Crystal Growth of nonpolar a-plane GaN on r-plane sapphire substrate and the application to high efficiency green light emitting diodes

• Project/Area Number: 20360141
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Yamaguchi University
• Principal Investigator: TADATOMO Kazuyuki Yamaguchi University, 大学院・理工学研究科, 教授 (10379927)
• Co-Investigator(Kenkyū-buntansha): KUWANO Noroyoki 九州大学, 産学連携センター, 教授 (50038022) ; OKADA Narihito 山口大学, 大学院・理工学研究科, 助教 (70510684)
• Project Period (FY): 2008 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000); Fiscal Year 2010: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000); Fiscal Year 2009: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000); Fiscal Year 2008: ¥9,230,000 (Direct Cost: ¥7,100,000、Indirect Cost: ¥2,130,000)
• Keywords: LED / 発光ダイオード / GaN / 無極性面 / 半極性面 / 結晶成長 / MOVPE / サファイア基板

Research Abstract

The experimental crystal growth of a-plane GaN on r-plane sapphire substrate was carried out. Through this experiment, we have developed novel technology to grow semi-polar {11-22} plane GaN on the r-plane patterned sapphire substrate (r-PSS) with high quality and large diameter by metal-organic vapor phase epitaxy (MOVPE). We only use the basic and standard growth technology of c-plane GaN on the c-plane sapphire. Dislocation density of the {11-22} GaN is approximately 1×10^8cm(-2). The LED structure was fabricated on the {11-22} GaN template on the r-PSS. The blue-shift of the emission peak wavelength of the {11-22} LED as the increasing in injection current from 20mA to 100mA is smaller than that of c-plane LED.

Research Products

• [Journal Article] Development of patterned sapphire substrate and the application to the growth of non-polar and semi-polar GaN for light-emitting diodes (2011)
  • Author(s): K.Tadatomo, N.Okada
  • Journal Title: Proceedings of SPIE Vol.7954
  • Peer Reviewed
• [Journal Article] Development of patterned sapphire substrate and the application to the growth of non-polar and semi-polar GaN for light-emitting diodes (2011)
  • Author(s): Kazuyuki Tadatomo
  • Journal Title: Proceedings of SPIE Volume: 7954
  • Peer Reviewed
• [Journal Article] Growth Mechanism of Nonpolar and Semipolar GaN Layers from Sapphire Sidewalls on Various Maskless Patterned Sapphire Substrates (2010)
  • Author(s): N.Okada, H.Oshita, A.Kurisu, K.Tadatomo
  • Journal Title: Japanese Journal of Applied Physics Vol.50
  • NAID: 210000070128
  • Peer Reviewed
• [Journal Article] Characterization of semipolar (11-22) GaN on c-plane sapphire sidewall of patterned r-plane sapphire substrate without SiO2 mask (2010)
  • Author(s): A.Kurisu, K.Murakami, Y.Abe, N.Okada, K.Tadatomo
  • Journal Title: Physica Status Solidi (c) Vol.7 Pages: 2059-2062
  • Peer Reviewed
• [Journal Article] Growth mechanism of nonpolar m-plane GaN on maskless patterned a-plane sapphire substrate (2010)
  • Author(s): Yuji Kawashima
  • Journal Title: Physica Status Solidi (c) Volume: 7 Pages: 2066-2068
  • Peer Reviewed
• [Journal Article] Characterization of semipolar (11-22) GaN on c-plane sap-phire sidewall of patterned r-plane sapphire substrate without SiO_2 mask (2010)
  • Author(s): Akihiro Kurisu
  • Journal Title: Physica Status Solidi (c) Volume: 7 Pages: 2059-2062
  • Peer Reviewed
• [Journal Article] Growth Mechanism of Nonpolar and Semipolar GaN Layers from Sapphire Sidewalls on Various Maskless Patterned Sapphire Substrates (2010)
  • Author(s): Narihito Okada
  • Journal Title: Japanese Journal of Applied Physics Volume: 50
  • NAID: 210000070128
  • Peer Reviewed
• [Journal Article] Growth of Semiconductor (11-22) GaN Layer by Controlling Anisotropic Growth Rates in r-Plane Patterned Sapphire Substrate (2009)
  • Author(s): N.Okada, A.Kurisu, K.Murakami, K.Tadatomo
  • Journal Title: Applied Physics Express Vol.2
  • Peer Reviewed
• [Journal Article] Growth of m-GaN layers by epitaxial lateral overgrowth from sapphire sidewalls (2009)
  • Author(s): N.Okada, et al.
