Fabrication of injection-type infrared light emitting devices for high-speed integrated circuits and investigation of the light emission mechanism
| Project/Area Number |
20360144
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kumamoto University |
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Principal Investigator |
NAKAMURA Yusui Kumamoto University, 大学院・自然科学研究科, 教授 (00381004)
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| Co-Investigator(Kenkyū-buntansha) |
TSUCHIYA Masahiro 独立行政法人情報通信研究機構, 上席研究員 (50183869)
NAKA Yoshihiro 熊本大学, 大学院・自然科学研究科, 助教 (30305007)
YAMAMOTO Naokatsu 独立行政法人情報通信研究機構, 第一研究部門新世代ネットワーク研究センター, 研究員 (60328523)
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥19,110,000 (Direct Cost: ¥14,700,000、Indirect Cost: ¥4,410,000)
Fiscal Year 2010: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2009: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2008: ¥10,920,000 (Direct Cost: ¥8,400,000、Indirect Cost: ¥2,520,000)
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| Keywords | 電気・電子材料 / シリコンフォトニクス / 赤外発光素子 / 発光素子 / 酸化物 / 希土類 / 赤外光 / 集積回路 / 酸化珪素 / エルビウム |
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| Research Abstract |
It is important to establish optical interconnection technology for high-speed integrated circuits. We have proposed and developed a new light emitting device, which is composed of an Er-doped oxide layer sandwiched by wide bandgap semiconductors. Using the devices, we have successfully observed infrared electroluminescence at wavelength of 1.5μm from low operation voltage of 10V at room temperature.
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Report
(4 results)
Research Products
(46 results)
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[Presentation] Infrared photo-luminescence properties of Er-doped SnO_22009
Author(s)
K.Kisu, K.Koyama, S.Soneda, A.Kotake, Y.Naka, M.Tsuchiya, Y.Nakamura
Organizer
The Proceedings of The Workshop of Impurity Based Electroluminescent Devices and Materials (IBEDM-2009)
Place of Presentation
Abstr#50(The Hotel Golden Bahia de Tossa & Spa, Tossa de Mar, Spain.)
Year and Date
2009-10-03
Related Report
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[Presentation] Infrared electro-luminescence at 1.5μm from Er-doped SiOx2009
Author(s)
Y.Nakamura, S.Soneda, S.Nakano, T.Hikida, T.Sumiyoshi, K.Kisu, Y.Naka, M.Tsuchiya
Organizer
The Proceedings of The Workshop of Impurity Based Electroluminescent Devices and Materials (IBEDM-2009)(Invited talk)
Place of Presentation
Abstr#25(The Hotel Golden Bahia de Tossa & Spa, Tossa de Mar, Spain.)
Year and Date
2009-10-02
Related Report
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[Presentation] Er添加SnO_2薄膜の赤外発光特性2009
Author(s)
木須光一郎, 高山和也, 曽根田真也, 高武明真, 中良弘, 土屋昌弘, 中村有水
Organizer
2009年秋季第70回応用物理学会学術講演会
Place of Presentation
30a-TC-5(富山大学)
Year and Date
2009-09-10
Related Report
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[Presentation] 1.5μm Photoluminescence from Conductive Er-doped SnOx2008
Author(s)
K.Kisu, S.Soneda, A.Kotake, Y.Naka, N.Yamamoto, M.Tsuchiya, Y.Nakamura
Organizer
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials
Place of Presentation
P-8-4(558-559)(Tsukuba International Congress Center, Ibaraki, Japan.)
Year and Date
2008-09-25
Related Report
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[Presentation] 1.5μm Light Emission from Er-doped SiOx with Widegap Carrier Injection Layers2008
Author(s)
S.Soneda, T.Minami, K.Ito, A.Kotake, S.Nakano, Y.Naka, N.Yamamoto, M.Tsuchiya, Y.Nakamura
Organizer
Proceedings of 5th International Conference on Group IV Photonics
Place of Presentation
WP26(Hilton Sorrento Palace, Sorrento, Italy)
Year and Date
2008-09-17
Related Report
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