Plasma process design for material surface treatment in the nano-scale regime utilizing dielectric-constant analysis techniques

• Project/Area Number: 20360329
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Material processing/treatments
• Research Institution: Kyoto University
• Principal Investigator: ERIGUCHI Koji Kyoto University, 大学院・工学研究科, 准教授 (70419448)
• Co-Investigator(Kenkyū-buntansha): ONO Kouichi 京都大学, 大学院・工学研究科, 教授 (30311731) ; 太田 裕朗 京都大学, 工学研究科, 助教
• Project Period (FY): 2008 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥16,510,000 (Direct Cost: ¥12,700,000、Indirect Cost: ¥3,810,000); Fiscal Year 2010: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000); Fiscal Year 2009: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000); Fiscal Year 2008: ¥8,320,000 (Direct Cost: ¥6,400,000、Indirect Cost: ¥1,920,000)
• Keywords: 表面界面改質 / 誘電率 / プラズマ / シリコン / 欠陥 / トランジスタ / 誘電関数 / レーザー / 欠陥層 / 界面層 / 分子動力学 / 電気容量

Research Abstract

We investigated the mechanism of a structural change on the plasma-exposed Si surface. We established a model clarifying quantitatively the effects of ion energy distribution function on the plasma-exposed Si surface structure (damaged-layer structure). The model predicts that the thickness of damaged-layer strongly depends on the average energy of ions from the plasma under an applied rf bias, while it is a weak function of bias frequency. Novel techniques enabling the optical and electrical analyses of the surfaces were developed and used in the present research. Experiments verified the model predictions in the case of the Si surface exposed to Ar plasma. The present model is applicable to optimizing various plasma treatments of materials and devices in the future.

Research Products

• [Journal Article] Model for Effects of Rf Bias Frequency and Waveform on Si Damaged-Layer Formation during Plasma Etching (2011)
  • Author(s): K.Eriguchi, Y.Takao, K.Ono
  • Journal Title: Jpn.J.Appl.Phys. 50(掲載予定)
  • NAID: 210000071080
  • Peer Reviewed
• [Journal Article] Trade-Off Relationship between Si Recess and Defect Density Formed by Plasma-Induced Damage in Planar Metal-Oxide-Semiconductor Field-Effect Transistors and the Optimization Methodology (2011)
  • Author(s): K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
  • Journal Title: Jpn.J.Appl.Phys. 50(掲載予定)
  • NAID: 210000071116
  • Peer Reviewed
• [Journal Article] Comparative study of plasma-charging damage in high-k dielectric and P-N junction and their effects on off-state leakage current of metal-oxide-semiconductor field-effect transistors (2011)
  • Author(s): M.Kamei, Y.Takao, K.Eriguchi, K.Ono
  • Journal Title: Jpn.J.Appl.Phys 50(掲載予定)
  • NAID: 210000071117
  • Peer Reviewed
• [Journal Article] Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy (2011)
  • Author(s): A.Matsuda , Y.Nakakubo, Y.Takao, K.Eriguchi, K.Ono
  • Journal Title: Jpn.J.Appl.Phys 50(掲載予定)
  • NAID: 210000071115
  • Peer Reviewed
• [Journal Article] Bias frequency dependence of pn junction charging damage induced by plasma processing (2010)
  • Author(s): M.Kamei, Y.Nakakubo, Y.Takao, K.Eriguchi, K.Ono
  • Journal Title: Thin Solid Films 518 Pages: 3469-3474
  • Peer Reviewed
• [Journal Article] Modeling of Ion-Bombardment Damage on Si Surfaces for In-Line Analysis (2010)
  • Author(s): A.Matsuda, Y.Nakakubo, M.Kamei, Y.Takao, K.Eriguchi, K.Ono
  • Journal Title: Thin Solid Films 518 Pages: 3481-3486
  • Peer Reviewed
• [Journal Article] Threshold Voltage Instability Induced by Plasma Process Damage in Advanced MOSFETs (2010)
  • Author(s): K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
