Laser Crystallization of non two-dimensional Si substrates and their device application

• Project/Area Number: 20246006
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Nara Institute of Science and Technology
• Principal Investigator: URAOKA Yukiharu Nara Institute of Science and Technology, 物質創成科学研究科, 教授 (20314536)
• Co-Investigator(Kenkyū-buntansha): KIMURA Mutsumi 龍谷大学, 理工学部, 教授 (60368032)
• Co-Investigator(Renkei-kenkyūsha): FUYUKI Takashi 奈良先端科学技術大学院大学, 物質創成科学研究科, 教授 (10165459) ; HATAYAMA Tomoaki 奈良先端科学技術大学院大学, 物質創成科学研究科, 助教 (90304162) ; YANO Hiroshi 奈良先端科学技術大学院大学, 物質創成科学研究科, 教授 (40335485)
• Project Period (FY): 2008 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥32,760,000 (Direct Cost: ¥25,200,000、Indirect Cost: ¥7,560,000); Fiscal Year 2010: ¥9,230,000 (Direct Cost: ¥7,100,000、Indirect Cost: ¥2,130,000); Fiscal Year 2009: ¥10,400,000 (Direct Cost: ¥8,000,000、Indirect Cost: ¥2,400,000); Fiscal Year 2008: ¥13,130,000 (Direct Cost: ¥10,100,000、Indirect Cost: ¥3,030,000)
• Keywords: レーザ結晶化 / 薄膜トランジスタ / 薄膜フォトダイオード / 三次元デバイス / ディスプレイ / 多結晶シリコン / 非二次元基板 / フォトダイオード / グリーンレーザ / 三次元素子 / 多結晶 / ファイバー / 積層シリコン薄膜

Research Abstract

We crystallized one dimensional or three dimensional silicon thin film and applied this method to the fabrication of thin film transistors or thin film photo diodes. We demonstrated the effectiveness of this technique by operating high functional devices. This method is promising for the realization of next generation information devices.

Research Products

• [Journal Article] Thin-Film Transistor Type Flash Memory with Biomineralized Co Nanodots on Silicon-on-Insulator (2010)
  • Author(s): K.Ohara, I.Yamashita, Y.Uraoka
  • Journal Title: Japanese Journal of Applied Physics 49
  • NAID: 210000068323
  • Peer Reviewed
• [Journal Article] Crystallization of an Amorphous Si Thin Film by Using Pulsed Rapid Thermal Annealing with Ni-Ferritin (2010)
  • Author(s): K.Yamasaki, M.Ochi, Y.Sugawara, I.Yamashita, Y.Uraoka
  • Journal Title: Jounal of the Korean Physical Society 56 Pages: 842-842
  • Peer Reviewed
• [Journal Article] Construction of a ferritin dimer by breaking its symmetry (2010)
  • Author(s): B.Zheng, M.Uenuma, Y.Uraoka, I.Yamashita
  • Journal Title: Nanotechnology 21 Pages: 445602-445602
  • Peer Reviewed
• [Journal Article] Static and dynamic observation of supermolecular protein, ferritin using high-speed atomic force microscope (2010)
  • Author(s): S.Yamamoto, T.Okada, Y.Uraoka, I.Yamashita, S.Hasegawa
  • Journal Title: Journal of Applied Physics 109 Pages: 34901-34901
  • Peer Reviewed
• [Journal Article] Crystallization by Green-laser Annealing for Three-dimensional Device Application (2010)
  • Author(s): Y.Kawamura, K.Yamasaki, T.Yamashita, Y.Sugawara, Y.Uraoka
  • Journal Title: Journal of the Korean Physical Society 56 Pages: 1456-1456
  • Peer Reviewed
• [Journal Article] Annealing and Composition Effects of (Ba_xSr_1-x) Ta_2O_6 Thin Films Fabricated by Sol-Gel Method (2010)
  • Author(s): L.Lu, T.Nishida, M.Echizen, K.Uchiyama, Y.Uraoka
  • Journal Title: Japanese Journal of Applied Physics 49
  • Peer Reviewed
