Real-Time Scanning Tunneling Microscopy of Nano-Scale Surface Modification by Dopant Ion Irradiation

• Project/Area Number: 20360023
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Waseda University
• Principal Investigator: OHDOMARI Iwao Waseda University, 理工学術院, 名誉教授 (30063720)
• Co-Investigator(Renkei-kenkyūsha): TANII Takashi 早稲田大学, 理工学術院, 准教授 (20339708) ; WATANABE Takanobu 早稲田大学, 理工学術院, 准教授 (00367153)
• Project Period (FY): 2008 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥18,070,000 (Direct Cost: ¥13,900,000、Indirect Cost: ¥4,170,000); Fiscal Year 2010: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000); Fiscal Year 2009: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000); Fiscal Year 2008: ¥8,970,000 (Direct Cost: ¥6,900,000、Indirect Cost: ¥2,070,000)
• Keywords: ナノ構造物性 / ナノ表面・界面 / ナノ構造作製 / ナノ計測 / ナノ物性制御

Research Abstract

A scanning tunneling microscope system has been developed to observe in real-time the surface modification induced by ion irradiation for the purpose of understanding atomistic behaviors of implanted dopant atoms in nano-scale semiconductor devices. We have succeeded in imaging the formation and annihilation processes of ion-induced structures on thermally treated and passivated silicon surfaces. Basic studies have also been performed experimentally and by using computer simulations on electronic conduction mechanisms in future nano-scale three-dimensional devices.

Research Products

• [Journal Article] Molecular Dynamics Simulation on Longitudinal Optical Phonon Mode Decay and Heat Transport in a Silicon Nano-Structure Covered with Oxide Films (2011)
  • Author(s): T.Zushi, Y.Kamakura, K.Taniguchi,I.Ohdomari, T.Watanabe
  • Journal Title: Jpn.J.Appl.Phys. Vol.50
  • NAID: 210000069796
  • Peer Reviewed
• [Journal Article] Molecular Dynamics Simulation on Longitudinal Optical Phonon Mode Decay and Heat Transport in a Silicon Nano-Structure Covered with Oxide Films (2011)
  • Author(s): T.Zushi, Y.Kamakura, K.Taniguchi, I.Ohdomari, T.Watanabe
  • Journal Title: Jpn.J.Appl.Phys. Volume: 50
  • NAID: 210000069796
  • Peer Reviewed
• [Journal Article] Real-Time Scanning Tunneling Microscopy Observation of Si(111) Surface Modified by Au^+ Ion Irradiation" (2010)
  • Author(s): T.Kamioka, K.Sato, Y.Kazama, I.Ohdomari, T. Watanabe
  • Journal Title: Jpn.J.Appl.Phys. Vol.49
  • NAID: 40016941282
  • Peer Reviewed
• [Journal Article] Simulation of the Heat Transport in a Silicon Nano-structure Covered with Oxide Films (2010)
  • Author(s): T.Zushi, T.Watanabe, I.Ohdomari, K.Taniguchi
  • Journal Title: Jpn.J.Appl.Phys. (in press)
  • Peer Reviewed
• [Journal Article] Real-Time Scanning Tunneling Microscopy Observation of Si(111)Surface Modified by Au+ Ion Irradiation (2010)
  • Author(s): T.Kamioka, K.Sato, Y.Kazama, I.Ohdomari, T.Watanabe
  • Journal Title: Jpn.J.Appl.Phys. Vol.49, No.1
  • NAID: 40016941282
  • Peer Reviewed
• [Journal Article] Demonstration of transconductance enhancement on (110) and (100) strained-nanowire FETs (2009)
  • Author(s): A.Seike, H.Takai, I.Tsuchida, I.Ohdomari, T. Watanabe
  • Journal Title: Proc.ECS Transactions Vol.25 Pages: 427-430
• [Journal Article] Electron-phonon scattering effect on strained Si nanowire FETs at low temperature (2009)
  • Author(s): I.Tsuchida, A.Seike, H.Takai, I.Ohdomari, T.Watanabe
  • Journal Title: Proc.ECS Transactions Vol.25 Pages: 439-443
  • Peer Reviewed
• [Journal Article] Performance Enhancement of Semiconductor Devices by Control of Discrete Dopant Distribution (2009)
  • Author(s): M.Hori, T.Shinada, K.Taira, T.Tanii, T.Endo, I.Ohdomari
  • Journal Title: Nanotechnology Vol.20
  • Peer Reviewed
• [Journal Article] Impact of adequate selection of channel direction on(001)and(110)wafer orientation for strained nanowire transistors (2009)
  • Author(s): A.Seike, H.Takai, I.Tsuchida, I.Ohdomari, T.Watanabe
  • Journal Title: Proc.of Int.Conf.on SSDM Pages: 1112-1113
  • Peer Reviewed
• [Journal Article] Experimental investigation of electron-phonon scattering effect in strained Sinanowire FETs at low temperature (2009)
  • Author(s): I.Tsuchida, A.Seike, H.Takai, I.Ohdomari, T.Watanabe
  • Journal Title: Proc.of Int.Conf.on SSDM Pages: 723-724
