| Budget Amount *help |
¥18,590,000 (Direct Cost: ¥14,300,000、Indirect Cost: ¥4,290,000)
Fiscal Year 2010: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2009: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2008: ¥9,750,000 (Direct Cost: ¥7,500,000、Indirect Cost: ¥2,250,000)
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| Research Abstract |
Aluminum nitride (AlN) has attracted much attention as a material for deep-ultraviolet light emitting devices. Thermally stable structure of AlN is known to be wurtzite structure. On the other hand, AlN studied in this project has 4H structure. 4H-AlN can be obtained by isopolytypic growth on 4H-SiC. Thanks to isopolytypic growth, 4H-AlN grown on 4H-SiC shows excellent crystalline quality. In this study, growth of AlGaN alloy and AlGaN/AlN quantum well structures were studied. 4H-AlGaN/AlN quantum well structures were successfully grown on 4H-SiC (1-100). We revealed that growth of high-quality 4H-AlGaN on 4H-SiC (11-20) is impossible. We proposed 4H-GaN/AlN short-period super lattice structures instead of 4H-AlGaN. The 4H-GaN/AlN short-period super lattice structures were successfully grown on 4H-SiC (11-20).
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