形成メカニズムとその制御 (2009)
  • Author(s): 宇佐美徳隆, 沓掛健太朗, 藤原航三, 中嶋一雄
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 茨城県つくば市
  • Year and Date: 2009-03-31
• [Presentation] Siの結晶成長メカニズムと太陽電池用高品質Siバルク多結晶インゴットの成長技術 (2009)
  • Author(s): 藤原航三
  • Organizer: 第44回応用物理学会スクール
  • Place of Presentation: 茨城県つくば市
  • Year and Date: 2009-03-30
• [Presentation] 結晶シリコン太陽電池の現状と課題 : 結晶成長技術開発の重要性 (2009)
  • Author(s): 宇佐美徳隆
  • Organizer: 電気学会
  • Place of Presentation: 北海道札幌市
  • Year and Date: 2009-03-19
• [Presentation] Comprehensive study of defects in Si Multicrystals Toward High-Efficiency Solar Cells (2009)
  • Author(s): K. Kutsukake, N, Usami, K. Fujiwara, and K. Nakajima
  • Organizer: 18^<th> International photovoltaic science and engineering conference and exhibition
  • Place of Presentation: Kolkota(India)
  • Year and Date: 2009-01-21
• [Presentation] Quantitative Analysis of Defects and Microstructures in Si Multicrystals Using X-ray Diffraction (2009)
  • Author(s): K.Kutsukake, N.Usami, K.Fujiwara, K.Nakajima
  • Organizer: in 19th International Photovoltaic Science and Engineering Conference and Exhibition (PVSEC19)
  • Place of Presentation: Jeju, Korea
• [Presentation] Improvement in quantitative analysis of defects and microstructures in Si multicrystals using X-ray diffraction (2009)
  • Author(s): K.Kutsukake, N.Usami, K.Fujiwara, K.Nakajima
  • Organizer: in 2009 International Conference on Solid State Devices and Materials (SSDM2009)
  • Place of Presentation: Sendai, Japan
• [Presentation] A computational investigation of relationship between shear stress and multicrystal structure in Si (2009)
  • Author(s): I.Takahashi, N.Usami, K.Kutsukake, K.Morishita, K.Nakajima
  • Organizer: in 2009 International Conference on Solid State Devices and Materials (SSDM2009)
  • Place of Presentation: Sendai, Japan
• [Presentation] Control of microstructures and crystal defects in Si multicrystals grown by the casting method -how to improve the quality of multicrystals to the level of single crystals- (2009)
  • Author(s): K.Nakajima, N.Usami, K.Fujiwara, K.Kutsukake
  • Organizer: in 24th European Photovoltaic Solar Energy Conference and Exhibition, CCH- Congress Center and International Fair Hamburg
  • Place of Presentation: Hamburg, Germany
• [Presentation] How can we decrease defect density in Si multicrystals to realize high-efficiency solar cells? (2009)
  • Author(s): N.Usami, K.Kutsukake, I.Takahashi, R.Yokoyama, K.Fujiwara, K.Nakajima
  • Organizer: in 24th European Photovoltaic Solar Energy Conference and Exhibition, CCH- Congress Center and International Fair
  • Place of Presentation: Hamburg,Germany
• [Presentation] A computational investigation of relationship betwenn shear stress and multicrystal structure in Si (2009)
  • Author(s): I.Takahashi, N.Usami, R.Yokoyama, K.Kutsukake, K.Fujiwara, K.Morishita, K.Nakajima
  • Organizer: in the CSSC-3 Workshop
  • Place of Presentation: Trondheim, Norway
• [Presentation] Growth of high-quality Si multicrystals using dendritic casting method and mechanism to obtain high-quality crystals with low defects (2009)
  • Author(s): K.Nakajima, K.Fujiwara, K.Kutsukake, N.Usami
  • Organizer: in the CSSC-3 Workshop
  • Place of Presentation: Trondheim, Norway
• [Presentation] Analysis of microstructures in Si multicrystals and their impact on electrical properties (2009)
  • Author(s): N.Usami, H.Y.Wang, K.Fujiwara, K.Kutsukake, K, Nakajima
  • Organizer: in the CSSC-3 Workshop