  • Peer Reviewed
• [Journal Article] Demonstration of transconductance enhancement on(110)and(100)strained-nanowire FETs (2009)
  • Author(s): A.Seike, H.Takai, I.Tsuchida, I.Ohdomari, T.Watanabe
  • Journal Title: Proc.ECS Transactions Vol.25, issue 6 Pages: 427-430
  • Peer Reviewed
• [Journal Article] Electron-phonon scattering effect on strained Si nanowire FETs at low temperature (2009)
  • Author(s): I.Tsuchida, A.Seike, H.Takai, I.Ohdomari, T.Watanabe
  • Journal Title: Proc.ECS Transactions Vol.25, issue 6 Pages: 439-443
  • Peer Reviewed
• [Journal Article] Performance Enhancement of Semiconductor Devices by Control of Discrete Dopant Distribution (2009)
  • Author(s): M.Hori, T.Shinada, K.Taira, T.Tanii, T.Endo, I.Ohdomari
  • Journal Title: Nanotechnology 20 Pages: 365-205
  • Peer Reviewed
• [Journal Article] Development of an ion beam alignment system for real-time scanning tunneling microscope observation of dopant-ion irradiation (2008)
  • Author(s): T.Kamioka, K.Sato, Y.Kazama, T.Watanabe, I.Ohdomari
  • Journal Title: Rev.Sci.Instrum. Vol.79
  • Peer Reviewed
• [Journal Article] A molecular simulation study of an organosilane self-assembled monolayer/Si0_2 substrate interface (2008)
  • Author(s): H. Yamamoto, T. Watanabe, I. Ohdomari
  • Journal Title: J. Chem. Phys. 128 Pages: 164710-164710
  • Peer Reviewed
• [Journal Article] A reliable method for the counting and control of single ions for sing le-dopant controlled devices (2008)
  • Author(s): T. Shinada, K. Kurosawa, H. Nakayama, I. Ohdomari
  • Journal Title: Nanotechnology 19 Pages: 345202-345202
  • Peer Reviewed
• [Journal Article] Development of an ion beam alignment system for real-time scanning tunneling microscope observation of dopant-ion irradiation (2008)
  • Author(s): T. Kamioka, K. Sato, Y. Kazam a, T. Watanabe, I. Ohdomari
  • Journal Title: Rev. Sci. Instrum. 79 Pages: 73707-73707
  • Peer Reviewed
• [Journal Article] Real-Time Imaging of Single-Molecule Fluorescence with a Zero-Mode Waveguide for the Analysis of Protein-Protein Interaction (2008)
  • Author(s): T. Miyake, T. Tanii, H. Sonobe, R. Akahori, I. Ohdomari
  • Journal Title: Anal. Chem. 80 Pages: 6018-6022
  • Peer Reviewed
• [Journal Article] Effect of the C-Terminal Truncation on the functional Cycle of Chaper onin GroEL : Implication that the C-Terminal Region Faciliates the Tra nsaction from the Folding-Arrested to the Folding-Competent State (2008)
  • Author(s): M. Suzuki, T. Ueno, R. Iizuka, T. Miura, T. Zako, I. . Ohdomari
  • Journal Title: The Journal of Biological Chemistry 283 Pages: 23931-23939
  • Peer Reviewed
• [Journal Article] Potential energy landscape of an interstitial O2 molecule in a SiO2 film near the SiO2/Si(001) interface (2008)
  • Author(s): H. Ohta, T. Watanabe, I. Ohdomari
  • Journal Title: Phys. Rev. B 78 Pages: 155326-155326
  • Peer Reviewed
• [Journal Article] In-plane X-ray Diffraction Profiles from Organosilane Monolayer/SiO_2 Models (2008)
  • Author(s): H. Yamamoto, T. Watanabe, I. Ohdomari
  • Journal Title: Appl. Phys. Express 1 Pages: 105002-105002
  • NAID: 10025082902
  • Peer Reviewed
• [Journal Article] Transconductance enhancement of Si nanowire transistors by oxide-indu ced strain (2008)
  • Author(s): A. Seike, T. Tange, I. Sano, Y. Sugiura, I. Ohdomari
  • Journal Title: IEEE International Conference on Integrated Circuit Design and Technology and Tutorial 1 Pages: 207-210
  • Peer Reviewed
• [Journal Article] Transconductance Enhancement by Utilizing Patten Dependent Oxidation in Silicon Nanowire Field-Effect Transistors (2008)
  • Author(s): A. Seike, T. Tange, I. Sano, Y. Sugiura, I. Ohdomari
  • Journal Title: ECS Transactions-Phoenix 13 Pages: 351-358
  • Peer Reviewed
• [Presentation] Si系トンネルFETのシミュレーション (2010)
  • Author(s): 渡邉孝信
  • Organizer: 電気学会シリコンナノデバイス集積化技術調査専門委員会急峻サブスレショルドデバイスの現状と将来展望
  • Place of Presentation: Tokyo, Japan(招待講演)
  • Year and Date: 2010-11-26
• [Presentation] Misfit Stress Relaxation Mechanism in GeO2/Ge Systems : A Classical Molecular Simulation Study (2010)
  • Author(s): T.Watanabe, T.Onda, I.Ohdomari
  • Organizer: ECS meeting
  • Place of Presentation: Las Vegas, U.S.A.
