| Project/Area Number |
20360325
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Material processing/treatments
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
SONE Masato Tokyo Institute of Technology, 精密工学研究所, 准教授 (30323752)
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| Co-Investigator(Kenkyū-buntansha) |
HIGO Yakichi 東京工業大学, 精密工学研究所, 教授 (30016802)
ISHIYAMA Chiemi 東京工業大学, 精密工学研究所, 助教 (00311663)
SHIBATA Akinobu 京都大学, 工学研究科, 助教 (60451994)
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥19,370,000 (Direct Cost: ¥14,900,000、Indirect Cost: ¥4,470,000)
Fiscal Year 2010: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2009: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2008: ¥10,010,000 (Direct Cost: ¥7,700,000、Indirect Cost: ¥2,310,000)
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| Keywords | 精密造形プロセス / 半導体配線 / 段差被覆性 / めっき / 微細プロセス技術 / ボトムアップ成長 |
|---|
| Research Abstract |
We developed a new electroplating technology, "Supercritical Nanoplating (SNP)" that combines the merits of traditional electroplating and supercritical CO_2 techniques and can provide high uniform metal films. Moreover, we applied nanoparticle technology into SNP in order to conduct integrated circuit wiring, and denoted it as modified-SNP (M-SNP). The aim of this project is to clarify these elemental phenomena and extend crystallographic study of superfine step coverage of integrated circuit wiring. In this project, we succeeded in wiring Cu into ・60nm hole with high aspect ratio, and found that the wired Cu formed single crystal without void.
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