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Si single-electron transfer devices using potential fluctuation by a few dopants

Research Project

Project/Area Number 20246060
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionShizuoka University

Principal Investigator

TABE Michiharu  Shizuoka University, 電子工学研究所, 教授 (80262799)

Co-Investigator(Kenkyū-buntansha) INOKAWA Hiroshi  静岡大学, 電子工学研究所, 教授 (50393757)
SATOH Hiroaki  静岡大学, 電子工学研究所, 助教 (00380113)
IKEDA Hiroya  静岡大学, 電子工学研究所, 准教授 (00262882)
Project Period (FY) 2008 – 2010
Project Status Completed (Fiscal Year 2011)
Budget Amount *help
¥45,110,000 (Direct Cost: ¥34,700,000、Indirect Cost: ¥10,410,000)
Fiscal Year 2011: ¥7,670,000 (Direct Cost: ¥5,900,000、Indirect Cost: ¥1,770,000)
Fiscal Year 2010: ¥10,140,000 (Direct Cost: ¥7,800,000、Indirect Cost: ¥2,340,000)
Fiscal Year 2009: ¥11,050,000 (Direct Cost: ¥8,500,000、Indirect Cost: ¥2,550,000)
Fiscal Year 2008: ¥16,250,000 (Direct Cost: ¥12,500,000、Indirect Cost: ¥3,750,000)
Keywords少数電子素子 / 電子デバイス・機器 / 半導体超微細化 / シリコン
Research Abstract

In this work, the following results have been obtained.(1) Even under existence of many phosphorous donors, a single donor determines sub-threshold characteristics.(2) In a device, where three phosphorous atoms determine the sub-threshold characteristics, single-electron transfer has been demonstrated.(3) By low-temperature Kelvin probe force microscopy, individual charged donors and acceptors were observed, and then potential change due to electron injection into the dopant was observed.

Report

(5 results)
  • 2010 Annual Research Report   Self-evaluation Report ( PDF )   Final Research Report ( PDF )
  • 2009 Annual Research Report
  • 2008 Annual Research Report
  • Research Products

    (164 results)

All 2011 2010 2009 2008 Other

All Journal Article (35 results) (of which Peer Reviewed: 35 results) Presentation (109 results) Book (5 results) Remarks (15 results)

  • [Journal Article] Kelvin Probe Force Microsco pe me as urement uncertainty2011

    • Author(s)
      M. Ligowski, M. Tabe and R. Jablonski
    • Journal Title

      Advanced Materials Research

      Volume: 222 Pages: 114-117

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Memory effects based on dopant atoms innano-FETs2011

    • Author(s)
      D. Moraru, E. Hamid, J. C. Tarido, S. Miki, T. Mizuno and M. Tabe
    • Journal Title

      Advanced Materials Research

      Volume: 222 Pages: 122-125

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Si-based single-dopant atom devices2011

    • Author(s)
      M. Tabe, D. Moraru, A. Udhiarto, S. Miki, M. Anwar, Y. Kawai and T. Mizuno
    • Journal Title

      Advanced Materials Research

      Volume: 222 Pages: 205-208

    • Related Report
      2010 Annual Research Report 2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Single-photon detection by Si single-electron FETs2011

    • Author(s)
      M. Tabe, A. Udhiarto, D. Moraru and T. Mizuno
    • Journal Title

      Phys. Status Solidi A

      Volume: 208 Pages: 646-651

    • Related Report
      2010 Annual Research Report 2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel2011

    • Author(s)
      M. Anwar, D. Moraru, Y. Kawai, M. Ligowski, T. Mizuno, R. Jablonski, M. Tabe
    • Journal Title

      Key Engineering Materials

      Volume: 470 Pages: 33-38

    • Related Report
      2010 Annual Research Report 2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Tunable Single-Electron Turnstile using Discrete Dopants in Nanoscale SOI-FETs2011

    • Author(s)
      D. Moraru, K. Yokoi, R. Nakamura, S. Miki, T. Mizuno and M. Tabe
    • Journal Title

      Key Engineering Materials

      Volume: 470 Pages: 27-32

    • Related Report
      2010 Annual Research Report 2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Memory effects based on dopant atoms in nano-FETs2011

    • Author(s)
      D.Moraru
    • Journal Title

      Advanced Materials Research

      Volume: 222 Pages: 122-125

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Kelvin Probe Force Microscope measurement uncertainty2011

    • Author(s)
      M.Ligowski
    • Journal Title

      Advanced Materials Research

      Volume: 222 Pages: 114-117

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Single-electron transfer between two donors in nanoscale thin silicon-on-insulator field-effect transistors2010

    • Author(s)
      E. Hamid, D. Moraru, J. C. Tarido, S. Miki, T. Mizuno and M. Tabe
    • Journal Title

      Appl. Phys. Lett.

      Volume: 97

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Electrical control of capacitance dispersion for single-electron turnstile operation in common-gated junction arrays2010

    • Author(s)
      K. Yokoi, D. Moraru, T. Mizuno and M. Tabe
    • Journal Title

      J. Appl. Phys.

      Volume: 108

    • NAID

      120006682977

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Single-Electron Transpo rtthrough Single Dopants in a Dopant-Rich Environment2010

    • Author(s)
      M. Tabe, D. Moraru, M. Ligowski, M. Anwar, R. Jablonski, Y. Ono and T. Mizuno
    • Journal Title

      Phys. Rev. Lett.

      Volume: 105

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Observation of Discrete Do pant Potential and Its Application to Si Single-Electron Devices2010

    • Author(s)
      M. Tabe, D. Moraru, M. Ligowski, M. Anwar, K. Yokoi, R. Jablonski and T. Mizuno
    • Journal Title

      Thin Solid Films

      Volume: 518

    • NAID

      120001968755

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Single-electron transfer between two donors in nanoscale thin silicon-on-insulator field-effect transistors2010

    • Author(s)
      E. Hamid, D. Moraru, J.C. Tarido, S. Miki, T. Mizuno, M. Tabe
    • Journal Title

      Appl.Phys.Lett. 97

    • Related Report
      2010 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Electrical control of capacitance dispersion for single-electron turnstile operation in commongated junction arrays2010

    • Author(s)
      K. Yokoi, D. Moraru, T. Mizuno, M. Tabe
    • Journal Title

      J.Appl.Phys. 108

    • Related Report
      2010 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Single-Electron Transport through Single Dopants in a Dopant-Rich Environment2010

    • Author(s)
      M. Tabe, D. Moraru, M. Ligowski, M. Anwar, R. Jablonski, Y. Ono, T. Mizuno
    • Journal Title

      Phys.Rev.Lett. Vol.105

    • Related Report
      2010 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Single-Electron Transport through Single Dopants in a Dopant-Rich Environment2010

    • Author(s)
      M.Tabe
    • Journal Title

      Phys. Rev. Lett.

