Growth and properties of metastable cubic group III nitride semiconductors by developing a surface structure control method

• Project/Area Number: 20360011
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Doshisha University
• Principal Investigator: OHACHI Tadashi Doshisha University, 理工学部, 教授 (40066270)
• Co-Investigator(Kenkyū-buntansha): KANGAWA Yoshihiro 九州大学, 応用力学研究所, 准教授 (90327320)
• Project Period (FY): 2008 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000); Fiscal Year 2010: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000); Fiscal Year 2009: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000); Fiscal Year 2008: ¥12,350,000 (Direct Cost: ¥9,500,000、Indirect Cost: ¥2,850,000)
• Keywords: 結晶成長 / PA-MBE / エピタキシャル / 電子・電気材料 / 半導体物性 / 原子フラックス測定 / AlNダブルバッファー層 / AM-MEE成長法 / 窒化シリコン / III族窒化物 / ヘテロエピタキシャル成長 / AlN / 界面反応エピタキシャル法

Research Abstract

Preparation of an AlN double buffer layer (DBL) on a β-Si_3N_4 layer by the interfacial reaction between Al and the β-Si_3N_4 layer was developed by controlling two electrical discharge modes of the high frequency induction coupling electrical discharge in molecular-beam epitaxy (MBE) method. Activity modulation migration enhanced (AM-MEE) method was established as a continuous MBE method by preparing the AlN/β-Si3N4/Si DBL layer firstly. In addition, the prospect to the growth of thermodynamically metastable cubic crystals, AlN and GaN epitaxial films on Si substrates was able to be obtained by the AM-MEE method.

Research Products

• [Journal Article] in-situ measurement of adsorbed nitrogen atoms for PA-MBE growth of group III nitrides on Si (2011)
  • Author(s): Tadashi Ohachi, Nobuhiko Yamabe, Yuka Yamamoto, Motoi Wada, Osamu Ariyada
  • Journal Title: Phys.stat.sol. C8 Pages: 1491-1494
  • Peer Reviewed
• [Journal Article] Epitaxial growth of β-Si_3N_4 by the nitridation of Si with adsorbed N atoms for interface reaction epitaxy of double buffer AlN(0001)/β-Si_3N_4/Si(111) (2011)
  • Author(s): Nobuhiko Yamabe, Yuka Yamamoto, Tadashi Ohachi
  • Journal Title: Phys.stat.sol. C8 Pages: 1552-1555
  • Peer Reviewed
• [Journal Article] Interface roughness of double buffer layer of GaN film grown on Si(111) substrate using GIXR analysis (2011)
  • Author(s): Yuka Yamamoto, Nobuhiko Yamabe, Tadashi Ohachi
  • Journal Title: J.Cryst.Growth 318 Pages: 474-478
  • Peer Reviewed
• [Journal Article] Control of active nitrogen species using by RF-MBE nitrides growth on Si (2011)
  • Author(s): Tadashi Ohachi, Nobuhiko Yamabe, Yuka Yamamoto, Motoi Wada, Osamu Ariyada
  • Journal Title: J.Cryst.Growth 318 Pages: 468-473
  • Peer Reviewed
• [Journal Article] Improvement of Plasma-Assisted Molecular Beam Epitaxial Growth of Group III Nitrides on Si Controlling Radio Frequency Discharge Modes and Exposure of Nitrogen Flux (2011)
  • Author(s): Tadashi Ohachia, Nobuhiko Yamabea, Motoi Wada, Osamu Ariyada
  • Journal Title: Jpn.J.Appl.Phys. 50
  • Peer Reviewed
• [Journal Article] Improvement of Plasma-Assisted Molecular Beam Epitaxial Growth of Group III Nitrides on Si Controlling Radio Frequency Discharge Modes and Exposure of Nitrogen Flux (2011)
  • Author(s): Tadashi Ohachia, Nobuhiko Yamabea, Motoi Wada, Osamu Ariyada
