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Nano-structure Control of Cu Interconnects by a Very High Purity Plating Processes and Its Application to Next-generation LSIs.

Research Project

Project/Area Number 20226014
Research Category

Grant-in-Aid for Scientific Research (S)

Allocation TypeSingle-year Grants
Research Field Structural/Functional materials
Research InstitutionIbaraki University

Principal Investigator

ONUKI Jin (OONUKI Jin)  茨城大学, 工学部, 教授 (70315612)

Co-Investigator(Kenkyū-buntansha) MIMURA Koji  東北大学, 多元物質科学研究所, 准教授 (00091752)
ISHIKAWA Nobuhiro  独立行政法人物質・材料研究機構, 主任研究員 (00370312)
KONDO Kazuo  大阪府立大学, 工学研究科, 教授 (50250478)
INAMI Takashi  茨城大学, 工学部, 講師 (20091853)
CHONAN Yasunori  秋田県立大学, システム科学技術学部, 助教 (30363740)
ITO Shinji  独立行政法人物質・材料研究機構, 主任研究員 (50370317)
UCHIKOSHI Masahito  東北大学, 多元物質科学研究所, 助教 (60447191)
OHTA Hiromichi  茨城大学, 工学部, 教授 (70168946)
NAGANO Takatoshi  茨城大学, 工学部, 講師 (70343621)
KIMURA Takashi  独立行政法人物質・材料研究機構, 主任研究員 (70370319)
SASAJIMA Yasushi  茨城大学, 工学部, 教授 (80187137)
AOYAMA Takashi  秋田県立大学, システム科学技術学部, 教授 (80363737)
TASHIRO Suguru  茨城大学, 工学部, 講師 (90272111)
一色 実  東北大学, 多元物質科学研究所, 教授 (20111247)
Project Period (FY) 2008 – 2012
Project Status Completed (Fiscal Year 2012)
Budget Amount *help
¥209,690,000 (Direct Cost: ¥161,300,000、Indirect Cost: ¥48,390,000)
Fiscal Year 2012: ¥34,190,000 (Direct Cost: ¥26,300,000、Indirect Cost: ¥7,890,000)
Fiscal Year 2011: ¥37,700,000 (Direct Cost: ¥29,000,000、Indirect Cost: ¥8,700,000)
Fiscal Year 2010: ¥29,640,000 (Direct Cost: ¥22,800,000、Indirect Cost: ¥6,840,000)
Fiscal Year 2009: ¥29,380,000 (Direct Cost: ¥22,600,000、Indirect Cost: ¥6,780,000)
Fiscal Year 2008: ¥78,780,000 (Direct Cost: ¥60,600,000、Indirect Cost: ¥18,180,000)
Keywords電子 / 情報材料 / LSI / Cu配線 / 超高純度硫酸銅 / 抵抗率 / 粒界不純物 / 収差補正TEM / 添加剤フリーめっき / Ru膜 / クレヴァス / 収差補正STEM / Cu 配線 / 添加剤フリー / 超高純度めっき材 / 革新的高導電性 / 分子動力学シミュレーション / TEG / Cuの高純度化 / 微量不純物 / 微細構造 / ULSI / 超高純度めっき材料 / 添加剤フリーめつき技術 / 配線抵抗率 / パルスめっき技術 / 配線評価用TEG
Research Abstract

Grain sizes and their distribution in very narrow Cu wires (≦50nm) have a crucial influence on device performances and reliabilities of LSIs. This is because the average grain size in Cu wires becomes smaller for narrower wires and especially. Very fine grains causes substantial resistivity increase and reliability degradation of Cu wires. In order to reduce resistivity and raise reliability, with the final goal being to enhance LSI performance, we have investigated the purification process of Cu wires using high-purity plating materials and little additives and gotten Cu wires with more than 30% lower resistivity than those made with conventional purity plating materials.