• [Journal Article] Effect of post thermal annealing of ZnO-TFTs by atomic layer deposition (2010)
  • Author(s): Y.Kawamura, M.Horita, Y.Uraoka
  • Journal Title: Japanese Journal of Applied Physics 49
  • Peer Reviewed
• [Journal Article] Site-directed delivery of ferritin- encapsulated fold nanoparticles (2010)
  • Author(s): N.Zhen, I.Yamashita, M.Uenuma, K.Iwahori, M.Kobayashi, Y.Uraoka
  • Journal Title: Nanotechnology 21 Pages: 45305-45305
  • Peer Reviewed
• [Journal Article] Thin-Film Transistor Type Flash Memory with Biomineralized Co Nanodots on Silicon-on-Insulator (2010)
  • Author(s): K.Ohara, I.Yamashita, Y.Uraoka
  • Journal Title: Japanese Journal of Applied Physics Volume: 49
  • NAID: 210000068323
  • Peer Reviewed
• [Journal Article] Crystallization of an Amorphous Si Thin Film by Using Pulsed Rapid Thermal Annealing with Ni-Ferritin (2010)
  • Author(s): K.Yamasaki, M.Ochi, Y.Sugawara, I.Yamashita, Y.Uraoka
  • Journal Title: Journal of the Korean Physical Society Volume: 56 Pages: 842-842
  • Peer Reviewed
• [Journal Article] Annealing and Composition Effects of (Ba_xSr_<1-x>)Ta_2O_6 Thin Films Fabricated by Sol-Gel Method (2010)
  • Author(s): L.Lu, T.Nishida, M.Echizen, K.Uchiyama, Y.Uraoka
  • Journal Title: Japanese Journal of Applied Physics Volume: 49
  • Peer Reviewed
• [Journal Article] Construction of a ferritin dimer by breaking its symmetry (2010)
  • Author(s): B.Zheng, M.Uenuma, Y.Uraoka, I.Yamashita
  • Journal Title: Nanotechnology Volume: 21 Pages: 445602-445602
  • Peer Reviewed
• [Journal Article] Static and dynamic observation of supermolecular protein, ferritin using high-speed atomic force microscope (2010)
  • Author(s): S.Yamamoto, T.Okada, Y.Uraoka, I.yamashita, S.Hasegawa
  • Journal Title: Journal of Applied Physics Volume: 109 Pages: 34901-34901
  • Peer Reviewed
• [Journal Article] Crystallization by Green-laser Annealing for Three-dimensional Device Application (2010)
  • Author(s): Y.Kawamura, K.Yamasaki, T.Yamashita, Y.Sugawara, Y.Uraoka
  • Journal Title: Journal of the Korean Physical Society Volume: 56 Pages: 1456-1456
  • Peer Reviewed
• [Journal Article] Effect of post thermal annealing of ZnO-TFTs by atomic layer deposition (2010)
  • Author(s): Y.Kawamura, M.Horita, Y.Uraoka
  • Journal Title: Jpn.J.Appl.Phys 49
  • Peer Reviewed
• [Journal Article] Site-directed delivery of ferritin-encapsulated fold nanoparticles (2010)
  • Author(s): N Zhen, I.Yamashita, M.Uenuma, K.Iwahori, M.Koayashi, Y.Uraoka
  • Journal Title: Nanotechnoligy 21 Pages: 45305-45305
  • Peer Reviewed
• [Journal Article] Characterization of local electrical properties of polycrystalline silicon thin films and hydrogen termination effect by conductive atomic force microscopy (2009)
  • Author(s): E.Machida, Y.Uraoka, T.Fuyuki, R.Kokawa,T.Ito, H.Ikenoue
  • Journal Title: Applied Physics Letters 94
  • Peer Reviewed
• [Journal Article] Floating gate memory with biomineralized nanodots embedded in High-k gate dielectric (2009)
  • Author(s): K.Ohara, I.Yamashita, T.Yaegashi, M.Moniwa, H.Yoshimaru, Y.Uraoka
  • Journal Title: Applied Physics Express 2
  • NAID: 10025517826
  • Peer Reviewed