  • Journal Title: Jpn.J.Appl.Phys. Volume: 50
  • Peer Reviewed
• [Journal Article] Interface roughness of double buffer layer of GaN film grown on Si(111) substrate using GIXR analysis (2011)
  • Author(s): Yuka Yamamoto, Nobuhiko Yamabe, Tadashi Ohachi
  • Journal Title: J.Cryst.Growth Volume: 318 Pages: 474-478
  • Peer Reviewed
• [Journal Article] Control of active nitrogen species using by RF-MBE nitrides growth on Si (2011)
  • Author(s): Tadashi Ohachi, Nobuhiko Yamabe, Yuka Yamamoto, Motoi Wada, Osamu Ariyad
  • Journal Title: J.Cryst.Growth Volume: 318 Pages: 468-473
  • Peer Reviewed
• [Journal Article] in-situ measurement of adsorbed nitrogen atoms for PA-MBE growth of group III nitrides on Si (2011)
  • Author(s): Tadashi Ohachi, Nobuhiko Yamabe, Yuka Yamamoto, Motoi Wada, Osamu Ariyad
  • Journal Title: Phys.stat.sol. Volume: C8 Pages: 1491-1494
  • Peer Reviewed
• [Journal Article] Epitaxial growth of β-Si_3N_4 by the nitridation of Si with adsorbed N atoms for interface reaction epitaxy of double buffer AlN (0001)/β-Si_3N_4/Si(111) (2011)
  • Author(s): Nobuhiko Yamabe, Yuka Yamamoto, Tadashi Ohachi
  • Journal Title: Phys.stat.sol. Volume: C8 Pages: 1552-1555
  • Peer Reviewed
• [Journal Article] Possibility of AlN growth using Li-Al-N solvent (2010)
  • Author(s): Y.Kangawa, K.Kakimoto
  • Journal Title: Journal of Crystal Growth 312 Pages: 2569-2573
  • Peer Reviewed
• [Journal Article] Possibility of AlN growth using Li-Al-N solvent (2010)
  • Author(s): Y.Kangawa, K.Kakimoto
  • Journal Title: Journal of Crystal Growth Volume: 312 Pages: 2569-2573
  • Peer Reviewed
• [Journal Article] Possibility of AlN growth using Li- Al- N solvent (2010)
  • Author(s): Y.Kangawa
  • Journal Title: J.Crystal Growth (掲載確定)
  • Peer Reviewed
• [Journal Article] Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates (2009)
  • Author(s): T.Ohachi, H.Shimomura, T.Shimamura, O.Ariyada, M.Wada
  • Journal Title: J.Crystal Growth 311 Pages: 2987-2991
  • Peer Reviewed
• [Journal Article] Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates (2009)
  • Author(s): T.Ohachi
  • Journal Title: J.Crystal Growth 311 Pages: 2987-2991
  • Peer Reviewed
• [Journal Article] Nitrdation of Si(111) for growth of 2H-AlN(0001)/β-Si3N4/Si(111)structure (2009)
  • Author(s): N.Yamabe
  • Journal Title: J.Crystal Growth 311 Pages: 3049-3053
  • Peer Reviewed
• [Presentation] Crack in HVPE grown 2H-AlN films on AlN templatesprepared by PA-MBE using AM-MEE (2011)
  • Author(s): T.Ohachi, N.Yamabe, Y.Yamamoto, H.Murakami, Y.Kumagai, A.Koukitu
  • Organizer: 7th International Workshop on Nitride Semiconductors (IWBNS7)
  • Place of Presentation: Koyasan University, Japan
  • Year and Date: 2011-03-18
• [Presentation] Two-phase-solution growth of AlN on self-nucleated AlN crystal (2011)
  • Author(s): Y. Kangawa,, B.M.Epelbaum, K.Kakimoto
  • Organizer: 7th International Workshop on Bulk Nitrides Semiconductors (IWBNS-7)
  • Place of Presentation: Koyasan University, Japan
  • Year and Date: 2011-03-18
• [Presentation] Crack in HVPE grown 2H-AlN films on AlN templatesprepa red by PA-MBE using AM-MEE (2011)
  • Author(s): T.Ohachi, N.Yamabe, Y.Yamamoto, H.Murakami, Y.Kumagai, A.Koukitu
