| Project/Area Number |
20360140
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | Osaka University |
|---|
Principal Investigator |
MORI Yusuke Osaka University, 工学研究科, 教授 (90252618)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
KITAOKA Yasuo 大阪大学, 工学研究科, 教授 (70444560)
IMADE Mamoru 大阪大学, 工学研究科, 特任助教 (40457007)
KAWAMURA Fumio 大阪大学, 工学研究科, 研究員 (80448092)
|
|---|
| Project Period (FY) |
2008 – 2010
|
| Project Status |
Completed (Fiscal Year 2010)
|
| Budget Amount *help |
¥19,370,000 (Direct Cost: ¥14,900,000、Indirect Cost: ¥4,470,000)
Fiscal Year 2010: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2009: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2008: ¥13,000,000 (Direct Cost: ¥10,000,000、Indirect Cost: ¥3,000,000)
|
|---|
| Keywords | 窒化ガリウム / Naフラックス法 / 液相エピタキシャル / 溶液攪拌 / GaN / Seeded Growth / 成長モード / 低転位化 / 長時間成長 / LPE / 対流シミュレーション |
|---|
| Research Abstract |
The seeded growth of bulk GaN single crystals on a small GaN seed was performed by Na flux method. The addition of carbon into Ga/Na solution prevented the formation of polycrystals on a crucible wall, resulted in the promotion of GaN growth on a seed. Sr, Ba and Ca additives changed the growth habit from pyramidal shape to prism shape. In addition, the growth rate on a seed dramatically increased by stirring the solution. Using these techniques, the long-term growth of 600h enabled to obtain the prism-shaped bulk GaN single crystal (9.0mm width and 11mm height, with full widths at half maximum of GaN (10-11) X-ray rocking curve of 20~50 arcsec).
|
