Study on low energy-loss diamond power diodes
| Project/Area Number |
20360147
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
TERAJI Tokuyuki National Institute for Materials Science, センサ材料センター, 主任研究員 (50332747)
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000)
Fiscal Year 2010: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2009: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
Fiscal Year 2008: ¥9,880,000 (Direct Cost: ¥7,600,000、Indirect Cost: ¥2,280,000)
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| Keywords | ダイヤモンド / ショットキーダイオード / 高耐圧 / 表面終端 / 界面輸送特性 / オーミック電極 |
|---|
| Research Abstract |
Origin of inducing the leakage current of diamond Schottky diodes (SBDs) were investigated. It was found that there are several factors of leakage current increase, which are categorized into the essential factor coming from the solid-state properties of diamond, device structural factors of diamond SBDs, and the extrinsic factors of crystalline defects of diamond. Among those, strong correlation between the leakage current level and the Schottky barrier height was observed, that is due to the formation of the localized low Schottky barrier height. This feature is essential problem of diamond because the diamond SBD utilizes surface termination properties and diamond has low dielectric constant. As for the effect of crystalline defects, we proposed the non-destructive detection method of the killer defects of diamond SBDs. Thermal stability of diamond SBDs was found to occur by the desorption of the interface oxygen.
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Report
(4 results)
Research Products
(100 results)
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[Journal Article] Extreme dielectric strength in boron doped homoepitaxial diamond2010
Author(s)
P.N.Volpe, P.Muret, J.Pernot, F.Omnes, T.Teraji, Y.Koide, F.Jomard, D.Planson, P.Brosselard, N.Dheilly, B.Vergne, S.Scharnholz
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Journal Title
Appl.Phys.Lett. 97
Pages: 2235011-3
Related Report
Peer Reviewed
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[Journal Article] High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer2010
Author(s)
P.N.Volpe, P.Muret, J.Pernot, F.Omnes, T.Teraji, F.Jomard, D.Planson, P.Brosselard, N.Dheilly, B.Vergne, S.Scharnholz
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Journal Title
phys.status solide. 207
Pages: 2088-2092
Related Report
Peer Reviewed
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[Journal Article] High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer2010
Author(s)
P.N.Volpe, P.Muret, J.Pernot, F.Omnes, T.Teraji, F.Jomard, D.Planson, P.Brosselard, N.Dheilly, B.Vergne, S.Scharnholz
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Journal Title
phys.status solidi
Volume: 207
Pages: 2088-2092
Related Report
Peer Reviewed
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[Journal Article] Extreme dielectric strength in boron doped homoepitaxial diamond2010
Author(s)
P.N.Volpe, P.Muret, J.Pernot, F.Omnes, T.Teraji,Y.Koide, F.Jomard, D.Planson, P.Brosselard, N.Dheilly, B.Vergne, S.Scharnholz
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Journal Title
Appl.Phys.Lett.
Volume: 97
Related Report
Peer Reviewed
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[Presentation] Breakdown voltage higher than 7.5 kV in Schottky diamond diodes2010
Author(s)
P.Volpe, P.Muret, F.Omnes, J.Pernot, T.Teraji, F.Jomard, D.Planson, P.Brosselard, S.Scharnholz, B.Vergne
Organizer
HASSELT DIAMOND WORKSHOP SBDD XV
Place of Presentation
Hasselt Univ., Hasselt, Belgium
Year and Date
2010-02-24
Related Report
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[Presentation] Low-leakage p-diamond Schottky diodes with lateral configuration2010
Author(s)
P.Volpe, P.Muret, F.Omnes, J.Pernot, T.Teraji, F.Jomard, D.Planson, P.Brosselard, S.Scharnholz, B.Vergne
Organizer
HASSELT DIAMOND WORKSHOP-SBDD XV
Place of Presentation
Hasselt Univ., Hasselt, Belgium
Year and Date
2010-02-24
Related Report
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