  • Organizer: 7th International Workshop on Nitride Semiconductors (IWBNS7)
  • Place of Presentation: 高野山大学
  • Year and Date: 2011-03-18
• [Presentation] Two-phase-solution growth of AlN on self-nucleated AlN crystal (2011)
  • Author(s): Y.Kangawa, B.M.Epelbaum, K.Kakimoto
  • Organizer: 7th International Workshop on Bulk Nitrides Semiconductors (IWBNS-7)
  • Place of Presentation: Koyasan, Japan(招待講演)
  • Year and Date: 2011-03-18
• [Presentation] AlNバルク成長に向けた2相溶液成長法の提案 (2011)
  • Author(s): 寒川義裕、土岐隆太郎、屋山巴、柿本浩一
  • Organizer: 2011年春季 第58回応用物理学関係連合講演会
  • Place of Presentation: (東日本大震災のため講演会は中止、アブストラクト発表のみ)
  • Year and Date: 2011-03-15
• [Presentation] AIN バルク成長に向けた2相溶液成長法の提案 (2011)
  • Author(s): 寒川義裕、土岐隆太郎、屋山巴、柿本浩一
  • Organizer: 2011年春季 第58回応用物理学関係連合講演会
  • Place of Presentation: 東日本大震災のため講演会は中止、アブストラクト発表のみ
  • Year and Date: 2011-03-15
• [Presentation] Parallel mesh electrode to monitor nitrogen atoms for PA-MBE (2011)
  • Author(s): Tadashi Ohachi, Nobuhiko Yamabe, Motoi Wada, Osamu Ariyada
  • Organizer: ISPlasma2011
  • Place of Presentation: 名古屋工業大学
  • Year and Date: 2011-03-07
• [Presentation] PA-MBEによるSi上へのAlN、GaN膜ヘテロエピタキシャル成長 -窒素原子源、界面反応エピタキシー、活性度変調マイグレーションエンハンストエピタキシー- (2010)
  • Author(s): 大鉢忠
  • Organizer: 「結晶成長の数理」第5回研究会
  • Place of Presentation: 学習院大学(招待講演)
  • Year and Date: 2010-12-24
• [Presentation] Control of active nitrogen species using by RF-MBE nitrides growth on Si (2010)
  • Author(s): Tadashi Ohachi, Nobuhiko Yamabe, Yuka Yamamoto, Motoi Wada, Osamu Ariyada
  • Organizer: The16th International Conference on Crystal Groqwth (ICCG-16)
  • Place of Presentation: Beijing International Convention Center, Beijing, China
  • Year and Date: 2010-08-09
• [Presentation] Control of active nitrogen species using by RF-MBE nitrides growth on Si (2010)
  • Author(s): Tadashi Ohachi, Nobuhiko Yamabe, Yuka Yamamoto, Motoi Wada, Osamu Ariyada
  • Organizer: The 16th International Conference on Crystal Groqwth( ICCG-16)
  • Place of Presentation: Beijing International Convention Center, Beijing, China
  • Year and Date: 2010-08-09
• [Presentation] Polarity of AlN and GaN films grown by RF-MBE on double buffer AlN(0001)/β-Si3N4/Si(111) (2010)
  • Author(s): Nobuhiko Yamabe, Yuka Yamamoto, Tadashi Ohachi
  • Organizer: The 16th International Conference on Crystal Groqwth( ICCG-16)
  • Place of Presentation: Beijing International Convention Center, Beijing, China
  • Year and Date: 2010-08-09
• [Presentation] Interface roughness of double buffer layer of GaN film grown on Si(111) substrate using GIXR analysis (2010)
  • Author(s): Yuka Yamamoto, Nobuhiko Yamabe, Tadashi Ohachi
  • Organizer: The 16th International Conference on Crystal Groqwth( ICCG-16)
  • Place of Presentation: Beijing International Convention Center, Beijing, China
  • Year and Date: 2010-08-09
• [Presentation] Differential thermal analysis of Li3N-Al pseudobinary system for AlN growth (2010)
  • Author(s): T.Yayama, Y.Kangawa, K.Kakimoto
  • Organizer: The 16th. International Conference on Crystal Growth (ICCG-16)
  • Place of Presentation: Beijing, China
  • Year and Date: 2010-08-09
• [Presentation] Nitridation of Si and activity modulation of nitrogen atoms_ for growth of group III nitrides on Si using PA-MBE (2010)
