Development and Application of a thin film growth method called nano-channel hetero-epitaxy

• Project/Area Number: 20360015
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: The University of Tokyo
• Principal Investigator: ICHIKAWA Masakazu The University of Tokyo, 大学院・新領域創成科学研究科, 特任教授 (20343147)
• Co-Investigator(Kenkyū-buntansha): NAKAMURA Yoshiaki 大阪大学, 大学院・基礎工学研究科, 准教授 (60345105)
• Project Period (FY): 2008 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥18,720,000 (Direct Cost: ¥14,400,000、Indirect Cost: ¥4,320,000); Fiscal Year 2010: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000); Fiscal Year 2009: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000); Fiscal Year 2008: ¥10,790,000 (Direct Cost: ¥8,300,000、Indirect Cost: ¥2,490,000)
• Keywords: ナノ材料 / 薄膜 / 量子ドット / シリコン / 半導体物性 / 表面・界面物性 / 光物性 / 化合物半導体 / ゲルマニウム

Research Abstract

In order to integrate Si optical devices with Si electrical devices, we have developed a hetero-epitaxial growth method called nano-channel hetero-epitaxy in which ultrahigh density nanodots formed on ultrathin SiO2-covered Si substrates are used as seed crystals to grow hetero-thin films with good crystalline qualities on Si substrates. We have grown Ge, GeSn, GaSb and AlGaSb films with good crystalline qualities on Si substrates and investigated their crystalline and light-emitting properties.

Research Products

• [Journal Article] Nanocontact heteroepitaxy of thin GaSb and AlGaSb films on Si substrates using ultrahigh-density nanodot seeds (2011)
  • Author(s): Y.Nakamura, T.Miwa, M.Ichikawa
  • Journal Title: Nanotechnology 印刷中(掲載確定)
  • Peer Reviewed
• [Journal Article] Theory of localized plasmons for metal nanostructures in random-phase approximation (2011)
  • Author(s): 市川昌和
  • Journal Title: Journal of the Physical Society of Japan 80巻
  • NAID: 40018787421
  • Peer Reviewed
• [Journal Article] Formation and Magnetic Properties of Ultrahigh Density Fe_3Si Nanodots Epitaxially Grown on Si(111) Substrates Covered with Ultrathin SiO_2 Films (2011)
  • Author(s): Y.Nakamura, S.Amari, S.-P.Cho, N.Tanaka, M.Ichikawa
  • Journal Title: Japanese Journal of Applied Physics 50巻
  • Peer Reviewed
• [Journal Article] Formation and Magnetic Properties of Ultrahigh Density Fe_3Si Nanodots Epitaxially Grown on Si(111) Substrates Covered with Ultrathin SiO_2 Films (2011)
  • Author(s): Y.Nakamura, S.Amari, S.-P.Cho, N.Tanaka, M.Ichikawa
  • Journal Title: Japanese Journal of Applied Physics Volume: 50
  • Peer Reviewed
• [Journal Article] Theory of localized plasmons for metal nanostructures in random-phase approximation (2011)
  • Author(s): M.Ichikawa
  • Journal Title: Journal of the Physical Society of Japan. Volume: 80
  • NAID: 40018787421
  • Peer Reviewed
• [Journal Article] Nanocontact heteroepitaxy of thin GaSb and AlGaSb films on Si substrates using ultrahigh-density nanodot seeds (2011)
  • Author(s): Y.Nakamura, T.Miwa, M.Ichikawa
  • Journal Title: Nanotechnology Volume: (印刷中)(掲載確定)
  • Peer Reviewed
• [Journal Article] 極薄Si酸化膜を用いたエピタキシャル量子ドット二次元ナノ配列構造の自己組織化と自己修復 (2010)
  • Author(s): 中村芳明、村山昭之、渡邉亮子、彌田智一、市川昌和
