Research on 3D-integrated Silicon Nano LSI System

• Project/Area Number: 20360152
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Chuo University (2011-2012); The University of Tokyo (2008-2010)
• Principal Investigator: TAKEUCHI Ken 中央大学, 理工学部・電気電子情報通信工学科, 教授 (80463892)
• Project Period (FY): 2008 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000); Fiscal Year 2011: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000); Fiscal Year 2010: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000); Fiscal Year 2009: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000); Fiscal Year 2008: ¥9,490,000 (Direct Cost: ¥7,300,000、Indirect Cost: ¥2,190,000)
• Keywords: メモリ / SSD / 3次元 LSI / 電源 / 低消費電力 / フラッシュメモリ / 3次元LSI / 強誘電体 / 不揮発メモリ / CMOS / ナノスケール / 不揮発性メモリ / アダプティブ

Research Abstract

Inductor based low power circuits are developed to enhance the power efficiency up to 50% and decrease the memory power consumption by half. In addition, the ferroelectric MOS transistor based logic circuit system is developed which operates at an extreme

Research Products

• [Journal Article] Scaling Trends and Tradeoffs between Short Channel Effect and Channel Boosting Characteristics in sub-20nm Bulk/SOI NAND Flash Memory (2012)
  • Author(s): Kousuke Miyaji, Chinglin Hung and Ken Takeuchi
  • Journal Title: Japanese Journal of Applied Physics (JJAP) Volume: vol. 51, no. 4
  • Peer Reviewed
• [Journal Article] Highly Reliable, High Speed and Low Power NAND Flash Memory-Based Solid State Drives (SSDs) (2012)
  • Author(s): Ken Takeuchi, Teruyoshi Hatanaka and Shuhei Tanakamaru
  • Journal Title: IEICE Electronics Express (ELEX) Volume: vol. 9, no. 8 Pages: 779-794
  • NAID: 130001922730
  • Peer Reviewed
• [Journal Article] Scaling Trends and Tradeoffs between Short Channel Effect and Channel Boosting Characteristics in sub-20nm Bulk/SOI NAND Flash Memory (2012)
  • Author(s): Kousuke Miyaji
  • Journal Title: Japanese Journal of Applied Physics (JJAP) Volume: vol. 51
  • Peer Reviewed
• [Journal Article] Highly Reliable, High Speed and Low Power NAND Flash Memory-Based Solid State Drives (SSDs) (2012)
  • Author(s): Ken Takeuchi
  • Journal Title: IEICE Electronics Express (ELEX) Volume: vol. 9 Pages: 779-794
  • NAID: 130001922730
  • Peer Reviewed
• [Journal Article] A 0.5V Operation VTH Loss Compensated DRAM Word-line Booster Circuit for Ultra-Low Power VLSI Systems (2011)
  • Author(s): Shuhei Tanakamaru, Ken Takeuchi
  • Journal Title: IEEE J.of Solid-State Circuits Volume: 46 Pages: 2406-2415
  • Peer Reviewed
• [Journal Article] A 0.5-V 6-Transistor Static Random Access Memory with Ferroelectric-Gate Field Effect Transistors (2010)
  • Author(s): Shuhei Tanakamaru, Teruyoshi Hatanaka, Ryoji Yajima, Mitsue Takahashi, Shigeki Sakai and Ken Takeuchi
  • Journal Title: Japanese Journal of Applied Physics (JJAP) Volume: 49 Pages: 121501-121509
  • Peer Reviewed
• [Journal Article] A 0.5-V 6-Transistor Static Random Access Memory with Ferroelectric-Gate Field Effect Transistors (2010)
  • Author(s): Shuhei Tanakamaru, Teruyoshi Hatanaka, Ryoji Yajima, Mitsue Takahashi, Shigeki Sakai, Ken Takeuchi
  • Journal Title: Japanese Journal of Applied Physics (JJAP) 49 Pages: 121501-121509