  • Author(s): 大鉢忠, Nobuhiko Yamabe, Yuka Yamamoto, Motoi Wada, Osamu Ariyada
  • Organizer: The 14th International Summer School on Crystal Growth (ISSCG-14)
  • Place of Presentation: Dalian International Finance Conference Center, Dalian, China
  • Year and Date: 2010-08-01
• [Presentation] Nitridation of Si and activity modulation of nitrogen atoms for growth of group III nitrides on Si using PA-MBE (2010)
  • Author(s): Tadashi Ohachi, Nobuhiko Yamabe, Yuka Yamamoto, Motoi Wada, Osamu Ariyada
  • Organizer: The 14th International Summer School on Crystal Growth (ISSCG-14)
  • Place of Presentation: Dalian International Finance Conference Center, Dalian, China
  • Year and Date: 2010-08-01
• [Presentation] AlN成長に向けたLi3N-Al擬二元系状態図 (2010)
  • Author(s): 屋山巴, 寒川義裕, 柿本浩一
  • Organizer: 第29回電子材料シンポジウム
  • Place of Presentation: ラフォーレ修善寺
  • Year and Date: 2010-07-15
• [Presentation] in-situ measurement of adsorbed nitrogen atoms for RF-MBE growth of group III nitrides on Si (2010)
  • Author(s): Tadashi Ohachi, Nobuhiko Yamabe, Yuka Yamamoto, Motoi Wada, Osamu Ariyada
  • Organizer: The third International Symposium on Growth of III-Nitrides
  • Place of Presentation: Montpellier, France
  • Year and Date: 2010-07-05
• [Presentation] Epitaxial growth of β-Si3N4 by the nitridation of Si by adsorbed N atoms or interface reaction epitaxy of double buffer AlN(0001)/β-Si3N4/Si(111) structure (2010)
  • Author(s): Nobuhiko Yamabe, Yuka Yamamoto, Tadashi Ohachi
  • Organizer: The third International Symposium on Growth of III-Nitrides
  • Place of Presentation: Montpellier, France
  • Year and Date: 2010-07-05
• [Presentation] Calculation of Phase Diagrams of Li3N-Al pseudo binary system for AlN Growth (2010)
  • Author(s): T.Yayama, Y.Kangawa, K.Kakimoto
  • Organizer: The 3rd International Symposium on Growth of III-Nitride 2010 (ISGN-3)
  • Place of Presentation: Montpellier, France
  • Year and Date: 2010-07-04
• [Presentation] RF-MBEプラズマ窒素源の窒素原子フラックスその場計測 (2010)
  • Author(s): 大鉢忠,山邊信彦,山本由香,和田元,有屋田修
  • Organizer: 第2回窒化物半導体結晶成長講演会
  • Place of Presentation: 三重大学
  • Year and Date: 2010-05-14
• [Presentation] Si(111)上の吸着窒素原子によるβ-Si3N4成長とAl照射による界面反応エピタキシーAlN成長 (2010)
  • Author(s): 山邊信彦, 山本由香, 大鉢忠
  • Organizer: 第2回窒化物半導体結晶成長講演会
  • Place of Presentation: 三重大学
  • Year and Date: 2010-05-14
• [Presentation] AlN溶液成長に向けたLi3N-Al擬二元系状態図解析 (2010)
  • Author(s): 屋山巴, 寒川義裕, 柿本浩一
  • Organizer: 2010年第2回窒化物半導体結晶成長講演会
  • Place of Presentation: 三重大学
  • Year and Date: 2010-05-14
• [Presentation] RF-MBEプラズマ窒素源の窒素原子フラックスその場計測 (2010)
  • Author(s): 大鉢忠
  • Organizer: 第2回窒化物半導体結晶成長講演会
  • Place of Presentation: 三重大学(津市)
  • Year and Date: 2010-05-14
• [Presentation] Si(111)上の吸着窒素原子によるβ-Si3N4成長とAl照射による界面反応エピタキシーAlN成長 (2010)
  • Author(s): 大鉢忠
  • Organizer: 第2回窒化物半導体結晶成長講演会
  • Place of Presentation: 三重大学(津市)
  • Year and Date: 2010-05-14
• [Presentation] RF-MBEプラズマ窒素源の窒素原子フラックスその場計測 (2010)
  • Author(s): 大鉢忠
  • Organizer: 第65回応用物理学関係連合講演会
  • Place of Presentation: 東海大学湘南学舎(平塚市)
  • Year and Date: 2010-03-18
• [Presentation] RF-MBE成長用2H-AlN/β-Si3N4/Si(111)の界面反応エピタキシー (2010)
  • Author(s): 大鉢忠
  • Organizer: 第65回応用物理学関係連合講演会
  • Place of Presentation: 東海大学湘南学舎(平塚市)
  • Year and Date: 2010-03-18