      Volume: 105

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Electrical control of capacitance dispersion for single-electron turnstile operation in common-gated junction arrays2010

    • Author(s)
      K.Yokoi
    • Journal Title

      J. Appl. Phys.

      Volume: 108

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Single-electron transfer between two donors in nanoscale thin silicon-on-insulator field-effect transistors2010

    • Author(s)
      E.Hamid
    • Journal Title

      Appl. Phys. Lett.

      Volume: 97

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Observation of Discrete Dopant Potential and Its Application to Si Single-Electron Devices2010

    • Author(s)
      M.Tabe
    • Journal Title

      Thin Solid Films 518

    • NAID

      120001968755

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Detection of in dividual dopants in single-electron devices-A study by KFM observation and simulation2009

    • Author(s)
      M. Ligowski, D. Moraru, M. Anwar, J. C. Tarido, T. Mizuno, M. Tabe, R. Jablonski
    • Journal Title

      Journal of Automation, Mobile Robotics & Intelligent Systems

      Volume: 3 Pages: 130-133

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Single-electron transport characte ristics in quantum dot arrays due to ionized dopants2009

    • Author(s)
      D. Moraru, M. Ligowski, J. C. Tarido, S. Miki, R. Nakamura, K. Yokoi, T. Mizuno, M. Tabe
    • Journal Title

      Journal of Automation, Mobile Robotics & Intelligent Systems

      Volume: 3 Pages: 52-54

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] A photon position sensor consisting of single-electron circuits2009

    • Author(s)
      A. K. Kikombo, M. Tabe and Y. Amemiya
    • Journal Title

      Nanotechinology

      Volume: 20

    • NAID

      120001633733

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Single-Electron Transfer by Inter-Dopant Coupling Tuning in Doped Nanowire Silicon-On-Insulator Field-Effect Transistors2009

    • Author(s)
      D. Moraru, M. Ligowski, K. Yokoi, T. Mizuno and M. Tabe
    • Journal Title

      Appl. Phys. Express

      Volume: 2

    • NAID

      10025087024

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Single-Gated Single-Electron Transfer in Nonuniform Arrays of Quantum Dots2009

    • Author(s)
      K. Yokoi, D. Moraru, M. Ligowski and M. Tabe
    • Journal Title

      Japan Journal Applied Physics

      Volume: 48

    • NAID

      120001820459

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Si Single-Electron SOI-MOSFETs : Interplay with Individual Dopants and Photons2009

    • Author(s)
      M. Tabe, Z. A. Burhanudin, R. Nuryadi, D. Moraru, M. Ligowski, R. Jablonskiand T. Mizuno
    • Journal Title

      MRSfall meeting 2008 proceedings, 2009Materials Research Society

      Pages: 1-7

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Single-electron transfer by inter-dopant coupling tuning in doped nanowire silicon-on-insulator field-effect transistors2009

    • Author(s)
      D. Moraru, M. Ligowski, K. Yokoi, T. Mizuno, M. Tabe
    • Journal Title

      Appl.Phys.Express. Vol.2, no.7

      Pages: 71201-71201

    • NAID

      10025087024

    • Related Report
      2010 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Single-Electron Transfer by Inter-Dopant Coupling Tuning in Doped Nano wire Silicon-On-Insulator Field-Effect Transistors2009

    • Author(s)
      D.Moraru
    • Journal Title

      Appl.Phys.Express 2

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] A photon position sensor consisting of single-electron circuits2009

    • Author(s)
      A.K.Kikombo
    • Journal Title

      Nanotechinology 20

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Single-electron transport characteristics in quantum dot arrays due to ionized dopants2009

    • Author(s)
      D.Moraru
    • Journal Title

      Journal of Automation, Mobile Robotics & Intelligent Systems 3

      Pages: 52-54

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Detection of individual dopants in single-electron devices-A study by KFM observation and simulation2009

    • Author(s)
      M.Ligowski
    • Journal Title

      Journal of Automation, Mobile Robotics & Intelligent Systems 3

      Pages: 130-133

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Si Single-Electron SOI-MOSFETs : Interplay with Individual Dopants and Photons2009

    • Author(s)
      Michiharu Tabe
    • Journal Title

      MRS fall meet ing 2008 proceedings, 2009 Materials Research Society 1145-MM10-01

      Pages: 1-7

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Single-Gated Single-Electron Transfer in Nonuni form Arrays of Quantum Dots2009

    • Author(s)
      Kiyohito Yokoi
    • Journal Title

      Japan Journal Applied Physics 48

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Observation of individual dopantsin a thin silicon layer by low tem perture Kelvin Prove Force Microscope2008

    • Author(s)
      M. Ligowski, D. Moraru, M. Anwar, T. Mizuno, R. Jablonski and M. Tabe
    • Journal Title

      Applied Physics Letters

      Volume: 93

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Observation of individual dopants in a thin silicon layer by low temperature Kelvin Probe Force Microscope2008

    • Author(s)
      M. Ligowski, D. Moraru, M. Anwar, T. Mizuno, R. Jablonski, M. Tabe
    • Journal Title

      Appl.Phys.Lett. Vol.93

      Pages: 142101-142101

    • Related Report
      2010 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Observation of individual dopants in a thin silicon layer by low temperture Kelvin Prove Force Microscope2008

    • Author(s)
      Maciej Ligowski
    • Journal Title

      Applied Physics Letters 93

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Presentation] Siナノワイヤp-nダイオードにおけるランダムテレグラフシグナルの観察2011

    • Author(s)
      D.Moraru
    • Organizer
      2011年春季第58回応用物理学関係連合講演会
    • Place of Presentation
      東日本大震災の為、講演予稿集の発行のみ
    • Year and Date
      2011-03-09
    • Related Report
      2010 Annual Research Report
  • [Presentation] Single-Electron Memory Effects in Double-Donor and Triple-Donor Systems2011

    • Author(s)
      E.Hamid
    • Organizer
      2011年春季第58回応用物理学関係連合講演会
    • Place of Presentation
      東日本大震災の為、講演予稿集の発行のみ
    • Year and Date
      2011-03-09
    • Related Report
      2010 Annual Research Report
  • [Presentation] Photon-Induced RTS due to Single Donor Charging and Discharging in Phosphorus-Doped SOI-FETs2011