  • Journal Title: Jpn.J.Appl.Phys. 49
  • Peer Reviewed
• [Journal Article] Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced MOSFETs (2010)
  • Author(s): K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
  • Journal Title: Jpn.J.Appl.Phys 49
  • Peer Reviewed
• [Journal Article] Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates (2010)
  • Author(s): K.Eriguchi, Y.Nakakubo, A.Matsuda, Y.Takao, K.Ono
  • Journal Title: Jpn.J.Appl.Phys 49 Pages: 56203-56203
  • NAID: 40017116117
  • Peer Reviewed
• [Journal Article] Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring (2010)
  • Author(s): Y.Nakakubo, A.Matsuda, M.Fukasawa, Y.Takao, T.Tatsumi, K.Eriguchi, K.Ono
  • Journal Title: Jpn.J.Appl.Phys 49
  • NAID: 210000069055
  • Peer Reviewed
• [Journal Article] Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal-Oxide-Semiconductor Field-Effect Transistors (2010)
  • Author(s): K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
  • Journal Title: Jpn.J.Appl.Phys. Volume: 49
  • NAID: 210000069053
  • Peer Reviewed
• [Journal Article] Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced Metal-Oxide-Semiconductor Field-Effect Transistors (2010)
  • Author(s): K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
  • Journal Title: Jpn.J.Appl.Phys. Volume: 49
  • NAID: 210000068176
  • Peer Reviewed
• [Journal Article] Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring (2010)
  • Author(s): Y.Nakakubo, A.Matsuda, M.Fukasawa, Y.Takao, T.Tatsumi, K.Eriguchi, K.Ono
  • Journal Title: Jpn.J.Appl.Phys. Volume: 49
  • NAID: 210000069055
  • Peer Reviewed
• [Journal Article] Threshold Voltage Instability Induced by Plasma Process Damage in Advanced MOSFETs (2010)
  • Author(s): K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
  • Journal Title: Jpn.J.Appl.Phys
  • Peer Reviewed
• [Journal Article] Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates (2010)
  • Author(s): K.Eriguchi, Y.Nakakubo, A.Matsuda, Y.Takao, K.Ono
  • Journal Title: Jpn.J.Appl.Phys
  • NAID: 40017116117
  • Peer Reviewed
• [Journal Article] Plasma-Induced Defect-Site Generation in Si Substrate and Its Impact on Performance Degradation in Scaled MOSFETs (2009)
  • Author(s): K.Eriguchi, Y.Nakakubo, A.Matsuda, Y.Takao, K.Ono
  • Journal Title: IEEE Electron Device Lett. 30 Pages: 1275-1277
  • Peer Reviewed
• [Journal Article] Plasma-Induced Defect-Site Generation in Si Substrate and Its Impact on Performance Degradation in Scaled (2009)
  • Author(s): K.Eriguchi, Y.Nakakubo, A.Matsuda, Y.Takao, K.Ono
  • Journal Title: IEEE Electron Device Lett. 30 Pages: 1275-1277
  • Peer Reviewed
• [Presentation] Siエッチングダメージのモデリング (2011)
  • Author(s): 江利口浩二
  • Organizer: 応用物理学会、シリコンテクノロジー分科会 招待講演
  • Place of Presentation: 東京大学
  • Year and Date: 2011-02-18
• [Presentation] 物理的プラズマダメージによるMOSFETオフリーク電流とそのバラツキの増大モデル (2011)
  • Author(s): 江利口浩二, 鷹尾祥典, 斧高一
  • Organizer: 第16回研究会 ゲートスタック研究会-材料・プロセス・評価の物理- 招待講演
  • Place of Presentation: 東京工業大学
  • Year and Date: 2011-01-21
• [Presentation] Trade-off relationship between Si recess and defect density formed by plasma-induced damage in planar MOSFETs and the optimization strategies (2010)
  • Author(s): K.Eriguchi, Y.Nakakubo, A.Matsuda, Y.Takao, K.Ono
  • Organizer: Symp.Dry Process 2010
  • Place of Presentation: 東京工業大学
  • Year and Date: 2010-11-12
• [Presentation] Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy (2010)
  • Author(s): A.Matsuda, Y.Nakakubo, Y.Takao, K.Eriguchi, K.Ono
  • Organizer: Symp.Dry Process 2010
  • Place of Presentation: 東京工業大学
  • Year and Date: 2010-11-12