  • Year and Date: 2010-10-14
• [Presentation] GeO2/Ge界面のストレス緩和の起源 (2010)
  • Author(s): 恩田知弥, 山本英明, 渡邉孝信
  • Organizer: 春季第58回応用物理学関連連合講演会
  • Place of Presentation: 東海大学, 平塚市
  • Year and Date: 2010-03-18
• [Presentation] 極微細MOSFETにおける発熱過程の過渡解析シミュレーション (2010)
  • Author(s): 図師知文, 鎌倉良成, 渡邉孝信, 森伸也, 谷口研二
  • Organizer: 春季第58回応用物理学関連連合講演会
  • Place of Presentation: 東海大学, 平塚市
  • Year and Date: 2010-03-18
• [Presentation] Si系トンネルFETのシミュレーション" (2010)
  • Author(s): 渡邉孝信
  • Organizer: 電気学会シリコンナノデバイス集積化技術調査専門委員会「急峻サブスレショルドデバイスの現状と将来展望
  • Place of Presentation: 東京、日本(招待講演)
• [Presentation] 水素終端Si(001)-2×1表面へのイオン照射過程のその場STM観察 (2010)
  • Author(s): 礒野文哉,神岡武文,吉田尚弘,大泊巌,渡邉孝信
  • Organizer: 秋季第71回応用物理学会学術講演会
  • Place of Presentation: 長崎、日本
• [Presentation] Molecular Dynamics Simulation of Lo Phonon Mode Decay in Si Nano-Structures Covered with Oxide Films (2010)
  • Author(s): T.Zushi, I.Ohdomari, T.Watanabe, Y.Kamakura, K.Taniguchi
  • Organizer: The International Conference on Simulation of Se miconductor Processes and Devices (SISPAD)
  • Place of Presentation: Bologna Italy
• [Presentation] Molecular Dynamics Simulation on Phonon Dynamics and Heat Transport in Nanoscale Silicon (2010)
  • Author(s): T.Watanabe, T.Zushi, Y.Kamakura, K.Taniguchi, I.Ohdomari
  • Organizer: International Symposium on Technology Evolution for Silicon Nano-Electronics
  • Place of Presentation: Tokyo, Japan
• [Presentation] ドーパントイオン照射による水素終端Si表面ナノ改質素過程のリアルタイムSTM観察 (2010)
  • Author(s): 神岡武文, 吉田尚弘, 礒野文哉, 大泊巌, 渡邉孝信
  • Organizer: 早稲田大学ナノテクノロジーフォーラムジョイントフェア2010グリーンテクノロジーへの提案
  • Place of Presentation: Tokyo, Japan
• [Presentation] Siナノ構造中のLOフォノン緩和に関する分子動力学シミュレーション (2010)
  • Author(s): 図師知文, 鎌倉良成, 谷口研二, 大泊巌, 渡邉孝信
  • Organizer: 秋季第71回応用物理学会学術講演会
  • Place of Presentation: Nagasaki, Japan
• [Presentation] ショットキーバリアトランジスタのサブスレッショルドスイング評価 (2010)
  • Author(s): 高井一, 川村祐士, 鹿浜康寛, 渡邉孝信
  • Organizer: 秋季第71回応用物理学会学術講演会
  • Place of Presentation: Nagasaki, Japan
• [Presentation] TCADシミュレーションによるSi系トンネルFETの比較検討 (2010)
  • Author(s): 高井一, 川村祐士, 鹿浜康寛, 渡邉孝信
  • Organizer: 第16回ゲートスタック研究会
  • Place of Presentation: Tokyo, Japan
• [Presentation] 水素終端Si(001)-2X1表面へのイオン照射過程のその場STM観察 (2010)
  • Author(s): 礒野文哉, 神岡武文, 吉田尚弘, 大泊巌, 渡邉孝信
  • Organizer: 秋季第71回応用物理学会学術講演会
  • Place of Presentation: Nagasaki, Japan
• [Presentation] 分子動力学法によるGeO2/Ge界面構造の基板面方位依存性に関する調査 (2010)
  • Author(s): 恩田知弥, 山本英明, 渡邉孝信
  • Organizer: ゲートスタック研究会(第15回)-材料・プロセス・評価の物理-
  • Place of Presentation: 東レ総合研修センター, 三島市
• [Presentation] 歪SiナノワイヤFETにおけるチャネル方向とウエハ面方位が相互コンダクタンスに与える影響評価 (2010)
