Fabrication of low-threshold quantum-wire lasers and study on their lasing properties and physics
Project/Area Number |
20360135
|
Research Category |
Grant-in-Aid for Scientific Research (B)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Electronic materials/Electric materials
|
Research Institution | The University of Tokyo |
Principal Investigator |
|
Co-Investigator(Kenkyū-buntansha) |
YOSHITA Masahiro 東京大学, 物性研究所, 助教 (30292759)
|
Project Period (FY) |
2008 – 2010
|
Project Status |
Completed (Fiscal Year 2010)
|
Budget Amount *help |
¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000)
Fiscal Year 2010: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2009: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2008: ¥8,190,000 (Direct Cost: ¥6,300,000、Indirect Cost: ¥1,890,000)
|
Keywords | 薄膜・量子構造 / 量子細線 / レーザー / MBE / へき開再成長 / 量子細線レーザー / 低しきい値 / 光励起 / 電流注入 / 定量計測 / 絶対感度 |
Research Abstract |
We studied high-quality T-shaped GaAs studied quantum-wire lasers by cleaved-edge overgrowth in molecular-beam-epitaxy, demonstrate their low-threshold lasing, and investigated lasing and basic optical properties quantitatively, to examine advantages and performances predicted by seminal theoretical proposals. We fabricated current-injection 15-period quantum-wire lasers with a vertical p-n junction geometry, an inverted current-injection 15-period quantum-wire lasers with an inverted p-n junction geometry, current-injection 20-period quantum-wire lasers with a parallel p-n junction geometry, undoped and n-type-modulation-doped single quantum-wire lasers, and other laser devices. We made current injection and optical pumping to the sample devices, generated charge-neutral and charge-imbalanced electron-hole carriers, and measured their lasing properties, gain spectra, and peak gain quantitatively. We compared the experimental results with quantitative calculations on the basis of semiconductor Bloch equations, and obtained good agreements in peak gain values and overall gain spectra except for the low energy tail structures.
|
Report
(4 results)
Research Products
(80 results)
-
-
-
-
[Journal Article] Effects of Mg doping on Optical andElectrical Properties of GaNAs MultipleQuantum Wells2011
Author(s)
Masahiro Shiraga, Yuko Nakai, Tomohiko Hirashima, Akinobu Kittaka, Mari Ebisu, Naoshi Takahashi, Takeshi Noda, MasatoOhmori, Hidefumi Akiyama, Noriaki Tsurumachi, Shunsuke Nakanishi, Hayato Miyagawa, Hiroshi Itoh, and Shyun Koshiba
-
Journal Title
Phys. Status Solidi C
Volume: 8
Pages: 420-422
Related Report
Peer Reviewed
-
[Journal Article] LaVO4 : Eu Phosphor films with enhanced Eusolubility2011
Author(s)
T. Higuchi, Y. Hotta, Y. Hikita, S. Maruyama, Y. Hayamizu, H. Akiyama, H. Wadati, D. G. Hawthorn, T. Z. Regier, R. I. R. Blyth, G. A. Sawatzky, and H. Y. Hwang
-
Journal Title
Appl. Phys. Lett
Volume: 98
Pages: 71902-71902
Related Report
Peer Reviewed
-
-
-
-
-
[Journal Article] Effects of Mg doping on Optical and Electrical Properties of GaNAs Multiple Quantum Wells2011
Author(s)
Masahiro Shiraga, Yuko Nakai, Tomohiko Hirashima, Akinobu Kittaka, Mari Ebisu, Naoshi Takahashi, Takeshi Noda, Masato Ohmori, Hidefumi Akiyama, Noriaki Tsurumachi, Shunsuke Nakanishi, Hayato Miyagawa, Hiroshi Itoh, Shyun Koshiba
-
Journal Title
Phys.Status Solidi C
Volume: 8
Pages: 420-422
Related Report
Peer Reviewed
-
[Journal Article] LaVO4 : Eu Phosphor films with enhanced Eu solubility2011
Author(s)
T.Higuchi, Y.Hotta, Y.Hikita, S.Maruyama, Y.Hayamizu, H.Akiyama, H.Wadati, D.G.Hawthorn, T.Z.Regier, R.I.R.Blyth, G.A.Sawatzky, H.Y.Hwang
-
Journal Title
Appl.Phys.Lett.
Volume: 98
Pages: 71902-71902
Related Report
Peer Reviewed
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
[Presentation] GaAs(110)基板上に作製した窒素δドープGaAsにおける等電子トラップからの発光特性評価2011
Author(s)
高宮健吾, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
Organizer
2011年春季第58回応用物理学関係連合講演会
Place of Presentation
神奈川工科大学
Related Report
-
-
-
-
-
-
-
-
-
-
-
[Presentation] 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光特性評価2010
Author(s)
高宮健吾, 遠藤雄太, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎3, 片山竜二, サノーピンサクンタム, 矢口裕之
Organizer
2010年秋季第71回応用物理学学術講演会
Place of Presentation
長崎大学文教キャンパス
Related Report
-
[Presentation] 窒素δドープGaAs中の等電子トラップを形成する窒素原子対配列に関する研究2010
Author(s)
星野真也, 遠藤雄太, 福島俊之, 高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
Organizer
2010年秋季第71回応用物理学学術講演会
Place of Presentation
長崎大学文教キャンパス
Related Report
-
[Presentation] 極低窒素濃度GaAsNにおける窒素ペアからの発光の窒素濃度依存性2010
Author(s)
石川輝, 八木修平, 土方泰斗, 吉田貞史, 岡野真人, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
Organizer
2010年秋季第71回応用物理学学術講演会
Place of Presentation
長崎大学文教キャンパス
Related Report
-
-
-
-
[Presentation] 様々な面方位基板上に作製した窒素δドープGaAs中の等電トラップからの発光(III)2010
Author(s)
福島俊之, 高宮健吾, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
Organizer
2010年春季第57回応用物理学関係連合講演会
Place of Presentation
東海大学湘南キャンパス
Related Report
-
-
-
-
-
-
-
-
-
-
-
[Presentation] 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光2009
Author(s)
高宮健吾, 遠藤雄太, 福島俊之, 土方泰人, 矢口裕之, 吉田貞史, 岡野真人, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
Organizer
2009年秋季第70回応用物理学会学術講演会
Place of Presentation
富山大学
Related Report
-
-
-
[Presentation] Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A.2009
Author(s)
T.Fukushima, M.Ito, Y.Hijikata, H, Yaguchi, S.Yoshida, M.Okano, M.Yoshita, H.Akiyama, S.Kuboya, R.Katayama, K.Onabe
Organizer
The 14^<th> International Conference on Modulated Semiconductor structures(MSS-14)
Place of Presentation
兵庫県神戸市
Related Report
-
-
-
-
-
-
-
-
-