Assessment Rating
Verification Result (Rating)

A

Report

(8 results)
  • 2013 Research Progress Assessment (Verification Result) ( PDF )
  • 2012 Annual Research Report   Final Research Report ( PDF )
  • 2011 Annual Research Report
  • 2010 Annual Research Report   Self-evaluation Report ( PDF )
  • 2009 Annual Research Report
  • 2008 Annual Research Report
  • Research Products

    (79 results)

All 2013 2012 2011 2010 2009 2008 Other

All Journal Article (50 results) (of which Peer Reviewed: 50 results) Presentation (15 results) (of which Invited: 2 results) Remarks (5 results) Patent(Industrial Property Rights) (9 results) (of which Overseas: 2 results)

  • [Journal Article] Structural response of nano-scale damascene copper lines to annealing2013

    • Author(s)
      T.Konkova,Y.Ke,S.Mironov,and J.Onuki
    • Journal Title

      Electrochemistry

      Volume: (掲載確定)

    • Related Report
      2012 Annual Research Report 2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Electron backscatter diffraction analysis of electrodeposited nano-scale copper wires2013

    • Author(s)
      T.Nagano,Y.Sasajima,K.Tamahashi, and J.Onuki
    • Journal Title

      Thin Solid Films

      Volume: (掲載確定)

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Cs-corrected STEM Observation and Atomic Modeling of Grain Boundary Impurities of Very Narrow Cu interconnect2013

    • Author(s)
      Y.Ke,T.Konkova,S.Mironov,K.Tamahashi,and J.Onuki
    • Journal Title

      ECS Electrochemistry Letters

      Volume: (掲載確定)

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] EBSD analysis of microstructures along the depth direction in very narrow Cu wires2013

    • Author(s)
      Y.Ke, T.Namekawa, K.Tamahaashi, and J.Onuki
    • Journal Title

      Electrochemistry

      Volume: 81巻 Pages: 246-250

    • NAID

      10031139478

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Influence of Additive-Free process on the Microstructure of Very Narrow Cu Wires in the Lower Region of a Trench2013

    • Author(s)
      Y.Ke,T.Namekawa,K.Tamahashi and J.Onuki
    • Journal Title

      Influence of Additive-Free process on the Microstructure of Very Narrow Cu Wires in the Lower Region of a Trench

      Volume: 54巻 Pages: 255-259

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Influence of Additive-Free process on the Microstructure of Very Narrow Cu Wires in the Lower Region of a Trench2013

    • Author(s)
      Y.Ke,T.Namekawa,K.Tamahashi and J.Onuki
    • Journal Title

      Influence of Additive-Free process on the Microstructure of Very Narrow Cu Wires in the Lower Region of a Trench

      Volume: 54 Pages: 255-259

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] EBSD analysis of microstructures along the depth direction in very narrow Cu wires2013

    • Author(s)
      Y.Ke, T.Namekawa,K.Tamahaashi, and J.Onuki
    • Journal Title

      Electrochemistry

      Volume: 81 Pages: 246-250

    • NAID

      10031139478

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Cs-corrected STEM Observation and Atomic Modeling of Grain Boundary Impurities of Very Narrow Cu interconnect2013

    • Author(s)
      T.Nagano,Y.Sasajima,K.Tamahashi, and J.Onuki
    • Journal Title

      ECS Electrochemistry Letters

      Volume: 掲載確定

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Electron backscatter diffraction analysis of electrodeposited nano-scale copper wires2013

    • Author(s)
      Y.Ke,T.Konkova,S.Mironov,K.Tamahashi,and J.Onuki
    • Journal Title

      Thin Solid Films

      Volume: 掲載確定

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of annealing temperature on a structure of electrodeposited nano-scale copper wires2012

    • Author(s)
      Y.Ke,T.Konkova,M.Sergey, J.Onuki
    • Journal Title

      Letters on Materials

      Volume: 2巻 Pages: 198-201

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Void Generation Mechanism in Cu Filling Process by Electroplating for Ultra-Fine Trenches2012

    • Author(s)
      Y.Sasajima, T.Satoh,K. Tamahashi and J.Onuki
    • Journal Title

      Mater. Trans

      Volume: 53巻 Pages: 1507-1514

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Void Generation Mechanism in Cu Filling Process by Electroplating for Ultra-Fine Trenches2012

    • Author(s)
      Y. Sasajima, T. Satoh,K. Tamahashi and J.Onuki
    • Journal Title

      Mater. Trans.