• [Journal Article] Irradiatio-damages in atmospheric plasma used in a resist ashing process for thin film transitors (2009)
  • Author(s): T.Sato, A.Ueno, T.Yara, E.Miyamoto, Y.Uraoka, T.Kubota, S.Samukawa
  • Journal Title: Japanese Journal of Applied Physics 48
  • Peer Reviewed
• [Journal Article] Experimental and Theoretical Analysis of Degradation in Ga2O3-In2O3-ZnO Thin-Film Transistors (2009)
  • Author(s): M.Fujii, Y.Uraoka, T.Fuyuki, J.S.Jung, J.Y.Kwon
  • Journal Title: Japanese Journal of Applied Physics 4488
  • NAID: 210000066602
  • Peer Reviewed
• [Journal Article] Characterization of local electrical properties of polycrystalline silicon thin films and hydrogen termination effect by conductive atomic force microscopy (2009)
  • Author(s): Emi Machida, Yukiharu Uraoka, Takashi Fuyuki, Ryohei Kokawa, Takeshi Ito, Hiroshi Ikenoue
  • Journal Title: APPLIED PHYSICS LETTERS 94 Pages: 1821041-3
  • Peer Reviewed
• [Journal Article] Floating Gate Memory Based on Ferritin Nanodots with High-k Gate Dielectrics (2009)
  • Author(s): K.Ohara, Y.Uraoka, T.Fuyuki, I.Yamashita, T.Yaegashi, M.Moniwa, M.Yoshimaru
  • Journal Title: Jpn.J.Appl.Phys 48
  • NAID: 210000066664
  • Peer Reviewed
• [Journal Article] Irradiatio-damages in atmospheric plasma used in a resist ashing process for thin film transitors (2009)
  • Author(s): T.Sato, A.Ueno, T.Yara, E.Miyamoto, Y.Uraoka, T.Kubota, S.Samukawa
  • Journal Title: Jpn.J.Appl.Phys 48
  • Peer Reviewed
• [Journal Article] Experimental and Theoretical Analysis of Degradation in Ga2O3-In2O3-ZnO Thin-Film Transistors (2009)
  • Author(s): M.Fujii, Y.Uraoka, T.Fuyuki, J.S.Jung, J.Y.Kwon
  • Journal Title: Jpn.J.Appl.Phys 48
  • NAID: 210000066602
  • Peer Reviewed
• [Journal Article] Controlled Reduction of Bionanodots for Better Charge Strage Characteristics of Bionanodots Flash Mmeory (2009)
  • Author(s): Y.Tojo, A.Miura, Y.Uraoka, T.fuyuki, I.Yamashita
  • Journal Title: Jpn.J.Appl.Phys 48
  • Peer Reviewed
• [Journal Article] Floating nanodot gate memory fabrication with biomineralized nanodot as charge storage node (2008)
  • Author(s): A.Miura, Y.Uraoka, T.Fuyuki, S.Kumagai, S.Yoshii, N.Matsukawa, I.Yamashita
  • Journal Title: Journal of Applied Physics Vol.103
  • Peer Reviewed
• [Journal Article] Thermal analysis of degradation in Ga_2O_3-In_2O_3-ZnO thin film transistors (2008)
  • Author(s): M.Fujii, H.Yano, T.Hatayama, Y.Uraoka, T.Fuyuki, J.Sim Jung, J.Yeon Kwon
  • Journal Title: Japanese Journal of Applied Physics Vol.47 Pages: 6236-6240
  • Peer Reviewed
• [Journal Article] Fabrication of Pol-Si films by continuous local thermal chemical vapor deposition on flexible quartz glass substrate (2008)
  • Author(s): T.Nakamura, H.Kuraseko, K.Hanazawa, H.Koaizawa, Y.Uraoka, T.Fuyuki, A.Mimura
  • Journal Title: Applied Physics Letters 93
  • Peer Reviewed
• [Journal Article] Non-volatile flash memory with discrete bionanodt floating gate assembled by protein template (2008)
  • Author(s): A.Miura, R.Tsukamoto, S.Yoshii, I.Yamashita, Y.Uraoka, T.Fuyuki
  • Journal Title: Applied Physics Letters 19
  • Peer Reviewed
• [Journal Article] Surface Potential Evaluations of Ferritin Nanodots by Kelvin Force Microscopy (2008)
