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Current-induced domain wall motion in ferromagnetic semiconductors

Research Project

Project/Area Number 20360001
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionTohoku University

Principal Investigator

MATSUKURA Fumihiro  東北大学, 電気通信研究所, 准教授 (50261574)

Project Period (FY) 2008 – 2010
Project Status Completed (Fiscal Year 2010)
Budget Amount *help
¥18,590,000 (Direct Cost: ¥14,300,000、Indirect Cost: ¥4,290,000)
Fiscal Year 2010: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2009: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2008: ¥9,750,000 (Direct Cost: ¥7,500,000、Indirect Cost: ¥2,250,000)
Keywordsスピントロニクス / 強磁性半導体 / 電流誘起磁壁移動 / 磁界誘起磁壁移動 / スピントルク / スピン流 / 結晶成長
Research Abstract

We have investigated the domain wall related phenomena in (Ga, Mn)As and found that
(1)Universality class of domain wall creep motion in (Ga, Mn)As is governed by the surface roughness
(2)Electromotive force can be induced by the domain wall motion, which is a reciprocal effect of the current induced domain wall motion.

Report

(4 results)
  • 2010 Annual Research Report   Final Research Report ( PDF )
  • 2009 Annual Research Report
  • 2008 Annual Research Report
  • Research Products

    (15 results)

All 2011 2010 2009 2008

All Journal Article (4 results) (of which Peer Reviewed: 4 results) Presentation (11 results)

  • [Journal Article] Domain wall creep in (Ga, Mn)As2010

    • Author(s)
      A. Kanda, A. Suzuki, F. Matsukura, and H. Ohno
    • Journal Title

      Appl. Phys. Lett

      Volume: 97 Issue: 3 Pages: 32504-32504

    • DOI

      10.1063/1.3467048

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Domain wall creep in (Ga,Mn) As2010

    • Author(s)
      A.Kanda, A.Suzuki, F.Matsukura, H.Ohno
    • Journal Title

      Applied Physics Letters

      Volume: 97

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 強磁性半導体における磁壁の電流駆動2009

    • Author(s)
      千葉大地、山ノ内路彦、松倉文禮、大野英男
    • Journal Title

      まぐね

      Volume: 4(8) Pages: 390-295

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] 強磁性半導体における磁壁の電流駆動2009

    • Author(s)
      千葉大地・山ノ内路彦、松倉文礼、大野英男
    • Journal Title

      まぐね 4

      Pages: 390-395

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Presentation] Buffer layer dependence of magnetic domain wall creep in (Ga,Mn)As2011

    • Author(s)
      A.Suzuki, A.Kanda, F.Matsukura, H.Ohno
    • Organizer
      The 1st CSIS International Symposium on Spintronics-based VLSIs and The 7th RIEC International Workshop on Spintronics
    • Place of Presentation
      仙台
    • Year and Date
      2011-02-03
    • Related Report
      2010 Annual Research Report
  • [Presentation] Buffer layer dependence of magnetic domain wall creep in (Ga, Mn)As2011

    • Author(s)
      A. Suzuki, A. Kanda, F. Matsukura, and H. Ohno
    • Organizer
      The 1st CSIS International Symposium on Spintronics-based VLSIs and The 7th RIEC International Workshop on Spintronics
    • Place of Presentation
      Sendai
    • Related Report
      2010 Final Research Report
  • [Presentation] Asにおける電流誘起磁壁移動の膜厚依存性2010

    • Author(s)
      鈴木淳士、神田明典、松倉文禮、大野英男
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学文教キャンパス
    • Related Report
      2010 Final Research Report
  • [Presentation] Experimental aspects of carrier-induced ferromagnetic semiconductors2009

    • Author(s)
      F.Matsukura
    • Organizer
      5th Intl.School and Conf.on Spintronics and Quantum IT
    • Place of Presentation
      クラクフ市、ポーランド
    • Year and Date
      2009-07-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] (Ga, Mn)As中の磁壁の磁場誘起クリープ2009

    • Author(s)
      神田明典
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-30
    • Related Report
      2008 Annual Research Report
  • [Presentation] (Ga, Mn)As中の磁場誘起クリープのスケーリング指数2009

    • Author(s)
      神田明典
    • Organizer
      The 13th Symposium on the Physics and Application of Spin-Related Phenomena in Semiconductors
    • Place of Presentation
      東北大学
    • Year and Date
      2009-01-27
    • Related Report
      2008 Annual Research Report
  • [Presentation] As中の磁壁の磁場誘起クリープ2009

    • Author(s)
      神田明典、松倉文禮、大野英男
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Related Report
      2010 Final Research Report
  • [Presentation] As中の磁場誘起クリープのスケーリング指数2009

    • Author(s)
      神田明典、松倉文禮、大野英男
    • Organizer
      The 13th Symposium on the Physics and Application of Spin-Related Phenomena in Semiconductors
    • Place of Presentation
      東北大学電気通信研究所附属ナノ・スピン実験施設
    • Related Report
      2010 Final Research Report
  • [Presentation] Magnetic Domain Wall Dynamics in (Ga, Mn) As2008

    • Author(s)
      松倉文礼
    • Organizer
      1st Rennes-Sendai joint workshop on advanced materials and devices
    • Place of Presentation
      仏レンヌ
    • Year and Date
      2008-10-23
    • Related Report
      2008 Annual Research Report
  • [Presentation] Magnetic Domain Wall Dynamics in GaMnAs(招待講演)2008

    • Author(s)
      松倉文礼
    • Organizer
      International Conference on Solid State Devices and Materials
    • Place of Presentation
      つくば
    • Year and Date
      2008-09-26
    • Related Report
      2008 Annual Research Report
  • [Presentation] 強磁性半導体:その物性と電流による磁壁駆動2008

    • Author(s)
      大野英男、松倉文禮
    • Organizer
      未踏・ナノデバイスデクノロジ第151委員会第84回研究会
    • Place of Presentation
      東京工業大学大岡山キャンパス
    • Year and Date
      2008-04-24
    • Related Report
      2010 Final Research Report

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Published: 2008-04-01   Modified: 2016-04-21  

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