  • Peer Reviewed
• [Journal Article] フラッシュメモリの最新技術動向 -SSDへの応用 (2008)
  • Author(s): 竹内健
  • Journal Title: 情報処理 Volume: vol.49,no.9 Pages: 1090-1098
  • NAID: 110006884816
• [Journal Article] フラッシュメモリの最新技術動向-SSDへの応用 (2008)
  • Author(s): 竹内健
  • Journal Title: 情報処理 vol.49, no.9 Pages: 1090-1098
  • NAID: 110006884816
• [Presentation] BiCS型三次元積層NANDフラッシュメモリにおけるゲート長、ゲート間隔及び積層数の設計方針 (2013)
  • Author(s): 宮地幸祐
  • Organizer: 応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
• [Presentation] NAND & Controller Co-design for SSD (2012)
  • Author(s): Ken Takeuchi
  • Organizer: IEEE International Memory Workshop Short Course
  • Place of Presentation: ミラノ
  • Year and Date: 2012-05-23
• [Presentation] Control Gate Length, Spacing and Stacked Layer Number Design for 3D-Stackable NAND Flash Memory (2012)
  • Author(s): Yuki Yanagihara, Kousuke Miyaji and Ken Takeuchi
  • Organizer: IEEE International Memory Workshop
  • Place of Presentation: ミラノ
  • Year and Date: 2012-05-22
• [Presentation] バルクとSOI NANDフラッシュメモリセルにおける微細化による短チャネル効果と書き込み禁止時チャネル昇圧リークへの影響 (2012)
  • Author(s): 宮地幸祐, 洪慶麟, 竹内健
  • Organizer: 応用物理学会
  • Place of Presentation: 東京都新宿区早稲田大学
  • Year and Date: 2012-03-18
• [Presentation] NAND & Controller Co-design for SSD (2012)
  • Author(s): Ken Takeuchi
  • Organizer: IEEE International Memory Workshop Short Course
  • Place of Presentation: イタリア ミラノ
  • Invited
• [Presentation] Control Gate Length, Spacing and Stacked Layer Number Design for 3D-Stackable NAND Flash Memory (2012)
  • Author(s): Yuki Yanagihara
  • Organizer: IEEE International Memory Workshop
  • Place of Presentation: イタリア ミラノ
• [Presentation] 不揮発性メモリを使いこなす (2012)
  • Author(s): 竹内健
  • Organizer: 日経エレクトロニクス セミナー
  • Place of Presentation: 東京都 化学会館
  • Invited
• [Presentation] HyENEXSSを用いたバルクとSOI NANDフラッシュメモリセルにおける短チャネル効果と書き込み禁止時チャネル昇圧特性の評価 (2012)
  • Author(s): 宮地幸祐
  • Organizer: TCAD研究会
  • Place of Presentation: 慶応大学
• [Presentation] SSDとストレージ・クラス・メモリを用いたメモリシステム (2012)
  • Author(s): 竹内健
  • Organizer: 電気学会 ナノエレクトロニクス集積化・応用技術調査専門委員会
  • Place of Presentation: 早稲田大学研究開発センター
  • Invited
• [Presentation] 不揮発メモリの低電圧・低電力化技術 (2012)
  • Author(s): 竹内健
  • Organizer: 電子情報通信学会 ソサイエティ大会
  • Place of Presentation: 富山大学
  • Invited
• [Presentation] BiCS型立体構造NANDフラッシュメモリーにおけるゲート長、ゲート間隔及び積層数の設計指針 (2012)
  • Author(s): 竹内健
  • Organizer: 集積回路研究会, 信学技報,
  • Place of Presentation: 東京工業大学 蔵前会館
• [Presentation] BulkとSOI NANDフラッシュメモリセルにおける短チャネル効果とチャネル昇圧リークの微細化限界の検討 (2011)
  • Author(s): 宮地幸祐, 洪慶麟, 竹内健
  • Organizer: 集積回路研究会,信学技報
  • Place of Presentation: 宮崎県宮崎市ニューウェルシティ宮崎
  • Year and Date: 2011-11-29
• [Presentation] Highly reliable Low Power Storage Class Memory & NAND Flash Memory Hybrid Solid-State Drive (SSD) (2011)
  • Author(s): Ken Takeuchi
  • Organizer: IEEE Non-Volatile Memory Technology Symposium (NVMTS)
  • Place of Presentation: Shanghai Institute of Microsystem and Information Technology,中国(招待講演)
  • Year and Date: 2011-11-08
• [Presentation] Pushing Scaling Limit Due to Short Channel Effects and Channel Boosting Leakage from 13nm to 8nm with SOI NAND Flash Memory Cells (2011)
  • Author(s): Kousuke Miyaji, Chinglin Hung, Ken Takeuchi