• [Presentation] RF nitrogen source for MBE growth of group III nitrides on Si and its application for AM-MEE (2010)
  • Author(s): T.Ohachi
  • Organizer: Interntional Symposium of Plasma 2010
  • Place of Presentation: 名城大学(名古屋市)
  • Year and Date: 2010-03-09
• [Presentation] RF-MBE growth of group III nitrides on Si using activity modulation migration enhanced epitaxy (2009)
  • Author(s): T.Ohachi
  • Organizer: The 15th Chinese Conference on Crystal Growth(CCCG-15)
  • Place of Presentation: 寧波大学(中国)
  • Year and Date: 2009-11-17
• [Presentation] RF-MBEプラズマ窒素源の活性度変調と窒素原子フラックス計測 (2009)
  • Author(s): 大鉢忠
  • Organizer: 第39回結晶成長国内会議
  • Place of Presentation: 名城大学(名古屋市)
  • Year and Date: 2009-09-13
• [Presentation] 2H-AlN/β-Si3N4/Si(111)の界面反応エピタキシーとSi(111)上III族窒化物MBE成長 (2009)
  • Author(s): 大鉢忠
  • Organizer: 第39回結晶成長国内会議
  • Place of Presentation: 名城大学(名古屋市)
  • Year and Date: 2009-09-13
• [Presentation] RF-MBE法によるSi(111)基板上の組成連続変化AlGaN層を用いた六方晶GaNの活性度変調MEE成長 (2009)
  • Author(s): 大鉢忠
  • Organizer: 第38回結晶成長国内会議
  • Place of Presentation: 名城大学(名古屋市)
  • Year and Date: 2009-09-13
• [Presentation] Growth of 2H-AlN films on Si(111)grown by RF-MBE using an interface reaction epitaxy and AM-MEE for HVPE growth (2009)
  • Author(s): T.Ohachi
  • Organizer: The 6^<th> International Workshop of Bulk Nitride(IWBNS-VI)
  • Place of Presentation: Galindia Mazurski Eden, Poland
  • Year and Date: 2009-08-27
• [Presentation] (招待講演)Possibility of AlN growth using Li-Al-N solvent (2009)
  • Author(s): Y.Kangawa
  • Organizer: 6th International Workshop on Bulk Nitride
  • Place of Presentation: Galindia Mazurski Eden, Poland
  • Year and Date: 2009-08-26
• [Presentation] Si(111)基板上β-Si3N4へのAl照射による2H-AlN(0001)テンプレート作製とAlN表面構造 (2009)
  • Author(s): 大鉢忠
  • Organizer: 第53回マテリアルズ・テーラリング研究会
  • Place of Presentation: 加藤科学振興会 軽井沢研修所
  • Year and Date: 2009-07-31
• [Presentation] RF-MBE growth of group III nitrides on Si (2009)
  • Author(s): T.Ohachi
  • Organizer: 2009 Japan-China Crystal Grows and Crystal Technology Symposium
  • Place of Presentation: 大阪大学銀杏会館(吹田市)
  • Year and Date: 2009-07-22
• [Presentation] Microstructures in AlN/sapphire grown by vapor phase epitaxy using Al and Li_3N (2009)
  • Author(s): Y.Kangawa
  • Organizer: 第28回電子材料シンポジウム
  • Place of Presentation: ラフォーレ琵琶湖(守山市)
  • Year and Date: 2009-07-08
• [Presentation] RF-MBE法により成長させたSi基板上の立方晶と六方晶GaNの混在比評価 (2009)
  • Author(s): 大鉢忠
  • Organizer: 日本結晶成長学会ナノエピ分科会 第一回窒化物半導体結晶成長講演会
  • Place of Presentation: 東京農工大学(小金井市)
  • Year and Date: 2009-05-15
• [Presentation] β-Si3N4へのAl照射による反応性エピタキシャルAlNテンプレート成長とAM-MEE法による2H-AlN膜成長 (2009)
  • Author(s): 大鉢忠
  • Organizer: 日本結晶成長学会ナノエピ分科会 第一回窒化物半導体結晶成長講演会
  • Place of Presentation: 東京農工大学(小金井市)
  • Year and Date: 2009-05-15
• [Presentation] Li_3Nを窒素源とする気相成長により作製したAlN/sapphireの微細組織観察 (2009)
  • Author(s): 寒川義裕
  • Organizer: 2009年春季第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学(つくば市)
  • Year and Date: 2009-04-01
• [Presentation] RF-MBEにおけるSi (111)上2H-AIN (0001)用β-Si3N4窒化膜成長 (2009)
  • Author(s): 大鉢忠
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: つくば市
  • Year and Date: 2009-03-30
• [Presentation] Si(111)基板上β-Si3N4へのA1照射による2H-A1N(0001)テンプレート作製とAIN表面構造 (2009)
  • Author(s): 大鉢忠
