Crystal Growth of nonpolar a-plane GaN on r-plane sapphire substrate and the application to high efficiency green light emitting diodes
| Project/Area Number |
20360141
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Yamaguchi University |
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Principal Investigator |
TADATOMO Kazuyuki Yamaguchi University, 大学院・理工学研究科, 教授 (10379927)
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| Co-Investigator(Kenkyū-buntansha) |
KUWANO Noroyoki 九州大学, 産学連携センター, 教授 (50038022)
OKADA Narihito 山口大学, 大学院・理工学研究科, 助教 (70510684)
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000)
Fiscal Year 2010: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2009: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2008: ¥9,230,000 (Direct Cost: ¥7,100,000、Indirect Cost: ¥2,130,000)
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| Keywords | LED / 発光ダイオード / GaN / 無極性面 / 半極性面 / 結晶成長 / MOVPE / サファイア基板 |
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| Research Abstract |
The experimental crystal growth of a-plane GaN on r-plane sapphire substrate was carried out. Through this experiment, we have developed novel technology to grow semi-polar {11-22} plane GaN on the r-plane patterned sapphire substrate (r-PSS) with high quality and large diameter by metal-organic vapor phase epitaxy (MOVPE). We only use the basic and standard growth technology of c-plane GaN on the c-plane sapphire. Dislocation density of the {11-22} GaN is approximately 1×10^8cm(-2). The LED structure was fabricated on the {11-22} GaN template on the r-PSS. The blue-shift of the emission peak wavelength of the {11-22} LED as the increasing in injection current from 20mA to 100mA is smaller than that of c-plane LED.
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Report
(4 results)
Research Products
(67 results)