  • Organizer: International Conference on Solid State Devices and Materials (SSDM)
  • Place of Presentation: Nagoya University, Japan
  • Year and Date: 2011-09-27
• [Presentation] Green High Performance Storage Class Memory & NAND Flash Memory Hybrid SSD System (2011)
  • Author(s): Ken Takeuchi
  • Organizer: IEEE International Symposium on Low Power Electronics and Design (ISLPED)
  • Place of Presentation: Fukuoka, Japan(招待講演)
  • Year and Date: 2011-08-03
• [Presentation] 3次元NANDフラッシュメモリ&SCM (2011)
  • Author(s): 竹内健
  • Organizer: Electronic Journal第771回Technical Seminar
  • Place of Presentation: 東京都文京区東京大学(招待講演)
  • Year and Date: 2011-08-02
• [Presentation] フラッシュメモリと抵抗変化型メモリの技術動向 (2011)
  • Author(s): 竹内健
  • Organizer: 新化学技術推進協会(JACI)電子情報技術部会講演会
  • Place of Presentation: 東京都千代田区(社)新化学技術推進協会(招待講演)
  • Year and Date: 2011-07-21
• [Presentation] ReRAM as High-Speed and High Capacity Storage Class Memory (2011)
  • Author(s): Ken Takeuchi
  • Organizer: IEEE Symp.on VLSI Circuits
  • Place of Presentation: Rihga Royal Hotel Kyoto, Japan(招待講演)
  • Year and Date: 2011-06-17
• [Presentation] NAND Flash and Storage Class Memory-integrated Hybrid Solid-State Drive (SSD) (2011)
  • Author(s): Ken Takeuchi
  • Organizer: Silicon Nanoelectronics Workshop (SNW)
  • Place of Presentation: Rihga Royal Hotel Kyoto, Japan(招待講演)
  • Year and Date: 2011-06-13
• [Presentation] HyENEXSSを用いたバルクとFDSOI基板における極微細浮遊ゲート型NANDフラッシュメモリのスケーリング検討 (2011)
  • Author(s): 宮地幸祐, 竹内健
  • Organizer: TCAD研究会
  • Place of Presentation: 神奈川県川崎市東芝研究開発センター
  • Year and Date: 2011-05-23
• [Presentation] Storage Class Memory and Memory System Innovation-International Collaboration for Material, Device, Circuit, Signal Processing and OS Integration (2011)
  • Author(s): Ken Takeuchi
  • Organizer: The Seventh International Nanotechnology Conferenee on Communication and Cooperation (INC7)
  • Place of Presentation: College of Nanoscale Science and Engineering, Albany, New York, USA(招待講演)
  • Year and Date: 2011-05-17
• [Presentation] Ferroelectric-gate FET for Flash Memory & SRAM application (2011)
  • Author(s): Ken Takeuchi
  • Organizer: ITRS Emerging Research Devices and Emerging Research Materials Meeting
  • Place of Presentation: ミラノ
  • Year and Date: 2011-04-25
• [Presentation] 不揮発性メモリを使いこなす～SSDからストレージ・クラス・メモリまで～ (2011)
  • Author(s): 竹内健
  • Organizer: 日経エレクトロニクスセミナー
  • Place of Presentation: 東京都港区日経エレクトロニクス本社(招待講演)
  • Year and Date: 2011-04-25
• [Presentation] 高信頼・低電力SSD～メモリコントローラによるデータ変調信号処理技術による高信頼化と低電力化～ (2011)
  • Author(s): 竹内健, 田中丸周平, 洪慶麟
  • Organizer: 集積回路研究会,信学技報
  • Place of Presentation: 兵庫県神戸市神戸大学(招待講演)
  • Year and Date: 2011-04-18
• [Presentation] Ferroelectric-gate FET for Flash Memory & SRAM application (2011)
  • Author(s): Ken Takeuchi
  • Organizer: ITRS Emerging Research Devices and Emerging Research Materials Meeting
  • Place of Presentation: ミラノ、イタリア(招待講演)
  • Year and Date: 2011-04-05
• [Presentation] 強誘電体FETを用いた低電力NANDフラッシュメモリ・SRAM技術 (2011)
  • Author(s): 竹内健
  • Organizer: ゲートスタック研究会 材料・プロセス・評価の物理(第16回研究会)
  • Place of Presentation: 東京(招待講演)
  • Year and Date: 2011-01-22
• [Presentation] Ferroelectric-gate FET for Flash Memory & SRAM application (2011)