  • Author(s): S.Yamamoto, K.Kobayashi, H.Yamada, H.Yoshioka, Y.Uraoka, T.Fuyuki, M.Okuda, I.Yamashita
  • Journal Title: Journal of Scann Pobe Microscope 3 Pages: 1-6
  • Peer Reviewed
• [Journal Article] Floating nanodot gate memory fabrication with biomineralized nanodot as charge storage node (2008)
  • Author(s): A. Miura
  • Journal Title: Journal of Applied Physics Vol. 103
  • Peer Reviewed
• [Journal Article] Thermal analysis of degradation in Ga_2O_3-In_2O_3-ZnO thin film transistors (2008)
  • Author(s): M. Fujii
  • Journal Title: Japanese Journal of Applied Physics Vol. 47 Pages: 6236-6240
  • Peer Reviewed
• [Journal Article] Fabrication of Pol-Si films by continuous local thermal chemical vapor deposition on flexible quartz glass substrate (2008)
  • Author(s): T. Nakamura
  • Journal Title: Appl. Phys. Lett. 93
  • Peer Reviewed
• [Journal Article] Non-volatile flash memory with discrete bionanodt floating gate assembled by protein template (2008)
  • Author(s): A. Miura
  • Journal Title: Nanotechnology 19
  • Peer Reviewed
• [Journal Article] Surface Potential Evaluations of Ferri tin Nanodots by Kelvin Force Microscopy (2008)
  • Author(s): S. Yamamoto
  • Journal Title: Journal of Scann Pobe Microscope 3 Pages: 1-6
  • Peer Reviewed
• [Presentation] Three Dimensional Floating Gate Memory with Multi-layered Nanodot Array Formed by Bio-LBL (2010)
  • Author(s): K.Ohara, B.Zheng, M.Uenuma, I.Yamashita, Y.Uraoka
  • Organizer: International Conference on Solid State Devices and Materials
  • Place of Presentation: Tokyo
  • Year and Date: 2010-09-22
• [Presentation] ZnO thin film fabricated by plasma assisted atomic layer deposition (2010)
  • Author(s): Y.Kawamura, Y.Uraoka
  • Organizer: International Conference on Solid State Devices and Materials
  • Place of Presentation: Tokyo
  • Year and Date: 2010-09-22
• [Presentation] The Unique Phenomenon in the Amorphous In2O3-Ga2O3-ZnO TFTs Degradation under the Dynamic Stress (2010)
  • Author(s): M.Fujii, J.S.Jung, J.Y.Kwon, Y.Uraoka
  • Organizer: International Conference on Solid State Devices and Materials
  • Place of Presentation: Tokyo
  • Year and Date: 2010-09-22
• [Presentation] Positional control of crystal grains in silicon thin film utilizing cage shaped protein (2010)
  • Author(s): Y.Tojo, A.Miura, I.Yamashita, Y.Uraoka
  • Organizer: International Conference on Solid State Devices and Materials
  • Place of Presentation: Tokyo
  • Year and Date: 2010-09-22
• [Presentation] Three Dimensional Floating Gate Memory with Multi-layered Nanodot Array Formed by Bio-LBL (2010)
  • Author(s): K.Ohara, B.Zheng, M.Uenuma, I.Yamashita, Y.Uraoka
  • Organizer: International Conference on Solid State Devices and Materials
  • Place of Presentation: Bunkyo, Tokyo
  • Year and Date: 2010-09-22
• [Presentation] ZnO thin film fabricated by plasma assisted atomic layer deposition (2010)
  • Author(s): Y.Kawamura, Y.Uraoka
  • Organizer: International Conference on Solid State Devices and Materials
  • Place of Presentation: Bunkyo, Tokyo
  • Year and Date: 2010-09-22