      Volume: 53 Pages: 1507-1514

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of annealing temperature on a structure of electrodeposited nano-scale copper wires2012

    • Author(s)
      Y.Ke,T.Konkova,M.Sergey,and J.Onuki
    • Journal Title

      Letters on Materials

      Volume: 2 Pages: 198-201

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Diallyamine type copolymer additive which perfectly bottom-up fills Cu electrodeposition2012

    • Author(s)
      M.Takeuchi, K.Kondo, H.Kuri, M.Bunya, M.Okamoto, T.Saito
    • Journal Title

      J.Electrochem.Soc.

      Volume: 159

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of Additive-Free Plating and High Heating Rate Annealing on the Formation of Low Resistivity Fine Cu Wires2011

    • Author(s)
      J.Onuki, K.Tamahashi, T.Namekawa, Y.Sasajima
    • Journal Title

      Materials Trans.

      Volume: 52巻 Pages: 1818-1823

    • NAID

      10029530409

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Substrate temperature dependence of electrical and structural properties of Ru films2011

    • Author(s)
      Takatoshi Nagano, Kazuya Inokuchi, Kunihiro Tamahashi, Nobuhiro Ishikawa, Yasushi Sasajima, Jin Onuki
    • Journal Title

      Thin Solid Films

      Volume: 520 Issue: 1 Pages: 374-379

    • DOI

      10.1016/j.tsf.2011.07.046

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 高流速めっき法による短時間Cu貫通電極形成および電極の微細組織2011

    • Author(s)
      門田裕行、菅野龍一、伊藤雅彦、大貫仁
    • Journal Title

      エレクトロニクス実装学会誌

      Volume: 14 Pages: 513-518

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of Impurities on the Grain Growth of Polycrystalline Cu Thin Films2011

    • Author(s)
      Yasushi Sasajima, Takeshiro Nagai, Jin Onuki
    • Journal Title

      Electrochemistry

      Volume: 79 Pages: 869-875

    • NAID

      10029657068

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of Additive-Free Plating and High Heating Rate Annealing on the Formation of Low Resistivity Fine Cu Wires2011

    • Author(s)
      Jin onuki, Kunihiro Tamahashi, Takashi Namekawa, Yasushi Sasajima
    • Journal Title

      Materials Trans.

      Volume: 52 Pages: 1818-1823

    • NAID

      10029530409

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] ジアリルアミン添加剤を用いた銅穴埋めめっき2011

    • Author(s)
      阿南善裕、竹内実、岡本尚樹、齊藤丈靖、文屋勝、近藤和夫
    • Journal Title

      表面技術

      Volume: 62 Pages: 728-733

    • NAID

      10030476193

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High-speed through silicon via filling using diallylamine additive2011

    • Author(s)
      T.Hayashi, K.Kondo, M.Takeuchi, T.Saitou, N.Okamoto
    • Journal Title

      J.Electrochem.Soc.

      Volume: 158

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 高純度めっき材料を用いた 低抵抗率Cu配線形成プロセスの8インチウエハによる検証2011

    • Author(s)
      田代優, 打越雅仁, 三村耕司, 一色実, 大貫仁
    • Journal Title

      本金属学会誌 75掲載決定

    • NAID

      10029368773

    • Related Report
      2010 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] 微細Cu配線の微細構造と抵抗率に及ぼす硫酸銅純度の影響2011

    • Author(s)
      田代優, 大貫仁
    • Journal Title

      日本金属学会誌 5

      Pages: 223-228

    • Related Report
      2010 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Development of a Nondestructive Method Utilizing X-ray Diffraction for the Evaluation of Grain Size Distributions of Cu Interconnects2011

    • Author(s)
      T.Inami, J.Onuki, M.Isshiki
    • Journal Title

      Electrochemical and Solid-State Letters 14

    • Related Report
      2010 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Texture and Grain Size Investigation in the Copper Plated Through-Siliconvia for Three Dimensional Chip Stacking Using Electron Backscattering Diffraction2011

    • Author(s)
      H.Kadota, R.Kanno, M.Itou, J.Onuki
    • Journal Title

      Electrochemical and Solid-State Letters

      Volume: 14

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Development of a Nondestructive Method Utilizing X-ray Diffraction for the Evaluation of Grain Size Distributions of Cu Interconnects2011

    • Author(s)
      T.Inami, J.Onuki, M.Isshiki
    • Journal Title

      Electrochemical and Solid-State Letters

      Volume: 14

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 超微細Cu配線の微細構造と抵抗率に及ぼす硫酸銅純度の影響2011

