| Budget Amount *help |
¥48,360,000 (Direct Cost: ¥37,200,000、Indirect Cost: ¥11,160,000)
Fiscal Year 2011: ¥7,540,000 (Direct Cost: ¥5,800,000、Indirect Cost: ¥1,740,000)
Fiscal Year 2010: ¥12,090,000 (Direct Cost: ¥9,300,000、Indirect Cost: ¥2,790,000)
Fiscal Year 2009: ¥11,830,000 (Direct Cost: ¥9,100,000、Indirect Cost: ¥2,730,000)
Fiscal Year 2008: ¥16,900,000 (Direct Cost: ¥13,000,000、Indirect Cost: ¥3,900,000)
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| Research Abstract |
In this project, we aim at the realization of technologies that enable us to manipulate single charges and spins, by using a true atom, or, dopant in silicon, rather than by using an artificial atoms, or quantum dots. Here, we established the way of identifying the position of individual dopants in a transistor and also clarified how each dopant had an impact on the transistor characteristics. In addition, we realized the "atom device" that controls motion of single charges by using a dopant embedded in silicon.
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