Remote-plasma-enhance MOCVD growth of ZnO-based systems for high-performance nano-structrured optical devices

• Project/Area Number: 20310059
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Nanomaterials/Nanobioscience
• Research Institution: Shizuoka University
• Principal Investigator: TEMMYO Jiro Shizuoka University, 電子工学研究所, 教授 (90334961)
• Co-Investigator(Kenkyū-buntansha): NAKAMURA Atsushi 静岡大学, 電子工学研究所, 助教 (50402243)
• Project Period (FY): 2008 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥19,500,000 (Direct Cost: ¥15,000,000、Indirect Cost: ¥4,500,000); Fiscal Year 2010: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000); Fiscal Year 2009: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000); Fiscal Year 2008: ¥12,220,000 (Direct Cost: ¥9,400,000、Indirect Cost: ¥2,820,000)
• Keywords: ナノ構造形成 / 制御 / ZnO系混晶 / MOCVD成長 / 励起子 / ラジカル / ショットキーフォトダイオード / 酸化亜鉛系薄膜 / 有機金属気相堆積法 / 光デバイス / 量子効果

Research Abstract

We studied ZnO-based alloy system using remote-plasma-enhanced CVD method for low-power consumption green devices. Green electroluminescence (EL) emission was successfully demonstrated by current injection into ZnO-based light emitting diodes with multi-quantum well structures. Alcohol CVD grown graphene layers were achieved to shows a feasibility of transparent conductive film electrodes.

Research Products

• [Journal Article] Graphene segregation on Ni/SiO2/Si substrate by alcohol CVD method (2011)
  • Author(s): Y.Miyasaka, A.Matsuyama, A.Nakamura, J.Temmyo
  • Journal Title: physica status solidi C8 Pages: 577-577
  • Peer Reviewed
• [Journal Article] Indium-doped MgZnO fims for ZnO-based heterojunction diodes (2010)
  • Author(s): T.Tsuboi, K.Yamamoto, A.Nakamura, J.Temmyo
  • Journal Title: Jpn.J.Appl.Phys. 49
  • Peer Reviewed
• [Journal Article] Growth of ZnCuO films by remote-plasma-enhanced metalorganic chemical vapor deposition with Cu(dibm)2 (2010)
  • Author(s): B.Hu, M.Adachi, K.Yamamoto, A.Nakamura, J.Temmyo
  • Journal Title: phys.status solidi C7 Pages: 1571-1571
  • Peer Reviewed
• [Journal Article] Schottky barrier contacts formed on polar and nonpolar MgZnO films grown by RPE-MOCVD (2010)
  • Author(s): A.Nakamura, T.Hayashi, A.Hierro, G.Tabares, J.M.Ulloa, E.Munoz, J.Temmyo
  • Journal Title: phys.status solidi B247 Pages: 1472-1472
  • Peer Reviewed
• [Journal Article] Structual and optical properties of Zn(Mg, Cd)O alloy films grown by RPE-MOCVD (2010)
  • Author(s): K.Yamamoto, T.Tsuboi, T.Ohashi, T.Tawara, H.Gotoh, A.Nakamura, J.Temmyo
  • Journal Title: J.Crystal Growth 312 Pages: 1703-1703
  • Peer Reviewed
• [Journal Article] Synthesis and characterization of ZnCdO/ZnO multiple quantum wells by remote-plasma-enhanced MOCVD (2010)
  • Author(s): K.Yamamoto, M.Adachi, T.Tawara, H.Gotoh, A.Nakamura, J.Temmyo
  • Journal Title: J.Crystal Growth 312 Pages: 1496-1496
  • Peer Reviewed
• [Journal Article] High responsibility and internal gain mechanism in Au-ZnMgO Schottky photodiodeds (2010)
  • Author(s): G.Tabares, A.Hierro, J.M.Ulloa, A.Guzman, E.Munoz, T.Hayashi, A.Nakamura, J.Temmyo
  • Journal Title: Appl.Phys.Lett. 96 Pages: 101112-101112
  • Peer Reviewed