  • Journal Title: 表面科学 31巻 Pages: 626-631
  • NAID: 10027573827
  • Peer Reviewed
• [Journal Article] Self-organized formation and self-repair of a two-dimensional nanoarray of Ge quantum dots epitaxially grown on ultrathin SiO_2-covered Si substrates (2010)
  • Author(s): Y.Nakamura, A.Murayama, R.Watanabe, T.Iyoda, M.Ichikawa
  • Journal Title: Nanotechnology 21巻
  • Peer Reviewed
• [Journal Article] 1.5μm-1.6μm Photoluminescence of Silicon Layers with a High Density of Lattice Defects (2010)
  • Author(s): A.A.Shklyaev, A.V.Latyshev, M.Ichikawa
  • Journal Title: Semiconductors 44巻 Pages: 432-437
  • Peer Reviewed
• [Journal Article] 極薄Si酸化膜を用いたエピタキシャル量子ドット二次元ナノ配列構造の自己組織と自己修復 (2010)
  • Author(s): 中村芳明、村山昭之、渡邉亮子、彌田智一、市川昌和
  • Journal Title: 表面科学 Volume: 31 Pages: 626-631
  • Peer Reviewed
• [Journal Article] 1.5μm-1.6μm Photoluminescence of Silicon Layers with a High Density of Lattice Defects (2010)
  • Author(s): A.A. Shklyaev, A.V. Latyshev, M.Ichikawa
  • Journal Title: Semiconductors 44 Pages: 432-437
  • Peer Reviewed
• [Journal Article] Self-organized formation and self-repair of a two-dimensional nanoarray of Ge quantum dots epitaxially grown on ultrathin SiO_2-covered Si substrates (2010)
  • Author(s): Y.Nakamura, A.Murayama, R.Watanabe, T.Iyoda, M.Ichikawa
  • Journal Title: Nanotechnology 21
  • Peer Reviewed
• [Journal Article] Scanning tunneling microscope-cathodoluminescence measurement of the GaAs/AlGaAs heterostructure (2009)
  • Author(s): K.Watanabe, Y.Nakamura, M.Ichikawa, S.Kuboya, R.Katayama, K.Onabe
  • Journal Title: Jouranal of Vacuum Science & Technology B27巻 Pages: 1874-1880
  • Peer Reviewed
• [Journal Article] Photoluminescence from Si-capped GeSn nanodots on Si substrates formed using an ultrathin SiO_2 film technique (2009)
  • Author(s): Y.Nakamura,, N.Fujinoki, M.Ichikawa
  • Journal Title: 106巻
  • Peer Reviewed
• [Journal Article] Opto-electronic properties of Ge and Si related nanostructures on ultrathin Si oxide covered Si surfaces (2009)
  • Author(s): M.Ichikawa, Y.Nakamura, A.A.Shklyaev
  • Journal Title: Materials Research Society Symposium Proceedings 1145巻
  • Peer Reviewed
• [Journal Article] Fourier-transform photoabsorption spectroscopy of quantum-confinement effects in individual GeSn nanodots (2009)
  • Author(s): N.Naruse, Y.Mera, Y.Nakamura, M.Ichikawa, K.Maeda
  • Journal Title: Applied Physics Letters 94巻
  • Peer Reviewed
• [Journal Article] Defect-related light emission in the 1.4-1.7μm range from Si layers at room temperature (2009)
  • Author(s): A.A.Shklyaev, Y.Nakamura, F.N.Dultsev, M.Ichikawa
  • Journal Title: Journal of Applied Physics 105巻
  • Peer Reviewed
• [Journal Article] Formation and optical properties of GaSb quantum dots epitaxially grown on Si substrates using an ultrathin SiO_2 film technique (2009)
  • Author(s): Y.Nakamura,, T.Sugimoto, M.Ichikawa
  • Journal Title: Journal of Applied Physics 105巻
  • Peer Reviewed
• [Journal Article] Fourier-transform photoabsorption spectroscopy of quantum-confinement effects in individual GeSn nanodots (2009)
  • Author(s): N.Naruse, Y.Mera, Y.Nakamura, M Ichikawa, K Maeda.
