High performance organic field effect transistors using polydiactyelene solid-state polymerized films
Project/Area Number |
20245046
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Research Category |
Grant-in-Aid for Scientific Research (A)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Polymer/Textile materials
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Research Institution | Kyushu University |
Principal Investigator |
ADACHI Chihaya Kyushu University, 工学研究院, 教授 (30283245)
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Co-Investigator(Kenkyū-buntansha) |
YAHIRO Masayuki 九州大学, 未来化学創造センター, 助教 (40432877)
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Project Period (FY) |
2008 – 2010
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Project Status |
Completed (Fiscal Year 2010)
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Budget Amount *help |
¥40,430,000 (Direct Cost: ¥31,100,000、Indirect Cost: ¥9,330,000)
Fiscal Year 2010: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2009: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2008: ¥32,370,000 (Direct Cost: ¥24,900,000、Indirect Cost: ¥7,470,000)
|
Keywords | 有機FET / ポリジアセチレン / 移動度 / 固相重合 / LB膜 / 高速電子移動度 / 電子線照射 / ドーピング / 発光デバイス / Ambipolar / 高速移動度 / 真空蒸着 / レーザアニール |
Research Abstract |
The highest carrier mobility of polydiacetylene (PDA) thin films in field-effect transistors has been limited to less than 0.8cm^2 V-1 s-1, although the main chain conduction should show higher carrier mobility potentially. We revealed that the cause of the low carrier mobility is due to the presence of local upheaval regions generated by the volume change through the polymerization process of diacetylene monomers. In order to suppress the occurrence of the upheaval regions, we found that electron beam (EB) irradiation is effective, resulted in the highest carrier mobility of μmax=3.8cm^2V-1 s-1.
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Report
(4 results)
Research Products
(33 results)
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[Journal Article] A high mobility ambipolar field effect transistor using a 2,6-diphenylbenzo[1,2-b:4,5-b']diselenophene/fullerene double layer2008
Author(s)
S.Kinoshita, T.Sakanoue, M.Yahiro, K.Takimiya, H.Ebata, M.Ikeda, H.Kuwabara, C.Adachi
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Journal Title
Solid State Comm. 145
Pages: 114-117
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[Patent(Industrial Property Rights)] 有機半導体素子及び有機電極2011
Inventor(s)
Takuji Kato, Satoshi Yamamoto, Toshiya Sagisaka, Takanori Tano, Masato Shinoda, Daisuke Goto, Shinji Matsumoto, Masataka Mohri, Keiichiro Yutani, Chihaya Adachi, Masafumi Torii
Industrial Property Rights Holder
株式会社リコー九州大学
Filing Date
2011-03-01
Related Report
Overseas