• [Presentation] The Unique Phenomenon in the Amorphous In2O3-Ga2O3-ZnO TFTs Degradation under the Dynamic Stress (2010)
  • Author(s): M.Fujii, J.S.Jung, J.Y.Kwon, Y.Uraoka
  • Organizer: International Conference on Solid State Devices and Materials
  • Place of Presentation: Bunkyo, Tokyo
  • Year and Date: 2010-09-22
• [Presentation] Positional control of crystal grains in silicon thin film utilizing cage shaped protein (2010)
  • Author(s): Y.Tojo, A.Miura, I.Yamashita, Y.Uraoka
  • Organizer: International Conference on Solid State Devices and Materials
  • Place of Presentation: Bunkyo, Tokyo
  • Year and Date: 2010-09-22
• [Presentation] Improement of the Optical Property of ZnS-based Inorganic EL Phosphors by Microwave Sintering (2010)
  • Author(s): Y.Kobayashi, S.Horiguchi, N.taguchi, M.Susaki, M.Horita, Y.Uraoka
  • Organizer: The Seventeen International workshop on Active-matrix Flatpanel Displays and Devices
  • Place of Presentation: Tokyo
  • Year and Date: 2010-07-05
• [Presentation] Improement of the Optical Property of ZnS-based Inorganic EL Phosphors by Microwave Sintering (2010)
  • Author(s): Y.Kobayashi, S.Horiguchi, N.taguchi, M.Susaki, M.Horita, Y.Uraoka
  • Organizer: The Seventeen International workshop on Active-matrix Flatpanel Displays and Devices
  • Place of Presentation: Meguro, Tokyo
  • Year and Date: 2010-07-05
• [Presentation] Delivery of ferritin-encapsulated gold nanoparticles on disordered surface (2010)
  • Author(s): B.Zheng, M.Uenuma, I.Yamashita, Y.Uraoka
  • Organizer: International Symposium on Technology Evolution for Silicon Nano-Electronics
  • Place of Presentation: Tokyo
  • Year and Date: 2010-06-03
• [Presentation] Delivery of ferritin-encapsulated gold nanoparticles on disordered surface (2010)
  • Author(s): B.Zheng, M.Uenuma, I.Yamashita, Y.Uraoka
  • Organizer: International Symposium on Technology Evlution for Silicon Nano-Electronics
  • Place of Presentation: Meguro, Tokyo
  • Year and Date: 2010-06-03
• [Presentation] Location Controls of Crystallization Areas Utilizing Nickel Ferritins (2010)
  • Author(s): Y.Tojo, A.Miura, Y.Uraoka, T.fuyuki, I.Yamashita
  • Organizer: International Thin-Film Transistor Conference 2010
  • Place of Presentation: Hyogo
  • Year and Date: 2010-01-28
• [Presentation] Silicon Thin Film Transistor on Quartz Fiber (2010)
  • Author(s): Y.Sugawara, K.Yamazaki, T.Nakamura, H.Koaizawa, A.Mimura, K.Suzuki, Y.Uraoka
  • Organizer: International Thin-Film Transistor Conference 2010
  • Place of Presentation: Hyogo
  • Year and Date: 2010-01-28
• [Presentation] Scanning Probe Microscope Analysis for Electron Trapping and Detrapping in Defect Sites of Polycrystalline Silicon Thin Films (2010)
  • Author(s): E.Machida, Y.Uraoka, H.Ikenoue
  • Organizer: International Thin-Film Transistor Conference 2010
  • Place of Presentation: Hyogo
  • Year and Date: 2010-01-28
• [Presentation] Location Controls of Crystallization Areas Utilizing Nickel Ferritins (2010)
  • Author(s): Y.Tojo, A.Miura, I.Yamashita, Y.Uraoka
  • Organizer: International Thin-Film Transistor Conference 2010
  • Place of Presentation: Himeji, Hyogo
  • Year and Date: 2010-01-28