  • Journal Title: Applied Physics Letters 94
  • Peer Reviewed
• [Journal Article] Opto-electronic properties of Ge and Si related nanostructures on ultrathin Sioxide covered Si surfaces (2009)
  • Author(s): M.Ichikawa, Y.Nakamura, A.A. Shklyaev
  • Journal Title: Materials Research Society Symposium Proceedings 1145
  • Peer Reviewed
• [Journal Article] Photoluminescence from Si-capped GeSn nanodots on Si substrates formed using an ultrathin SiO_2 film technique (2009)
  • Author(s): Y.Nakamura, N.Fujinoki, M.Ichikawa
  • Journal Title: Journal of Applied Physics 106
  • Peer Reviewed
• [Journal Article] Scanning tunneling microscope-cathodoluminescence measurement of the GaAs/AlGaAs heterostructure (2009)
  • Author(s): K.Watanabe, Y.Nakamura, M.Ichikawa, S.Kuboya, R.Katayama, K.Onabe
  • Journal Title: Jouranal of Vacuum Science & Technology B27 Pages: 1874-1880
  • Peer Reviewed
• [Journal Article] Formation and optical properties of GaSb quantum dots epitaxially grown on Si substrates using an ultrathin SiO2 film technique (2009)
  • Author(s): Y. Nakamura, T. Sugimoto and M. Ichikawa
  • Journal Title: Journal of Appiled Physics 105
  • Peer Reviewed
• [Journal Article] Defect-related light emission in the 1.4-1.7μm range from Si layers at room temperature (2009)
  • Author(s): A. A. Shklyaev, Y. Nakamura, F. N. Dultsev and M. Ichikawa
  • Journal Title: Journal of Applied Physics 105
  • Peer Reviewed
• [Journal Article] Characterization of semiconductor nanostructures formed by using ultrathin Si oxide technology (2008)
  • Author(s): M.Ichikawa, S.Uchida, A.A.Shklyaev, Y.Nakamura, S.-P.Cho, N.Tanaka
  • Journal Title: Applied Surface Science 255巻 Pages: 669-671
  • Peer Reviewed
• [Journal Article] Local optical characterization related to Si cluster concentration in GaAs using scanning tunneling microscope cathodoluminescence spectroscopy (2008)
  • Author(s): 渡邉亮子, 中村芳明, 市川昌和
  • Journal Title: Japanese Journal of Applied Physics 47巻 Pages: 6109-6113
  • Peer Reviewed
• [Journal Article] Spatial resolution of imaging contaminations on the GaAs surface by scanning tunneling microscope cathodoluminescence spectroscopy (2008)
  • Author(s): 渡邉亮子, 中村芳明, 市川昌和
  • Journal Title: Applied Surface Science 254巻 Pages: 7737-7741
  • Peer Reviewed
• [Journal Article] Sperical aberration corrected STEM studies of Ge nanodots grown on Si(001) surface with an ultrathin SiO_2 coverage (2008)
  • Author(s): N.Tanaka, S.-P.Cho, A.A.Shklyaev, J.Yamasaki, E.Okunishi, M.Ichikawa
  • Journal Title: Applied Surface Science 254巻 Pages: 7569-7527
  • Peer Reviewed
• [Journal Article] Self-assembled epitaxial growth of high density β-FeSi_2 nanodots on Si(001) and their spatially resolved optical absorption properties (2008)
  • Author(s): Y.Nakamura,, S.Amari, N.Naruse, Y.Mera, K.Maeda, M.Ichikawa
  • Journal Title: Crystal Growth & Design 8巻 Pages: 3019-3023
  • Peer Reviewed
• [Journal Article] Self-assembled epitaxial growth of high densityβ-FeSi2 nanodots on Si(001) and their spatially resolved optical absorption properties (2008)
  • Author(s): Y. Nakamura, S. Amari, N. Naruse, Y. Mera, K. Maeda and M. Ichikawa
  • Journal Title: Crystal Growth & Design 8 Pages: 3019-3023
  • Peer Reviewed
• [Journal Article] Sperical aberration corrected STEM studies of Ge nanodots grown on Si(001) surface with an ultrathin SiO2 coverage (2008)