• [Journal Article] Indium-doped MgZnO fims for ZnO-based heterojunction diodes (2010)
  • Author(s): T.Tsuboi, K.Yamamoto, A.Nakamura, J.Temmyo
  • Journal Title: Jpn.J.Appl.Phys. Volume: 49
  • Peer Reviewed
• [Journal Article] Schottky barrier contacts formed on polar and nonpolar MgZnO films grown by RPE-MOCVD (2010)
  • Author(s): A.Nakamura, T.Hayashi, A.Hierro, G.Tabares, J.M.Ulloa, E.Munoz, J.Temmyo
  • Journal Title: phys.status solidi Volume: B247 Pages: 1472-1472
  • Peer Reviewed
• [Journal Article] Structual and optical properties of Zn(Mg,Cd)O alloy films grown by RPE-MOCVD (2010)
  • Author(s): K.Yamamoto, T.Tsuboi, T.Ohashi, T.Tawara, H.Gotoh, A.Nakamura, J.Temmyo
  • Journal Title: J.Crystal Growth Volume: 312 Pages: 1703-1708
  • Peer Reviewed
• [Journal Article] High responsibility and internal gain mechanism in Au-ZnMgO Schottky photodiodes (2010)
  • Author(s): G.Tabares, A.Hierro, J.M.Ulloa, E.Munoz, A.Nakamura, T.Hayashi, J.Temmyo
  • Journal Title: Appl.Phys.Lett. 96 Pages: 101112-101112
  • Peer Reviewed
• [Journal Article] Investigation of morphology and crystallinity of ZnO crystal formed by side-flow-type MOCVD (2009)
  • Author(s): N.Yoshii, A.Nakamura, S.Hosaka, J.Temmyo
  • Journal Title: J.Electrochemical Soc. 156
  • Peer Reviewed
• [Journal Article] Multilayered graphene from SiC films via pyrolysis in vacuum (2009)
  • Author(s): Y.Ogawa, A.Nakamura, A.Tanaka, J.Temmyo
  • Journal Title: Jpn.J.Appl.Phys. 48
  • Peer Reviewed
• [Journal Article] Carrier compensation by deep levels in Zn_<1-x>Mg_xO/sapphire (2009)
  • Author(s): A.Hierro, G.Tabare, J.M.Ulloa, E.Munoz, A.Nakamura, T.Hayashi, J.Temmyo
  • Journal Title: Appl.Phys.Lett. 94 Pages: 232101-232101
  • Peer Reviewed
• [Journal Article] Carrier compensation by deep levels in ZnMgO/sapphire (2009)
  • Author(s): A.Hierro, G.Tabares, J.M.Ulloa, E.Munoz, A.Nakamura, T.Hayashi, J.Temmyo
  • Journal Title: Appl.Phys.Lett. 94 Pages: 232101-232101
  • Peer Reviewed
• [Journal Article] 酸化亜鉛系半導体の結晶成長と発光素子 (2008)
  • Author(s): 天明二郎
  • Journal Title: 工業材料(招待) 56 Pages: 54-54
  • Peer Reviewed
• [Journal Article] Photoluminescence lifetime and potential fluctuation in wurtzite Zn_<1-x>Cd_xO aloy films (2008)
  • Author(s): K.Yamamoto, T.Ohasi, T.Tawara, H.Gotoh, A.Nakamura, J.Temmyo
  • Journal Title: Appl.Phys.Lett. 93 Pages: 171913-171913
  • Peer Reviewed
• [Journal Article] Growth of nitrogen-doped Mg_xZn_<1-x>O for use in visible rejection photodetectors (2008)
  • Author(s): A.Nakamura, T.Aoshima, T.Hayashi, G.Gangil, J.Temmyo
  • Journal Title: J.Korean Phys.Soc. 53 Pages: 2909-2909
  • Peer Reviewed
• [Journal Article] Electroluminescence from n-Zn(Mg, Cd)O/p-4H-SiC : Al heterojunctions (2008)
  • Author(s): K.Yamamoto, T.Ohasi, A.Nakamura, J.Temmyo
  • Journal Title: J.Korean Phys.Soc. 53 Pages: 2929-2929
  • Peer Reviewed
• [Journal Article] Fabrication and EL emission of ZnO-based heterojunction light-emitting devices (2008)
  • Author(s): S.Gangil, A.Nakamura, K.Yamamoto, T.Ohashi, J.Temmyo
  • Journal Title: J.Korean Phys.Soc. 53 Pages: 212-212
  • Peer Reviewed
• [Journal Article] Dot-height dependence of photoluminescence from ZnO quantum dots (2008)