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: つくば市
  • Year and Date: 2009-03-30
• [Presentation] Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates (2008)
  • Author(s): T. Ohachi
  • Organizer: 5th Int. Symp. of Electrochemical Processing of Tailored Materials (EPTM2008)
  • Place of Presentation: Nagoya
  • Year and Date: 2008-12-10
• [Presentation] 窒素活性度変調(Activity Modulation, AM)法によるSi窒化とSi上のIII族窒化物MBE成長 (2008)
  • Author(s): 大鉢忠
  • Organizer: 第38回結晶成長国内会議
  • Place of Presentation: 仙台市
  • Year and Date: 2008-09-11
• [Presentation] RF-MBE法による窒素活性度変調窒化法を用いたSi (111)窒化膜上のAIN膜成長 (2008)
  • Author(s): 大鉢忠
  • Organizer: 第38回結晶成長国内会議
  • Place of Presentation: 仙台市
  • Year and Date: 2008-09-11
• [Presentation] RF-MBE法によるSi (lll)基板上の組成連続変化AlGaN層を用いた六方晶GaNの活性度変調MEE成長 (2008)
  • Author(s): 大鉢忠
  • Organizer: 第38回結晶成長国内会議
  • Place of Presentation: 仙台市
  • Year and Date: 2008-09-11
• [Presentation] RF-MBE法により成長させたSi基板上の立方晶と六方晶GaNの混在比評価 (2008)
  • Author(s): 大鉢忠
  • Organizer: 第38回結晶成長国内会議
  • Place of Presentation: 仙台市
  • Year and Date: 2008-09-11
• [Presentation] AlN and GaN hetero epitaxy on Si substrate using activity modulation migration enhanced MBE (2008)
  • Author(s): T. Ohachi
  • Organizer: UCr2008 "21st Congress and General Assembly of the International Union of Crystallography
  • Place of Presentation: Osaka
  • Year and Date: 2008-08-23
• [Presentation] Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates (2008)
  • Author(s): T. Ohachi
  • Organizer: The second International Symposium of Growth of Nitrides
  • Place of Presentation: Izu
  • Year and Date: 2008-07-06
• [Presentation] Nitrdation of Si(lll) for growth of 2H-AlN(0001)/β-Si3N4/Si (lll) structure (2008)
  • Author(s): T. Ohachi
  • Organizer: The second International Symposium of Growth of Nitrides
  • Place of Presentation: Izu
  • Year and Date: 2008-07-06
• [Presentation] Activity Modulation Migration Enhanced MBE to grow GaN and AlN on Si substrates (2008)
  • Author(s): T. Ohachi
  • Organizer: The 4th Asian Conference on Crystal Growth and Crystal Technology
  • Place of Presentation: Sendai
  • Year and Date: 2008-05-21
• [Patent(Industrial Property Rights)] 原子フラックス測定装置 (2010)
  • Inventor(s): 大鉢忠、和田元、有屋田修、山邊信彦
  • Industrial Property Rights Holder: 大鉢忠、和田元、有屋田修、山邊信彦
  • Industrial Property Number: 2010-287599
  • Filing Date: 2010-12-24
• [Patent(Industrial Property Rights)] 原子フラックス測定装置 (2010)
  • Inventor(s): 大鉢忠、和田元、有屋田修、山邊信彦
  • Industrial Property Rights Holder: 大鉢忠、和田元、有屋田修、山邊信彦
  • Industrial Property Number: 2010-152658
  • Filing Date: 2010-07-05
• [Patent(Industrial Property Rights)] 原子フラックス測定装置 (2009)
  • Inventor(s): 大鉢忠、和田元、有屋田修
  • Industrial Property Rights Holder: 大鉢忠、和田元、有屋田修
  • Patent Publication Number: 2009-146755
  • Filing Date: 2009-07-02
• [Patent(Industrial Property Rights)] シリコン基板上にSi_3N_4へテロエピタキシャルバッファ層を有する窒化シリコン基板の作製方法および装置 (2009)
  • Inventor(s): 大鉢忠、和田元、有屋田修、山邊信彦
  • Industrial Property Rights Holder: 大鉢忠、和田元、有屋田修、山邊信彦
  • Industrial Property Number: 2009-079062
  • Filing Date: 2009-03-27
• [Patent(Industrial Property Rights)] 特許願 (2009)
  • Inventor(s): 大鉢忠, 他3名
  • Industrial Property Rights Holder: 大鉢忠, 他3名
  • Industrial Property Number: 2009-079602
  • Filing Date: 2009-03-27