• [Presentation] Study of Wet-Etch Rate of Plasma-Damaged Surface and Interface Layers and Residual Defect Sites (2010)
  • Author(s): Y.Nakakubo, A.Matsuda, Y.Takao, K.Eriguchi, K.Ono
  • Organizer: Symp.Dry Process 2010
  • Place of Presentation: 東京工業大学
  • Year and Date: 2010-11-12
• [Presentation] Trade-off relationship between Si recess and defect density formed by plasma-induced damage in planar MOSFETs and the optimization strategies (2010)
  • Author(s): K.Eriguchi, Y.Nakakubo, A.Matsuda, Y.Takao, K.Ono
  • Organizer: Symp.Dry Process
  • Place of Presentation: 東京工業大学
  • Year and Date: 2010-11-12
• [Presentation] Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy (2010)
  • Author(s): A.Matsuda, Y.Nakakubo, Y.Takao, K.Eriguchi, K.Ono
  • Organizer: Symp. Dry Process
  • Place of Presentation: 東京工業大学
  • Year and Date: 2010-11-12
• [Presentation] Study of Wet-Etch Rate of Plasma-Damaged Surface and Interface Layers and Residual Defect Sites (2010)
  • Author(s): Y.Nakakubo, A.Matsuda, Y.Takao, K.Eriguchi, K.Ono
  • Organizer: Symp.Dry Process
  • Place of Presentation: 東京工業大学
  • Year and Date: 2010-11-11
• [Presentation] Modeling of Plasma-Induced Damage and Its Impacts on Parameter Variations in Advanced Electronic Devices (2010)
  • Author(s): 江利口浩二
  • Organizer: AVS 57th International Symposium&Exhibition 招待講演
  • Place of Presentation: 米国/アルバカーキー
  • Year and Date: 2010-10-20
• [Presentation] Modeling of Plasma-Induced Damage and Its Impacts on Parameter Variations in Advanced Electronic Devices (2010)
  • Author(s): K.Eriguchi
  • Organizer: AVS 57th International Symposium & Exhibition
  • Place of Presentation: 米国/アルバカーキー(招待講演)
  • Year and Date: 2010-10-20
• [Presentation] A Model for Effects of RF Bias Frequency and Waveform on Si Damaged-Layer Formation during Plasma Etching (2010)
  • Author(s): K.Eriguchi, Y.Takao, K.Ono
  • Organizer: Proc.63rd Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas
  • Place of Presentation: フランス/パリ
  • Year and Date: 2010-10-06
• [Presentation] A Model for Effects of RF Bias Frequency and Waveform on Si Damage d-Layer Formation during Plasma Etching (2010)
  • Author(s): K.Eriguchi, Y.Takao, K.Ono
  • Organizer: Proc.63rd Gaseous Electronics Conference (GEC) and 7th International Conference on Reactive Plasmas (ICRP)
  • Place of Presentation: フランス/パリ
  • Year and Date: 2010-10-06
• [Presentation] プラズマプロセスにおけるSi基板ダメージ層形成モデルの提案 (2010)
  • Author(s): 江利口浩二, 中久保義則, 松田朝彦, 鷹尾祥典, 斧高一
  • Organizer: 2010年秋季 第71回 応用物理学会学術講演会
  • Place of Presentation: 長崎大学文教キャンパス
  • Year and Date: 2010-09-16
• [Presentation] Modeling the Effects of Plasma-Induced Physical Damage on Subthreshold Leakage Current in Scaled MOSFETs (2010)
  • Author(s): K.Eriguchi, M.Kamei, Y.Takao, K.Ono
  • Organizer: IEEE Int.Conf.on Integrated Circuit Design&Technol
  • Place of Presentation: フランス/グルノーブル
  • Year and Date: 2010-06-03
• [Presentation] Modeling the Effects of Plasma-Induced Physical Damage on Subthreshold Leakage Current in Scaled MOSFETs (2010)
  • Author(s): K.Eriguchi, M.Kamei, Y.Takao, K.Ono
  • Organizer: Int.Conf.on Integrated Circuit Design & Technology
  • Place of Presentation: フランス/グルノーブル
  • Year and Date: 2010-06-03
• [Presentation] プラズマによるSi基板ダメージとMOSデバイス特性劣化の相関モデル (2010)
  • Author(s): 江利口浩二, 中久保義則, 松田朝彦, 鷹尾祥典, 斧高一
  • Organizer: 2010年春季 第57回 応用物理学関係連合講演会
  • Place of Presentation: 東海大学湘南キャンパス
  • Year and Date: 2010-03-18
• [Presentation] Effects of Plasma Process Fluctuation on Variation in MOS Device Parameters (2010)
  • Author(s): K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
