Project/Area Number |
20360135
|
Research Category |
Grant-in-Aid for Scientific Research (B)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Electronic materials/Electric materials
|
Research Institution | The University of Tokyo |
Principal Investigator |
|
Co-Investigator(Kenkyū-buntansha) |
YOSHITA Masahiro 東京大学, 物性研究所, 助教 (30292759)
|
Project Period (FY) |
2008 – 2010
|
Project Status |
Completed (Fiscal Year 2010)
|
Budget Amount *help |
¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000)
Fiscal Year 2010: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2009: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2008: ¥8,190,000 (Direct Cost: ¥6,300,000、Indirect Cost: ¥1,890,000)
|
Keywords | 薄膜・量子構造 / 量子細線 / レーザー / MBE / へき開再成長 / 量子細線レーザー / 低しきい値 / 光励起 / 電流注入 / 定量計測 / 絶対感度 |
Research Abstract |
We studied high-quality T-shaped GaAs studied quantum-wire lasers by cleaved-edge overgrowth in molecular-beam-epitaxy, demonstrate their low-threshold lasing, and investigated lasing and basic optical properties quantitatively, to examine advantages and performances predicted by seminal theoretical proposals. We fabricated current-injection 15-period quantum-wire lasers with a vertical p-n junction geometry, an inverted current-injection 15-period quantum-wire lasers with an inverted p-n junction geometry, current-injection 20-period quantum-wire lasers with a parallel p-n junction geometry, undoped and n-type-modulation-doped single quantum-wire lasers, and other laser devices. We made current injection and optical pumping to the sample devices, generated charge-neutral and charge-imbalanced electron-hole carriers, and measured their lasing properties, gain spectra, and peak gain quantitatively. We compared the experimental results with quantitative calculations on the basis of semiconductor Bloch equations, and obtained good agreements in peak gain values and overall gain spectra except for the low energy tail structures.
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