• [Presentation] Silicon Thin Film Transistor on Quartz Fiber (2010)
  • Author(s): Y.Sugawara, K.Yamazaki, T.Nakamura, H.Koaizawa, A.Mimura, K.Suzuki, Y.Uraoka
  • Organizer: International Thin-Film Transistor Conference 2010
  • Place of Presentation: Himeji, Hyogo
  • Year and Date: 2010-01-28
• [Presentation] Scanning Probe Microscope Analysis for Electron Trapping and Detrapping in Defect Sites of Polycrystalline Silicon Thin Films (2010)
  • Author(s): E.Machida, Y.Uraoka, H.Ikenoue
  • Organizer: International Thin-Film Transistor Conference 2010
  • Place of Presentation: Himeji, Hyogo
  • Year and Date: 2010-01-28
• [Presentation] TFT-type Flash Memory with Biomineralized Nanodots on SOI Substrate (2009)
  • Author(s): K.Ohara, I.Yamashita, Y.Uraoka
  • Organizer: International Conference on Solid State Devices and Materials
  • Place of Presentation: Sendai, Miyagi
  • Year and Date: 2009-11-08
• [Presentation] TFT-type Flash Memory with Biomineralized Nanodots on SOI Substrate (2009)
  • Author(s): K.Ohara, I.Yamashita, Y.Uraoka
  • Organizer: International Conference on Solid State Devices and Materials
  • Place of Presentation: Miyagi
  • Year and Date: 2009-10-08
• [Presentation] Three-Dimensional Device Fabricated with Green Laser (2009)
  • Author(s): T.Yamashita, Y.Sugawara, Y.Uraoka
  • Organizer: AMFPD '09
  • Place of Presentation: Nara
  • Year and Date: 2009-07-01
• [Presentation] Three-Dimensional Device Fabricated with Green Laser (2009)
  • Author(s): Takehiko Yamashita, Yuta Sugawara, Yukiharu Uraoka
  • Organizer: AMFPD '09
  • Place of Presentation: Nara, Japan
  • Year and Date: 2009-07-01
• [Presentation] Green Laser Anneling Crystallization for Three-Dimensional Device Application (2009)
  • Author(s): T.Yamashita, Y.Sugawara, Y.Uraoka, T.Fuyuki, M.Kimura
  • Organizer: International Meeting for Future of Electron Devices, Kansai
  • Place of Presentation: Osaka
  • Year and Date: 2009-05-14
• [Presentation] Conductivity and Surface Potential Measurements in Poly-Si Thin Films by Scaning Probe Microscopy (2009)
  • Author(s): E.Machida, Y.Uraoka, R.Kokawa, T.Ito, H.Ikenoue
  • Organizer: International Meeting for Future of Electron Devices, Kansai
  • Place of Presentation: Osaka
  • Year and Date: 2009-05-14
• [Presentation] Green Laser Anneling Crystallization for Three-Dimensional Device Application (2009)
  • Author(s): T.Yamashita, Y.Sugawara, Y.Uraoka, T.Fuyuki, M.Kimura
  • Organizer: International Meeting for Future of Electron Devices, Kansai
  • Place of Presentation: Osaka, Japan
  • Year and Date: 2009-05-14
• [Presentation] Conductivity and Surface Potential Measurements in Poly-Si Thin Films by Scaning Probe Microscopy (2009)
  • Author(s): E.Machida, Y.Uraoka, R.Kokawa, T.Ito, H.Ikenoue
  • Organizer: International Meeting for Future of Electr on Devices, Kansai
  • Place of Presentation: Osaka, Japan
  • Year and Date: 2009-05-14
• [Presentation] Pulsed Green Laser Anneling Crystallization of Double-Layered Silicon Thin Films (2009)
  • Author(s): Y. Sugawara, H. Yano, T, Hatayama, Y. Uraoka, T. Fuyuki
  • Organizer: The 5^<th> International TFT Conference