  • Organizer: The 3rd International Conference on Plasma-Nanotechnology&Science 2010
  • Place of Presentation: 名城大学
  • Year and Date: 2010-03-11
• [Presentation] Effects of Plasma Process Fluctuation on Variation in MOS Device Parameters (2010)
  • Author(s): K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
  • Organizer: The 3rd International Conference on Plasma-Nanotechnology & Science, 2010
  • Place of Presentation: 名城大学
  • Year and Date: 2010-03-11
• [Presentation] Assessment of Ion-Bombardment Damage in Plasma-Exposed Si by Interface Layer Thickness and Charge-Trapping Defects (2009)
  • Author(s): A.Matsuda, Y.Nakakubo, M.Kamei, Y.Takao, K.Eriguchi, K.Ono
  • Organizer: Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials
  • Place of Presentation: 仙台
  • Year and Date: 2009-10-08
• [Presentation] Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced MOSFETs (2009)
  • Author(s): K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
  • Organizer: Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials
  • Place of Presentation: 仙台
  • Year and Date: 2009-10-08
• [Presentation] Threshold Voltage Instability Induced by Plasma Process Damage in Advanced MOSFETs (2009)
  • Author(s): K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
  • Organizer: Symp.Dry Process, 2009
  • Place of Presentation: 韓国/釜山
  • Year and Date: 2009-09-25
• [Presentation] Threshold Voltage Instability Induced by Plasma Process Damage in Advanced MOSFETs (2009)
  • Author(s): K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
  • Organizer: Proceedings of 31st International Symposium on Dry Process, 2009, pp. 267-268
  • Place of Presentation: 韓国釜山
  • Year and Date: 2009-09-25
• [Presentation] Modeling of Ion-Bombardment Damage on Si Surfaces for In-Line Analysis (2009)
  • Author(s): A.Matsuda, Y.Nakakubo, M.Kamei, Y.Takao, K.Eriguchi, K.Ono
  • Organizer: 第22回プラズマ材料科学シンポジウム
  • Place of Presentation: 東京大学 山上会
  • Year and Date: 2009-06-15
• [Presentation] Effects of O_2 addition on Si substrate surface damage exposed to Ar plasma (2009)
  • Author(s): Y.Nakakubo, A.Matsuda, Y.Takao, K.Eriguchi, K.Ono
  • Organizer: 第22回プラズマ材料科学シンポジウム
  • Place of Presentation: 東京大学 山上会館
  • Year and Date: 2009-06-15
• [Presentation] Modeling of Ion-Bombardment Damage on Si Surfaces for In-Line Analysis (2009)
  • Author(s): A.Matsuda, Y.Nakakubo, M.Kamei, Y.Takao, K.Eriguchi, K.Ono
  • Organizer: 第22回プラズマ材料科学シンポジウム
  • Place of Presentation: 東京大学 山上会館
  • Year and Date: 2009-06-15
• [Presentation] Effects of O2 addition on Si substrate surface damage exposed to Arplasma (2009)
  • Author(s): Y.Nakakubo, A.Matsuda, Y.Takao, K.Eriguchi, K.Ono
  • Organizer: 第22回プラズマ材料科学シンポジウム
  • Place of Presentation: 東京大学 山上会館
  • Year and Date: 2009-06-15
• [Presentation] Bias frequency dependence of pn junction chargin damage induced by plasma processing (2009)
  • Author(s): M.Kamei, Y.Nakakubo, Y.Takao, K.Eriguchi, K.Ono
  • Organizer: 第22回プラズマ材料科学シンポジウム
  • Place of Presentation: 東京大学 山上会館
  • Year and Date: 2009-06-15
• [Presentation] Simulation and Experimental Study on the Characteristics of Plasma-Induced Damage and Methodology for Accurate Damage Analysis (2009)
  • Author(s): A.Matsuda, Y.Nakakubo, R.Ogino, H.Ohta, K.Eriguchi, K.Ono
  • Organizer: IEEE Int.Conf.on Integrated Circuit Design&Technol
  • Place of Presentation: 米国/オースチン
  • Year and Date: 2009-05-19
• [Presentation] Simulation and Experimental Study on the Characteristics of Plasma-Induced Damage and Methodology for Accurate Damage Analysis (2009)
  • Author(s): A.Matsuda, Y.Nakakubo, R.Ogino, H.Ohta, K.Eriguchi, K.
