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New ways of forming combined quantum wire/dot structures and investigation of their photoconductive functions

Research Project

Project/Area Number 20360163
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionToyota Technological Institute

Principal Investigator

SAKAKI Hiroyuki  Toyota Technological Institute, 工学部, 教授 (90013226)

Co-Investigator(Kenkyū-buntansha) OHMORI Masato  豊田工業大学, 工学部, 助教 (70454444)
VITUSHINSKIY Pavel  豊田工業大学, 工学部, PD研究員 (30545330)
AKIYAMA Yoshihiro  豊田工業大学, 工学部, PD研究員 (60469773)
Co-Investigator(Renkei-kenkyūsha) NODA Takeshi  独立行政法人物質・材料研究機構, 量子ドットセンター, 主幹研究員 (90251462)
KAWAZU Takuya  独立行政法人物質・材料研究機構, 量子ドットセンター, 主任研究員 (00444076)
Project Period (FY) 2008 – 2010
Project Status Completed (Fiscal Year 2010)
Budget Amount *help
¥16,900,000 (Direct Cost: ¥13,000,000、Indirect Cost: ¥3,900,000)
Fiscal Year 2010: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2009: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2008: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
Keywords量子デバイス / スピンデバイス / 量子ナノ構造 / 量子ドット / 量子細線 / 1次元電子 / 光伝導 / 光検出器
Research Abstract

New ways are developed to form nanostructures in which one or more quantum dots (QDs) are placed near a channel consisting of a single or plural quantum wires. When the structures are illuminated to generate carriers, electrons or holes are captured by QDs and affect the channel conductance, bringing forth the photoconductive functions. To form these structures, QDs were made by employing self assembly techniques, while wire structures are made by such methods as (1) the formation of multi-atomic steps on a vicinal GaAs substrate, (2) the stacking of multiple QDs, and (3) lithography.

Report

(4 results)
  • 2010 Annual Research Report   Final Research Report ( PDF )
  • 2009 Annual Research Report
  • 2008 Annual Research Report
  • Research Products

    (75 results)

All 2011 2010 2009 2008

All Journal Article (30 results) (of which Peer Reviewed: 30 results) Presentation (43 results) Book (2 results)

  • [Journal Article] Diffusion process of excitons in the wetting layer and their trapping by quantum dots in sparsely spaced InAs quantum dot systems2011

    • Author(s)
      M.Ohmori, P.Vitushinskiy, H.Sakaki
    • Journal Title

      Appl.Phys.Lett. Vol.98

      Pages: 133109-133109

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Anisotropic diffusion of In atoms from an In droplet and formation of elliptically shaped InAs quantum dot clusters on (100) GaAs2011

    • Author(s)
      T.Noda, T.Mano, H.Sakaki
    • Journal Title

      Crystal Growth & Design Vol.11, 3

      Pages: 726-728

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Anisotropic transport of two-dimensional electron gas modulated by embedded elongated GaSb/GaAs quantum dots2011

    • Author(s)
      Li GD, Jiang C, Zhu QS, H.Sakaki
    • Journal Title

      Appl.Phys.Lett. Vol.98, 3

      Pages: 32103-32103

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Anisotropic transport of two-dimensional electron gas modulated by embedded elongated GaSb/GaAs quantum dots2011

    • Author(s)
      Li GD.
    • Journal Title

      Appl.Phys.Lett.

      Volume: 98

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Photoluminescence spectra and carrier capture processes in sparsely-spaced InAs quantum dot systems2011

    • Author(s)
      M.Ohmori
    • Journal Title

      Phys.Status Solidi (c)

      Volume: 8 Pages: 251-253

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Anisotropic diffusion of In atoms from an In droplet and formation of elliptically shaped InAs quantum dot clusters on (100) GaAs2011

    • Author(s)
      T.Noda
    • Journal Title

      Crystal Growth & Design

      Volume: 11 Pages: 726-728

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Diffusion process of excitons in the wetting layer and their trapping by quantum dots in sparsely spaced InAs quantum dot systems2011

    • Author(s)
      M.Ohmori
    • Journal Title

      Appl.Phys.Lett.