    • Author(s)
      田代優、K, P.Khoo、大貫仁
    • Journal Title

      日本金属学会誌

      Volume: 75 Pages: 223-228

    • NAID

      10028175938

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 高純度めっき材料を用いた低抵抗率Cu配線形成プロセスの8インチウエハによる検証2011

    • Author(s)
      田代優, 門田裕行, 伊藤雅彦, 打越雅仁, 三村耕司, 一色実, 大貫仁
    • Journal Title

      日本金属学会誌

      Volume: 75(掲載決定)

    • NAID

      10029368773

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of the Purity of Plating Materials on the Reduction of Resistivity of Cu Wires for Future LSIs2010

    • Author(s)
      J.Onuki, S.Tashiro, K. P. Khoo, N. Ishikawa, Y.Chonan, T.Kimura, H. Akahoshi
    • Journal Title

      J.Electrochem.Soc.

      Volume: 157巻

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Reduction in resistivity of 50nm wide Cu wire by high heating rate and short time annealing utilizing misorientation energy2010

    • Author(s)
      J.Onuki, K.P.Khoo, Y.Sasajima, Y.Chonan, T.Kimura
    • Journal Title

      J.Appl.Phys.

      Volume: 108巻 Pages: 0443021-0443027

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Reduction in resistivity of 50nm wide Cu wire by high heating rate and short time annealing utilizing misorientation energy2010

    • Author(s)
      J.Onuki, K.P.Khoo, Y.Sasajima, Y.Chonan, T.Kimura
    • Journal Title

      J.Appl.Phys. 108

      Pages: 0443021-7

    • Related Report
      2010 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Impact of High Heating Rate, Low Temperature and Short Time Annealing on the Realization of Low Resistivity Cu Wire2010

    • Author(s)
      J.Onuki, K.Tamahashi, T.Namekawa, Y.Sasajima
    • Journal Title

      Materials Transaction 51

      Pages: 1715-1717

    • NAID

      10026600440

    • Related Report
      2010 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Grain coarsening mechanism of Cuthin films by rapid annealing2010

    • Author(s)
      Y.Sasajima, J.Kageyama, K.P.Khoo, J Onuki
    • Journal Title

      Thin Solid Films 518

      Pages: 6883-6890

    • Related Report
      2010 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Effect of the Purity of Plating Materials on the Reduction of Resitivity of Cu Wires for Future LSIs2010

    • Author(s)
      J.Onuki, S.Tashiro, K.P.Khoo, N.Ishikawa, Y.Chonan, T.Kimura, H.Akahoshi
    • Journal Title

      J.Electrochem.Soc 157

    • Related Report
      2010 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Texture investigation in the trench depth direction of very narrow copper wires less than 100nm wide using electron backscatter diffraction2010

    • Author(s)
      K.P.Khoo, J.Onuki
    • Journal Title

      Thin Solid Films 518

      Pages: 3413-3416

    • Related Report
      2010 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Effect of the Purity of Plating Materials on the Reduction of Resitivity of Cu Wires for Future LSIs2010

    • Author(s)
      J.Onuki, S.Tashiro, K.P.Khoo, N.Ishikawa, Y.Chonan, T.Kimura, H.Akahoshi
    • Journal Title

      J.Electrochem.Soc.

      Volume: 157

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Grain coarsening mechanism of Cu thin films by rapid annealing2010

    • Author(s)
      Y.Sasajima, J.Kageyama, K.P.Khoo, J Onuki
    • Journal Title

      Thin Solid Films

      Volume: 518 Pages: 6883-6890

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Impact of High Heating Rate, Low Temperature and Short Time Annealing on the Realization of Low Resistivity Cu Wire2010

    • Author(s)
      J.Onuki, K.Tamahashi, T.Namekawa, Y.Sasa jima
    • Journal Title

      Materials Transaction

      Volume: 51 Pages: 1715-1717

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Reduction in resistivity of 50nm wide Cu wire by high heating rate andshort time annealing utilizing misorientation energy2010

    • Author(s)
      J.Onuki, K.P.Khoo, Y.SasajimaY.Chonan, T.Kimura
    • Journal Title

      J.Appl.Phys.