  • Author(s): Ken Takeuchi
  • Organizer: ITRS Emerging Research Devices and Emerging Research Materials Meeting
  • Place of Presentation: ミラノ/イタリア
• [Presentation] Current Status and Future Challenge of Fe-NAND/SRAM Cell Technology (2010)
  • Author(s): Ken Takeuchi
  • Organizer: International Conference on Solid State Devices and Materials
  • Place of Presentation: 東京
  • Year and Date: 2010-09-25
• [Presentation] Current Status and Future Challenge of Fe-NAND/SRAM Cell Technology (2010)
  • Author(s): Ken Takeuchi
  • Organizer: International Conference on Solid State Devices and Materials
  • Place of Presentation: 東京(招待講演)
  • Year and Date: 2010-09-24
• [Presentation] グリーンITを目指した極低電力NANDフラッシュメモリ・SRAM (2010)
  • Author(s): 竹内健
  • Organizer: 電気化学会 第74回半導体・集積回路技術シンポジウム
  • Place of Presentation: 東京(招待講演)
  • Year and Date: 2010-07-09
• [Presentation] ナノスケールメモリLSI:材料・デバイス・回路・システムを総動員し微細化を極限まで延命する (2010)
  • Author(s): 竹内健
  • Organizer: VDECデザイナーフォーラム
  • Place of Presentation: 東京(招待講演)
  • Year and Date: 2010-05-31
• [Presentation] しきい値電圧自己調整機能による60%スタティック・ノイズ・マージン(SNM)増加,32%アクティブ電力削減,42%リーク電流削減の強誘電体FETを使用した6T-SRAM (2010)
  • Author(s): 田中丸周平, 畑中輝義, 矢島亮児, 高橋光恵, 酒井滋樹, 竹内健
  • Organizer: 電子情報通信学会 集積回路研究会
  • Place of Presentation: 藤沢
  • Year and Date: 2010-04-15
• [Presentation] A Ferroelectric NAND Flash Memory for Low-Power and Highly Reliable Enterprise SSDs and a Ferroelectric 6T-SRAM for 0.5V Low-Power CPU and SoC (2010)
  • Author(s): Kosuke Miyaji, Teruyoshi Hatanaka, Shuhei Tanakamaru, Ryoji Yajima, Shinji Noda, Mitsue Takahashi, Shigeki Sakai, Ken Takeuchi
  • Organizer: Materials Research Society (MRS) Spring Meeting
  • Place of Presentation: サンフランシスコ、米国(招待講演)
  • Year and Date: 2010-04-08
• [Presentation] 0.5V動作強誘電体6T-SRAM (2010)
  • Author(s): 田中丸周平, 畑中輝義, 矢島亮児, 高橋光恵, 酒井滋樹, 竹内健
  • Organizer: 応用物理学関係連合講演会
  • Place of Presentation: 平塚
  • Year and Date: 2010-03-17
• [Presentation] 0.5V動作,しきい値電圧自己調整機能による60%スタティック・ノイズ・マージン増加,32%アクティブ電力削減,42%リーク電流削減の強誘電体6T-SRAM (2010)
  • Author(s): 田中丸周平, 畑中輝義, 矢島亮児, 高橋光恵, 酒井滋樹, 竹内健
  • Organizer: 電子情報通信学会SDM研究会・応物シリコンテクノロジー分科会ULSIデバイス委員会共催IEDM特集講演会
  • Place of Presentation: 東京
  • Year and Date: 2010-01-22
• [Presentation] A 0.5V Operation, 32% Lower Active Power, 42% Lower Leakage Current, Ferroelectric 6T-SRAM with VTH Self-Adjusting Function for 60% Larger Static Noise Margin (2009)
  • Author(s): Shuhei Tanakamaru, Teruyoshi Hatanaka, Ryoji Yajima, Mitsue Takahashi, Shigeki Sakai, Ken Takeuchi
  • Organizer: IEEE International Electron Devices Meeting (IEDM)
  • Place of Presentation: ボルチモア、米国
  • Year and Date: 2009-12-09
• [Presentation] A 0.5V Operation, 32% Lower Active Power, 42% Lower Leakage Current, Ferroelectric 6T -SRAM with VTH Self-Adjusting Function for 60% Larger Static Noise Margin (2009)
  • Author(s): Shuhei Tanakamaru, Teruyoshi Hatanaka, Ryoji Yajima, Mitsue Takahashi, Shigeki Sakai and Ken Takeuchi
  • Organizer: IEEE International Electron Devices Meeting (IEDM)
  • Place of Presentation: ボルチモア
  • Year and Date: 2009-12-08
• [Presentation] 3次元SSD用20Vブーストコンバータ向けのインダクタ設計 (2009)
  • Author(s): 安福正, 石田光一, 高宮真, 桜井貴康, 竹内健
  • Organizer: 電子情報通信学会 集積回路研究会
  • Place of Presentation: 静岡