      Volume: 98

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Temperature dependence of magneto-capacitance in n-AlGaAs/GaAs selectively doped heterojunction with InGaAs quantum dots2010

    • Author(s)
      T.Kawazu, H.Sakaki
    • Journal Title

      Jpn.J.Appl.Phys. Vol.49, 9

      Pages: 90205-90205

    • NAID

      40017294699

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas2010

    • Author(s)
      Li GD, Yin H, Zhu QS, H.Sakaki, Jiang C.
    • Journal Title

      J.Appl.Phys. Vol.108, 4

      Pages: 43702-43702

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Anisotropic transport of electrons in a novel FET channel with chains of InGaAs nano-islands embedded along quasi-periodic multi-atomic steps on vicinal (111)B GaAs2010

    • Author(s)
      Y.Akiyama, T.Kawazu, T.Noda, H.Sakaki
    • Journal Title

      AIP Conf.Proc Vol.1199

      Pages: 265-266

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas2010

    • Author(s)
      Li GD
    • Journal Title

      J.Appl.Phys.

      Volume: 108

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Temperature dependence of magnetocapacitance in n-AlGaAs/GaAs selectively doped heterojunction with InGaAs quantum dots2010

    • Author(s)
      T.Kawazu
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: 49

    • NAID

      40017294699

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Thermal annealing of GaSb quantum dots in GaAs formed by droplet epitaxy2010

    • Author(s)
      T.Kawazu
    • Journal Title

      Physica E-Low-Dimensional Systems & Nano-structures

      Volume: 42 Pages: 2742-2744

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Resonant tunneling of electrons through single self-assembled InAs quantum dot studied by conductive atomic force microscopy2010

    • Author(s)
      I.Tanaka
    • Journal Title

      Physica E-Low-Dimensional Systems & Nano-structures

      Volume: 42 Pages: 2606-2609

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effects of Sb/As intermixing on optical properties of GaSb type-II quantum dots in GaAs grown by droplet epitaxy2010

    • Author(s)
      T.Kawazu
    • Journal Title

      Appl.Phys.Lett.

      Volume: 97

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effects of antimony flux on morphology and photo-luminescence spectra of GaSb quantum dots formed on GaAs by droplet epitaxy2010

    • Author(s)
      T.Kawazu
    • Journal Title

      J.Nonlinear Optical Physics & Material

      Volume: 19 Pages: 819-826

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Anisotropic transport of electrons in a novel FET channel with chains of InGaAs nano-islands embedded along quasi-periodic multi-atomic steps on vicinal(111)B GaAs2010

    • Author(s)
      Y.Akiyama
    • Journal Title

      AIP Conf.Proc. Vol.1199

      Pages: 265-266

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Two different growth modes of GaSb dots on GaAs(100)by droplet epitaxy2009

    • Author(s)
      T.Kawazu
    • Journal Title

      J.Crystal Growth 311

      Pages: 2255-2257

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Growth of GaSb dots on GaAs (100) by droplet epitaxy2009

    • Author(s)
      Takuya Kawazu
    • Journal Title

      Physica status Solidi (b)246, No. 4

      Pages: 733-735

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Optical properties of GaSb/GaAs type-II quantum dots grown by droplet epitaxy2009

    • Author(s)
      Takuya Kawazu
    • Journal Title

      Applied Physics Letters 94

      Pages: 81911-81911

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Spontaneous formation of a cluster of InAs dots along a ring-like zone on GaAs (100)by droplet epitaxy2009

    • Author(s)
      Takeshi Noda
    • Journal Title

      J. Crystal Growth 311

      Pages: 1836-1838

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Electron scatterings in selectively doped n-AlGaAs/GaAs heterojunctions with high density self-assembled InAlAs antidots2008