  • Author(s): A.Nakamura, K.Okamatsu, T.Tawara, H.Gotoh, Y.Matsui, J.Temmyo
  • Journal Title: Jpn.J.Appl.Phys. 47 Pages: 3007-3007
  • Peer Reviewed
• [Journal Article] Red emission from ZnO-based double hetero junction diode (2008)
  • Author(s): T.Ohahi, K.Yamamoto, A.Nakamura, J.Temmyo
  • Journal Title: Jpn.J.Appl.Phys. 47 Pages: 2961-2961
  • Peer Reviewed
• [Journal Article] Photoluminescence lifetime and potential fluctuation in wurtzite Zn_<1-x>Cd_x O alloy films (2008)
  • Author(s): K. Yamamoto, T. Ohasi, T. Tawara, H. Gotoh, A. Nakamura, J. Temmyo
  • Journal Title: Appl. Phys. Lett. 93
  • Peer Reviewed
• [Journal Article] Growth of nitrogen-doped MgxZn_<1-x>O for use in visible rejection photo detectors (2008)
  • Author(s): A. Nakaniura, T. Aoshima, T. Hayashi, G. Gangil, J, Temmyo
  • Journal Title: J. Korean Phys, Soc. 53 Pages: 2909-2911
  • Peer Reviewed
• [Journal Article] Red emission from ZnO-based double hetero junction diode (2008)
  • Author(s): T. Ohahi, K. Yamamoto, A. Nakamura, J. Temnyo
  • Journal Title: Jpn. J. Appl. Phys. 47 Pages: 2961-2964
  • Peer Reviewed
• [Presentation] 酸化亜鉛系並びにナノカーボン作製と光素子展開 (2011)
  • Author(s): 天明二郎
  • Organizer: 第28回無機材料に関する最近の研究成果発表会-材料研究の最前線から-
  • Place of Presentation: 東京,p16
  • Year and Date: 2011-01-24
• [Presentation] 酸化亜鉛系並びにナノカーボン作製と光素子展開 (2011)
  • Author(s): 天明二郎
  • Organizer: 第28回無機材料に関する最近の研究成果発表会-材料研究の最前線から-
  • Place of Presentation: 東京
  • Year and Date: 2011-01-24
• [Presentation] MgZnO : N, Cu薄膜のRPE-MOCVD成長と電気的特性評価 (2011)
  • Author(s): S.Mohanta, 中村篤志, 天明二郎
  • Organizer: 2011年春季応用物理学会講演会
  • Place of Presentation: 神奈川工科大、厚木,25a-BS-24
• [Presentation] アルコールCVD成長グラフェン層の表面抵抗率の膜厚依存性 (2011)
  • Author(s): 中村篤志, 天明二郎
  • Organizer: 2011年春季応用物理学会講演会
  • Place of Presentation: 神奈川工科大、厚木,27a-BM-4
• [Presentation] 酸化物光半導体の結晶成長と環境エネルギ素子への展開 (2010)
  • Author(s): 天明二郎
  • Organizer: 13th ZnO研究会発表会(岩手県工業センター主催)
  • Place of Presentation: 盛岡(招待基調講演)
  • Year and Date: 2010-02-19
• [Presentation] Fewlayer graphene from thin uc-3C-SiC films on sapphire (0001) substrates (2010)
  • Author(s): 野木努, 宮坂悠太, 松山明弘, 中村篤志, 田中昭, 天明二郎
  • Organizer: 37^<th> Int.Symp.Compound Semiconductors
  • Place of Presentation: Takamatsu, MoP70.(poster)
• [Presentation] Growth and characterization of MgZnO : Cu films by RPE-MOCVD (2010)
  • Author(s): 金子寿, 山本兼司, 中村篤志, 天明二郎
  • Organizer: 37^<th> Int.Symp.Compound Semiconductors
  • Place of Presentation: Takamatsu, MoP43.(poster)
• [Presentation] Graphene segregation on Ni/SiO2/Si substrate by alcohol chemical vapor deposition (2010)
  • Author(s): 宮坂悠太, 松山明弘, 野木努, 中村篤志, 天明二郎
  • Organizer: 37^<th> Int.Symp.Compound Semiconductors
  • Place of Presentation: Takamatsu, TuE1-2(oral).
• [Presentation] ZnCdO multiple-quantum-well green LEDs (2010)
  • Author(s): K.Yamamoto, A.Hierro, E.Munoz, A.Nakamura, J.Temmyo
  • Organizer: 6^<th> Intn.Workshop on ZnO and related materials
  • Place of Presentation: Changchun, China, p81(oral).
• [Presentation] Graphene Layers on Sapphire Substrates Grown by Alcohol CVD method (2010)
  • Author(s): 宮坂悠太, 中村篤志, 天明二郎
  • Organizer: 2010 SSDM
  • Place of Presentation: Tokyo, P-8-10(poster).