  • Year and Date: 2009-12-07
• [Presentation] Effect of Resistance of TSV's on Performance of Boost Converter for Low Power 3D SSD with NAND Flash Memories (2009)
  • Author(s): Tadashi Yasufuku, Koichi Ishida, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai and Ken Takeuchi
  • Organizer: IEEE International Conference on 3D System Integration (3D IC)
  • Place of Presentation: サンフランシスコ
  • Year and Date: 2009-09-28
• [Presentation] Effect of Resistance of TSV's on Performance of Boost Converter for Low Power 3D SSD with NAND Flash Memories (2009)
  • Author(s): Tadashi Yasufuku, Koichi Ishida, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi
  • Organizer: IEEE International Conference on 3D System Integration (3D IC)
  • Place of Presentation: サンフランシスコ、米国
  • Year and Date: 2009-09-20
• [Presentation] Inductor Design of 20-V Boost Converter for Low Power 3D Solid State Drive with NAND Flash Memories (2009)
  • Author(s): Tadashi Yasufuku, Koichi Ishida, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi
  • Organizer: IEEE International Symposium on Low Power Electronics and Design (ISLPED)
  • Place of Presentation: サンフランシスコ、米国
  • Year and Date: 2009-08-20
• [Presentation] Inductor Design of 20-V BoostConverter for Low Power 3D Solid State Drive with NAND Flash Memories (2009)
  • Author(s): Tadashi Yasufuku, Koichi Ishida, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai and Ken Takeuchi
  • Organizer: IEEE International Symposium on Low Power Electronics and Design (ISLPED)
  • Place of Presentation: サンフランシスコ
  • Year and Date: 2009-08-19
• [Presentation] 三次元積層NAND型フラッシュSSD向けプログラム電圧(20V)生成回路 (2009)
  • Author(s): 安福正, 石田光一, 宮本晋示, 中井弘人, 高宮真, 桜井貴康, 竹内健
  • Organizer: システムLSIワークショップ
  • Place of Presentation: 北九州
  • Year and Date: 2009-05-20
• [Presentation] 三次元SSDの低電力化技術とSSD向けプログラム電圧(20V)生成回路 (2009)
  • Author(s): 安福正, 石田光一, 高宮真, 桜井貴康, 竹内健
  • Organizer: 電子情報通信学会 集積回路研究会
  • Place of Presentation: 仙台(招待講演)
  • Year and Date: 2009-04-06
• [Presentation] 3D LSI Design for MEMS Application (2009)
  • Author(s): 竹内健
  • Organizer: Japan-Taiwan GMOS MEMS Workshop, pp.113-131
  • Place of Presentation: 台湾、新竹
  • Year and Date: 2009-03-23
• [Presentation] NAND型フラッシュSSD向け20Vブーストコンバータの制御方式(その1)(A Control Method of 20V Boost Converter for NAND Flash SSD) (2009)
  • Author(s): 石田光一, 安福正, 高官真, 桜井貴康, 竹内健
  • Organizer: 電子情報通信学会総合大会, C-12-20
  • Place of Presentation: 北九州市
  • Year and Date: 2009-03-18
• [Presentation] NAND型フラッシュSSD向け20Vブーストコンバータの制御方式(その2)(A Control Method of 20V Boost Converter for NAND Flash SSD) (2009)
  • Author(s): 安福正, 石田光一, 高官真, 桜井貴康, 竹内健
  • Organizer: 電子情報通信学会総合大会, C-12-21
  • Place of Presentation: 北九州市
  • Year and Date: 2009-03-18
• [Presentation] 不揮発性機能デバイスと新アプリケーション (2009)
  • Author(s): 竹内健
  • Organizer: 新機能素子研究開発協会新機能トランジスタ調査委員会
  • Place of Presentation: 東京
  • Year and Date: 2009-02-18
• [Presentation] Memory System Innovation with SSD and Emerging Memories (2009)
  • Author(s): Ken Takeuchi
  • Organizer: IEEE International Solid-State Circuits Conference (ISSCC)
  • Place of Presentation: サンフランシスコ
  • Year and Date: 2009-02-11
• [Presentation] A 1.8V 30nJ Adaptive Program-Voltage (20V) Generator for 3D-Integrated NAND Flash SSD (2009)