  • Organizer: International Conference on IC Design and Technology (ICICDT 2009)
  • Place of Presentation: 米国テキサス州
  • Year and Date: 2009-05-19
• [Presentation] Si表面のプラズマダメージの精確な解析における界面層の重要性 (2009)
  • Author(s): 松田朝彦, 荻野力, 中久保義則, 太田裕朗, 江利口浩二, 斧高一
  • Organizer: 2009年春季 第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-04-01
• [Presentation] O_2添加ArプラズマによるSi基板表面層内誘起欠陥の電気的解析 (2009)
  • Author(s): 中久保義則, 松田朝彦, 荻野力, 上田義法, 江利口浩二, 斧高一
  • Organizer: 2009年春季 第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-04-01
• [Presentation] Si表面のプラズマダメージの精確な解析における界面層の重要性 (2009)
  • Author(s): 松田朝彦, 荻野力, 中久保義則, 太田裕朗, 江利口浩二, 斧高一
  • Organizer: ・2009年春季第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-04-01
• [Presentation] 02添加ArプラズマによるSi基板表面層内誘起欠陥の電気的解析 (2009)
  • Author(s): 中久保義則, 松田朝彦, 荻野力, 上田義法, 江利口浩二, 斧高一
  • Organizer: ・2009年春季第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-04-01
• [Presentation] Identification of Carrier Trapping Defect Sites in Plasma-Exposed Si Surface by Optical and Electrical Techniques (2009)
  • Author(s): Y.Nakakubo, A.Matsuda, R.Ogino, M.Kamei, K.Eriguchi, K.Ono
  • Organizer: プラズマ科学シンポジウム2009/第26回プラズマプロセシング研究会
  • Place of Presentation: 名古屋大学 豊田講堂・シンポジオン
  • Year and Date: 2009-02-04
• [Presentation] Detailed Analysis of Plasma-Damaged Layer and Its Significance in Si Surface Structures by Spectroscopic Ellipsometry and Molecular Dynamics Simulations (2009)
  • Author(s): A. Matsuda, R. Ogino, Y. Nakakubo, H. Ohta., K. Eriguchi, K. Ono
  • Organizer: プラズマ科学シンポジウム2009/第26回プラズマプロセシング研究会
  • Place of Presentation: 名古屋大学豊田講堂・シンポシオン
  • Year and Date: 2009-02-04
• [Presentation] Identification of Carrier Trapping Defect Sites in Plasma-Exposed Si Surface by Optical and Electrical Techniques (2009)
  • Author(s): Y. Nakakubo, A. Mtsuda, R. Ogino, M. Kamei, K. Eriguchi, K. Ono
  • Organizer: プラズマ科学シンポジウム2009/第26回プラズマプロセシング研究会
  • Place of Presentation: 名古屋大学豊田講堂・シンポシオン
  • Year and Date: 2009-02-04
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