| Project/Area Number |
20360320
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Structural/Functional materials
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
XIE Rong-Jun National Institute for Materials Science, ナノセラミックスセンター, 主幹研究員 (00370297)
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| Co-Investigator(Kenkyū-buntansha) |
NAOTO Hirosaki 独立行政法人物質・材料研究機構, ナノセラミックスセンター, グループリーダー (80343838)
TAKASHI Takeda 独立行政法人物質・材料研究機構, ナノセラミックスセンター, 主任研究員 (60344488)
LI Yuanqiang 独立行政法人物質・材料研究機構, ナノセラミックスセンター, 研究員 (00469777)
LI Huili 独立行政法人物質・材料研究機構, ナノセラミックスセンター, 研究員 (90469776)
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥18,590,000 (Direct Cost: ¥14,300,000、Indirect Cost: ¥4,290,000)
Fiscal Year 2010: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2009: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2008: ¥10,400,000 (Direct Cost: ¥8,000,000、Indirect Cost: ¥2,400,000)
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| Keywords | 蛍光体 / 窒化物 / FED / 電子線励起 / ガス圧焼結 / 窒化物・酸窒化物 / 希土類元素ドープ / 窒化物・.酸窒化物 |
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| Research Abstract |
The role of Si playing in the luminescence and the solubility of Eu^<2+> in AlN was investigated by measuring the luminescence spectra and XRD patterns. It is understood that the doping of Si enhances the solubility of Eu2+ in AlN, and plays a key role in reducing the amount of impurity phases and in improving the cathodoluminescence of AlN:Eu,Si. It is clarified that Eu forms a single layer structure with the Si condensation between the AlN wurtzite blocks, based on the analytic results of EXAFS and HAADF-STEM techniques. In addition, the cathodoluminescence properties of nitride phosphors for white LEDs, such as La-Si-O-N:Ce^<3+>, β-sialon:Eu^<2+>, AlN-SiC:Eu^<2+>, γ-alon:Mn^<2+>, were investigated, through the bandgap engineering and surface modification. Among these, green β-sialon:Eu^<2+> and blue AlN-SiC:Eu^<2+> phosphors show interesting cathodoluminescence, enabling them to be used for field-emission devices.
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