    • Author(s)
      T.Kawazu, H.Sakaki
    • Journal Title

      Appl.Phys.Lett. Vol.93

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Formation of ultra-low density (≦104 cm-2) self-organized InAs quantum dots on GaAs by a modified molecular beam epitaxy method2008

    • Author(s)
      M.Ohmori, T.Kawazu, K.Torii, T.Takahashi, H.Sakaki
    • Journal Title

      Appl.Phys.Exp. Vol.1

    • NAID

      10025080675

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Magneto-capacitance study of an n-AlGaAs/GaAs heterojunction supporting a sizable dc current2008

    • Author(s)
      T.Kawazu, H.Sakaki
    • Journal Title

      Physica Status Solidi, (c) 5 No.9

      Pages: 2879-2881

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Magnetocapacitance measurement of selectively doped n-AlGaAs/GaAs heterojunction with InGaAs quantum dots2008

    • Author(s)
      T.Kawazu, H.Sakaki
    • Journal Title

      Jpn.J.Appl.Phys. Vol.47, (5), pt.1

      Pages: 3763-3765

    • NAID

      10022549917

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Anisotropic transport of electrons and holes in thin GaAs/AlAsquantum wells grown on(311)A GaAs substrates2008

    • Author(s)
      Takeshi Noda
    • Journal Title

      Physica E Vol. 40

      Pages: 2116-2118

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Magnetocapacitance measurement of selectively doped n-AlGaAs/GaAs heterojunction with InGaAs quantum dots2008

    • Author(s)
      Takuya Kawazu
    • Journal Title

      Japanese Journal of Applied Physics Part 1, Vol. 47, (5), pt. 1

      Pages: 3763-3765

    • NAID

      10022549917

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Magneto-capacitance study of an n-AlGaAs/GaAs heterojunction supporting a sizable dc current2008

    • Author(s)
      Takuya Kawazu
    • Journal Title

      Physica Status Solidi (c) 5, No. 9

      Pages: 2879-2881

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Formation of Ultra-low Density (〓 10^4 cm^<-2>) Self-Organized InAsQuantum Dots on GaAs by a Modified Molecular Beam Epitaxy Method2008

    • Author(s)
      Masato Ohmori
    • Journal Title

      Applied Physics Express Vol. 1

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Electron scatterings, in selectively doped n-AlGaAs/GaAsheterojunctions with high density self-assembled InAlAs antidots2008

    • Author(s)
      Takuya Kawazu
    • Journal Title

      Applied Physics Letters Vol. 93

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Presentation] From superlattices to quantum dots : Roles of nanostructures in advanced electronics and photonics2011

    • Author(s)
      榊裕之
    • Organizer
      第3回先進プラズマ科学と窒化物およびナノ材料への応用に関する国際シンポジウム(ISPlasma 2011)
    • Place of Presentation
      名古屋工業大学(招待講演)
    • Year and Date
      2011-03-07
    • Related Report
      2010 Annual Research Report
  • [Presentation] 量子ナノ構造デバイスの新展開~センサ素子応用を中心にして~2010

    • Author(s)
      榊裕之
    • Organizer
      公開シンポジウム「ナノ量子情報エレクトロニクスの進展」
    • Place of Presentation
      東京大学(招待講演)
    • Year and Date
      2010-12-22
    • Related Report
      2010 Annual Research Report
  • [Presentation] 半導体ナノ構造による電子の量子的制御と先端エレクトロニクス応用2010

    • Author(s)
      榊裕之
    • Organizer
      エレクトロニクス先端融合研究所開所記念国際シンポジウム
    • Place of Presentation
      豊橋技術科学大学(招待講演)
    • Year and Date
      2010-11-15
    • Related Report
      2010 Annual Research Report
  • [Presentation] Effects of interface grading on electronic states and optical transitions in GaSb type-II quantum dots in GaAs2010