  • Journal Title: Physica Status Solidi (a) 206 Pages: 1164-1167
  • Peer Reviewed
• [Journal Article] Growth of Semiconductor (11-22) GaN Layer by Controlling Anisotropic Growth Rates in r-Plane Patterned Sapphire Substrate (2009)
  • Author(s): N.Okada, et al.
  • Journal Title: Applied Physics Express 2
  • Peer Reviewed
• [Journal Article] サファイア加工基板のGaN成長の新展開 (2009)
  • Author(s): 只友一行, 他
  • Journal Title: 応用物理 79 Pages: 59-63
  • Peer Reviewed
• [Journal Article] サファイア基板上への新しい結晶成長技術 -照明用発光ダイオードの高効率化への取り組み- (2009)
  • Author(s): 只友一行, 他
  • Journal Title: 応用電子物性分科会研究例会資料 15 Pages: 148-152
• [Journal Article] Direct Growth of m-plane GaN with Epitaxial Lateral Overgrowth from c-plane Sidewall of a-plane Sapphire (2008)
  • Author(s): N.Okada, Y.Kawashima, K.Tadatomo
  • Journal Title: Applied Physics Express Vol.1
  • NAID: 10025082981
  • Peer Reviewed
• [Journal Article] Direct Growth of m-plane GaN with Epitaxial Lateral Overgrowth from c-plane Sidewall of a-plane Sapphire (2008)
  • Author(s): N. Okada
  • Journal Title: Applied Physics Express 1
  • NAID: 10025082981
  • Peer Reviewed
• [Presentation] Development of patterned sapphire substrate and the application to the growth of nonpolar and semipolar GaN for light-emitting diodes, Workshop on Frontier Photonics and Electronic Materials and Devices (2011)
  • Author(s): 只友一行
  • Organizer: 2011 German-Japanese-Spanish Joint Workshop
  • Place of Presentation: Granada, Spain.
  • Year and Date: 2011-03-17
• [Presentation] Development of patterned sapphire substrate and the application to the growth of nonpolar and semipolar GaN for light-emitting diodes (2011)
  • Author(s): Kazuyuki Tadatomo
  • Organizer: Workshop on Frontier Photonics and Electronic Materials and Devices, 2011 German-Japanese-Spanish Joint Workshop
  • Place of Presentation: Granada, Spain
  • Year and Date: 2011-03-17
• [Presentation] Development of patterned sapphire substrate and the application to the growth of nonpolar and semipolar GaN for light-emitting diodes (2011)
  • Author(s): 只友一行
  • Organizer: SPIE Photonics West 2011
  • Place of Presentation: San Francisco, USA.
  • Year and Date: 2011-01-27
• [Presentation] Development of patterned sapphire substrate and the application to the growth of nonpolar and semipolar GaN for light-emitting diodes (2011)
  • Author(s): Kazuyuki Tadatomo
  • Organizer: SPIE Photonics West 2011
  • Place of Presentation: San Francisco, California, USA
  • Year and Date: 2011-01-27
• [Presentation] サファイア加工基板を用いた非極性面GaN成長とその成長機構 (2010)
  • Author(s): 只友一行
  • Organizer: 第146回KASTECセミナー
  • Place of Presentation: 九州大学,福岡県
  • Year and Date: 2010-12-16
• [Presentation] サファイア加工基板を用いたGaN面方位制御技術 (2010)
  • Author(s): 只友一行
  • Organizer: 国立大学法人 三重大学 第24回CUTEセミナー
  • Place of Presentation: 三重県,三重大学
  • Year and Date: 2010-11-25
• [Presentation] サファイア加工基板上の窒化物半導体成長 (2010)
  • Author(s): 只友一行
  • Organizer: (財)科学技術交流財団分野別研究会LED応用研究会(第2回)
  • Place of Presentation: 名城大学,愛知県
  • Year and Date: 2010-10-19
• [Presentation] サファイア加工基板上の窒化物半導体成長 (2010)
  • Author(s): 只友一行
  • Organizer: (財)科学技術交流財団 分野別研究会LED応用研究会(第2回)
  • Place of Presentation: 愛知県,名城大学
  • Year and Date: 2010-10-19
• [Presentation] Selective area growth of semipolar and nonpolar GaN from sapphire sidewall on patterned sapphire substrate using low-temperature GaN buffer layer (2010)
  • Author(s): H.Oshita
  • Organizer: International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: Tampa, Florida, USA.