• [Presentation] HMDSを用いたuC-3C-SiC薄膜のHW-CVD成長 (2010)
  • Author(s): 小川泰弘、野木努、中村篤志、天明二郎
  • Organizer: 第7回Cat-CVD研究会
  • Place of Presentation: 浜松,p32
• [Presentation] Pt/ZnOショットキーコンタクトと過酸化水素処理効果 (2010)
  • Author(s): 中村篤志、山守俊哉、天明二郎
  • Organizer: 2010年秋季応用物理学会講演会
  • Place of Presentation: 長崎,15a-ZJ-5
• [Presentation] Zn(Mg, Cd)O混晶の構造並びに光学特性評価 (2010)
  • Author(s): 山本兼司、坪井貴子、大橋俊哉、俵毅彦、後藤秀樹、中村篤志, 天明二郎
  • Organizer: 2010年秋季応用物理学会講演会
  • Place of Presentation: 長崎,15p-ZJ-1
• [Presentation] SiC極薄膜を用いた熱分解グラフェン層形成の検討 (2010)
  • Author(s): 野木努、宮坂悠太、中村篤志、天明二郎
  • Organizer: 2010年秋季応用物理学会講演会
  • Place of Presentation: 長崎,16a-ZM-15
• [Presentation] アルコールCVD法によるサファイア基板上へのグラフェン成長 (2010)
  • Author(s): 宮坂悠太、中村篤志、天明二郎
  • Organizer: 2010年秋季応用物理学会講演会
  • Place of Presentation: 長崎,17a-ZM-7
• [Presentation] μc-3C-SiC薄膜の熱分解多層グラフェン形成の熱分解時間依存性 (2010)
  • Author(s): 野木努, 宮坂悠太, 松山明弘, 中村篤志, 田中昭, 天明二郎
  • Organizer: 2010年春季応用物理学会講演会
  • Place of Presentation: 東海大学,18p-TE-17
• [Presentation] アルコールCVD法による単層/多層グラフェン成長 (2010)
  • Author(s): 宮坂悠太, 松山明弘, 野木努, 中村篤志, 天明二郎
  • Organizer: 2010年春季応用物理学会講演会
  • Place of Presentation: 東海大学,19a-TE-6
• [Presentation] Zn(Mg, Cd)O混晶の励起子モデルによる光学特性解析 (2010)
  • Author(s): 山本兼司, 中村篤志, 天明二郎
  • Organizer: 2010年春季応用物理学会講演会
  • Place of Presentation: 東海大学,19p-TM-15
• [Presentation] Material and device aspects of RPE-MOCVD ZnO-based system (2009)
  • Author(s): J.Temmyo
  • Organizer: 33rd Workshop on Compound Semiconductor Deviceps and Integrated Circuits
  • Place of Presentation: Malaga, Spain
  • Year and Date: 2009-05-17
• [Presentation] Indium-doped Mg_xZn_<1-x>O films for ZnO-based heterojunction diodes (2009)
  • Author(s): 坪井貴子, 山本兼司, 中村篤志, 天明二郎
  • Organizer: 2009 SSDM
  • Place of Presentation: Sendai, 7P7.
• [Presentation] Blue-green PL emission from ZnCdO-based multiple quantum wells grown by RPE-MOCVD (2009)
  • Author(s): 山本兼司, 安達光彦, 俵毅彦, 後藤秀樹, 中村篤志, 天明二郎
  • Organizer: 14^<th> Int.Conf.II-VI Compound
  • Place of Presentation: St.Petersburg, Tu6p-36.
• [Presentation] Impact of acceptor states in Mg_xZn_<1-x>O Schottky photodiodes (2009)
  • Author(s): A.Hierro, G.Tabares, J.M.Ulla, E.Munoz, A.Nakamura, T.Hayashi, J.Temmyo
  • Organizer: 14^<th> Int.Conf.II-VI Compound
  • Place of Presentation: St.Petersburg, Tu6p-48.
• [Presentation] Schottky barrier contacts formed on polar-, nonpolar-Mg_xZn_<1-x>O film grown by remote-plasma-enhanced MOCVD (2009)
  • Author(s): A.Nakamura, H.Hierro, E.Munoz, J Temmyo
  • Organizer: 14^<th> Int.Conf.II-VI Compound
  • Place of Presentation: St.Petersburg, Tu6p-64.