  • Author(s): 高井一, 清家綾, 土田育新, 増田純一, 大泊巌, 渡邉孝信
  • Organizer: ゲートスタック研究会(第15回)-材料・プロセス・評価の物理-
  • Place of Presentation: 東レ総合研修センター, 三島市
• [Presentation] Deal-Grove モデルに代わるシリコン熱酸化速度理論 (2009)
  • Author(s): 渡邉孝信
  • Organizer: 第29回表面科学学術講演会
  • Place of Presentation: タワーホール船堀, 東京
  • Year and Date: 2009-10-28
• [Presentation] 歪SiナノワイヤFETにおける相互コンダクタンスのドレイン電圧依存性 (2009)
  • Author(s): 高井一, 清家綾, 土田育新, 増田純一, 大泊巌, 渡邉孝信
  • Organizer: 秋季第70回応用物理学会学術講演会
  • Place of Presentation: 富由大学, 富山市
  • Year and Date: 2009-09-11
• [Presentation] GeO2/Ge(001)、GeO2/Ge(110)、GeO2/Ge(111)構造のモデリング (2009)
  • Author(s): 恩田知弥, 山本英明, 大泊巌, 渡邉孝信
  • Organizer: 秋季第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学, 富山市
  • Year and Date: 2009-09-11
• [Presentation] イオン照射誘起欠陥の出現位置のメモリー効果 (2009)
  • Author(s): 神岡武文, 風間裕, 吉田尚弘, 大泊巌, 渡邉孝信
  • Organizer: 秋季第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学, 富山市
  • Year and Date: 2009-09-10
• [Presentation] シングルイオン注入法の基板バイアス印加による単一性改善に関する研究 (2009)
  • Author(s): 堀匡寛, 品田賢宏, 平圭吾, 遠藤哲郎, 谷井孝至, 大泊巌
  • Organizer: 秋季第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学, 富山市
  • Year and Date: 2009-09-10
• [Presentation] ナノスケールデバイスの熱問題:極微細MOSFETにおける発熱の微視的過程と電気伝導への影響 (2009)
  • Author(s): 鎌倉良成, 図師知文, 渡邉孝信, 森伸也, 谷口研二
  • Organizer: 秋季第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学, 富山市
  • Year and Date: 2009-09-08
• [Presentation] 集束Auイオンビームによる細胞機能修飾 (2009)
  • Author(s): 品田賢宏, 秋本崇之, 朱延偉, 堀匡寛, 平圭吾, 大泊巌
  • Organizer: 秋季第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学, 富山市
  • Year and Date: 2009-09-08
• [Presentation] 分子動力学法によるシリコンナノ構造中の熱輸送シミュレーション (2009)
  • Author(s): 図師知文, 鎌倉良成, 谷口研二, 大泊巌, 渡邉孝信
  • Organizer: 秋季第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学, 富山市
  • Year and Date: 2009-09-08
• [Presentation] 離散的ドーパント位置のデバイス特性に及ぼす影響調査 (2009)
  • Author(s): 平圭吾, 品田賢宏, 堀匡寛, 谷井孝至, 遠藤哲郎, 大泊巌
  • Organizer: 秋季第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学, 富山市
  • Year and Date: 2009-09-08
• [Presentation] Atomistic Picture of Silicon Oxidation Process ; Beyond the Deal-Grove Model(Invited talk) (2009)
  • Author(s): 渡邉孝信
  • Organizer: International Conference on Computational & Experimental Engineering and Sciences(ICCES'09)
  • Place of Presentation: Phuket, Thailand
  • Year and Date: 2009-04-10
• [Presentation] Real-time scanning tunneling microscope observation of implanted gold atoms on silicon surface (2009)
  • Author(s): T.Kamioka, Y.Kazama, T.Yoshida, I.Ohdomari, T.Watanabe
  • Organizer: 10th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-10)
  • Place of Presentation: Granada, Spain.
