| Budget Amount *help |
¥50,050,000 (Direct Cost: ¥38,500,000、Indirect Cost: ¥11,550,000)
Fiscal Year 2010: ¥14,430,000 (Direct Cost: ¥11,100,000、Indirect Cost: ¥3,330,000)
Fiscal Year 2009: ¥17,810,000 (Direct Cost: ¥13,700,000、Indirect Cost: ¥4,110,000)
Fiscal Year 2008: ¥17,810,000 (Direct Cost: ¥13,700,000、Indirect Cost: ¥4,110,000)
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| Research Abstract |
We have developed a method of low temperature formation by use of nitric acid oxidation method. 3C-SiC surfaces can be atomically flattened by hydrogen treatment at 400℃, and SiO_2/SiC structure with good electrical characteristics can be formed by two-step nitric acid oxidation method using 40 and 68wt% HNO_3 solutions below 120℃. The leakage current density flowing through SiO_2 is high with no hydrogen treatment, but it can be decreased by approximately six orders of magnitude using the hydrogen treatment. We have also fabricated SiO_2/4H-SiC structure by use of nitric acid vapor oxidation method at 600℃. The oxidation proceeds only from step edges, and the initial oxidation rate for C-face is 2.8 times higher than that for Si-face. For the Si-face, SiOC species is formed at the interface, while it is not present for the C-face.
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