      Volume: 108 Pages: 0443021-0443027

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Purification of CuC12 by anion-exchange separation using multi-column method2010

    • Author(s)
      M.Uchikoshi, Y.Yamada, Y.Baba, J.Onuki, K.Mimura, M.Isshiki
    • Journal Title

      High Temperature Materials and Processes

      Volume: 29 Pages: 469-481

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Texture investigation in the trench depth direction of very narrow copper wires less than 100nm wide using electron backscatter diffraction2010

    • Author(s)
      K.P.Khoo, 大貫仁
    • Journal Title

      Thin Solid Films 518

      Pages: 3413-3416

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Molecular dynamic simulation of grain growth of Cu film2010

    • Author(s)
      Takatoshi Kato, Takeshiro Nagai, Yasushi Sasajima, 大貫仁
    • Journal Title

      Material Transaction 51

      Pages: 664-669

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] MD Simulation of Void Generation during Annealing Process of Copper Wiring2009

    • Author(s)
      Takeshiro Nagai, Yasushi Sasajima, 大貫仁
    • Journal Title

      Materials Transactions 50

      Pages: 2373-2377

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Purification of Cu by hydrogen plasma-arc zone melting and characterization of trace impurities by secondary ion mass spectrometry2009

    • Author(s)
      G.M.Lalev, J.W.Lim, N.R.Munirathnmam, G.S.Choi, M.Uchikoshi, K.Mimura, M.Isshiki
    • Journal Title

      Materials Characterization 60

      Pages: 60-64

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Impurity behavior in Cu refined by Ar plasma-arc zone melting2009

    • Author(s)
      G.M.Lalev, J.-W.Lim, N.R.Munirathnam, G.-S.Choi, M.Uchikoshi, K.Mimura, M.Isshiki
    • Journal Title

      Metals and Materials International 15

      Pages: 753-757

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Concentration Behavior of Non-Metallic Impurities in Cu Rods Refined by Argon and Hydrogen Plasma-Arc Zone Melting2009

    • Author(s)
      G.M.Lalev, J.-W.Lim, N.R.Munirathnam, G.-S.Choi, M.Uchikoshi, K.Mimura, M.Isshiki
    • Journal Title

      Materials Transactions 50

      Pages: 618-621

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Cu超微細配線構造の安定性に及ぼす結晶方位の影響2008

    • Author(s)
      永井傑朗、赤羽智明、篠嶋妥、大貫仁
    • Journal Title

      日本金属学会誌 72

      Pages: 698-702

    • NAID

      10024273191

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Influence on the Electro-migration Resistance by Line Width and Average Grain Size along the Longitudinal Direction of Very Narrow Cu Wires

    • Author(s)
      K.P.Khoo, Suguru Tashiro, 大貫仁
    • Journal Title

      Material Transactions (印刷中)

    • NAID

      10027018498

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 三次元実装用貫通電極の高速めっき技術

    • Author(s)
      門田裕行、菅野龍一、伊藤雅彦、大貫仁
    • Journal Title

      エレクトロニクス実装学会誌 (印刷中)

    • NAID

      10026477725

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Void Generation during the annealing process of narrow copper wires

    • Author(s)
      Y. Sasajima, T. Akabane, T. Nagai, J. Onuki and Y. Chonan
    • Journal Title

      Journal of Applied Physics (印刷中)

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Presentation] 第52回谷川・ハリス賞受賞記念講演 環境対応高温半導体用独創的配線・実装材料の開発に関する研究2013

    • Author(s)
      大貫 仁
    • Organizer
      日本金属学会
    • Place of Presentation
      東京理科大学
    • Year and Date
      2013-03-27
    • Related Report
      2012 Final Research Report
  • [Presentation] LSI用微細Cu配線材料のナノ粒界評価技術2012

    • Author(s)
      大貫 仁
    • Organizer
      日本金属学会
    • Place of Presentation
      愛媛大学
    • Year and Date
      2012-09-18
    • Related Report
      2012 Final Research Report
  • [Presentation] 基調講演,高純度めっきプロセスにより形成した超微細Cu配線の結晶構造と抵抗率2012