  • Place of Presentation: Paris, France
  • Year and Date: 2009-05-03
• [Presentation] Green Laser Anneling Crystallization for Three-Dimensional device Application (2009)
  • Author(s): T. Yamashita, Y. Sugawara, Y. Uraoka, T. Fuyuki, M. Kimura
  • Organizer: The 5^<th> International TFT Conference
  • Place of Presentation: Paris, France
  • Year and Date: 2009-03-05
• [Presentation] Conductive-AFM Measurements of Poly-Si Thin Film Formed by ELA (2009)
  • Author(s): E. Machida, Y. Uraoka, T. Fuyuki, R. Kokawa. T. Itoh, H. Ikenoue
  • Organizer: The 5^<th> International TFT Conference
  • Place of Presentation: Paris, France
  • Year and Date: 2009-03-05
• [Presentation] Floating Gate Memory Based on Ferritin Nanodots with High-K Gate Dielectrics (2009)
  • Author(s): K. Ohara. Y. Uraoka, T. fuyuki, I. Yamashita, T. Yaegashi, M. Moniwa, M. Yoshimaru
  • Organizer: The 5^<th> International TFT Conference
  • Place of Presentation: Paris, France
  • Year and Date: 2009-03-05
• [Presentation] Experimental and Theoretical Analysis of In203-Ga203-Zn0 Thin Film Transistors under Constant VoItage Stress (2009)
  • Author(s): M. Fujii, Y. Uraoka, T. Fuyuki, J. Jun, J. Kwon
  • Organizer: The 5^<th> International TFT Conference
  • Place of Presentation: Paris, France
  • Year and Date: 2009-03-05
• [Presentation] Green Laser Anneling Crystallization for Three-Dimensional device Application (2008)
  • Author(s): T.Yamashita, Y.Sugawara, Y.Uraoka, T.Fuyuki, M.Kimura
  • Organizer: The 5^<th> International TFT Conference
  • Place of Presentation: Paris, France
  • Year and Date: 2008-03-05
• [Presentation] Conductive-AFM Measurements of Poly-Si Thin Film Formed by ELA (2008)
  • Author(s): E.Machida, Y.Uraoka, T.Fuyuki, R.Kokawa, T.Itoh, H.Ikenoue
  • Organizer: The 5th International TFT Conference
  • Place of Presentation: Paris, France
  • Year and Date: 2008-03-05
• [Presentation] Floating Gate Memory Based on Ferritin Nanodots with High-K Gate Dielectrics (2008)
  • Author(s): K.Ohara, Y.Uraoka, T.Fuyuki, I.Yamashita, T.Yaegashi, M.Moniwa, M.Yoshimaru
  • Organizer: The 5^<th> International TFT Conference
  • Place of Presentation: Paris, France
  • Year and Date: 2008-03-05
• [Presentation] Pulsed Green Laser Anneling Crystallization of Double-Layered Silicon Thin Films (2008)
  • Author(s): Y.Sugawara, H.Yano, T.Hatayama, Y.Uraoka, T.Fuyuki
  • Organizer: The 5^<th> International TFT Conference
  • Place of Presentation: Paris, France
  • Year and Date: 2008-03-05
• [Presentation] Experimental and Theoretical Analysis of In2O3-Ga2O3-ZnO Thin Film Transistors under Constant Voltage Stress (2008)
  • Author(s): M.Fujii, Y.Uraoka, T.Fuyuki, J.Jun, J.Kwon
  • Organizer: The 5^<th> International TFT Conference
  • Place of Presentation: Paris, France
  • Year and Date: 2008-03-05
• [Book] 薄膜トランジスタ(薄膜材料デバイス研究会) (2008)
  • Author(s): 浦岡行治(共著)
  • Total Pages: 229
  • Publisher: コロナ社
• [Book] 薄膜トランジスタ (2008)
  • Author(s): 浦岡行治(共著), 薄膜材料デバイス研究会
  • Total Pages: 229
  • Publisher: コロナ社
• [Remarks] ホームページ等
  • URL: http://mswebs.naist.jp/LABs/uraoka/index.html
• [Remarks]
  • URL: http://mswebs.naist.jp/LABs/uraoka/index.html