• [Presentation] Real-time scanning tunneling microscope observation of implanted gold atoms on silicon surface (2009)
  • Author(s): 神岡武文, 風間裕, 吉田尚弘, 大泊巌, 渡邉孝信
  • Organizer: 10th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures(ACSIN-10)
  • Place of Presentation: Granada, Spain
• [Presentation] Demonstration of transconductance enhancement on(110)and(100)strained-nanowire FETs (2009)
  • Author(s): 清家綾, 高井一, 土田育新, 大泊巌, 渡邉孝信
  • Organizer: ECS
  • Place of Presentation: Vienna, Austria
• [Presentation] Electron-phonon scattering effect on strained Si nanowire FETs at low temperature (2009)
  • Author(s): 土田育新, 清家綾, 高井一, 大泊巌, 渡邉孝信
  • Organizer: ECS
  • Place of Presentation: Vienna, Austria
• [Presentation] Impact of adequate selection of channel direction on(001)and(110)wafer orientation for strained nanowire transistors (2009)
  • Author(s): 清家綾, 高井一, 土田育新, 大泊巌, 渡邉孝信
  • Organizer: International Conference on Solid State Devices and Materials(SSDM)
  • Place of Presentation: Sendai
• [Presentation] Experimental investigation of electron-phonon scattering effect in strained Sinanowire FETs at low temperature (2009)
  • Author(s): 土田育新, 清家綾, 高井一, 大泊巌, 渡邉孝信
  • Organizer: International Conference on Solid State Devices and Materials(SSDM)
  • Place of Presentation: Sendai
• [Presentation] Atomistic Modeling of GeO2/Ge and SiO2/Si Interface Structures (2009)
  • Author(s): T.Onda, H.Yamamoto, R.Tosaka, I.Ohdomari, T.Watanabe
  • Organizer: International Conference on Solid State Devices and Materials(SSDM)
  • Place of Presentation: Sendai
• [Presentation] Simulation on the Heat Transport in a Silicon Nano-structure Covered with Oxide Films (2009)
  • Author(s): 図師知文, 渡邉孝信, 大泊巌, 谷口研二
  • Organizer: International Conference on Solid State Devices and Materials(SSDM)
  • Place of Presentation: Sendai
• [Presentation] Large-Scale Modeling of GeO2/Ge and SiO2/Si Interface Structures (2009)
  • Author(s): 恩田知弥, 山本英明, 登坂亮, 渡邉孝信
  • Organizer: Materials Research Society
  • Place of Presentation: Boston, MA
• [Presentation] Molecular Dynamics Simulation on Adsorption of Ribosomal Protein L2 onto Silica Surface (2009)
  • Author(s): R.Tosaka, H.Yamamoto, I.Ohdomari, T.Watanabe
  • Organizer: Materials Research Society
  • Place of Presentation: Boston, MA
• [Presentation] Performance evaluation of semiconductor device with asymmetric discrete dopant distribution (2009)
  • Author(s): 堀匡寛, 品田賢宏, 平圭吾, 谷井孝至, 遠藤哲郎, 大泊巌
  • Organizer: TECHCON 2009
  • Place of Presentation: Texas, America
• [Presentation] 分子動力学法によるGeO2/Ge界面のモデリング-SiO2/Siとの違い- (2009)
  • Author(s): 渡邉孝信, 恩田知弥, 登坂亮, 山本英明
  • Organizer: シリコン材料・デバイス研究会(SDM)
  • Place of Presentation: 東京大学, 目黒区
• [Presentation] Evaluation of transconductance enhancement of strained <110> and <100> channel Si nanowire Field-effect transistors fabricated on (100) or(11O) SOl wafer (2009)
  • Author(s): A. Seike, Y. Sugiura, I. Tsuchida, H. Takai, I. Ohdomari
  • Organizer: Workshop on Gate Stack Technology and Physics
  • Place of Presentation: Shizuoka
• [Presentation] Electrical characterization of strained Si nanowire FETs under the lowtemperature (2009)
  • Author(s): Y. Sugiura, A. Seike, I. Tsuchida, H. Takai, I. Ohdomari
  • Organizer: Workshop on Gate Stack Technology and Physics
  • Place of Presentation: Shizuoka
• [Presentation] 古典分子動力学法によるGeO_2/Ge界面構造の大規模モデリング (2009)
  • Author(s): 恩田知弥, 渡邉孝信, 大泊 巌
  • Organizer: ゲートスタック研究会(第14回)-材料・プロセス・評価の物理-
  • Place of Presentation: 静岡県
• [Presentation] 有機シラン自己組織化単分子膜上でのPC12細胞のパターニング (2009)
  • Author(s): 山本英明, 別府佑一, 佐々木康祐, 谷井孝至大泊 巌
  • Organizer: 春季第56回応用物理学関連連合講演会
  • Place of Presentation: 筑波大学