  • Place of Presentation: Trondheim, Norway
• [Presentation] Role of crystal growth in challenges to high-efficiency solar cells (2009)
  • Author(s): N.Usami, K.Fujiwara, K.Kutsukake, K.Nakajima
  • Organizer: in GCOE Singapore workshop (NTU-Tohoku U)
  • Place of Presentation: Singapore
• [Presentation] In-situ observation of Si (100) crystal-melt interface (2009)
  • Author(s): M.Tokairin, K.Fujiwara, K.Kutsukake, N.Usami, K.Nakajima
  • Organizer: in GCOE Singapore workshop (NTU-Tohoku U)
  • Place of Presentation: Singapore
• [Presentation] Comprehensive study of defects in Si Multicrystals Toward High-Efficiency Solar Cells (2009)
  • Author(s): K.Kutsukake, N, Usami, K.Fujiwara, K.Nakajima
  • Organizer: in PVSEC18
  • Place of Presentation: Kolkata, India
• [Presentation] Growth of high-quality Si multicrystals using dendritic casting method and mechanism to obtain high-quality crystals with low defects (2009)
  • Author(s): 中嶋一雄, 藤原航三, 沓掛健太朗, 宇佐美徳隆
  • Organizer: CSSC-3 Workshop
  • Place of Presentation: トロンハイム(ノルウェー)
• [Presentation] Quantitative Analysis of Defects and Microstructures in Si Multicrystals Using X-ray Diffraction (2009)
  • Author(s): 沓掛健太朗, 宇佐美徳隆, 藤原航三, 中嶋一雄
  • Organizer: 19th International Photovoltaic Science and Engineering Conference and Exhibition(PVSEC19)
  • Place of Presentation: 済州(韓国)
• [Presentation] Improvement in quantitative analysis of defects and microstructures in Si multicrystals using X-ray diffraction (2009)
  • Author(s): 沓掛健太朗, 宇佐美徳隆, 藤原航三, 中嶋一雄
  • Organizer: 2009 International Conference on Solid State Devices and Materials (SSDM2009)
  • Place of Presentation: 仙台
• [Presentation] A computational investigation of relationship between shear stress and multicrystal structure in Si (2009)
  • Author(s): 高橋勲, 宇佐美徳隆, 沓掛健太朗, 森下浩平, 中嶋一雄
  • Organizer: 2009 International Conference on Solid State Devices and Materials(SSDM2009)
  • Place of Presentation: 仙台
• [Presentation] How can we decrease defect density in Si multicrystals to realize high-efficiency solar cells? (2009)
  • Author(s): 宇佐美徳隆, 沓掛健太朗, 高橋勲, R.Yokoyama, 藤原航三, 中嶋一雄
  • Organizer: 24th European Photovoltaic Solar Energy Conference and Exhibition
  • Place of Presentation: ハンブルグ(ドイツ)
• [Presentation] Control of microstructures and crystal defects in Si multicrystals grown by the casting method -how to improve the quality of multicrystals to the level of single crystals- (2009)
  • Author(s): 中嶋一雄, 宇佐美徳隆, 藤原航三, 沓掛健太朗
  • Organizer: 24th European Photovoltaic Solar Energy Conference and Exhibition
  • Place of Presentation: ハンブルグ(ドイツ)
• [Presentation] Analysis of microstructures in Si multicrystals and their impact on electrical properties (2009)
  • Author(s): 宇佐美徳隆, H.Y.Wang, 藤原航三, 沓掛健太朗, 中嶋一雄
  • Organizer: CSSC-3 Workshop
  • Place of Presentation: トロンハイム(ノルウェー)
• [Presentation] A computational investigation of relationship betwenn shear stress and multicrystal structure in Si (2009)
  • Author(s): 高橋勲, 宇佐美徳隆, R.Yokoyama, 沓掛健太朗, 藤原航三, 森下浩平, 中嶋一雄
  • Organizer: CSSC-3 Workshop
  • Place of Presentation: トロンハイム(ノルウェー)
• [Presentation] 結晶成長過程におけるシリコン多結晶の欠陥発生メカニズム (2009)
  • Author(s): 宇佐美徳隆, 沓掛健太朗, 藤原航三, 中嶋一雄
  • Organizer: 結晶加工と評価技術第145委員会 第118回研究会
  • Place of Presentation: 九州大学(福岡)
• [Presentation] シリコンのファセットデンドライトの成長機構 (2009)
  • Author(s): 藤原航三、前田健作、宇佐美徳隆、宇田聡、中嶋一雄
  • Organizer: 第39回結晶成長国内会議(NCCG-39)
  • Place of Presentation: 名古屋大学(名古屋)
• [Presentation] 太陽電池用バルク多結晶シリコンの結晶成長過程における欠陥発生 (2009)