  • Author(s): N. Tanaka, S.-P. Cho, A. A. Shklyaev, J. Yamasaki, E. Okunishi and M. Ichikawa
  • Journal Title: Applied Surface Science 254 Pages: 7569-7527
  • Peer Reviewed
• [Journal Article] Spatial resolution of imaging contaminations on the GaAs surface by scanning tunneling microscope cathodoluminescence spectroscopy (2008)
  • Author(s): K.Watanabe, Y.Nakamura and M.Ichikawa
  • Journal Title: Applied Surface Science 254 Pages: 7737-7741
  • Peer Reviewed
• [Journal Article] Local optical characterization related to Si cluster concentration in GaAs using scanning tunneling microscope cathodoluminescence spectroscopy (2008)
  • Author(s): K. Watanabe, Y.Nakamura and M. Ichikawa
  • Journal Title: Japanese Journal of Apphed Physics 47 Pages: 6109-6113
  • Peer Reviewed
• [Journal Article] Characterization of semiconductor nanostructures formed by using ultrathin Sioxide technology (2008)
  • Author(s): M. Ichikawa, S. Uchida, A. A. Shklyaev, Y. Nakamura, S. -P. Cho and N. Tanaka
  • Journal Title: Apphed Surface Science 255 Pages: 669-671
  • Peer Reviewed
• [Presentation] Development of Novel System Combining STM-cathodoluminescence and STM-electroluminescence Nanospectroscopies (2010)
  • Author(s): K.Watanabe, Y.Nakamura, S.Kuboya, R.Katayama, K.Onabe, M.Ichikawa
  • Organizer: 18th International Colloquium on Scanning Probe Microscopy
  • Place of Presentation: 伊豆熱川、静岡
  • Year and Date: 2010-12-09
• [Presentation] Development of Novel System Combining STM-cathodoluminescence and STM-electroluminescence Nanospectroscopies (2010)
  • Author(s): K.Watanabe, Y.Nakamura, S.Kuboya, R.Katayama, K.Onabe, M.Ichikawa
  • Organizer: 18^<th> International Colloquium on Scanning Probe Microscopy
  • Place of Presentation: 伊豆熱川、静岡
  • Year and Date: 2010-12-09
• [Presentation] Optical properties of GaSb thin films on Si substrates grown by nano-channel epitaxy (2010)
  • Author(s): M.Ichikawa, T.Miwa, A.Murayama, Y.Nakamura
  • Organizer: 2010 Materials Research Society Fall Meeting
  • Place of Presentation: Boston, USA
  • Year and Date: 2010-11-30
• [Presentation] Optical properties of GaSb thin films on Si substrates grown by nano-channel epitaxy (2010)
  • Author(s): M.Ichikawa, T.Miwa, A.Murayama, Y.Nakamura
  • Organizer: 2010 Materials Research Society Fall Meeting
  • Place of Presentation: Boston, USA.
  • Year and Date: 2010-11-30
• [Presentation] STMカソードルミネッセンス分光法に適した導電性光プローブの開発 (2010)
  • Author(s): 渡辺健太郎、中村芳明、市川昌和
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学、長崎市
  • Year and Date: 2010-09-16
• [Presentation] 金属ナノ構造中の局在表面プラズモンに関する量子論II (2010)
  • Author(s): 市川昌和
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学、長崎市
  • Year and Date: 2010-09-16
• [Presentation] ナノチャネルヘテロエピタキシーによるSi基板上への薄膜成長 (2010)
  • Author(s): 市川昌和、三羽貴文、村山昭之、中村芳明
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学、長崎市
  • Year and Date: 2010-09-16
• [Presentation] 金属ナノ構造中の表面プラズモンに関する量子論 (2010)
  • Author(s): 市川昌和
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 平塚市、東海大学
  • Year and Date: 2010-03-18
• [Presentation] ブロックコポリマーPEOm-b-PMA(AZ)nを用いたSi(001)極薄酸化膜上のGe量子ドットの周期配列構造の結晶性および発光特性の評価 (2010)
  • Author(s): 村山昭之、中村芳明、渡辺亮子、彌田智一、市川昌和
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 平塚市、東海大学