    • Author(s)
      川津琢也, 榊裕之
    • Organizer
      2010 International Conference on SOLID STATE DEVICES AND MATERIALS (SSDM2010)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-09-23
    • Related Report
      2010 Final Research Report
  • [Presentation] Effects of interface grading on electronic states and optical transitions in GaSb type-II quantum dots in GaAs2010

    • Author(s)
      T.Kawazu
    • Organizer
      2010 International Conference on SOLID STATE DEVICES AND MATERIALS (SSDM 2010)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-09-23
    • Related Report
      2010 Annual Research Report
  • [Presentation] 自己形成InGaAsドット列における異方的な持続性光電流2010

    • Author(s)
      秋山芳広、川津琢也, 野田武司, 榊裕之
    • Organizer
      2010年秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
    • Related Report
      2010 Final Research Report
  • [Presentation] GaSb量子ドット入りGaAsFET素子の光照射効果:過渡応答2010

    • Author(s)
      伊賀健一郎, 山附太香史, 大森雅登, 秋山芳広, 榊裕之
    • Organizer
      2010年秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
    • Related Report
      2010 Final Research Report
  • [Presentation] 自己形成InGaAsドット列における異方的な持続性光電流2010

    • Author(s)
      秋山芳広
    • Organizer
      2010年秋季 第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] GaSb量子ドット入りGaAs FET素子の光照射効果:過渡応答2010

    • Author(s)
      伊賀健一郎
    • Organizer
      2010年秋季 第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] 多重量子井戸構造を有するpinダイオードにおける光電流の温度・構造依存性2010

    • Author(s)
      Yi Ding
    • Organizer
      2010年秋季 第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Related Report
      2010 Annual Research Report
  • [Presentation] GaSb/GaAsタイプII量子ドットにおけるSb/As相互拡散の効果2010

    • Author(s)
      川津琢也
    • Organizer
      2010年秋季 第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Related Report
      2010 Annual Research Report
  • [Presentation] 液滴エピタキシーによるInGaAs/InP上InAsリング構造の作製2010

    • Author(s)
      野田武司
    • Organizer
      2010年秋季 第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Related Report
      2010 Annual Research Report
  • [Presentation] 単一半導体量子リングにおけるサブバンド間多極放射確率2010

    • Author(s)
      近藤直樹
    • Organizer
      2010年秋季 第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] ヘテロ構造障壁を持つpIn形ダイオードのC-V及びI-V特性2010

    • Author(s)
      坂下大樹
    • Organizer
      2010年秋季 第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] Fabrication of InAs ring structure on InGaAs/InP by droplet epitaxy2010

    • Author(s)
      T.Noda
    • Organizer
      16th International Conference on Molecular Beam Epitaxy (MBE2010)
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2010-08-23
    • Related Report
      2010 Annual Research Report
  • [Presentation] Charge-sensitive tunneling diode towards single-photon detection2010

    • Author(s)
      P.Vitushinskiy, M.Ohmori, H.Sakaki
    • Organizer
      The International Conference on Nanophotonics 2010
    • Place of Presentation
      Tsukuba, Japan
    • Year and Date
      2010-06-01
    • Related Report
      2010 Annual Research Report 2010 Final Research Report
  • [Presentation] Photoluminescence spectra and carrier capture processes in sparsely-spaced InAs quantum dot systems2010

    • Author(s)
      M.Ohmori, P.Vitushinskiy, H.Sakaki
    • Organizer
      The 37th International Symposium on Compound Semiconductors
    • Place of Presentation
      Takamatsu, Japan
    • Year and Date
      2010-05-31
    • Related Report
      2010 Annual Research Report 2010 Final Research Report
  • [Presentation] Photocurrent characteristics in p-i-n diodes embedded with coupled or uncoupled multi-quantum wells2010