• [Presentation] 酸化膜に覆われたシリコンナノ構造中の熱輸送シミュレーション (2009)
  • Author(s): 図師知文, 渡邉孝信, 久木田健太郎, 鎌倉良成, 大泊 巌
  • Organizer: 春季第56回応用物理学関連連合講演会
  • Place of Presentation: 筑波大学
• [Presentation] 分子動力学法によるシリコンナノワイヤ/酸化膜界面のストレス分布の解析 (2009)
  • Author(s): 恩田知弥, 渡邉孝信, 山本英明, 大泊 巌
  • Organizer: 春季第56回応用物理学関連連合講演会
  • Place of Presentation: 筑波大学
• [Presentation] 膜タンパク質間相互作用の1分子蛍光イメージングのためのナノ加工スライドガラスの作製II (2009)
  • Author(s): 青木睦子, 三宅丈雄. 赤堀玲奈, 上野太郎, 大泊 巌
  • Organizer: 春季第56回応用物理学関連連合講演会
  • Place of Presentation: 筑波大学
• [Presentation] ボールレンズを利用した小型高分解能傾斜計の開発 (2009)
  • Author(s): 冨士良太, 松谷巌, 佐藤摩弥, 金川 清, 大泊 巌
  • Organizer: 春季第56回応用物理学関連連合講演会
  • Place of Presentation: 筑波大学
• [Presentation] 歪SiナノワイヤFETsの低温測定による電気伝導特性の評価 (2009)
  • Author(s): 杉浦裕樹, 清家 綾, 土田育新, 高井 -, 大泊 巌
  • Organizer: 春季第56回応用物理学関連連合講演会
  • Place of Presentation: 筑波大学
• [Presentation] 低速ドーパントイオン照射が誘起する表面ナノ構造変化のリアルタイムSTM観察 (2009)
  • Author(s): 神岡武文, 佐藤 光, 風間 裕, 吉田尚弘, 大泊 巌
  • Organizer: 春季第56回応用物理学関連連合講演会
  • Place of Presentation: 筑波大学
• [Presentation] ナノテクノロジーの未来⇔新しい産学協働のスタイル(基調講演) (2008)
  • Author(s): 大泊 巌
  • Organizer: 早大ナノテクノロジーフォーラム・「金属ガラス」イノベーションフォーラム合同シンポジウム
  • Place of Presentation: 早稲田大学大久保キャンパス
  • Year and Date: 2008-10-09
• [Presentation] 計算科学からみた低消費電力化技術 (2008)
  • Author(s): 渡邉孝信
  • Organizer: 日本学術振興会未踏・ナノデバイステクノロジー第151委員会第3回合同研究会
  • Place of Presentation: 化学会館、東京
  • Year and Date: 2008-09-19
• [Presentation] Ensemble Monte Carlo/Molecular Dynamics Simulation of Electr on Mobility in Silicon with Ordered Dopant Arrays (2008)
  • Author(s): T. Terunuma, T. Watanabe, T. Shinada, I. Ohdomari
  • Organizer: 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD2008)
  • Place of Presentation: Hakone, Kanagawa
  • Year and Date: 2008-09-09
• [Presentation] Prospect for Future Application of Si Nanotechnology (Keynote Talk) (2008)
  • Author(s): I. Ohdomari
  • Organizer: The 2^<nd> International Symposium “Ambient SoC ; Recent Topics in Nano Technology and Information Technology Applications
  • Place of Presentation: Waseda University
  • Year and Date: 2008-07-14
• [Presentation] Interface Related Issues in the Next Generation Si CMOS Technology (2008)
  • Author(s): I. Ohdomari
  • Organizer: 14^<th> International Conference on Solid Films and Surfaces
  • Place of Presentation: Dublin, Ireland
  • Year and Date: 2008-07-03
• [Presentation] Real-time STM observation of surface modification with low-energy do pant ion irradiation (2008)
  • Author(s): T. Kamioka, K. Sato, Y. Kazam a, T. Watanabe, I. Ohdomari
  • Organizer: 14^<th> International Conference on Solid Films and Surfaces
  • Place of Presentation: Dublin, Ireland
  • Year and Date: 2008-07-03
• [Presentation] X-ray diffraction profiles from organosilane monolayer/SiO_2 models (2008)
  • Author(s): H. Yamamoto, T. Watanabe, T. Tanii, I. Ohdomari
  • Organizer: 14^<th> International Conference on Solid Films and Surfaces
  • Place of Presentation: Dublin, Ireland
  • Year and Date: 2008-07-03
• [Presentation] 次世代-分子蛍光イメージング法の開発-ナノ加工スライドガラスを用いた生体分子間相互作用のリアルタイム一分子計測 (2008)
  • Author(s): 谷井孝至
  • Organizer: 国際バイオEXPO2008
  • Place of Presentation: 東京ビッグサイト
  • Year and Date: 2008-07-01
• [Presentation] ダイナミックボンド型分子動力学法の開発 (2008)
  • Author(s): 渡邉孝信
  • Organizer: 第21期CAMMフォーラム本例会
  • Place of Presentation: 虎ノ門パストラル
  • Year and Date: 2008-06-06
• [Presentation] Real-time STM observation of surface modification with low-energy dopant ion irradiation (2008)
  • Author(s): T.Kamioka, K.Sato, Y.Kazama, T.Watanabe, I. Ohdomari
  • Organizer: 14th International Conference on Solid Films and Surfaces
  • Place of Presentation: Dublin, Ireland.