  • Year and Date: 2010-09-23
• [Presentation] Selective area growth of semipolar and nonpolar GaN from sapphire sidewall on patterned sapphire substrate using low-temperature GaN buffer layer (2010)
  • Author(s): Hiroyasu Oshita
  • Organizer: International Workshop on Nitride semiconductors(IWN 2010)
  • Place of Presentation: Tempa, Florida, USA
  • Year and Date: 2010-09-23
• [Presentation] Growth of semipolar{10-11}GaN from c-plane-like sapphire sidewall of patterned n-plane sapphire substrate (2010)
  • Author(s): Masaki Takami
  • Organizer: International Workshop on Nitride semiconductors (IWN 2010)
  • Place of Presentation: Tempa, Florida, USA
  • Year and Date: 2010-09-20
• [Presentation] サファイア基板の浅いエッチングによるGaNの選択成長 (2010)
  • Author(s): 古家大士
  • Organizer: 2010年秋季第71回応用物理学会関係連合学術講演会
  • Place of Presentation: 長崎大学,長崎県
  • Year and Date: 2010-09-15
• [Presentation] サファイア加工基板上へ成長した非極性面GaNを用いたLEDの作製 (2010)
  • Author(s): 田渕慎一
  • Organizer: 2010年秋季第71回応用物理学会関係連合学術講演会
  • Place of Presentation: 長崎県,長崎大学
  • Year and Date: 2010-09-15
• [Presentation] r面サファイア加工基板上へ成長した{11-22}GaN上への厚膜InGaNの成長 (2010)
  • Author(s): 栗栖彰宏
  • Organizer: 2010年秋季第71回応用物理学会関係連合学術講演会
  • Place of Presentation: 長崎県,長崎大学
  • Year and Date: 2010-09-15
• [Presentation] オフ角の付いたn面サファイア加工基板上におけるInGaN量子井戸からの多色発光 (2010)
  • Author(s): 高見成希
  • Organizer: 2010年秋季第71回応用物理学会関係連合学術講演会
  • Place of Presentation: 長崎県,長崎大学
  • Year and Date: 2010-09-15
• [Presentation] 窒化処理を用いたサファイア加工基板上の非極性GaNの成長 (2010)
  • Author(s): 大下弘康
  • Organizer: 2010年秋季第71回応用物理学会関係連合学術講演会
  • Place of Presentation: 長崎県,長崎大学
  • Year and Date: 2010-09-15
• [Presentation] サファイア基板の浅いエッチングによるGaNの選択成長 (2010)
  • Author(s): 古家大士
  • Organizer: 2010年秋季第71回応用物理学会関係連合学術講演会
  • Place of Presentation: 長崎県,長崎大学
  • Year and Date: 2010-09-15
• [Presentation] 異種面で構成された窒化物半導体上の多重量子井戸の評価 (2010)
  • Author(s): 岡田成仁
  • Organizer: 日本結晶成長学会 ナノ構造・エピタキシャル成長分科会第2回窒化物結晶成長講演会
  • Place of Presentation: 三重県, 三重大学
  • Year and Date: 2010-05-15
• [Presentation] 浅い溝を有したr面サファイア加工基板上{11-22}GaNの成長と低転位密度化 (2010)
  • Author(s): 古家大士
  • Organizer: 2011年春季第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川県,神奈川工科大学(地震の影響で中止。予稿集の発行を以って発表したと見なす)
  • Year and Date: 2010-03-26
• [Presentation] r面サファイア加工基板上へ成長した半極性{11-22}面GaN上のMQWsの光学評価 (2010)
  • Author(s): 内田健充
  • Organizer: 2011年春季第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川県,神奈川工科大学(地震の影響で中止。予稿集の発行を以って発表したと見なす)
  • Year and Date: 2010-03-26
• [Presentation] n面サファイア加工基板上の半極性{10-10}GaNの評価 (2010)
  • Author(s): 高見成希
  • Organizer: 2011年春季第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川県,神奈川工科大学(地震の影響で中止。予稿集の発行を以って発表したと見なす)
  • Year and Date: 2010-03-26
• [Presentation] {11-22}GaN上の厚膜InGaNの成長と評価 (2010)
  • Author(s): 岡田成仁
  • Organizer: 2011年春季第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川県,神奈川工科大学(地震の影響で中止。予稿集の発行を以って発表したと見なす)
  • Year and Date: 2010-03-26
