Development and Application of a thin film growth method called nano-channel hetero-epitaxy
| Project/Area Number |
20360015
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | The University of Tokyo |
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Principal Investigator |
ICHIKAWA Masakazu The University of Tokyo, 大学院・新領域創成科学研究科, 特任教授 (20343147)
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| Co-Investigator(Kenkyū-buntansha) |
NAKAMURA Yoshiaki 大阪大学, 大学院・基礎工学研究科, 准教授 (60345105)
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥18,720,000 (Direct Cost: ¥14,400,000、Indirect Cost: ¥4,320,000)
Fiscal Year 2010: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2009: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2008: ¥10,790,000 (Direct Cost: ¥8,300,000、Indirect Cost: ¥2,490,000)
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| Keywords | ナノ材料 / 薄膜 / 量子ドット / シリコン / 半導体物性 / 表面・界面物性 / 光物性 / 化合物半導体 / ゲルマニウム |
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| Research Abstract |
In order to integrate Si optical devices with Si electrical devices, we have developed a hetero-epitaxial growth method called nano-channel hetero-epitaxy in which ultrahigh density nanodots formed on ultrathin SiO2-covered Si substrates are used as seed crystals to grow hetero-thin films with good crystalline qualities on Si substrates. We have grown Ge, GeSn, GaSb and AlGaSb films with good crystalline qualities on Si substrates and investigated their crystalline and light-emitting properties.
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Report
(4 results)
Research Products
(77 results)