    • Author(s)
      A.Udhiarto
    • Organizer
      2011年春季第58回応用物理学関係連合講演会
    • Place of Presentation
      東日本大震災の為、講演予稿集の発行のみ
    • Year and Date
      2011-03-09
    • Related Report
      2010 Annual Research Report
  • [Presentation] Topography and Electronic Potential Correlation in Phosphorus-Doped FET Channel Measured by LT-KFM2011

    • Author(s)
      R.Nowak
    • Organizer
      2011年春季第58回応用物理学関係連合講演会
    • Place of Presentation
      東日本大震災の為、講演予稿集の発行のみ
    • Year and Date
      2011-03-09
    • Related Report
      2010 Annual Research Report
  • [Presentation] Possibility of Electron Transfer between Two Donors via Interface in Doped Nanoscale Si FETs2011

    • Author(s)
      J.C.Tarido
    • Organizer
      2011年春季第58回応用物理学関係連合講演会
    • Place of Presentation
      東日本大震災の為、講演予稿集の発行のみ
    • Year and Date
      2011-03-09
    • Related Report
      2010 Annual Research Report
  • [Presentation] 単一不純物を有するシリコンナノロッドトランジスタの第一原理解析2011

    • Author(s)
      葛屋陽平
    • Organizer
      2011年春季第58回応用物理学関係連合講演会
    • Place of Presentation
      東日本大震災の為、講演予稿集の発行のみ
    • Year and Date
      2011-03-09
    • Related Report
      2010 Annual Research Report
  • [Presentation] Current Intermittency in SOI-FETs under Continuous Light Illumination2011

    • Author(s)
      A. Udhiarto
    • Organizer
      電子情報通信学会SDM/ED合同研究会
    • Place of Presentation
      北海道大学(札幌市)
    • Year and Date
      2011-02-24
    • Related Report
      2010 Annual Research Report 2010 Final Research Report
  • [Presentation] Single-electron transfer between two donors in thin nanoscalesilicon transistors2011

    • Author(s)
      D. Moraru
    • Organizer
      電子情報通信学会SDM/ED合同研究会
    • Place of Presentation
      北海道大学(札幌市)
    • Year and Date
      2011-02-24
    • Related Report
      2010 Final Research Report
  • [Presentation] Single-electron transfer between two donors in thin nanoscale silicon transistors2011

    • Author(s)
      D.Moraru
    • Organizer
      電子情報通信学会SDM/ED合同研究会
    • Place of Presentation
      北海道大学(札幌市)
    • Year and Date
      2011-02-24
    • Related Report
      2010 Annual Research Report
  • [Presentation] Si Single Dopant Devices2011

    • Author(s)
      M. Tabe
    • Organizer
      The Int. Symp. on Nanoscale Transport and Technology(ISNTT2011)
    • Place of Presentation
      NTT厚木R & Dセンター(厚木市)
    • Year and Date
      2011-01-12
    • Related Report
      2010 Final Research Report
  • [Presentation] Si Single Dopant Devices2011

    • Author(s)
      M. Tabe
    • Organizer
      The Int.Symp. on Nanoscale Transport and Technology (ISNTT2011)
    • Place of Presentation
      Atsugi
    • Year and Date
      2011-01-12
    • Related Report
      2010 Self-evaluation Report
  • [Presentation] Si Single Dopant Devices2011

    • Author(s)
      M.Tabe
    • Organizer
      The Int. Symp. on Nanoscale Transport and Technology (ISNTT2011)
    • Place of Presentation
      NTT厚木R&Dセンター(厚木市)
    • Year and Date
      2011-01-12
    • Related Report
      2010 Annual Research Report
  • [Presentation] Observation of individual dopants in Si channel by Low-Temeperature KFM2010

    • Author(s)
      M. Tabe
    • Organizer
      18th Int. Colloquium on Scanning Probe Microscopy(ICSPM18)
    • Place of Presentation
      熱川ハイツ(東伊豆町)
    • Year and Date
      2010-12-11
    • Related Report
      2010 Final Research Report
  • [Presentation] Observation of individual dopants in Si channel by Low-Temeperature KFM2010

    • Author(s)
      M. Tabe
    • Organizer
      18th Int. Colloquium on Scanning Probe Microscopy (ICSPM18)
    • Place of Presentation
      Atagawa
    • Year and Date
      2010-12-11
    • Related Report
      2010 Self-evaluation Report
  • [Presentation] Observation of individual dopants in Si channel by Low-Temeperature KFM2010

    • Author(s)
      M.Tabe
    • Organizer
      18th Int. Colloquium on Scanning Probe Microscopy (ICSPM18)
    • Place of Presentation
      熱川ハイツ(東伊豆町)
    • Year and Date
      2010-12-11
    • Related Report
      2010 Annual Research Report
  • [Presentation] SOIを利用した新たな輸送制御による新機能デバイスの研究について2010

    • Author(s)
      田部道晴
    • Organizer
      島根大学
    • Place of Presentation
      島根大学(松江市) 招待講演
    • Year and Date
      2010-11-22
    • Related Report
      2010 Annual Research Report
  • [Presentation] Single-electron transport via single and multiple donors in Si-FETs2010

    • Author(s)
      D.Moraru
    • Organizer
      The 12th Takayanagi Kenjiro Memorial Symp.
    • Place of Presentation
      静岡大学(浜松市)
    • Year and Date
      2010-11-19
    • Related Report
      2010 Annual Research Report
  • [Presentation] Single dopant devices : Single-electron transport through single-dopants2010

    • Author(s)
      M. Tabe
    • Organizer
      ITRS Deterministic Doping Workshop 2
    • Place of Presentation
      UC Berkeley(USA)
    • Year and Date
      2010-11-12
    • Related Report
      2010 Final Research Report
  • [Presentation] Single dopant devices : Single-electron transport through single-dopants2010

    • Author(s)
      M. Tabe
    • Organizer
      ITRS Deterministic Doping Workshop 2
    • Place of Presentation
      USA
    • Year and Date
      2010-11-12
    • Related Report
      2010 Self-evaluation Report
  • [Presentation] Single dopant devices : Single-electron transport through single-dopants2010

    • Author(s)
      M.Tabe
    • Organizer
      ITRS Deterministic Doping Workshop 2
    • Place of Presentation
      UC Berkeley (USA)
    • Year and Date
      2010-11-12
    • Related Report
      2010 Annual Research Report
  • [Presentation] Fabrication and Characterization of Si Nanowire p-n Diodes2010

    • Author(s)
      S.Miki
    • Organizer
      2010 Korean-Japanese-Student Workshop (KJS Workshop)
    • Place of Presentation
      Pusan National University (Korea)
    • Year and Date
      2010-11-03
    • Related Report
      2010 Annual Research Report
  • [Presentation] 低温KFMによるリンをドープしたSOI表面の電位観察2010

