Fabrication of high-quality gate oxide at low temperature by evaporation of SiO nanopowder for flexible ICs

• Project/Area Number: 20360137
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: The University of Electro-Communications
• Principal Investigator: NOZAKI Shinji 電気通信大学, 大学院・情報理工学研究科, 教授 (20237837)
• Co-Investigator(Kenkyū-buntansha): ONO Hiroshi 電気通信大学, 大学院・情報理工学研究科, 助教 (00134867)
• Project Period (FY): 2008 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥18,460,000 (Direct Cost: ¥14,200,000、Indirect Cost: ¥4,260,000); Fiscal Year 2011: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000); Fiscal Year 2010: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000); Fiscal Year 2009: ¥7,280,000 (Direct Cost: ¥5,600,000、Indirect Cost: ¥1,680,000); Fiscal Year 2008: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000)
• Keywords: シリコン / 低温酸化膜 / 界面準位 / フレキシブル基板 / ゲート酸化膜 / 光酸化 / 真空蒸着 / ナノ粉末 / 低温作製 / quasi-static C-V / 界面準位密度 / シリコン酸化膜 / 紫外光 / MOS / 真空紫外光 / SiOナノ粉末 / C-t / 酸化 / SiO_2 / C-V

Research Abstract

The objective of the project is to deposit or grow the high-quality gate oxide for Si MOSFETs at temperatures of 200℃or lower. The process consisting of vacuum evaporation of SiO nanopowder, UV steam oxidation at 200℃and post metallization anneal in forming gas at 200℃has been successfully established to make the high-quality gate oxide with an interface state density of 4. 4×1011cm-2eV-1