• [Presentation] RPE-MOCVD grown ZnCuO films for green light emitting structures (2009)
  • Author(s): 胡博, 山本兼司, 中村篤志, 天明二郎
  • Organizer: 14^<th> Int.Conf.II-VI Compound
  • Place of Presentation: St.Petersburg, Tu6p-65.
• [Presentation] Carrier compensation by deep levels in a-plane Mg_xZn_<1-x>O Schottky photodiodes grown RPE-MOCVD (2009)
  • Author(s): A.Hierro, G.Tabares, J.M.Ulla, E.Munoz, A.Nakamura, T.Hayashi, J.Temmyo
  • Organizer: 2009EMRS Spring Meeting
  • Place of Presentation: Strasbourg, Symp F : 08June11.
• [Presentation] Responsitivity and transient response of non-polar Au-Mg_xZn_<1-x>O Schottky photodiodes (2009)
  • Author(s): G.Tabares, A.Hierro, J.M.Ulla, E.Munoz, A.Nakamura, T.Hayashi, J.Temmyo
  • Organizer: 2009EMRS Spring Meeting
  • Place of Presentation: Strasbourg, Symp F : 11June1327.
• [Presentation] Material and device aspects of RPE-MOCVD ZnO-based system (2009)
  • Author(s): 天明二郎
  • Organizer: 33^<rd> Workshop on Compound Semiconductor Devices and Integrated Circuits (33^<rd> WOCSDICE)
  • Place of Presentation: Malaga, Mon3-1.
• [Presentation] SiC薄膜成長と水素添加熱分解法によるSWNT/グラフェン形成 (2009)
  • Author(s): 天明二郎
  • Organizer: 第49回CVD研究会
  • Place of Presentation: 京都
• [Presentation] ZnCdO/ZnO多重量子構造の成長温度依存性 (2009)
  • Author(s): 山本兼司、金子寿、中村篤志、天明二郎
  • Organizer: 2009年秋季応用物理学会講演会
  • Place of Presentation: 富山大学,9a-J-11
• [Presentation] RPE-MOCVD法を用いたZnCuO薄膜の成長温度依存性 (2009)
  • Author(s): 金子寿、胡博、山本兼司、中村篤志、天明二郎
  • Organizer: 2009年秋季応用物理学会講演会
  • Place of Presentation: 富山大学,9p-J-7
• [Presentation] HW-CVD成長SiC薄膜の熱分解およびその膜厚依存性 (2009)
  • Author(s): 野木努, 小川泰弘, 中村篤志, 田中昭、天明二郎
  • Organizer: 2009年秋季応用物理学会講演会
  • Place of Presentation: 富山大学,11a-ZR-3
• [Presentation] 非極性面Mg_xZn_<1-x>O : Nキャリア濃度C-V評価 (2009)
  • Author(s): A.Nakamura, A.Hierro, E.Munoz, J.Temmyo
  • Organizer: 2009年秋季応用物理学会講演会
  • Place of Presentation: 富山大学,9a-J-8
• [Presentation] Cat-MOCVD法によるZnO系半導体結晶成長への展開 (2009)
  • Author(s): 中村篤志, 袴田靖文, 小川泰弘, 天明二郎
  • Organizer: 第6回Cat-CVD研究会
  • Place of Presentation: 金沢,37
• [Presentation] Carrier compensation in non-polar MgZnO Schottky diodes (2009)
  • Author(s): A.Nakamura, A.Hierro, E.Munoz, J.Temmyo
  • Organizer: 28^<th> Electronic Materials Symposium (EMS-28)
  • Place of Presentation: Laforet Biwako, A-2
• [Presentation] (2009)
  • Author(s): 山本兼司, 安達光彦, 俵毅彦, 後藤秀樹, 中村篤志, 天明二郎
  • Organizer: 28^<th> Electronic Materials Symposium (EMS-28)
  • Place of Presentation: Laforet Biwako, I-7
• [Presentation] 熱分解形成多層グラフェン膜におおけるSiC結晶性ならびに熱分解温度依存性 (2009)
  • Author(s): 小川泰弘, 柴田尚, 中村篤志, 田中昭, 天明二郎
  • Organizer: 2009春季応用物理学会講演会
  • Place of Presentation: 筑波,31P-TA-4
• [Presentation] Mg_xZn_<1-x>Oショットキーダイオードの作製とキャリア濃度評価 (2009)