    • Author(s)
      川合雄也
    • Organizer
      応用物理学会東海支部第17回基礎セミナー
    • Place of Presentation
      静岡大学(浜松市)
    • Year and Date
      2010-10-20
    • Related Report
      2010 Annual Research Report
  • [Presentation] Single-Photon Detection by Individual Dopants and the Effect of Channel Shape in SOI-FET2010

    • Author(s)
      A. Udhiarto
    • Organizer
      2010 Int. Conf. on Solid State Devices and Materials(SSDM 2010)
    • Place of Presentation
      東京大学(東京都)
    • Year and Date
      2010-09-23
    • Related Report
      2010 Final Research Report
  • [Presentation] Single-Photon Detection by Individual Dopants and the Effect of Channel Shape in SOI-FET2010

    • Author(s)
      A.Udhiarto
    • Organizer
      2010 Int. Conf. on Solid State Devices and Materials (SSDM 2010)
    • Place of Presentation
      東京大学(東京都)
    • Year and Date
      2010-09-23
    • Related Report
      2010 Annual Research Report
  • [Presentation] KFM Observation of Single-Electron Filling in Isolated and Clustered Dopants2010

    • Author(s)
      M. Anwar
    • Organizer
      2010 Int. Conf. on Solid State Devices and Materials(SSDM 2010)
    • Place of Presentation
      東京大学(東京都)
    • Year and Date
      2010-09-22
    • Related Report
      2010 Final Research Report
  • [Presentation] KFM Observation of Single-Electron Filling in Isolated and Clustered Dopants2010

    • Author(s)
      M.Anwar
    • Organizer
      2010 Int. Conf. on Solid State Devices and Materials (SSDM 2010)
    • Place of Presentation
      東京大学(東京都)
    • Year and Date
      2010-09-22
    • Related Report
      2010 Annual Research Report
  • [Presentation] Single-, Double-, and Triple-Dot Arrays in Patterned Phosphorus-Doped Nano-FETs2010

    • Author(s)
      D.Moraru
    • Organizer
      2010年秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎市)
    • Year and Date
      2010-09-17
    • Related Report
      2010 Annual Research Report
  • [Presentation] Single-Electron Charging by Extension of Dopant-Induced Quantum Dot at Interfaces under Electric Field2010

    • Author(s)
      E.Hamid
    • Organizer
      2010年秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎市)
    • Year and Date
      2010-09-17
    • Related Report
      2010 Annual Research Report
  • [Presentation] KFM Observation of Single-Electron Filling in Individual Dopants2010

    • Author(s)
      M.Anwar
    • Organizer
      2010年秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎市)
    • Year and Date
      2010-09-17
    • Related Report
      2010 Annual Research Report
  • [Presentation] Sensitivity Enhancement of Single-Photon Detection by Channel Patterning in Phosphorus-Doped SOI-FETs2010

    • Author(s)
      A.Udhiarto
    • Organizer
      2010年秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎市)
    • Year and Date
      2010-09-17
    • Related Report
      2010 Annual Research Report
  • [Presentation] Single-Electron Trapping in Phosphorous Doped Nanoscale FETs2010

    • Author(s)
      J.C.Tarido
    • Organizer
      2010年秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎市)
    • Year and Date
      2010-09-17
    • Related Report
      2010 Annual Research Report
  • [Presentation] Siナノワイヤp-nダイオードの作製と評価2010

    • Author(s)
      三木早樹人
    • Organizer
      2010年秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎市)
    • Year and Date
      2010-09-17
    • Related Report
      2010 Annual Research Report
  • [Presentation] Kelvin Probe Force Microscope measurement uncertainty2010

    • Author(s)
      M.Ligowski
    • Organizer
      Inter-Academia 2010
    • Place of Presentation
      Riga Technical University (Latvia)
    • Year and Date
      2010-08-12
    • Related Report
      2010 Annual Research Report
  • [Presentation] Memory effects based on dopant atoms in nano-FETs2010

    • Author(s)
      D. Moraru
    • Organizer
      Inter-Academia 2010
    • Place of Presentation
      Riga Technical University(Latvia)
    • Year and Date
      2010-08-11
    • Related Report
      2010 Final Research Report
  • [Presentation] Memory effects based on dopant atoms in nano-FETs2010

    • Author(s)
      D.Moraru
    • Organizer
      Inter-Academia 2010
    • Place of Presentation
      Riga Technical University (Latvia)
    • Year and Date
      2010-08-11
    • Related Report
      2010 Annual Research Report
  • [Presentation] Si-based single-dopant atom devices2010

    • Author(s)
      M. Tabe
    • Organizer
      Inter-Academia 2010
    • Place of Presentation
      Riga Technical University(Latvia)
    • Year and Date
      2010-08-10
    • Related Report
      2010 Final Research Report
  • [Presentation] Si-based single-dopant atom devices2010

    • Author(s)
      M.Tabe
    • Organizer
      Inter-Academia 2010
    • Place of Presentation
      Riga Technical University (Latvia)
    • Year and Date
      2010-08-10
    • Related Report
      2010 Annual Research Report
  • [Presentation] Si single-dopant devices and their characterization2010

    • Author(s)
      M. Tabe
    • Organizer
      2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2010)
    • Place of Presentation
      Tokyo
    • Year and Date
      2010-07-01
    • Related Report
      2010 Self-evaluation Report
  • [Presentation] Si single-dopant devices and their characterization2010

    • Author(s)
      D.Moraru
    • Organizer
      2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2010)
    • Place of Presentation
      東京工業大学(東京都)
    • Year and Date
      2010-07-01
    • Related Report
      2010 Annual Research Report
  • [Presentation] Single-dopant memory effect in P-doped Si SOI-MOSFETs2010

    • Author(s)
      M.Tabe
    • Organizer
      2010 Silicon Nanoelectronics Workshop
    • Place of Presentation
      Hilton Hawaiian Village (USA)
    • Year and Date
      2010-06-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] Control of dopant-induced quantum dots by channel geometry2010

    • Author(s)
      D. Moraru
    • Organizer
      2010 Silicon Nanoelectronics Workshop
    • Place of Presentation
      Hilton Hawaiian Village(USA)
    • Year and Date
      2010-06-13
    • Related Report
      2010 Final Research Report
  • [Presentation] Control of dopant-induced quantum dots by channel geometry2010

    • Author(s)
      D.Moraru
    • Organizer
      2010 Silicon Nanoelectronics Workshop
    • Place of Presentation
      Hilton Hawaiian Village (USA)
    • Year and Date
      2010-06-13
    • Related Report
      2010 Annual Research Report
  • [Presentation] Single-photon detection by Si single-electron FETs2010

