Growth of aluminum nitride with a new crystal structure for deep-ultraviolet light emitting devices
| Project/Area Number |
20360008
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Kyoto University |
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Principal Investigator |
SUDA Jun Kyoto University, 大学院・工学研究科, 准教授 (00293887)
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥18,590,000 (Direct Cost: ¥14,300,000、Indirect Cost: ¥4,290,000)
Fiscal Year 2010: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2009: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2008: ¥9,750,000 (Direct Cost: ¥7,500,000、Indirect Cost: ¥2,250,000)
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| Keywords | 窒化物半導体 / 窒化アルミニウム / ポリタイプ / 炭化珪素 / エピタキシー / 深紫外発光素子 / 紫外線発光素子 |
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| Research Abstract |
Aluminum nitride (AlN) has attracted much attention as a material for deep-ultraviolet light emitting devices. Thermally stable structure of AlN is known to be wurtzite structure. On the other hand, AlN studied in this project has 4H structure. 4H-AlN can be obtained by isopolytypic growth on 4H-SiC. Thanks to isopolytypic growth, 4H-AlN grown on 4H-SiC shows excellent crystalline quality. In this study, growth of AlGaN alloy and AlGaN/AlN quantum well structures were studied. 4H-AlGaN/AlN quantum well structures were successfully grown on 4H-SiC (1-100). We revealed that growth of high-quality 4H-AlGaN on 4H-SiC (11-20) is impossible. We proposed 4H-GaN/AlN short-period super lattice structures instead of 4H-AlGaN. The 4H-GaN/AlN short-period super lattice structures were successfully grown on 4H-SiC (11-20).
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Report
(4 results)
Research Products
(31 results)
