| Budget Amount *help |
¥19,240,000 (Direct Cost: ¥14,800,000、Indirect Cost: ¥4,440,000)
Fiscal Year 2010: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2009: ¥7,150,000 (Direct Cost: ¥5,500,000、Indirect Cost: ¥1,650,000)
Fiscal Year 2008: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000)
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| Research Abstract |
In this research, we have studied on fundamental electronic properties of Si modified with ferrocene derivatives in order to elucidate their potential as a charge storage material applicable to future memory devices. We have succeeded in preparing high quality monolayes of three types of ferrocene derivatives, that is, vinylferrocene, ethynylferrocene, ferrocenecarboxaldehyde, on Si by optimizing a molecular bonding process. This result enabled to evaluate electrochemical responses of the ferrocene monolayers themselves.
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