  • Year and Date: 2010-03-18
• [Presentation] 極薄Si酸化膜を形成したSi基板上へのエピタキシャルGaSb薄膜の形成過程と発光特性 (2010)
  • Author(s): 三羽貴文、中村芳明、市川昌和
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 平塚市、東海大学
  • Year and Date: 2010-03-18
• [Presentation] 極薄Si酸化膜を形成したSi基板上へのエピタキシャルGaSb薄膜の形成過程と発光特性 (2010)
  • Author(s): 三羽貴文、中村芳明、市川昌和
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学
  • Year and Date: 2010-03-18
• [Presentation] ブロックコポリマーPEOm-b-PMA(AZ)nを用いたSi(001)極薄酸化膜上のGe量子ドットの周期配列構造の結晶性および発光特性の評価 (2010)
  • Author(s): 村山昭之、中村芳明、渡辺亮子、彌田智一、市川昌和
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学
  • Year and Date: 2010-03-18
• [Presentation] 金属ナノ構造中の表面プラズモンに関する量子論 (2010)
  • Author(s): 市川昌和
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学
  • Year and Date: 2010-03-18
• [Presentation] GaAs/AlGaAsダブルヘテロpin-構造のSTM-EL分光評価 (2010)
  • Author(s): 渡辺健太郎、中村芳明、窪谷茂幸、片山竜二、尾鍋研太郎、市川昌和
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 平塚市、東海大学
  • Year and Date: 2010-03-17
• [Presentation] GaAs/AlGaAsダブルヘテロpin-構造のSTM-EL分光評価 (2010)
  • Author(s): 渡辺健太郎、中村芳明、窪谷茂幸、片山竜二、尾鍋研太郎、市川昌和
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学
  • Year and Date: 2010-03-17
• [Presentation] Intense light emission from ultrahigh density GeSn nanodots embedded in Si films (2009)
  • Author(s): M.Ichikawa, Y.Nakamura, N.Fujinoki
  • Organizer: 10th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
  • Place of Presentation: Granada, Spain
  • Year and Date: 2009-09-23
• [Presentation] 極薄Si酸化膜を形成したSi基板上のエピタキシャルGaSb薄膜の発光特性 (2009)
  • Author(s): 三羽貴文、中村芳明、市川昌和
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山市、富山大学
  • Year and Date: 2009-09-09
• [Presentation] 極薄Si酸化膜を形成したSi基板上のエピタキシャルGaSb薄膜の発光特性 (2009)
  • Author(s): 三羽貴文、中村芳明、市川昌和
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学
  • Year and Date: 2009-09-09
• [Presentation] Si(111)基板上のエピタキシャルFe_3Siナノドット磁気特性の構造依存性 (2009)
  • Author(s): 甘利彰悟、中村芳明、市川昌和
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: つくば市、筑波大学
  • Year and Date: 2009-04-01
• [Presentation] ブロックコポリマーPEOm-b-PMA(AZ9)nを用いたSi(001)極薄酸化膜上のGe量子ドットの周期配列制御 (2009)
  • Author(s): 村山昭之、中村芳明、渡辺亮子、彌田智一、市川昌和
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: つくば市、筑波大学
  • Year and Date: 2009-04-01
• [Presentation] Si/GeSnドット/Si構造における1.5μm帯発光効率へのアニール効果 (2009)
  • Author(s): 藤ノ木紀仁、中村芳明、市川昌和
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: つくば市、筑波大学
  • Year and Date: 2009-04-01
• [Presentation] 極薄Si酸化膜を用いたエピタキシャルGaSb薄膜のSi基板上の成長と発光特性 (2009)
  • Author(s): 三羽貴文、金井龍一、杉本智洋、中村芳明、市川昌和
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: つくば市、筑波大学
  • Year and Date: 2009-04-01
• [Presentation] 極薄Si酸化膜を用いたエピタキシャルGaSb薄膜のSi基板上の成長と発光特性 (2009)
  • Author(s): 三羽貴文、金井龍一、杉本智洋、中村芳明、市川昌和
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-04-01
• [Presentation] Si/GeSnドット/Si構造における1.5μm帯発光効率へのアニール効果 (2009)
  • Author(s): 藤ノ木紀仁、中村芳明、市川昌和
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-04-01
• [Presentation] ブロックコポリマーPEOm-b-PMA(AZ9)nを用いたSi(001)極薄酸化膜上のGe量子ドットの周期配列制御 (2009)
  • Author(s): 村山昭之、中村芳明、渡辺亮子、彌田智一、市川昌和
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-04-01
• [Presentation] Si(111)基板上のエピタキシャルFe_3Siナノドット磁気特性の構造依存性 (2009)
  • Author(s): 甘利彰悟, 中村芳明, 市川昌和
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-04-01
• [Presentation] STM-CL分光法の空間分解能決定要因の研究 (2009)
