Real-Time Scanning Tunneling Microscopy of Nano-Scale Surface Modification by Dopant Ion Irradiation
| Project/Area Number |
20360023
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Thin film/Surface and interfacial physical properties
|
|---|
| Research Institution | Waseda University |
|---|
Principal Investigator |
OHDOMARI Iwao Waseda University, 理工学術院, 名誉教授 (30063720)
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
TANII Takashi 早稲田大学, 理工学術院, 准教授 (20339708)
WATANABE Takanobu 早稲田大学, 理工学術院, 准教授 (00367153)
|
|---|
| Project Period (FY) |
2008 – 2010
|
| Project Status |
Completed (Fiscal Year 2010)
|
| Budget Amount *help |
¥18,070,000 (Direct Cost: ¥13,900,000、Indirect Cost: ¥4,170,000)
Fiscal Year 2010: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2009: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2008: ¥8,970,000 (Direct Cost: ¥6,900,000、Indirect Cost: ¥2,070,000)
|
|---|
| Keywords | ナノ構造物性 / ナノ表面・界面 / ナノ構造作製 / ナノ計測 / ナノ物性制御 |
|---|
| Research Abstract |
A scanning tunneling microscope system has been developed to observe in real-time the surface modification induced by ion irradiation for the purpose of understanding atomistic behaviors of implanted dopant atoms in nano-scale semiconductor devices. We have succeeded in imaging the formation and annihilation processes of ion-induced structures on thermally treated and passivated silicon surfaces. Basic studies have also been performed experimentally and by using computer simulations on electronic conduction mechanisms in future nano-scale three-dimensional devices.
|
Report
(4 results)
Research Products
(106 results)
