| Budget Amount *help |
¥17,550,000 (Direct Cost: ¥13,500,000、Indirect Cost: ¥4,050,000)
Fiscal Year 2010: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2009: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2008: ¥7,800,000 (Direct Cost: ¥6,000,000、Indirect Cost: ¥1,800,000)
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| Research Abstract |
We report a novel technique for the fabrication of planar-type Ni-based single-electron transistors (SETs) using electromigration method induced by a field emission current. Coulomb blockade voltage of the devices operated at 300K was clearly modulated by the gate voltage quasi-periodically, resulting in the formation of multiple tunnel junctions of the SETs at room temperature. In addition, the resistance of the Ni nanogaps was varied by applying magnetic fields, and magnetoresistance (MR) ratio exhibited approximately 9% at 299K with the bias voltage of 33mV. These results clearly imply that electromigration procedure allows us to easily and simply fabricate planar-type Ni-based SETs operating at room temperature.
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