Fabrication of fluoride resonant tunneling devices on Si with stable electrical properties by using surface inactive layers
| Project/Area Number |
20360004
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
TSUTSUI Kazuo Tokyo Institute of Technology, 大学院・総合理工学研究科, 教授 (60188589)
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥17,420,000 (Direct Cost: ¥13,400,000、Indirect Cost: ¥4,020,000)
Fiscal Year 2010: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2009: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2008: ¥9,360,000 (Direct Cost: ¥7,200,000、Indirect Cost: ¥2,160,000)
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| Keywords | 弗化物 / ヘテロエピタキシー / 表面不活性 / シリコン / ゲルマニウム / シリサイド / 共鳴トンネル / 超薄膜 / ヘテロ構造 / 化学反応抑制 / バッファ層 / エピタキシャルシリサイド / ニッケルシリサイド / 電子デバイス / 量子井戸 / トンネル現象 |
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| Research Abstract |
For the resonant tunneling devices composed of ultra-thin fluoride multi layers fabricated on Si substrate, the strong chemical reactivity between Si and CdF_2 has been a significant problem. In this work, the inactive crystalline layers of germanium (Ge) or metal silcides were introduced at the interface between the fluoride layer and Si. This technique allowed the fluoride layers to be grown at higher temperature, which is a promising improvement for achieving device operation with good stability.
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Report
(4 results)
Research Products
(37 results)