Research Products

• [Journal Article] Microstructure developments of F-doped SiO2 thin filmsprepared by liquid phase deposition (2012)
  • Author(s): Shijun Yu, Jae Sung Lee, Shinji Nozaki, Junghyun Cho
  • Journal Title: Thin Solid Films Volume: 520 Pages: 1718-1723
  • Peer Reviewed
• [Journal Article] Microstructure developments of F-doped SiO2 thin films prepared by liquid phase deposition (2012)
  • Author(s): Shijun Yu, Jae Sung Lee, Shinji Nozaki, Junghyun Cho
  • Journal Title: Thin Solid Films Volume: 520 Pages: 1718-1723
  • Peer Reviewed
• [Journal Article] High-quality oxideformed by evaporation of SiO nanopowder : Application to MOSFET's on plasticsubstrates and GaN epilayers (2009)
  • Author(s): S. Nozaki, S. Kimura, A. Koizumi, H. Onoand K. Onoand K. Uchida
  • Journal Title: Materials Science in Semiconductor Processing Volume: 11 Pages: 384-389
  • Peer Reviewed
• [Journal Article] High-quality oxide formed by evaporation of SiO nanopowder : Application to MOSFET's on plastic substrates and GaN epilayers (2009)
  • Author(s): S.Nozaki, S.Kimura, A.Koizumi, H.Ono, K.Uchida
  • Journal Title: Materials Science in Semiconductor Processing 11 Pages: 384-389
  • Peer Reviewed
• [Journal Article] Photoluminescence of Sinanocrystals formed by the photosynthesis (2008)
  • Author(s): S. Nozaki, C. Y. Chen, S. Kimura, H. Ono, and K. Uchida
  • Journal Title: Thin Solid Films Volume: 517 Pages: 50-54
  • Peer Reviewed
• [Journal Article] Photoluminescence of Si nanocrystals formed by the photosynthesis (2008)
  • Author(s): S.Nozaki, C.Y.Chen, S.Kimura, H.Ono, K.Uchida
  • Journal Title: Thin Solid Films 517 Pages: 50-54
  • Peer Reviewed
• [Journal Article] Photoluminescence of Si nanocrystals formed by thephotosynthesis (2008)
  • Author(s): S. Nozaki, C. Y. Chen, S. Kimura, H. Ono, K. Uchida
  • Journal Title: Thin Solid Films 517 Pages: 50-54
  • Peer Reviewed
• [Presentation] UV酸化による半導体ニッケル酸化物の作製 (2011)
  • Author(s): 張東元、小泉淳、小野洋、内田和男、野崎眞次
  • Organizer: 電気通信大学・東京農工大学第8回合同シンポジウム
  • Place of Presentation: 東京農工大学
  • Year and Date: 2011-12-10
• [Presentation] XPSによる低温シリコン酸化膜の評価-フレキシブル基板上の集積回路をめざして (2011)
  • Author(s): 野崎眞次
  • Organizer: 日本電子EPMA・表面分析ユーザーズミーティング2011
  • Place of Presentation: 東京大学武田先端知ビル
  • Year and Date: 2011-10-07
• [Presentation] UV酸化による半導体ニッケル酸化物の作製 (2011)
  • Author(s): 張東元、小泉淳、内田和男、Ramakrishnan Veerabahu、野崎眞次
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学
  • Year and Date: 2011-09-01
• [Presentation] SiOナノ粉末への光照射によるSiナノクリスタルの形成機構 (2010)
  • Author(s): 杉本真矩、小泉淳、小野洋、内田和男、野崎眞次
  • Organizer: 第30回表面科学学術講演会
  • Place of Presentation: 大阪大学
  • Year and Date: 2010-11-05
• [Presentation] 真空紫外光照射によるSi/SiO2界面構造の改質 (2010)
  • Author(s): 山崎政宏、小泉淳、小野洋、内田和男、野崎眞次
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学
  • Year and Date: 2010-09-16
• [Presentation] フレキシブル基板、化合物半導体基板上のMOSFET作製用酸化シリコンナノ粒子:真空蒸着と光酸化による高品位酸化膜の作製 (2010)
  • Author(s): 野崎眞次
  • Organizer: ケースレー・シンポジウム2010
  • Place of Presentation: ホテルインターコンチネンタル東京ベイ
  • Year and Date: 2010-07-23
• [Presentation] フレキシブル基板、化合物半導体基板上のMOSFET作製用酸化シリコンナノ粒子:真空蒸着と光酸化による高品位酸化膜の作製 (2010)
  • Author(s): 野崎眞次
  • Organizer: ケースレー・シンポジウム2010
  • Place of Presentation: ホテルインターコンチネンタル東京ベイ(基調講演)
  • Year and Date: 2010-07-23
• [Presentation] C-t法による低温酸化膜MOSキャパシターの電気的特性評価 (2010)
  • Author(s): 高井伸彰、小池俊平、小野洋、内田和男、野崎眞次
  • Organizer: 電子情報通信学会東京支部学生会
  • Place of Presentation: 東京電機大学
  • Year and Date: 2010-03-13
• [Presentation] C-t法による低温酸化膜MOSキャパシターの電気的特性評価 (2010)
  • Author(s): 高井伸彰、小池俊平、小野洋、内田和男、野崎眞次
  • Organizer: 電子情報通信学会東京支部学生会講演会
  • Place of Presentation: 東京電機大学
  • Year and Date: 2010-03-13
• [Presentation] C-t法による低温酸化膜MOSキャパシターの電気的特性評価 (2010)
  • Author(s): 高井伸彰, 小池俊平, 小野洋, 内田和男, 野崎眞次
  • Organizer: 電子情報通信学会東京支部学生会講演論文集
  • Place of Presentation: 東京電機大学
  • Year and Date: 2010-03-13
• [Presentation] SiOナノ粒子への光照射によるシリコンナノ結晶の形成機構 (2009)
  • Author(s): 杉本真矩、小泉淳、小野洋、内田和男、野崎真次
  • Organizer: 電気通信大学・東京農工大学第6回合同シンポジウム
  • Place of Presentation: 東京農工大学
  • Year and Date: 2009-12-05
• [Presentation] SiO粉末への光照射によるSiナノ結晶の形成 (2008)
  • Author(s): 李宰盛、野崎真次、小泉淳、内田和男、小野洋
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学
  • Year and Date: 2008-09-03
• [Presentation] High-quality oxideformed by evaporation of SiO nanopowder : Application to MOSFET's on plasticsubstrates and GaN epilayers (2008)
  • Author(s): S. Nozaki, S. Kimura, A. Koizumi, H. Onoand K. Uchida
  • Organizer: The E-MRS2008 Spring Meeting
  • Place of Presentation: Strasbourg, France
  • Year and Date: 2008-05-30
• [Presentation] High-quality oxide formed by evaporation of SiO nanopowder : Application to MOSFET's on plastic substrates and GaN epilayers (2008)
  • Author(s): S.Nozaki, S.Kimura, A.Koizumi, H.Ono, K.Uchida
  • Organizer: The E-MRS 2008 Spring Meeting
  • Place of Presentation: Strasbourg, France(招待講演)
  • Year and Date: 2008-05-30
• [Presentation] High-quality oxide formed by evaporation of SiO nanopowder : Application to MOSFET's on plastic substrates and GaN epilayers(招待講演) (2008)
  • Author(s): S. Nozaki, S. Kimura, A. Koizumi, H. Ono, K. Uchida
  • Organizer: The E-MRS 2008 Spring Meeting, SymposiumJ
  • Place of Presentation: Strasbourg, France
  • Year and Date: 2008-05-30
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