  • Author(s): Koichi Ishida, Tadashi Yasufuku, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai and Ken Takeuchi
  • Organizer: IEEE International Solid-State Circuits Conference (ISSCC)
  • Place of Presentation: サンフランシスコ
  • Year and Date: 2009-02-10
• [Presentation] A 1.8V 30nJ Adaptive Program-Voltage(20V)Generator for 3D-Integrated NAND Flash SSD (2009)
  • Author(s): Koichi Ishida, Tadashi Yasufuku, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Taknyasu Sakurai
  • Organizer: IEEE International Solid-State Circuits Conference(ISSCC), pp.238-239
  • Place of Presentation: アメリカ、サンフランシスコ
  • Year and Date: 2009-02-10
• [Presentation] Memory System Innovation with SSD and Emerging Memories (2009)
  • Author(s): 竹内健
  • Organizer: IEEE International Solid-State Circuits Conference(ISSCC)Memory Forum F-1
  • Place of Presentation: アメリカ、サンフランシスコ
  • Year and Date: 2009-02-08
• [Presentation] A 1.8V 30nJ Adaptive Program-Voltage (20V) Generator for 3D-Integrated NAND Flash SSD (2009)
  • Author(s): Koichi Ishida, Tadashi Yasufuku, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi
  • Organizer: IEEE International Solid-State Circuits Conference (ISSCC), pp.238-239
  • Place of Presentation: サンフランシスコ/USA
• [Presentation] Memory System Innovation with SSD and Emerging Memories (2009)
  • Author(s): Ken Takeuchi
  • Organizer: IEEE International Solid-State Circuits Conference (ISSCC), Memory Forum F-1
  • Place of Presentation: サンフランシスコ/USA(招待講演)
• [Presentation] Inductor Design of 20-V Boost Converter for Low Power 3D Solid State Drive with NAND Flash Memories (2009)
  • Author(s): Tadashi Yasufuku, Koichi Ishida, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi
  • Organizer: IEEE International Symposium on Low Power Electronics and Design (ISLPED)
  • Place of Presentation: サンフランシスコ/USA
• [Presentation] Effect of Resistance of TSV's on Performance of Boost Converter for Low Power 3D SSD with NAND Flash Memories (2009)
  • Author(s): Tadashi Yasufuku, Koichi Ishida, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi
  • Organizer: IEEE International Conference on 3D System Integration (3D IC)
  • Place of Presentation: サンフランシスコ/USA
• [Presentation] A 0.5V Operation, 32% Lower Active Power, 42% Lower Leakage Current, Ferroelectric 6T-SRAM with VTH Self-Adjusting Function for 60% Larger Static Noise Margin (2009)
  • Author(s): Shuhei Tanakamaru, Teruyoshi Hatanaka, Ryoji Yajima, Mitsue Takahashi, Shigeki Sakai, Ken Takeuchi
  • Organizer: IEEE International Electron Devices Meeting (IEDM)
  • Place of Presentation: ボルチモア/USA
• [Presentation] 使い手のためのSSDのすべて (2008)
  • Author(s): 竹内健
  • Organizer: 日経エレクトロニクスメモリ・システム・シンポジウム・モバイル新時代に向けたメモリ技術総覧
  • Place of Presentation: 東京
  • Year and Date: 2008-12-09
• [Presentation] VLSI回路設計手法とMEMSモデリング (2008)
  • Author(s): 竹内健
  • Organizer: 第7回ファインMEMSシステム化設計プラットフォーム検討委員会
  • Place of Presentation: 東京
  • Year and Date: 2008-12-03
• [Presentation] VLSI回路設計手法とMEMSモデリング (2008)
  • Author(s): 竹内健
  • Organizer: 電気等価回路から考えるMEMS設計手法研究会
  • Place of Presentation: 東京
  • Year and Date: 2008-12-01
• [Presentation] HDDの代替を目指すフラッシュメモリの現状と課題 (2008)
  • Author(s): 竹内健