    • Author(s)
      T.Noda
    • Organizer
      The 37th International Symposium on Compound Semiconductors
    • Place of Presentation
      Takamatsu, Japan
    • Year and Date
      2010-05-31
    • Related Report
      2010 Annual Research Report
  • [Presentation] Growth of GaSb and InSb Quantum dots on GaAs(311)A by droplet epitaxy2010

    • Author(s)
      T.Kawazu
    • Organizer
      The 37th International Symposium on Compound Semiconductors
    • Place of Presentation
      Takamatsu, Japan
    • Year and Date
      2010-05-31
    • Related Report
      2010 Annual Research Report
  • [Presentation] Effects of antimony flux on morphology and photoluminescence spectra of GaSb quantum dots formed on GaAs by droplet epitaxy2010

    • Author(s)
      T.Kawazu
    • Organizer
      The International Conference on Nanophotonics 2010
    • Place of Presentation
      Tsukuba, Japan
    • Year and Date
      2010-05-30
    • Related Report
      2010 Annual Research Report
  • [Presentation] GaAs(111)面上のヘテロ構造内の電子伝導とピエゾ抵抗効果2010

    • Author(s)
      米倉健二
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-20
    • Related Report
      2009 Annual Research Report
  • [Presentation] 多重量子井戸構造を有するpinダイオードにおける光電流のバイアス電圧依存性2010

    • Author(s)
      野田武司
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] 半導体ナノ構造デバイスの進展と進展と結晶成長学2009

    • Author(s)
      榊裕之
    • Organizer
      第39回結晶成長学会国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-13
    • Related Report
      2009 Annual Research Report
  • [Presentation] ナノ構造のデバイス応用と表面・界面の科学2009

    • Author(s)
      榊裕之
    • Organizer
      第29回表面科学学術会議講演会
    • Place of Presentation
      タワーホール船堀(東京)
    • Year and Date
      2009-10-28
    • Related Report
      2009 Annual Research Report
  • [Presentation] 液滴エピタキシーで形成したGaAs・InAs複合構造と表面拡散2009

    • Author(s)
      野田武司
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-11
    • Related Report
      2009 Annual Research Report
  • [Presentation] 液滴エピタキシー法によるGaSb/GaAs量子ドットの熱アニーリング効果2009

    • Author(s)
      川津琢也
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] TyPe-II GaSb/GaAs量子ドットのGaAs/AlGaAs量子井戸中における光学特性2009

    • Author(s)
      大森雅登
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-09
    • Related Report
      2009 Annual Research Report
  • [Presentation] 微傾斜(111)B面上のInGaAs結合ドット列を介する異方的電子伝導の温度依存性2009

    • Author(s)
      秋山芳広, 川津琢也, 野田武司, 榊裕之
    • Organizer
      2009年秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-08
    • Related Report
      2010 Final Research Report
  • [Presentation] InAs量子ドット系における光励起キャリアの発光再結合と濡れ層での拡散過程2009

    • Author(s)
      高橋一真, 黒田知宏, 大森雅登, 榊裕之
    • Organizer
      2009年秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-08
    • Related Report
      2010 Final Research Report
  • [Presentation] 微傾斜(111)B面上のInGaAs結合ドット列を介する異方的電子伝導の温度依存性2009

    • Author(s)
      秋山芳広
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] 光励起キャリアの移動とInAs量子ドットによる捕捉過程の促進2009

    • Author(s)
      黒田知宏
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] InAs量子ドット系における光励起キャリアの発光再結合と濡れ層での拡散課程2009

    • Author(s)
      高橋一真
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] 半導体ナノ構造による電子の量子制御と先端素子応用の探索2009

    • Author(s)
      榊 裕之
    • Organizer
      第9回応用物理学会業績賞記念講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-30
    • Related Report
      2008 Annual Research Report
  • [Presentation] Thermal annealing of GaSb quantum dots in GaAs formed by droplet epitaxy2009