  • Author(s): 渡辺健太郎、中村芳明、窪谷茂幸、片山竜二、尾鍋研太郎、市川昌和
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: つくば市、筑波大学
  • Year and Date: 2009-03-30
• [Presentation] STM-CL分光法の空間分解能決定要因の研究 (2009)
  • Author(s): 渡辺健太郎、中村芳明、窪谷茂幸、片山竜二、尾鍋研太郎、市川昌和
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-03-30
• [Presentation] Opto-electronic properties of Ge and Si related nanostructures on ultrathin Si oxide covered Si surfaces (2008)
  • Author(s): 市川昌和
  • Organizer: 2008 MRS Fall Meeting
  • Place of Presentation: Boston, USA
  • Year and Date: 2008-12-02
• [Presentation] Opto-electronic properties of Ge and Si related nanostructures on ultrathin Si oxidecovered Si surfaces (2008)
  • Author(s): Masakazu Ichikawa
  • Organizer: 2008MRS Fall Meeting
  • Place of Presentation: Boston USA
  • Year and Date: 2008-12-02
• [Presentation] Growth and characterization of nanostructures on ultrathin SiO_2 covered Si surfaces (2008)
  • Author(s): 市川昌和
  • Organizer: VIth Stranski-Kaischew Surface Science Workshop
  • Place of Presentation: Sunny Beach, Bulgaria
  • Year and Date: 2008-09-22
• [Presentation] Growth and characterization of nanostructures on ultrathin SiO2 covered Si surfaces (2008)
  • Author(s): Masakazu Ichikawa
  • Organizer: Vlth Stranski-Kaischew Surface Science Workshop
  • Place of Presentation: Sunny Beach, Bulgaria
  • Year and Date: 2008-09-22
• [Presentation] Si基板上β-FeSi_2, Fe_3Siナノドットの自己形成とその光学及び磁気特性 (2008)
  • Author(s): 中村芳明、市川昌和
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県、中部大学
  • Year and Date: 2008-09-04
• [Presentation] Si(111)基板上への超高密度エピタキシャルFe_3Siナノドットの形成とその磁気特性 (2008)
  • Author(s): 甘利彰悟、福田憲二郎、中村芳明、市川昌和
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県、中部大学
  • Year and Date: 2008-09-04
• [Presentation] Si(111)基板上への超高密度エピタキシャルFe3Siナノドットの形成とその磁気特性 (2008)
  • Author(s): 甘利彰悟、福田憲二郎、中村芳明、市川昌和
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県、中部大学
  • Year and Date: 2008-09-04
• [Presentation] Si基板上β-FeSi2,Fe3Siナノドットの自己形成とその光学及び磁気特性 (2008)
  • Author(s): 中村芳明、市川昌和
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県、中部大学
  • Year and Date: 2008-09-04
• [Presentation] 1.5μm帯高発光効率を有するSi/GeSnドット/Si構造の作製 (2008)
  • Author(s): 藤ノ木紀仁、中村芳明、市川昌和
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県、中部大学
  • Year and Date: 2008-09-03
• [Presentation] 極薄SiO_2/Si基板上に形成したエピタキシャルGaSb量子ドットの発光特性評価 (2008)
  • Author(s): 中村芳明、杉本智洋、市川昌和
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県、中部大学
  • Year and Date: 2008-09-03
• [Presentation] 極薄Sio2/Si基板上に形成したエピタキシャルGaSb量子ドットの発光特性評価 (2008)
  • Author(s): 中村芳明、杉本智洋、市川昌和
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県、中部大学
  • Year and Date: 2008-09-03
• [Book] Formation and Opto-Electronic Properties of Nanostructures on Ultrathin SiO_2 Covered Si Surfaces, Nanophenomena at Surfaces : Fundamentals of Exotic Condensed Matter Properties (2011)
  • Author(s): Masakazu Ichikawa
  • Publisher: Springer(印刷中 出版確定)
• [Book] Formation and opto-electronic properties of nanostructures on ultrathin SiO_2 covered Si surfaces, Nanophenomena at surfaces : Fundamentals of exotic condensed matter properties (2011)
  • Author(s): M.Ichikawa
  • Publisher: Springer-Verlag Berlin Heidelberg
• [Remarks] ホームページ等
  • URL: http://aph.t.u-tokyo.ac.jp/~ichikawa/
• [Remarks]
  • URL: http://aph.t.u-tokvo.acjp/ichikawa/