    • Author(s)
      M. Tabe
    • Organizer
      European MRS(E-MRS) Symp. J : Silicon-based nanophotonics
    • Place of Presentation
      Congress Center(France)
    • Year and Date
      2010-06-08
    • Related Report
      2010 Final Research Report
  • [Presentation] Single-photon detection by Si single-electron FETs2010

    • Author(s)
      M. Tabe
    • Organizer
      European MRS (E-MRS) Symp. J : Silicon-based nanophotonics
    • Place of Presentation
      France
    • Year and Date
      2010-06-08
    • Related Report
      2010 Self-evaluation Report
  • [Presentation] Single-photon detection by Si single-electron FETs2010

    • Author(s)
      M.Tabe
    • Organizer
      European MRS (E-MRS) Symp. J : Silicon-based nanophotonics
    • Place of Presentation
      Congress Center (France)
    • Year and Date
      2010-06-08
    • Related Report
      2010 Annual Research Report
  • [Presentation] Tunable single-electron turnstile using discrete dopants in nanoscale SOI-FETs2010

    • Author(s)
      D.Moraru
    • Organizer
      Int. Symp. on Technology Evolution for Silicon Nano-Electronics (ISTESNE)
    • Place of Presentation
      東京工業大学(東京都)
    • Year and Date
      2010-06-05
    • Related Report
      2010 Annual Research Report
  • [Presentation] KFM observation of electron charging and discharging in phosphorus-doped SOI channel2010

    • Author(s)
      M.Anwar
    • Organizer
      Int. Symp. on Technology Evolution for Silicon Nano-Electronics (ISTESNE)
    • Place of Presentation
      東京工業大学(東京都)
    • Year and Date
      2010-06-04
    • Related Report
      2010 Annual Research Report
  • [Presentation] Charging phenomena of a single electron in P-doped Si SOI-MOSFETs2010

    • Author(s)
      E.Hamid
    • Organizer
      電子情報通信学会ED, CPM, SDM合同研究会
    • Place of Presentation
      静岡大学(浜松市)
    • Year and Date
      2010-05-13
    • Related Report
      2010 Annual Research Report
  • [Presentation] Single Photon Detection in Single Dot and Multi Dot Channel Phosphorus-Doped SOI-FET2010

    • Author(s)
      A.Udhiarto
    • Organizer
      電子情報通信学会ED, CPM, SDM合同研究会
    • Place of Presentation
      静岡大学(浜松市)
    • Year and Date
      2010-05-13
    • Related Report
      2010 Annual Research Report
  • [Presentation] Si中に低加速イオン注入したAsの低温KFM観察2010

    • Author(s)
      川合雄也
    • Organizer
      2010年春季 第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学 (平塚市)
    • Year and Date
      2010-03-20
    • Related Report
      2009 Annual Research Report
  • [Presentation] Single-Dopant Control in Single-Electron Transport through Arrays of Donants2010

    • Author(s)
      D.Moraru
    • Organizer
      2010年春季 第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学 (平塚市)
    • Year and Date
      2010-03-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] Observation of Si Channel Potential by LT-KFM2010

    • Author(s)
      M.Anwar
    • Organizer
      2010年春季 第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学 (平塚)
    • Year and Date
      2010-03-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] Interaction of Single Photon and Single Electron Transport in Phosphorus-Doped SOI-FET2010

    • Author(s)
      A.Udhiarto
    • Organizer
      2010年春季 第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学 (平塚市)
    • Year and Date
      2010-03-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] ディスク状チャネルをもつ単電子トランジスタの特性2010

    • Author(s)
      中村竜輔
    • Organizer
      2010年春季 第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学 (平塚市)
    • Year and Date
      2010-03-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] Simulation and experimental study of single electron trapping in dopednanoscale FETs2010

    • Author(s)
      E.Hamid
    • Organizer
      2010年春季 第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学 (平塚市)
    • Year and Date
      2010-03-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] Towards Silicon-based Single Dopant Technology2010

    • Author(s)
      M. Tabe
    • Organizer
      Atom-scale Silicon Hybrid Nanotechnolgies for' More-than-Moore' and' Beyond CMOS' Era
    • Place of Presentation
      University of Southampton(UK)
    • Year and Date
      2010-03-01
    • Related Report
      2010 Final Research Report
  • [Presentation] Towards Silicon-based Single Dopant Technology2010

    • Author(s)
      田部道晴
    • Organizer
      JST Int. Sympo. on Atom-scale Silicon Hybrid Nanotechnolgies for 'More-than-Moore' and 'Beyond CMOS' Era
    • Place of Presentation
      University of Southampton (UK)
    • Year and Date
      2010-03-01
    • Related Report
      2009 Annual Research Report
  • [Presentation] Si Single-Dopant FETs and Observation of Single-Dopant Potential by LT-KFM2010

    • Author(s)
      M. Tabe
    • Organizer
      5th Int. Workshop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      東北大学(仙台市)
    • Year and Date
      2010-01-29
    • Related Report
      2010 Final Research Report
  • [Presentation] Si Single-Dopant FETs and Observation of Single-Dopant Potential by LT-KFM2010

    • Author(s)
      田部道晴
    • Organizer
      5th Int. Workshop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      東北大学 (仙台市)
    • Year and Date
      2010-01-29
    • Related Report
      2009 Annual Research Report
  • [Presentation] シングルドーパントデバイスの現状と課題2010

    • Author(s)
      田部道晴
    • Organizer
      応用物理学会シリコンテクノロジー分科会第117回研究集会
    • Place of Presentation
      早稲田大学(東京都)
    • Year and Date
      2010-01-22
    • Related Report
      2010 Final Research Report
  • [Presentation] シングルドーパントデバイスの現状と課題2010

    • Author(s)
      田部道晴
    • Organizer
      応用物理学会シリコンテクノロジー分科会第117回研究集会
    • Place of Presentation
      早稲田大学 (東京都)
    • Year and Date
      2010-01-22
    • Related Report
      2009 Annual Research Report
  • [Presentation] シリコン ドーパント原子デバイス2009

    • Author(s)
      田部道晴
    • Organizer
      日本表面科学会中部支部研究会
    • Place of Presentation
      名古屋工業大学 (名古屋市)
    • Year and Date
      2009-12-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] 低温 Kelvin Probe Force 顕微鏡によるイオン注入効果の観察2009

    • Author(s)
      川合雄也
    • Organizer
      第9回 日本表面科学会中部支部 学術講演会
    • Place of Presentation
      名古屋工業大学 (名古屋市)
    • Year and Date
      2009-12-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] Single Dopant Memory Effect in Ultra-Thin Silicon Field Effect Transistors2009

