Fabrication of high-quality gate oxide at low temperature by evaporation of SiO nanopowder for flexible ICs
| Project/Area Number |
20360137
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Electro-Communications |
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Principal Investigator |
NOZAKI Shinji 電気通信大学, 大学院・情報理工学研究科, 教授 (20237837)
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| Co-Investigator(Kenkyū-buntansha) |
ONO Hiroshi 電気通信大学, 大学院・情報理工学研究科, 助教 (00134867)
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| Project Period (FY) |
2008 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥18,460,000 (Direct Cost: ¥14,200,000、Indirect Cost: ¥4,260,000)
Fiscal Year 2011: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2010: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2009: ¥7,280,000 (Direct Cost: ¥5,600,000、Indirect Cost: ¥1,680,000)
Fiscal Year 2008: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000)
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| Keywords | シリコン / 低温酸化膜 / 界面準位 / フレキシブル基板 / ゲート酸化膜 / 光酸化 / 真空蒸着 / ナノ粉末 / 低温作製 / quasi-static C-V / 界面準位密度 / シリコン酸化膜 / 紫外光 / MOS / 真空紫外光 / SiOナノ粉末 / C-t / 酸化 / SiO_2 / C-V |
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| Research Abstract |
The objective of the project is to deposit or grow the high-quality gate oxide for Si MOSFETs at temperatures of 200℃or lower. The process consisting of vacuum evaporation of SiO nanopowder, UV steam oxidation at 200℃and post metallization anneal in forming gas at 200℃has been successfully established to make the high-quality gate oxide with an interface state density of 4. 4×1011cm-2eV-1
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Report
(6 results)
Research Products
(27 results)
