| Budget Amount *help |
¥19,110,000 (Direct Cost: ¥14,700,000、Indirect Cost: ¥4,410,000)
Fiscal Year 2010: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2009: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2008: ¥10,920,000 (Direct Cost: ¥8,400,000、Indirect Cost: ¥2,520,000)
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| Research Abstract |
It is important to establish optical interconnection technology for high-speed integrated circuits. We have proposed and developed a new light emitting device, which is composed of an Er-doped oxide layer sandwiched by wide bandgap semiconductors. Using the devices, we have successfully observed infrared electroluminescence at wavelength of 1.5μm from low operation voltage of 10V at room temperature.
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