  • Author(s): 沓掛健太朗、高橋勲、宇佐美徳隆、藤原航三、中嶋一雄
  • Organizer: 第39回結晶成長国内会議(NCCG-39)
  • Place of Presentation: 名古屋大学(名古屋)
• [Presentation] 結晶成長過程におけるシリコン多結晶の亜粒界発生メカニズム (2009)
  • Author(s): 宇佐美徳隆, 沓掛健太朗, 藤原航三, 中嶋一雄
  • Organizer: 電子情報通信学会
  • Place of Presentation: 東北大学(仙台)
• [Presentation] Siのファセットデンドライトの成長メカニズム (2008)
  • Author(s): 藤原航三
  • Organizer: 日本学術振興会結晶成長の科学と技術第161委員会第59回研究会
  • Place of Presentation: 東京都目黒区
  • Year and Date: 2008-12-19
• [Presentation] Comprehensive study of sub-grain boundaries in Si multicrystals toward defect engineering for high-efficiency solar cell (2008)
  • Author(s): N. Usami, K. Kutsukake, K. Fujiwara, and K. Nakajima
  • Organizer: 5th International Symposium on Advanced Science and Technology of Silicon Materials
  • Place of Presentation: Kona(USA)
  • Year and Date: 2008-11-12
• [Presentation] Toward defect engineering in Si multicrystal for high-efficiency solar cells : Fundamental mechanisms of generation of sub-grain boundaries, spatial distribution, electrical properties, and impact on solar cell nerformance (2008)
  • Author(s): N. Usami, K. Kutsukake, K. Fujiwara, T. Ohtaniuchi, and K. Nakaiima
  • Organizer: 23rd European Photovoltaic Solar Energy Conference and Exhibition
  • Place of Presentation: Velencia(Spain)
  • Year and Date: 2008-09-03
• [Presentation] On the generation mechanism of sub-grain boundaries during directional growth of Si bulk multicrystal (2008)
  • Author(s): K. Kutsukake, N. Usami, K. Fujiwara, and K. Nakajima
  • Organizer: 23rd European Photovoltaic Solar Energy Conference and Exhibition
  • Place of Presentation: Velencia(Spain)
  • Year and Date: 2008-09-03
• [Presentation] Growth of high-quality Si multicrystals using dendritic casting method and mechanism to obtain high-quality crystals with low defects (2008)
  • Author(s): K. Nakajima, K. Fujiwara, K. Kutsukake, N. Usami, and S. Okamoto
  • Organizer: 23rd European Photovoltaic Solar Energy Conference and Exhibition
  • Place of Presentation: Valencia(Spain)
  • Year and Date: 2008-09-02
• [Presentation] 結晶Si太陽電池の高効率化へ向けたSiバルク多結晶中亜粒界の総合研究 (2008)
  • Author(s): 沓掛健太朗, 大谷内毅, 宇佐美徳隆, 藤原航三, 中嶋一雄
  • Organizer: 第5回次世代の太陽光発電シンポジウム
  • Place of Presentation: 宮崎県宮崎市
  • Year and Date: 2008-06-26
• [Presentation] シリコンバルク多結晶におけるせん断応力と多結晶組織との関係 (2008)
  • Author(s): 高橋勲, 宇佐美徳隆, 横山竜介, 沓掛健太朗, 森下浩平, 藤原航三, 中嶋一雄
  • Organizer: 第5回次世代の太陽光発電シンポジウム
  • Place of Presentation: 宮崎県宮崎市
  • Year and Date: 2008-06-26
• [Presentation] Reduction of shunt resistance in solar cells based on Si multicrystals by accumulated imuurities at suberain boundaries (2008)
  • Author(s): N. Usami, K.Kutsukake, K. Fujiwara, and K. Nakajima
  • Organizer: The Fourth Asian Conference on Crystal Growth and Crystal Technoloev(CGCT-4)
  • Place of Presentation: 宮城県仙台市
  • Year and Date: 2008-05-23
• [Presentation] The effect of Ge addition on growth of Si faceted dendrite (2008)
  • Author(s): M. Tokairin, K. Fujiwara, N. Usami, K. Kutsukake, K. Morishita and K. Nakaiima
  • Organizer: The Fourth Asian Conference on Crystal Growili and Crystal Technology(CGCT-4)
  • Place of Presentation: 宮城県仙台市
  • Year and Date: 2008-05-23
• [Presentation] Growth of high-quality Si multicrystals with same grain orientation and large grains using dendritic casting method and formation mechanism of dendrite crystals with parallel twins (2008)
  • Author(s): K. Nakajima, K. Fujiwara, N. Usami, and S. Okamoto
  • Organizer: The Fourth Asian Conference on Crystal Growth and Crystal Technology(CGCT-4)