    • Author(s)
      大貫仁
    • Organizer
      日本金属学会
    • Place of Presentation
      横浜国立大学(招待講演)
    • Year and Date
      2012-03-29
    • Related Report
      2011 Annual Research Report
  • [Presentation] Molecular dynamics simulation of grain growth of Cu film2011

    • Author(s)
      篠嶋妥
    • Organizer
      220th ECS (Electro Chemical Society) Meeting
    • Place of Presentation
      Boston, USA
    • Year and Date
      2011-10-12
    • Related Report
      2011 Annual Research Report
  • [Presentation] Invited Talk, Resistivity reduction for very narrow Cu wiring2011

    • Author(s)
      大貫仁
    • Organizer
      220th ECS (Electro Chemical Society) Meeting
    • Place of Presentation
      Boston, USA(招待講演)
    • Year and Date
      2011-10-11
    • Related Report
      2011 Annual Research Report
  • [Presentation] Evaluation of grain size distribution of Cu interconnects with less than 100nm width by X-ray diffraction method2011

    • Author(s)
      稲見隆
    • Organizer
      220th ECS (Electro Chemical Society) Meeting
    • Place of Presentation
      Boston, USA
    • Year and Date
      2011-10-11
    • Related Report
      2011 Annual Research Report
  • [Presentation] ナノ構造制御による次世代LSI用低抵抗率Cu配線の形成2010

    • Author(s)
      大貫仁
    • Organizer
      日本金属学会2010秋期大会
    • Place of Presentation
      北海道大学
    • Year and Date
      2010-09-26
    • Related Report
      2010 Self-evaluation Report
  • [Presentation] ナノ構造制御による次世代LSI用低抵抗率Cu配線の形成2010

    • Author(s)
      大貫仁
    • Organizer
      日本金属学会2010秋期大会
    • Place of Presentation
      北海道大学(基調講演)
    • Year and Date
      2010-09-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] LSI用めっきCu配線の微細構造と抵抗率2010

    • Author(s)
      大貫仁
    • Organizer
      ナノプレーテイング研究会(日本金属学会)
    • Place of Presentation
      慶応義塾大学
    • Year and Date
      2010-04-16
    • Related Report
      2010 Self-evaluation Report
  • [Presentation] (講演)LSI用めっきCu配線の微細構造と抵抗率2010

    • Author(s)
      大貫仁
    • Organizer
      ナノプレーテイング研究会(日本金属学会)
    • Place of Presentation
      慶応義塾大学日吉校舎
    • Year and Date
      2010-04-16
    • Related Report
      2009 Annual Research Report
  • [Presentation] 半導体集積回路の性能向上のための計算機シミュレーション2009

    • Author(s)
      篠嶋妥
    • Organizer
      日本金属学会2009年秋期大会
    • Place of Presentation
      京都大学
    • Year and Date
      2009-09-28
    • Related Report
      2010 Self-evaluation Report
  • [Presentation] (基調講演)半導体集積回路の性能向上のための計算機シミュレーション2009

    • Author(s)
      篠嶋妥
    • Organizer
      日本金属学会2009年秋期大会
    • Place of Presentation
      京都大学
    • Year and Date
      2009-09-28
    • Related Report
      2009 Annual Research Report
  • [Presentation] Void Generation during Annealing Process of Very Narrow Copper Wires2008

    • Author(s)
      Y. Sasajimal, T. Akabane, T. Nagai, Y Chonan and J. Onuki
    • Organizer
      The IUMRS International Conference in Asia 2008
    • Place of Presentation
      Nagoya
    • Related Report
      2008 Annual Research Report
  • [Presentation] 第52回谷川・ハリス賞受賞記念講演 環境対応高温半導体用独創的配線・実装材料の開発に関する研究

    • Author(s)
      大貫 仁
    • Organizer
      日本金属学会
    • Place of Presentation
      東京理科大学
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] LSI用微細Cu配線材料のナノ粒界評価技術

    • Author(s)
      大貫 仁
    • Organizer
      日本金属学会
    • Place of Presentation
      愛媛大学
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Remarks] 新聞発表2件(日刊工業新聞)

    • Related Report
      2012 Final Research Report
  • [Remarks] 解説記事2件

    • Related Report
      2012 Final Research Report
  • [Remarks] 新聞掲載 2010年12月1日 日刊工業新聞掲載、題目:超高速LSI用低抵抗率Cu配線材料の研究

