| Budget Amount *help |
¥18,590,000 (Direct Cost: ¥14,300,000、Indirect Cost: ¥4,290,000)
Fiscal Year 2011: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2010: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2009: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2008: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
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| Research Abstract |
III-N-V semiconductors, such as GaInNAs,are material systems of interest showing prospects for the next generation optical devices such as laser diodes. Due to the requirement of low growth temperature, the as-grown samples of III-N-V semiconductors are known to contain a quantity of defects within the crystal. Post growth annealing is then a vital technique for its application to devices. However, the phenomena induced by annealing within the material system are still well not understood. We here employ large-scale synchrotron radiation facilities for the further investigation. X-ray absorption fine structure (XAFS) is a strong tool for the analysis of local atomic structure of materials. High-resolution hard X-ray photoelectron spectroscopy (HXPES) with the larger escape depth of photoelectrons as deep as several-tens nm facilitates non-destructive studies of bulk materials, nanoscale buried layers. Comparing the electrical status and bond configuration obtained by those, we analyze the annealing effect on the atomic relaxation of GaInNAs material system.
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