| Budget Amount *help |
¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000)
Fiscal Year 2010: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2009: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
Fiscal Year 2008: ¥9,880,000 (Direct Cost: ¥7,600,000、Indirect Cost: ¥2,280,000)
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| Research Abstract |
Origin of inducing the leakage current of diamond Schottky diodes (SBDs) were investigated. It was found that there are several factors of leakage current increase, which are categorized into the essential factor coming from the solid-state properties of diamond, device structural factors of diamond SBDs, and the extrinsic factors of crystalline defects of diamond. Among those, strong correlation between the leakage current level and the Schottky barrier height was observed, that is due to the formation of the localized low Schottky barrier height. This feature is essential problem of diamond because the diamond SBD utilizes surface termination properties and diamond has low dielectric constant. As for the effect of crystalline defects, we proposed the non-destructive detection method of the killer defects of diamond SBDs. Thermal stability of diamond SBDs was found to occur by the desorption of the interface oxygen.
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