• [Presentation] テラス幅の広いr面サファイア加工基板を用いた{11-22}GaNの成長 (2010)
  • Author(s): 栗栖彰宏
  • Organizer: 2010年春季第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学,神奈川県
  • Year and Date: 2010-03-18
• [Presentation] テラス幅の広いr面サファイア加工基板を用いた {11-22} GaNの成長 (2010)
  • Author(s): 栗栖彰宏, 他
  • Organizer: 2010年春季第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学(神奈川県)
  • Year and Date: 2010-03-18
• [Presentation] n面サファイア加工基板上c面側壁からの半極性 {10-11} GaN選択横方向成長 (2010)
  • Author(s): 栗栖彰宏, 他
  • Organizer: 2010年春季第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学(神奈川県)
  • Year and Date: 2010-03-18
• [Presentation] マスクレスm面サファイア加工基板上の非極性GaNの成長 (2010)
  • Author(s): 大下弘康, 他
  • Organizer: 2010年春季第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学(神奈川県)
  • Year and Date: 2010-03-18
• [Presentation] 窒化処理を行ったサファイア加工基板上GaNの側壁選択成長 (2010)
  • Author(s): 岡田成仁, 他
  • Organizer: 2010年春季第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学(神奈川県)
  • Year and Date: 2010-03-18
• [Presentation] Growth mechanism of nonpolar m-GaN on patterned a-plane sapphire substrate (2009)
  • Author(s): Y.Kawashima, et al.
  • Organizer: The 8th International Conference on Nitride Semiconductors (ICNS-8)
  • Place of Presentation: Jeju, Korea
  • Year and Date: 2009-10-22
• [Presentation] Epitaxial lateral overgrowth of semipolar (11-22) GaN from c-plane sapphire sidewall of patterned r-plane sapphire substrate without SiO_2 mask (2009)
  • Author(s): K.Kurisu, et al.
  • Organizer: The 8th International Conference on Nitride Semiconductors (ICNS-8)
  • Place of Presentation: Jeju, Korea
  • Year and Date: 2009-10-22
• [Presentation] Epitaxial lateral overgrowth of semipolar (11-22) GaN from c-plane sapphire sidewall of patterned r-plane sapphire substrate without SiO_2 mask (2009)
  • Author(s): 栗栖彰宏
  • Organizer: The 8th International Conference on Nitride Semiconductors (ICNS-8)
  • Place of Presentation: Jeju, Korea.
  • Year and Date: 2009-10-21
• [Presentation] 半極性 {11-22} GaN成長におけるr面サファイア加工基板のオフ角の最適化 (2009)
  • Author(s): 栗栖彰宏, 他
  • Organizer: 2009年秋季 第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学
  • Year and Date: 2009-09-10
• [Presentation] マスクレスサファイア加工基板上の非極性GaNの成長メカニズム (2009)
  • Author(s): 川嶋佐治, 他
  • Organizer: 2009年秋季 第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学
  • Year and Date: 2009-09-10
• [Presentation] a面サファイア加工基板上に成長するm面GaNの成長配向依存性 (2009)
  • Author(s): 川嶋佑治
  • Organizer: 応用物理学関係連合講演会
  • Place of Presentation: 筑波大学, 茨城県
  • Year and Date: 2009-03-30
• [Presentation] サファイア加工基板を使った非極性面GaNのMOVPE成長 (2009)
  • Author(s): 只友-行
  • Organizer: 日本学術振興会161委員会/162委員会合同研究会
  • Place of Presentation: 鳥羽市, 三重県
  • Year and Date: 2009-03-13
• [Presentation] Direct growth of m-plane GaN on grooved-patterned a-plane sapphire substrate with SiO_2 mask (2008)
  • Author(s): N.Okada
  • Organizer: International Workshop on Nitride Semiconductors (IWN 2008)
  • Place of Presentation: Montreux, Switzerland.