    • Author(s)
      J.C.Tarido
    • Organizer
      第9回 日本表面科学会中部支部 学術講演会
    • Place of Presentation
      名古屋工業大学 (名古屋市)
    • Year and Date
      2009-12-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] シリコンドーパント原子デバイス2009

    • Author(s)
      田部道晴
    • Organizer
      電子情報通信学会北海道支部・IEEE札幌支部共催講演会
    • Place of Presentation
      北海道大学(札幌市)
    • Year and Date
      2009-12-11
    • Related Report
      2010 Final Research Report
  • [Presentation] シリコンドーパント原子デバイス2009

    • Author(s)
      田部道晴
    • Organizer
      電子情報通信学会北海道支部・IEEE札幌支部共催講演会
    • Place of Presentation
      北海道大学 (札幌市)
    • Year and Date
      2009-12-11
    • Related Report
      2009 Annual Research Report
  • [Presentation] Calibration and inaccuracy estimation of Kelvin Probe Force Microscopy technique2009

    • Author(s)
      M. Ligowski
    • Organizer
      Mechatronics 2009
    • Place of Presentation
      Brno University of Technology(Czech Republic)
    • Year and Date
      2009-11-18
    • Related Report
      2010 Final Research Report
  • [Presentation] Calibration and inaccuracy estimation of Kelvin Probe Force Microscopy technique2009

    • Author(s)
      M.Ligowski
    • Organizer
      Mechatronics 2009
    • Place of Presentation
      Brno University of Technology (Czech Republic)
    • Year and Date
      2009-11-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] Breakthrough of Advanced Nano-Silicon Devices2009

    • Author(s)
      田部道晴
    • Organizer
      2nd Int. Conf. Advanced Material and Practice of Nanotechnology
    • Place of Presentation
      BPPT Building 2 (Indonesia)
    • Year and Date
      2009-11-11
    • Related Report
      2009 Annual Research Report
  • [Presentation] Single Dopant Electronics2009

    • Author(s)
      田部道晴
    • Organizer
      The 6th Korean-Japanese Student Workshop
    • Place of Presentation
      静岡大学 (浜松市)
    • Year and Date
      2009-10-29
    • Related Report
      2009 Annual Research Report
  • [Presentation] Si Single Electron Devices Using Individual Dopants2009

    • Author(s)
      S.Miki
    • Organizer
      The 6th Korean-Japanese Student Workshop
    • Place of Presentation
      静岡大学 (浜松市)
    • Year and Date
      2009-10-29
    • Related Report
      2009 Annual Research Report
  • [Presentation] Single-Electron Transport through Discrete Dopants2009

    • Author(s)
      D.Moraru
    • Organizer
      2009 Int. Conf. on Solid State Devices and Materials
    • Place of Presentation
      仙台国際ホテル (仙台市)
    • Year and Date
      2009-10-07
    • Related Report
      2009 Annual Research Report
  • [Presentation] Detection of individual dopants in single-electron devices-A study by KFM observation and simulation2009

    • Author(s)
      M.Ligowski
    • Organizer
      Inter-Academia 2009
    • Place of Presentation
      SARP Dom Architekta (Poland)
    • Year and Date
      2009-09-16
    • Related Report
      2009 Annual Research Report
  • [Presentation] Single-electron transport characteristics in quantum dot arrays due to ionized dopants2009

    • Author(s)
      D.Moraru
    • Organizer
      Inter-Academia 2009
    • Place of Presentation
      SARP Dom Architekta (Poland)
    • Year and Date
      2009-09-15
    • Related Report
      2009 Annual Research Report
  • [Presentation] ゲート容量と接合容量の不均一性が単電子転送動作に与える効果2009

    • Author(s)
      田部道晴
    • Organizer
      2009年秋季 第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学 (富山市)
    • Year and Date
      2009-09-11
    • Related Report
      2009 Annual Research Report
  • [Presentation] Single-electron transport through individual dopants in heavily-dopednanoscale FETs2009

    • Author(s)
      D.Moraru
    • Organizer
      2009年秋季 第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学 (富山市)
    • Year and Date
      2009-09-11
    • Related Report
      2009 Annual Research Report
  • [Presentation] Possibility of single-electron trapping by a single dopant in doped nanoscale FETs2009

    • Author(s)
      E.Hamid
    • Organizer
      2009年秋季 第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学 (富山市)
    • Year and Date
      2009-09-11
    • Related Report
      2009 Annual Research Report
  • [Presentation] Observation of Single-Electron Charging in Dopant Potential by Kelvin Probe Force Microscope2009

    • Author(s)
      M.Anwar
    • Organizer
      2009年秋季 第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学 (富山市)
    • Year and Date
      2009-09-11
    • Related Report
      2009 Annual Research Report
  • [Presentation] Si Multi-dot FET Using Discrete Dopants2009

    • Author(s)
      M. Tabe
    • Organizer
      5th Handai Nanoscience and Nanotechnology International Symposiu
    • Place of Presentation
      大阪大学(吹田市)
    • Year and Date
      2009-09-03
    • Related Report
      2010 Final Research Report
  • [Presentation] Si Multi-dot FET Using Discrete Dopants2009

    • Author(s)
      田部道晴
    • Organizer
      5th Handai Nanoscience and Nanotechnology International Symposium
    • Place of Presentation
      大阪大学 (吹田市)
    • Year and Date
      2009-09-03
    • Related Report
      2009 Annual Research Report
  • [Presentation] Inter-Dopant Coupling Tuning for Single-Electron Transfer2009

    • Author(s)
      D.Moraru
    • Organizer
      2009 Silicon Nanoelectronics Workshop
    • Place of Presentation
      Ringa Royal Hotel (京都市)
    • Year and Date
      2009-06-14
    • Related Report
      2009 Annual Research Report
  • [Presentation] Single-Dopant Resolved Characteristics in Doped Nanowire Field-Effect Transistors2009

    • Author(s)
      D.Moraru
    • Organizer
      2009 Silicon Nanoelectronics Workshop
    • Place of Presentation
      Ringa Royal Hotel (京都市)
    • Year and Date
      2009-06-13
    • Related Report
      2009 Annual Research Report
  • [Presentation] Observation of discrete dopant potential and its application to Si single-electron devices2009

    • Author(s)
      M. Tabe
    • Organizer
      6th International Conference on Silicon Epitaxy and Heterostructures
    • Place of Presentation
      Ayres Hotel(USA)
    • Year and Date
      2009-05-18
    • Related Report
      2010 Final Research Report
  • [Presentation] Observation of discrete dopant potential and its application to Si single-electron devices2009

