Investigating ways to improve the performance of semiconductor nuclear radiation detectors
| Project/Area Number |
20310095
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Social systems engineering/Safety system
|
|---|
| Research Institution | Nagoya Institute of Technology |
|---|
Principal Investigator |
NIRAULA Madan Nagoya Institute of Technology, 工学研究科, 准教授 (20345945)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
YASUDA Kazuhito 名古屋工業大学, 工学研究科, 教授 (60182333)
|
|---|
| Project Period (FY) |
2008 – 2010
|
| Project Status |
Completed (Fiscal Year 2010)
|
| Budget Amount *help |
¥15,470,000 (Direct Cost: ¥11,900,000、Indirect Cost: ¥3,570,000)
Fiscal Year 2010: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2009: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2008: ¥11,960,000 (Direct Cost: ¥9,200,000、Indirect Cost: ¥2,760,000)
|
|---|
| Keywords | 安全・セキュリティ / 放射線検出器 / テルル化カドミウム / ヘテロ接合ダイオード / エネルギー識別 / アニール効果 / エピタキシャル成長層 / 暗電流 / 画像検出器 / エピタキシャル成長 / ヘテロ接合ダイオー / 電極形成技術 |
|---|
| Research Abstract |
Investigations were performed to improve the performance of semiconductor nuclear radiation detectors that possess energy discrimination capability. These heterojunction diode type detectors are based on epitaxially grown thick CdTe layers on Si substrates. Efforts were made to improve the CdTe crystal quality and decrease the detector dark current noise by optimizing crystal growth parameters and annealing the grown crystals. We found the best conditions for the crystal growth and the annealing, which help to deactivate the crystal defects, and reduce the detector dark current. As a result, improvement of the detector performance was confirmed.
|
Report
(4 results)
Research Products
(43 results)