• [Presentation] Interface Related Issues in the Next Generation Si CMOS Technology (2008)
  • Author(s): I.Ohdomari
  • Organizer: 14th International Conference on Solid Films and Surfaces
  • Place of Presentation: Dublin, Ireland.
• [Presentation] Transconductance enhancement by utilizing pattern dependent oxidation in silicon nanowire field-effect transistors (2008)
  • Author(s): A. Seike, T. Tange, I. Sano, Y. Sugiura, I. Ohdomari
  • Organizer: Electrochemical Society, Phoenix
  • Place of Presentation: AZ, USA
• [Presentation] Transconductance enhancement of Si nanowire transistors by oxide-indu ced strain (2008)
  • Author(s): A. Seike, T. Tange, I. Sano, Y. Sugiura, I. Ohdomari
  • Organizer: IEEE Int. Conf. on IC Design and Technology
  • Place of Presentation: Minatec, France
• [Presentation] 歪Siナノワイヤトランジスタにおけるトランスコンダクタンスェンハンスメント (2008)
  • Author(s): 清家 綾, 丹下智之, 佐野一拓, 大泊 巌
  • Organizer: 電子情報通信学会技術研究報告Silicon Device and Materials
  • Place of Presentation: 東京大学
• [Presentation] Our Trial to Apply Nanotechnology to Structural Health Monitoring (2008)
  • Author(s): I. Ohdomari
  • Organizer: ANCRiSST 2008
  • Place of Presentation: Waseda University
• [Presentation] Single Ion Implantation for Fluctuation Control (2008)
  • Author(s): T. Shinada, M. Hori, K. Taira, I. Ohdomari
  • Organizer: 17th International Conference on Ion Implantation Technology
  • Place of Presentation: Monterey, CA, USA
• [Presentation] Single-Ion Implantation for Single-Dopant Controlled Devices (2008)
  • Author(s): T. Shinada, M. Hori, K. Taira, I. Ohdomari
  • Organizer: 20th International Conference on the Application of Accelerators in Research and Industry
  • Place of Presentation: TX, USA
• [Presentation] 半導体位置検出素子を利用した変位計測システムの開発 (2008)
  • Author(s): 松谷巌, 冨士良大, 佐藤摩弥, 金川 清, 大泊 巌
  • Organizer: 秋季第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学、愛知県
• [Presentation] オクタデシルシラン単分子膜の高いフッ酸耐性の起源 (2008)
  • Author(s): 山本英明, 渡邉孝信, 谷井孝至, 大泊 巌
  • Organizer: 秋季第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学、愛知県
• [Presentation] ナノ導波路を用いたリアルタイム1分子蛍光イメージング法の開発 (2008)
  • Author(s): 三宅丈雄, 赤堀玲奈, 青木睦子, 上野太郎, 鮫島知哉, 大泊 巌
  • Organizer: 秋季第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学、愛知県
• [Presentation] 膜タンパク質間相互作用の1分子蛍光イメージングのためのナノ加工スライドガラスの作製 (2008)
  • Author(s): 青木睦子, 山岸 舞, 赤堀玲奈, 上野太郎, 鮫島知哉, 大泊 巌
  • Organizer: 秋季第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学、愛知県
• [Presentation] Ribosomal Protein L2-SiO_2基板間の相互作用に関する分子動力学シミュレーション (2008)
  • Author(s): 登坂 亮, 山本英明, 渡邉孝信, 大泊 巌
  • Organizer: 秋季第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学、愛知県
• [Presentation] 古典分子動力学法によるGeO_2/Ge界面構造の大規模モデリング (2008)
  • Author(s): 恩田知弥, 渡邉孝信, 大泊 巌
  • Organizer: 秋季第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学、愛知県
• [Presentation] 高温Si(111)表面への低速イオン照射効果の熱処理時間依存性 (2008)
  • Author(s): 神岡武文, 佐藤 光, 風間 裕, 大泊 巌
  • Organizer: 秋季第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学、愛知県
• [Presentation] ドーパントイオン照射によるSi(001)表面ナノ改質素過程のリアルタイムSTM観察 (2008)
  • Author(s): 佐藤 光, 神岡武文, 風間 裕, 大泊 巌
  • Organizer: 秋季第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学、愛知県
• [Presentation] 非対称な不純物原子配置を有する半導体デバイスの電気的特性評価 (2008)
  • Author(s): 堀 匡寛, 品田賢宏, 平 圭吾, 島本直伸, 大泊 巌
