Current-induced domain wall motion in ferromagnetic semiconductors
| Project/Area Number |
20360001
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥18,590,000 (Direct Cost: ¥14,300,000、Indirect Cost: ¥4,290,000)
Fiscal Year 2010: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2009: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2008: ¥9,750,000 (Direct Cost: ¥7,500,000、Indirect Cost: ¥2,250,000)
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| Keywords | スピントロニクス / 強磁性半導体 / 電流誘起磁壁移動 / 磁界誘起磁壁移動 / スピントルク / スピン流 / 結晶成長 |
|---|
| Research Abstract |
We have investigated the domain wall related phenomena in (Ga, Mn)As and found that
(1)Universality class of domain wall creep motion in (Ga, Mn)As is governed by the surface roughness
(2)Electromotive force can be induced by the domain wall motion, which is a reciprocal effect of the current induced domain wall motion.
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Report
(4 results)
Research Products
(15 results)