    • Author(s)
      田部道晴
    • Organizer
      6th International Conference on Silicon Epitaxy and Heterostructures
    • Place of Presentation
      Ayres Hotel (USA)
    • Year and Date
      2009-05-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] 多重トンネル接合によるランダムな接合容量下での単電子転送シミュレーション2009

    • Author(s)
      田部道晴
    • Organizer
      2009年春季第56回応用物理学関係連合講演会
    • Place of Presentation
      つくば
    • Year and Date
      2009-03-30
    • Related Report
      2008 Annual Research Report
  • [Presentation] Inter-dopant coupling modulation in double-gated doped-nanowire FETs2009

    • Author(s)
      モラル・ダニエル
    • Organizer
      2009年春季第56回応用物理学関係連合講演会
    • Place of Presentation
      つくば
    • Year and Date
      2009-03-30
    • Related Report
      2008 Annual Research Report
  • [Presentation] Surface Potential of Thin Si Channel Measured by Low Temperature Kelvin Probe Force Microscope (LT-KFM)2009

    • Author(s)
      Miftahul Anwar
    • Organizer
      2009年春季第56回応用物理学関係連合講演会
    • Place of Presentation
      つくば
    • Year and Date
      2009-03-30
    • Related Report
      2008 Annual Research Report
  • [Presentation] PとBを同時ドープしたSOI-MOSFETの単電子輸送特性2009

    • Author(s)
      三木早樹人
    • Organizer
      2009年春季第56回応用物理学関係連合講演会
    • Place of Presentation
      つくば
    • Year and Date
      2009-03-30
    • Related Report
      2008 Annual Research Report
  • [Presentation] Surface potential profile of doped Si channel measured bu low temperature Kelvin probe microscope (LT-KFM)2008

    • Author(s)
      ミフタフル・アンワル
    • Organizer
      第8回日本表面科学会中部支部学術講演会
    • Place of Presentation
      名古屋
    • Year and Date
      2008-12-13
    • Related Report
      2008 Annual Research Report
  • [Presentation] Application and Observation of Discrete Dopant Potential for Si Single-Electron Devices2008

    • Author(s)
      M. Tabe
    • Organizer
      IUMRS International Conference in Asia 2008
    • Place of Presentation
      Nagoya Congress Center(名古屋市)
    • Year and Date
      2008-12-10
    • Related Report
      2010 Final Research Report
  • [Presentation] Application and Observation of Discrete Dopant Potential for Si Single-Electron Devices2008

    • Author(s)
      Michiharu Tabe
    • Organizer
      IUMRS International Conference in Asia 2008
    • Place of Presentation
      Nagoya
    • Year and Date
      2008-12-10
    • Related Report
      2008 Annual Research Report
  • [Presentation] Si Single-Electron SOI-MOSFETs : Interplay with Individual Dopants and Photons2008

    • Author(s)
      M. Tabe
    • Organizer
      MRS fall meeting 2008
    • Place of Presentation
      Hynes Convention Center, Boston・MA
    • Year and Date
      2008-12-01
    • Related Report
      2010 Final Research Report
  • [Presentation] Si Single-Electron SOI-MOSFETs : Interplay with Individual Dopants and Photons2008

    • Author(s)
      Michiharu Tabe
    • Organizer
      MRS fall meeting 2008
    • Place of Presentation
      Boston・MA
    • Year and Date
      2008-12-01
    • Related Report
      2008 Annual Research Report
  • [Presentation] Atomic-level tuning of few-dopants arrays for single-electrontransfer2008

    • Author(s)
      Daniel Moraru
    • Organizer
      The 10^<th> Takayanagi Kenjiro Memorial Symposium & The 5^<th> International Symposium on Nanovision Science
    • Place of Presentation
      Hamamatsu
    • Year and Date
      2008-11-17
    • Related Report
      2008 Annual Research Report
  • [Presentation] Detect ion of Individual Dopants by Low Temperature Kelvin Probe Force Microscope2008

    • Author(s)
      Maciei Ligowski
    • Organizer
      The 10^<th> Takayanagi Kenjiro Memorial Symposium & The 5^<th> International Symposium on Nanovision Science
    • Place of Presentation
      Hamamatsu
    • Year and Date
      2008-11-17
    • Related Report
      2008 Annual Research Report
  • [Presentation] Single-Electron Transfer Operation in Inhomogeneous Arrays of Quantum Dots Introduced by Dopants2008

    • Author(s)
      Kiyohito Yokoi
    • Organizer
      The 10^<th> Takayanagi Kenjiro Memorial Symposium & The 5^<th> International Symposium on Nanovision Science
    • Place of Presentation
      Hamamatsu
    • Year and Date
      2008-11-17
    • Related Report
      2008 Annual Research Report
  • [Presentation] Measurement of Dopant-Induced Surface Potential in a Thin Silicon Layer by Low Temperature Kelvin Probe Force Microscope2008

    • Author(s)
      Miftahul Anwar
    • Organizer
      The First Circular of The 4th Korean-Japanese-Chinese students Workshop
    • Place of Presentation
      Miryang, Korea
    • Year and Date
      2008-10-29
    • Related Report
      2008 Annual Research Report
  • [Presentation] Single-Electron Transfer by Controlling the Dopant-Induced Quantum Dot Landscape2008

    • Author(s)
      Daniel Moraru
    • Organizer
      2008 International Conference on Solid state Devices and Materials (SSDM 2008)
    • Place of Presentation
      Tsukuba
    • Year and Date
      2008-09-26
    • Related Report
      2008 Annual Research Report
  • [Presentation] Dopant Freeze-out and Potential Fluctuations Observed by Low Temperature Kelvin Probe Force Microscope2008

    • Author(s)
      Maciej Ligowski
    • Organizer
      2008 International Conference on Solid state Devices and Materials (SSDM 2008)
    • Place of Presentation
      Tsukuba
    • Year and Date
      2008-09-26
    • Related Report
      2008 Annual Research Report
  • [Presentation] Silicon Single-Electron Devices : Device Physics, Fabrication and Measurements2008

    • Author(s)
      Michiharu Tabe
    • Organizer
      Inter-Academia 2008
    • Place of Presentation
      Pecs, Hungary
    • Year and Date
      2008-09-15
    • Related Report
      2008 Annual Research Report
  • [Presentation] Electrical manipulation of individual dopants and electrons in silicon nanowire field-effect transistors2008

    • Author(s)
      Daniel Moraru
    • Organizer
      Inter-Academia 2008
    • Place of Presentation
      Pecs, Hungary
    • Year and Date
      2008-09-15
    • Related Report
      2008 Annual Research Report
  • [Presentation] Detection of dopant induced potential fluctuations in silicon nanodevice channel by Low Temperature Kelvin Probe Force Microscope2008