  • Year and Date: 2008-10-06
• [Presentation] Direct growth of m-plane GaN on grooved-patterneda-plane sapphire substrate with SiO2 mask (2008)
  • Author(s): N. Okada
  • Organizer: International Workshop on Nitride Semiconductors (IWN 2008)
  • Place of Presentation: Montreux, Switzerland
  • Year and Date: 2008-10-06
• [Presentation] Off-Angle Dependence of Void Formation and Defect Behavior in a-Plane MOVPE-GaN on r-Plane Sapphire Substrate (2008)
  • Author(s): N. Kuwano
  • Organizer: International Workshop on Nitride Semiconductors (IWN 2008)
  • Place of Presentation: Montreux, Switzerland
  • Year and Date: 2008-10-06
• [Presentation] 側壁避択横方向成長を用いたa面サファイア加工基板上のm面GaN成長 (2008)
  • Author(s): 川嶋佑治
  • Organizer: 応用物理学会学術講演会
  • Place of Presentation: 中部大学, 愛知県
  • Year and Date: 2008-09-03
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• [Patent(Industrial Property Rights)] 多波長発光素子及びその製造方法 (2011)
  • Inventor(s): 只友一行, 岡田成仁
  • Industrial Property Rights Holder: 国立大学法人 山口大学
  • Industrial Property Number: 2011-053393
  • Filing Date: 2011-03-10
• [Patent(Industrial Property Rights)] 窒化ガリウム結晶積層基板及びその製造方法 (2011)
  • Inventor(s): 古家大士, 東正信, 只友一行, 岡田成仁
  • Industrial Property Rights Holder: 株式会社トクヤマ,国立大学法人山口大学
  • Industrial Property Number: 2011-049487
  • Filing Date: 2011-03-07
• [Patent(Industrial Property Rights)] 多波長発光素子及びその製造方法 (2011)
  • Inventor(s): 只友一行, 岡田成仁
  • Industrial Property Rights Holder: 山口大学
  • Filing Date: 2011-03-18
• [Patent(Industrial Property Rights)] 多波長発光素子及びその製造方法 (2011)
  • Inventor(s): 只友一行, 岡田成仁
  • Industrial Property Rights Holder: 山口大学
  • Filing Date: 2011-03-10
• [Patent(Industrial Property Rights)] 窒化ガリウム結晶積層基板及びその製造方法 (2011)
  • Inventor(s): 古家大士, 東正信, 只友一行, 岡田成仁
  • Industrial Property Rights Holder: トクヤマ,山口大学
  • Filing Date: 2011-03-07
• [Patent(Industrial Property Rights)] 半導体基板及びその製造方法 (2010)
  • Inventor(s): 只友一行、岡田成仁
  • Industrial Property Rights Holder: 山口大学
  • Filing Date: 2010-02-23
• [Patent(Industrial Property Rights)] 半導体基板およびその製造方法 (2009)
  • Inventor(s): 只友一行, 岡田成仁
  • Industrial Property Rights Holder: 国立大学法人山口大学
  • Filing Date: 2009-08-20
• [Patent(Industrial Property Rights)] 半導体基板およびその製造方法 (2009)
  • Inventor(s): 只友一行、岡田成仁
  • Industrial Property Rights Holder: 山口大学
  • Filing Date: 2009-08-20
  • Overseas
• [Patent(Industrial Property Rights)] サファイア基板の製造方法および半導体装置 (2009)
  • Inventor(s): 只友一行、岡田成仁
  • Industrial Property Rights Holder: 山口大学
  • Filing Date: 2009-02-09
  • Overseas
• [Patent(Industrial Property Rights)] 半導体発光素子の製造方法 (2009)
  • Inventor(s): 只友一行, 岡田成仁
  • Industrial Property Rights Holder: 山口大学
  • Filing Date: 2009-03-09
• [Patent(Industrial Property Rights)] 半導体発光素子の製造方法 (2009)
  • Inventor(s): 只友一行, 岡田成仁
  • Industrial Property Rights Holder: 山口大学
  • Filing Date: 2009-03-10