  • Place of Presentation: 宮城県仙台市
  • Year and Date: 2008-05-22
• [Presentation] Comprehensive research of sub-grain boundaries in Si bulk multicrystal for solar cells (2008)
  • Author(s): K. Kutsukake, T. Ohtaniuchi, N. Usami, K. Fujiwara, and K. Nakajima
  • Organizer: The Fourth Asian Conference on Crystal Growth and Crystal Technology(CGCT-4)
  • Place of Presentation: 宮城県仙台市
  • Year and Date: 2008-05-22
• [Presentation] Challenges toward high-efficiency solar cells (2008)
  • Author(s): N. Usami, K. Fujiwara, K. Kutsukake, and K. Nakajima
  • Organizer: Tech Horizon 2008
  • Place of Presentation: Riverside(USA)
  • Year and Date: 2008-05-06
• [Presentation] Siバルク多結晶の組織制御による太陽電池の高効率化 (2008)
  • Author(s): 宇佐美徳隆、藤原航三、沓掛健太朗、中嶋一雄
  • Organizer: 電子情報通信学会・シリコン材料・デバイス研究会
  • Place of Presentation: 沖縄県那覇市
  • Year and Date: 2008-04-12
• [Presentation] Comprehensive study of sub-grain boundaries in Si multicrystals toward defect engineering for high-efficiency solar cell (2008)
  • Author(s): N.Usami, K.Kutsukake, K.Fujiwara, K.Nakajima
  • Organizer: in the 5th International Symposium on Advanced Science and Technology of Silicon Materials
  • Place of Presentation: Kona, USA
• [Book] 太陽電池の物理 (2010)
  • Author(s): ペーターヴュルフェル著, 宇佐美徳隆、石原照也、中嶋一雄監訳
  • Publisher: 丸善
• [Book] 太陽電池の物理 (2010)
  • Author(s): ペーターヴュルフェル著, 宇佐美徳隆、石原照也、中嶋一雄 監訳
  • Publisher: 丸善(5月出版予定)
• [Book] Fundamental understanding of subgrain boundaries(Advances in Materials Research 14)(Crystal Growth of Si for Solar Cells, edited by K.Nakajima, and N.Usami)(chap.6) (2009)
  • Author(s): K.Kutsukake, N.Usami, K.Fujiwara, K.Nakajima
  • Publisher: Springer
• [Book] Mechanism of Dendrite Crystal(Advances in Materials Research 14)(Crystal Growth of Si for Solar Cells, edited by K.Nakajima, and N.Usami)(chap.5) (2009)
  • Author(s): K.Fujiwara, K.Nakajima
  • Publisher: Springer
• [Patent(Industrial Property Rights)] Siバルク多結晶インゴットの製造方法 (2010)
  • Inventor(s): 宇佐美徳隆、中嶋一雄、高橋勲
  • Industrial Property Rights Holder: 東北大学
  • Acquisition Date: 2010-06-18
• [Patent(Industrial Property Rights)] Siバルク多結晶インゴットの製造方法 (2010)
  • Inventor(s): 宇佐美徳隆、中嶋一雄、高橋勲
  • Industrial Property Rights Holder: 東北大学
  • Industrial Property Number: 2008-108887
  • Acquisition Date: 2010-06-18
• [Patent(Industrial Property Rights)] 半導体バルク結晶の作製方法 (2009)
  • Inventor(s): 中嶋一雄、藩伍根、野瀬嘉太郎
  • Industrial Property Rights Holder: 東北大学
  • Acquisition Date: 2009-04-17
• [Patent(Industrial Property Rights)] 半導体バルク多結晶の製造方法 (2009)
  • Inventor(s): 宇佐美徳隆、中嶋一雄、沓掛健太朗
  • Industrial Property Rights Holder: 東北大学
  • Industrial Property Number: 2009-120594
  • Filing Date: 2009-05-19
• [Patent(Industrial Property Rights)] Si結晶インゴットの製造方法 (2009)
  • Inventor(s): 中嶋一雄、宇佐美徳隆
  • Industrial Property Rights Holder: 東北大学
  • Patent Publication Number: 2009-173518
  • Filing Date: 2009-08-06
• [Patent(Industrial Property Rights)] Si多結晶インゴット、Si多結晶インゴットの製造方法およびSi多結晶ウェノハ (2009)
  • Inventor(s): 中嶋一雄、藤原航三、宇佐美徳隆
  • Industrial Property Rights Holder: 東北大学
  • Patent Publication Number: 2009-084145
  • Filing Date: 2009-04-25
• [Patent(Industrial Property Rights)] Siバルク多結晶インゴットの製造方法 (2008)
  • Inventor(s): 宇佐美徳隆、中嶋一雄、高橋勲
  • Industrial Property Rights Holder: 東北大学
  • Industrial Property Number: 2008-108887
  • Filing Date: 2008-04-18
• [Patent(Industrial Property Rights)] Si結晶インゴットの製造方法
  • Inventor(s): 中嶋一雄、宇佐美徳隆
  • Industrial Property Rights Holder: 東北大学
  • Industrial Property Number: 2008-180842