    • Author(s)
      Maciej Ligowski
    • Organizer
      Inter-Academia 2008
    • Place of Presentation
      Pecs, Hungary
    • Year and Date
      2008-09-15
    • Related Report
      2008 Annual Research Report
  • [Presentation] ランダム系多重ドットトランジスタによる単電子転送のシミュレーション解析2008

    • Author(s)
      田部道晴
    • Organizer
      2008年秋季第69回応用物理学会学術講演会
    • Place of Presentation
      春日井
    • Year and Date
      2008-09-05
    • Related Report
      2008 Annual Research Report
  • [Presentation] Gate tuning of doped-nanowire FETs for single-electron transfer2008

    • Author(s)
      ダニエルモラル
    • Organizer
      2008年秋季第69回応用物理学会学術講演会
    • Place of Presentation
      春日井
    • Year and Date
      2008-09-05
    • Related Report
      2008 Annual Research Report
  • [Presentation] 低温KFMによるSOI-FETチャネル中のドーパントポテンシャル揺らぎの観察2008

    • Author(s)
      マチェイ リゴフスキ
    • Organizer
      2008年秋季第69回応用物理学会学術講演会
    • Place of Presentation
      春日井
    • Year and Date
      2008-09-05
    • Related Report
      2008 Annual Research Report
  • [Presentation] 単電子特性におけるドーパントイオン化ノイズ2008

    • Author(s)
      海老澤一仁
    • Organizer
      2008年秋季第69回応用物理学会学術講演会
    • Place of Presentation
      春日井
    • Year and Date
      2008-09-05
    • Related Report
      2008 Annual Research Report
  • [Presentation] Control of single dopants in the electron conduct ion path in SOI doped nanowire FETs2008

    • Author(s)
      Daniel Moraru
    • Organizer
      2008 Silicon Nanoelectronics Workshop
    • Place of Presentation
      Honolulu, Hawaii
    • Year and Date
      2008-06-16
    • Related Report
      2008 Annual Research Report
  • [Presentation] Si Bicrystal Single-Electron FETs2008

    • Author(s)
      Daniel Moraru
    • Organizer
      2008 Silicon Nanoelectronics Workshop
    • Place of Presentation
      Honolulu, Hawaii
    • Year and Date
      2008-06-15
    • Related Report
      2008 Annual Research Report
  • [Presentation] Si single-electron devices : manipulat ion of individual dopants2008

    • Author(s)
      Michiharu Tabe
    • Organizer
      Nanoscale Semiconductor Devices (IWNSD)
    • Place of Presentation
      Seoul, Korea
    • Year and Date
      2008-05-16
    • Related Report
      2008 Annual Research Report
  • [Book] ナノシリコンの最新技術と応用展開第1章8「シリコン多重ドットFETの新機能:フォトン検出と単電子転送」2010

    • Author(s)
      田部道晴
    • Publisher
      シーエムシー出版
    • Related Report
      2010 Annual Research Report 2010 Final Research Report
  • [Book] 電子情報通信学会「知識ベース」S2群-2編-第1章「シリコンナノエレクトロニクス」2010

    • Author(s)
      田部道晴
    • Publisher
      オーム社
    • Related Report
      2010 Final Research Report 2009 Annual Research Report
  • [Book] ナノシリコンの最新技術と応用展開第1章(8「シリコン多重ドットFETの新機能:フォトン検出と単電子転送」)分担執筆2010

    • Author(s)
      田部道晴, D. Moraru
    • Publisher
      シーエムシー出版
    • Related Report
      2010 Self-evaluation Report
  • [Book] 電子情報通信学会「知識ベース」(S2群ナノ・量子・バイオ-2編ナノエレクトロニクス-第1章「シリコンナノエレクトロニクス」)分担執筆2010

    • Author(s)
      田部道晴
    • Publisher
      オーム社
    • Related Report
      2010 Self-evaluation Report
  • [Book] ナノシリコンの最新技術と応用展開第1章8、「シリコン多重ドットFETの新機能 : フォトン検出と単電子転送」2010

    • Author(s)
      田部道晴
    • Total Pages
      2010
    • Publisher
      シーエムシー出版(発行予定)
    • Related Report
      2009 Annual Research Report
  • [Remarks] 静岡大学学術リポジトリ

    • URL

      http://ir.lib.shizuoka.ac.jp/

    • Related Report
      2010 Final Research Report
  • [Remarks] 電子工学研究所

    • URL

      http://www.rie.shizuoka.ac.jp/index.html

    • Related Report
      2010 Final Research Report
  • [Remarks] 田部研究室

    • URL

      http://www.rie.shizuoka.ac.jp/~nanohome/

    • Related Report
      2010 Final Research Report
  • [Remarks] 新聞掲載

    • Related Report
      2010 Self-evaluation Report
  • [Remarks] 田部道晴:集積回路原子の「ムラ」検査-静岡大、微細化促す新技術日経産業新聞(2008.10.2)

    • Related Report
      2010 Self-evaluation Report
  • [Remarks] ホームページ等

    • Related Report
      2010 Self-evaluation Report
  • [Remarks] 静岡大学学術リポジトリ

    • URL

      http://ir.lib.shizuoka.ac.jp/

    • Related Report
      2010 Self-evaluation Report
  • [Remarks] 電子工学研究所

    • URL

      http://www.rie.shizuoka.ac.jp/index.html

    • Related Report
      2010 Self-evaluation Report
  • [Remarks] 田部研究室

    • URL

      http://www.rie.shizuoka.ac.jp/~nanohome/

    • Related Report
      2010 Self-evaluation Report
  • [Remarks]

    • URL

      http://www.rie.shizuoka.ac.jp/index.html

    • Related Report
      2010 Annual Research Report
  • [Remarks]

    • URL

      http://www.rie.shizuoka.ac.jp/~nanohome/

    • Related Report
      2010 Annual Research Report
  • [Remarks]

    • URL

      http://www.rie.shizuoka.ac.jp/index.html

    • Related Report
      2009 Annual Research Report
  • [Remarks]

    • URL

      http://www.rie.shizuoka.ac.jp/~nanohome/

    • Related Report
      2009 Annual Research Report
  • [Remarks]

    • URL

      http://www.rie.shizuoka.ac.jp/index.html

    • Related Report
      2008 Annual Research Report
  • [Remarks]

    • URL

      http://www.rie.shizuoka.ac.jp/~nanohome

    • Related Report
      2008 Annual Research Report

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Published: 2008-04-01   Modified: 2017-05-19  

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