    • Related Report
      2010 Self-evaluation Report
  • [Remarks]

    • URL

      http://info.ibaraki.ac.jp/scripts/websearch/index.htm

    • Related Report
      2009 Annual Research Report
  • [Remarks]

    • URL

      http://info.ibaraki.ac.jp/scripts/websearch/index.html

    • Related Report
      2008 Annual Research Report
  • [Patent(Industrial Property Rights)] 半導体集積回路装置及びその製造方法並びに該半導体集積回路装置に使用する低抵抗率銅配線の探索方法2013

    • Inventor(s)
      大貫, 篠嶋, 永野, 玉橋, 千葉
    • Industrial Property Rights Holder
      茨城大学
    • Industrial Property Number
      2013-101708
    • Filing Date
      2013-05-13
    • Related Report
      2012 Final Research Report
  • [Patent(Industrial Property Rights)] 半導体集積回路装置及びその製造方法並びに該半導体集積回路装置に使用する低抵抗率銅配線の探索方法2013

    • Inventor(s)
      大貫、篠嶋、永野、玉橋、千葉
    • Industrial Property Rights Holder
      大貫、篠嶋、永野、玉橋、千葉
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-101708
    • Filing Date
      2013-05-13
    • Related Report
      2012 Annual Research Report
  • [Patent(Industrial Property Rights)] 金属層の結晶粒径及び粒径分布評価方法並びにそれを用いた半導体集積回路装置の製造方法2011

    • Inventor(s)
      稲見隆、大貫仁
    • Industrial Property Rights Holder
      国立大学法人茨城大学
    • Industrial Property Number
      2011-022414
    • Filing Date
      2011-02-04
    • Related Report
      2010 Annual Research Report 2010 Self-evaluation Report
  • [Patent(Industrial Property Rights)] 半導体集積回路装置用バリア材の探索方法2011

    • Inventor(s)
      篠嶋妥、大貫仁、永野隆敏、玉橋邦裕
    • Industrial Property Rights Holder
      国立大学法人茨城大学
    • Industrial Property Number
      2011-030514
    • Filing Date
      2011-02-16
    • Related Report
      2010 Annual Research Report
  • [Patent(Industrial Property Rights)] 半導体集積回路装置用ルテニウムバリア膜とその作成方法及び該ルテニウムバリア膜を有する半導体集積回路装置とその製2011

    • Inventor(s)
      永野隆敏、大貫仁、篠嶋妥、玉橋邦裕
    • Industrial Property Rights Holder
      国立大学法人茨城大学
    • Industrial Property Number
      2011-033019
    • Filing Date
      2011-02-18
    • Related Report
      2010 Annual Research Report
  • [Patent(Industrial Property Rights)] 半導体装置、半導体装置用基板および該基板の製造方法2011

    • Inventor(s)
      門田裕行、菅野龍一、佐藤明、大貫仁
    • Industrial Property Rights Holder
      日立協和エンジニア(株)、国立大学法人茨城大学
    • Industrial Property Number
      2011-067619
    • Filing Date
      2011-03-25
    • Related Report
      2010 Annual Research Report
  • [Patent(Industrial Property Rights)] 特許出願(発明の名称)半導体集積回路装置及びその製造方法2009

    • Inventor(s)
      篠嶋妥、大貫仁、田代優、KyooKhyou Pin
    • Industrial Property Rights Holder
      茨城大学
    • Filing Date
      2009-12-03
    • Related Report
      2009 Annual Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] 半導体集積回路装置及びその製造方法2008

    • Inventor(s)
      篠嶋妥、大貫仁
    • Industrial Property Rights Holder
      国立大学法人茨城大学
    • Filing Date
      2008-12-04
    • Related Report
      2010 Self-evaluation Report
    • Overseas
  • [Patent(Industrial Property Rights)] 半導体集積回路およびその製造方法2008

    • Inventor(s)
      篠嶋、大貫、田代、K. P. Khoo
    • Industrial Property Rights Holder
      茨城大
    • Industrial Property Number
      2008-309890
    • Filing Date
      2008-12-04
    • Related Report
      2008 Annual Research Report

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Published: 2008-04-01   Modified: 2019-07-29  

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