| Project/Area Number |
20360016
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | The University of Tokyo |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
TADA Tomofumi 東京大学, 大学院・工学系研究科, 特任准教授 (40376512)
戸塚 英臣 日本大学, 理工学部, 助手 (10339260)
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| Co-Investigator(Renkei-kenkyūsha) |
TOTSUKA Hideomi 日本大学, 理工学部, 助手 (10339260)
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥11,440,000 (Direct Cost: ¥8,800,000、Indirect Cost: ¥2,640,000)
Fiscal Year 2010: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2009: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2008: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
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| Keywords | 走査プローブ顕微鏡 / 電気特性計算 / ナノスケール電気伝導 / ナノ構造 / 薄膜・表面界面物性 / 走査トンネル分光 / 局所トンネル障壁高さ / ケルビン力顕微鏡 / 多探針電気特性計測 / キャパシタンス |
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| Research Abstract |
We have developed and improved methods and computational codes for theoretical analyses on nanoscale local electric property measurements using scanning probe microscopes. Using the codes, we have achieved, for example, clarification of relation between local tunneling barrier height measurements and band bending induces by a voltage applied to probe, clarification of origins of the oscillation with the gate voltage and appearance of negative values in four-probe resistance measurements, and derivation of formula to determine voltages in the voltage probes that satisfy the zero-current condition in the four-probe resistance measurements
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