| Budget Amount *help |
¥47,450,000 (Direct Cost: ¥36,500,000、Indirect Cost: ¥10,950,000)
Fiscal Year 2010: ¥8,060,000 (Direct Cost: ¥6,200,000、Indirect Cost: ¥1,860,000)
Fiscal Year 2009: ¥8,060,000 (Direct Cost: ¥6,200,000、Indirect Cost: ¥1,860,000)
Fiscal Year 2008: ¥31,330,000 (Direct Cost: ¥24,100,000、Indirect Cost: ¥7,230,000)
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| Research Abstract |
Heusler alloy thin films are promising as ferromagnetic electrode materials because they feature high spin polarization arising from their potentially half-metallic nature. High-quality heterostructures with Heusler alloy thin films were developed for device applications. Given these heterostructures, excellent devices characteristics were demonstrated for magnetic tunnel junctions. Furthermore, giant oscillations in spin-dependent tunneling resistances as a function of barrier thickness were found for fully epitaxial magnetic tunnel junctions with Heusler alloy Co2Cr0.6Fe0.4Al electrodes and a MgO barrier.
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