  • Organizer: Electronic Journal 第192回 Technical Symposium フラッシュメモリ/SSD徹底検証
  • Place of Presentation: 東京
  • Year and Date: 2008-11-26
• [Presentation] SSDがもたらすメモリシステムの革新とPost NANDフラッシュメモリの技術動向 (2008)
  • Author(s): 竹内健
  • Organizer: JEITAナノエレクトロニクス技術分科会
  • Place of Presentation: 東京
  • Year and Date: 2008-11-12
• [Presentation] Solid-State Drive(SSD)and Memory System Innovation (2008)
  • Author(s): 竹内健
  • Organizer: Shanghai Jino Tong University-University of Tolcyo Joint Symposium on Electronics, Information Technology, and Electrical Engineering
  • Place of Presentation: 中国、上海
  • Year and Date: 2008-10-31
• [Presentation] Emerging 3D-Memory Device (2008)
  • Author(s): 竹内健
  • Organizer: 2008 Taiwan & Japan Semiconductor Technology Forum
  • Place of Presentation: 台湾、台北
  • Year and Date: 2008-10-18
• [Presentation] Emerging Nanoscale Non-volatile Semiconductor Memories (2008)
  • Author(s): 竹内健
  • Organizer: Bilateral Workshop on Nanoscale Systems, pp.6-9
  • Place of Presentation: ドイツ、ミュンヘン
  • Year and Date: 2008-07-10
• [Presentation] Solid-State Drive(SSD)and Memory System Innovation (2008)
  • Author(s): 竹内健
  • Organizer: University of Tokyo-INRIA-Ecole des Mines Paris-INRETS Joint Symposium, pp.111-139
  • Place of Presentation: フランス、パリ
  • Year and Date: 2008-07-07
• [Presentation] Novel Co-design of NAND Flash Memory and NAND Flash Controller Circuits for sub-30nm Low-Power High-Speed Solid-State Drives (SSD) (2008)
  • Author(s): Ken Takeuchi
  • Organizer: IEEE Symp. on VLSI Circuits
  • Place of Presentation: ホノルル
  • Year and Date: 2008-06-22
• [Presentation] Novel Co-design of NAND Flash Memory and NAND Flash Controller Circuits for sub-30nm Low-Power High-Speed Solid-State Drives(SSD) (2008)
  • Author(s): 竹内健
  • Organizer: IEEE Symp.on VLSI Circuits, pp.124-125
  • Place of Presentation: 京都
  • Year and Date: 2008-06-19
• [Presentation] SSD動向とNANDフラッシュメモリ (2008)
  • Author(s): 竹内健
  • Organizer: 電子情報通信学会集積回路研究会, 信学技報, vol.108, no.6, ICD2008-6, pp.31-36
  • Place of Presentation: 東京
  • Year and Date: 2008-04-17
• [Presentation] Novel Co-design of NAND Flash Memory and NAND Flash Controller Circuits for sub-30nm Low-Power High-Speed Solid-State Drives (SSD) (2008)
  • Author(s): Ken Takeuchi
  • Organizer: IEEE Symp.on VLSI Circuits, pp.124-125
  • Place of Presentation: 京都
• [Book] Inside Solid State Drives (SSDs) (2012)
  • Author(s): Ken Takeuchi
  • Publisher: Springer
• [Remarks]
  • URL: http://www.takeuchi-lab.org/
• [Remarks] ホームページ
  • URL: http://www.lsi.t.u-tokyo.ac.jp/index.html
• [Remarks]
  • URL: http://www.lsi.t.u-tokyo.ac.jp/research.html
• [Remarks]
  • URL: http://www.Isi.t.u-tokyo.ac.jp/research.html
• [Patent(Industrial Property Rights)] 不揮発性半導体記憶装置 (2009)
  • Inventor(s): 竹内健、他 4 名
  • Industrial Property Rights Holder: 東京大学
  • Industrial Property Number: 2010-534730
  • Filing Date: 2009-04-17
• [Patent(Industrial Property Rights)] 不揮発性半導体記憶装置 (2008)
  • Inventor(s): 竹内健, 他4名
  • Industrial Property Rights Holder: 東京大学
  • Filing Date: 2008-10-20
• [Patent(Industrial Property Rights)] 不揮発性半導体記憶装置 (2008)
  • Inventor(s): 竹内健, 他、4名
  • Industrial Property Rights Holder: 東京大学
  • Filing Date: 2008-10-20