  • Author(s): A.Nakamura, 坪井貴子, J.Temmyo, A.Hierro, E.Munoz
  • Organizer: 2009春季応用物理学会講演会
  • Place of Presentation: 筑波,31P-ZK-18
• [Presentation] Hot Wire-MOCVD法によるZnO薄膜の成長 (2009)
  • Author(s): 袴田靖文, 小川泰弘, 中村篤志, 天明二郎
  • Organizer: 2009春季応用物理学会講演会
  • Place of Presentation: 筑波,2a-ZK-3
• [Presentation] 横型反応管を用いたRPE-MOCVD法のZnO系薄膜膜厚分布 (2009)
  • Author(s): 岩間敬太, E.Hamid, 山本兼司, 中村篤志, 天明二郎
  • Organizer: 2009春季応用物理学会講演会
  • Place of Presentation: 筑波,2a-ZK-7
• [Presentation] 極性・非極性ZnCdO混晶のRPE-MOCVD成長 (2009)
  • Author(s): 山本兼司, 坪井貴子, 中村篤志, 天明二郎
  • Organizer: 2009春季応用物理学会講演会
  • Place of Presentation: 筑波,2p-ZK-8
• [Presentation] MgZnO : In薄膜の結晶表面形状と特性評価 (2008)
  • Author(s): 坪井貴子, 山本兼司, 中村篤志, 天明二郎
  • Organizer: 2008年春季応用物理学会講演会
  • Place of Presentation: 中部大学、春日井
  • Year and Date: 2008-09-04
• [Presentation] PL lifetime and potential fluctuation in ZnO-based alloy films (2008)
  • Author(s): 山本兼司, 大橋俊哉, 俵毅彦, 後藤秀樹, 中村篤志, 天明二郎
  • Organizer: 5^<th> Int.Workshop on ZnO amd related Materials
  • Place of Presentation: Ypsilanti, Michigan, 53 (oral).
• [Presentation] Zn_<1-x>Cu_xO films grown by RPE-MOCVD with Cu(dibm)_2 (2008)
  • Author(s): 胡博, 安達光彦, 青嶌剛嗣, 中村篤志, 天明二郎
  • Organizer: 40^<th> Int.Conf.Solid State Devices and Materials (SSDM2008)
  • Place of Presentation: Tsukuba, P-9-2 (poster).
• [Presentation] Multilayered graphene from SiC films via pyrolysis in vacuum (2008)
  • Author(s): 小川泰弘, 中村篤志, 田中昭, 天明二郎
  • Organizer: 40^<th> Int.Conf.Solid State Devices and Materials (SSDM2008)
  • Place of Presentation: Tsukuba, P-9-2(late news).
• [Presentation] ZnCuO混晶薄膜成長の原料キャリアガス依存性 (2008)
  • Author(s): 胡博, 安達光彦, 青嶌剛嗣, 中村篤志, 天明二郎
  • Organizer: 2008年秋季応用物理学会講演会
  • Place of Presentation: 中部大学,4p-CF-10
• [Presentation] Optical analysis of self-assembled ZnO nano-wires grown by RPE-MOCVD (2008)
  • Author(s): E.Hamid, 安達光彦, 中村篤志、天明二郎
  • Organizer: 2008年秋季応用物理学会講演会
  • Place of Presentation: 中部大学,4p-CF-11
• [Presentation] HW-CVD成長SiC薄膜の熱分解による多層グラフェン形成の試み (2008)
  • Author(s): 小川泰弘, 中村篤志, 田中昭, 天明二郎
  • Organizer: 2008年秋季応用物理学会講演会
  • Place of Presentation: 中部大学,3p-ZS-2
• [Presentation] a面サファイア基板上ZnCdO/ZnO多重量子井戸構造のRPE-MOCVD成長 (2008)
  • Author(s): 山本兼司, 安達光彦, 中村篤志, 天明二郎
  • Organizer: 2008年秋季応用物理学会講演会
  • Place of Presentation: 中部大学,3p-N-6
• [Presentation] Mg_xZn_<1-x>O : In薄膜の結晶表面形状と特性評価 (2008)
  • Author(s): 坪井貴子, 山本兼司, 中村篤志, 天明二郎
  • Organizer: 2008年秋季応用物理学会講演会
  • Place of Presentation: 中部大学,3p-N-17
• [Presentation] ZnO系薄膜過酸化水素処理ショットキーコンタクト形成の成長面方位依存性 (2008)
  • Author(s): 中村篤志, 林隆雄, 天明二郎
  • Organizer: 2008年秋季応用物理学会講演会
  • Place of Presentation: 中部大学,4a-N-2
• [Remarks] ホームページ等
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