| Budget Amount *help |
¥15,470,000 (Direct Cost: ¥11,900,000、Indirect Cost: ¥3,570,000)
Fiscal Year 2010: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2009: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2008: ¥11,960,000 (Direct Cost: ¥9,200,000、Indirect Cost: ¥2,760,000)
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| Research Abstract |
Investigations were performed to improve the performance of semiconductor nuclear radiation detectors that possess energy discrimination capability. These heterojunction diode type detectors are based on epitaxially grown thick CdTe layers on Si substrates. Efforts were made to improve the CdTe crystal quality and decrease the detector dark current noise by optimizing crystal growth parameters and annealing the grown crystals. We found the best conditions for the crystal growth and the annealing, which help to deactivate the crystal defects, and reduce the detector dark current. As a result, improvement of the detector performance was confirmed.
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