    • Author(s)
      T.Kawazu
    • Organizer
      The 14<th> International Conf. on Modulated Semiconductor Structures(MSS14)
    • Place of Presentation
      Kobe, Japan
    • Related Report
      2009 Annual Research Report
  • [Presentation] Anisotropic effective mass and hole transport in p-type(311)A thin GaAs quantum wells2009

    • Author(s)
      T.Noda
    • Organizer
      The 14<th> International Conf. on Modulated Semiconductor Structures(MSS14)
    • Place of Presentation
      Kobe, Japan
    • Related Report
      2009 Annual Research Report
  • [Presentation] Resonant tunneling of electrons through single self-assembled InAs quantum dot studied by conductive atomic force microscopy2009

    • Author(s)
      I.Tanaka
    • Organizer
      The 14<th> International Conf. on Modulated Semiconductor Structures(MSS14)
    • Place of Presentation
      Kobe, Japan
    • Related Report
      2009 Annual Research Report
  • [Presentation] From Quantum Wells to Quantum Dots : Roles of Nanostructures in Advanced Electronics and Photonics2009

    • Author(s)
      H.Sakaki
    • Organizer
      International Conference on Nanoscience and Technology, China 2009
    • Place of Presentation
      Beijing, China
    • Related Report
      2009 Annual Research Report
  • [Presentation] Optical properties of GaSb/GaAs type-II dots by droplet epitaxy2008

    • Author(s)
      Takuya Kawazu
    • Organizer
      2008 International Conference on SOLID STATE DEVICES AND MATERIALS (SSDM2008)
    • Place of Presentation
      Tsukuba, Japan
    • Year and Date
      2008-09-25
    • Related Report
      2008 Annual Research Report
  • [Presentation] 量子ドットをコア部に入れたフォトニック・バンドギャップ・ファイバでのレーザ発振2008

    • Author(s)
      大森雅登
    • Organizer
      2008年秋季 第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Year and Date
      2008-09-04
    • Related Report
      2008 Annual Research Report
  • [Presentation] 液滴エピタキシー法によるInAsドット群の自己形成と光学特性2008

    • Author(s)
      野田武司
    • Organizer
      2008年秋季 第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Year and Date
      2008-09-02
    • Related Report
      2008 Annual Research Report
  • [Presentation] 液滴エピタキシー法によるGaSb/GaAs タイプII量子ドットの光学特性2008

    • Author(s)
      川津琢也
    • Organizer
      2008年秋季 第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Year and Date
      2008-09-02
    • Related Report
      2008 Annual Research Report
  • [Presentation] Anisotropic transport of electrons in a novel FET channel with chains of InGaAs nano-islands embedded along quasi-periodic multi-atomic steps on vicinal (111)B GaAs2008

    • Author(s)
      秋山芳広, 川津琢也, 野田武司, 榊裕之
    • Organizer
      29th International Conference on the Physics of Semiconductors
    • Place of Presentation
      Rio de Janeiro, Brazil
    • Year and Date
      2008-07-29
    • Related Report
      2010 Final Research Report
  • [Presentation] Anisotropic transport of electrons in a novel FET channel with chains of InGaAs nano-islands embedded along quasi-periodic multi-atomic steps on vicinal (lll)B GaAs2008

    • Author(s)
      Yoshihiro Akiyama
    • Organizer
      29th International Conference on the Physics of Semiconductors
    • Place of Presentation
      Rio de Janeiro, Brazil
    • Year and Date
      2008-07-29
    • Related Report
      2008 Annual Research Report
  • [Book] 奈米技的全貌與未来発展2009

    • Author(s)
      榊裕之
    • Total Pages
      213
    • Publisher
      青文出版社股〓有限公司
    • Related Report
      2010 Final Research Report
  • [Book] 奈米科技的全貌與未来発展2009

    • Author(s)
      榊裕之
    • Total Pages
      213
    • Publisher
      青文出版社股〓有限公司
    • Related Report
      2009 Annual Research Report

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Published: 2008-04-01   Modified: 2016-04-21  

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