  • Organizer: 秋季第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学. 愛知県
• [Presentation] Transconductance enhancement of strained <110> and <100> Si nanowire channel field-effect transistors (2008)
  • Author(s): I. Tsuchida, A. Seike, Y. Sugiura, D . Kosemura, A. Ogura, I. Ohdomari
  • Organizer: Electrochemical society
  • Place of Presentation: Hawaii, USA
• [Presentation] Evaluation of transconductance enhancement of <110> and <100>-channel strained Si nanowire Field-effect transistors (2008)
  • Author(s): A. Seike, I. Tsuchida, D. Kosemura, A. Ogura, T. Watanabe, I. Ohdomari
  • Organizer: International workshop on dielectric thin films for future ULSI devices : science and technology
  • Place of Presentation: Tokyo
• [Presentation] Molecular dynamics simulation on a behavior of water molecules betw een AFM probe and SiO2 substrate (2008)
  • Author(s): R. Tosaka, H. Yamamoto, T. W atanabe, I. Ohdomari
  • Organizer: The 5th International Symposium on Surface Science and Nanotechnology (ISSS-5)
  • Place of Presentation: Waseda University
• [Presentation] Real-time STM observation of Si (III)-7×7surface modified by Au ion irradiation (2008)
  • Author(s): T. Kamioka, K. Sato, Y. Kazama, T. Watanabe, I. Ohdomari
  • Organizer: The 5th International Symposium on Surface Science and Nanotechnology (ISSS-5)
  • Place of Presentation: Waseda University
• [Presentation] Real-time STM observation of defects induced by low-energy dopant ion irradiation on high-temperature Si surface (2008)
  • Author(s): Y. Kazama, T. Kamioka, K. Sato, T. Watanabe, I. Ohdomari
  • Organizer: The 5th International Symposium on Surface Science and Nanotechnology (ISSS-5)
  • Place of Presentation: Waseda University
• [Presentation] Enhancement of hydrofluoric acid resistivity in octadecylsilane self-ass embled monolayers induced by post-deposition annealing (2008)
  • Author(s): H. Yamamoto, T. Watanabe, T. Tanii, I. Ohdomari
  • Organizer: The 5th International Symposium on Surface Science and Nanotechnology (ISSS-5)
  • Place of Presentation: Waseda University
• [Presentation] Crystal Orientation Dependency of Oxidation-Induced Strain in Silicon Nano Structures : A Molecular Simulation Study (2008)
  • Author(s): T. Onda, T. Watanabe, I. Ohdomari
  • Organizer: The 5th International Symposium on Surface Science and Nanotechnology (ISSS-5)
  • Place of Presentation: Waseda University
• [Presentation] Performance evaluation of semiconductor device with asymmetric dopant distribution (2008)
  • Author(s): M. Hori, T. Shinada, K. Taira, N. Shimamoto, I. Ohdomari
  • Organizer: The 5th International Symposium on Surface Science and Nanotechnology (ISSS-5)
  • Place of Presentation: Waseda University
• [Presentation] Fabrication of nanostructure array on glass-slide for single molecule fluorescence imaging of membrane proteins (2008)
  • Author(s): M. Aoki, M. Yamagishi, R. Akahori, T. Ueno, I. Ohdomari
  • Organizer: The 5th International Symposium on Surface Science and Nanotechnology (ISSS-5)
  • Place of Presentation: Waseda University
• [Presentation] Recent Molecular Nano Device Progress (2008)
  • Author(s): I. Ohdomari
  • Organizer: The 15th International Display Workshops(IDW'O8 )
  • Place of Presentation: Niigata