Plasma process design for material surface treatment in the nano-scale regime utilizing dielectric-constant analysis techniques
| Project/Area Number |
20360329
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Material processing/treatments
|
|---|
| Research Institution | Kyoto University |
|---|
Principal Investigator |
ERIGUCHI Koji Kyoto University, 大学院・工学研究科, 准教授 (70419448)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
ONO Kouichi 京都大学, 大学院・工学研究科, 教授 (30311731)
太田 裕朗 京都大学, 工学研究科, 助教
|
|---|
| Project Period (FY) |
2008 – 2010
|
| Project Status |
Completed (Fiscal Year 2010)
|
| Budget Amount *help |
¥16,510,000 (Direct Cost: ¥12,700,000、Indirect Cost: ¥3,810,000)
Fiscal Year 2010: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2009: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2008: ¥8,320,000 (Direct Cost: ¥6,400,000、Indirect Cost: ¥1,920,000)
|
|---|
| Keywords | 表面界面改質 / 誘電率 / プラズマ / シリコン / 欠陥 / トランジスタ / 誘電関数 / レーザー / 欠陥層 / 界面層 / 分子動力学 / 電気容量 |
|---|
| Research Abstract |
We investigated the mechanism of a structural change on the plasma-exposed Si surface. We established a model clarifying quantitatively the effects of ion energy distribution function on the plasma-exposed Si surface structure (damaged-layer structure). The model predicts that the thickness of damaged-layer strongly depends on the average energy of ions from the plasma under an applied rf bias, while it is a weak function of bias frequency. Novel techniques enabling the optical and electrical analyses of the surfaces were developed and used in the present research. Experiments verified the model predictions in the case of the Si surface exposed to Ar plasma. The present model is applicable to optimizing various plasma treatments of materials and devices in the future.
|
Report
(4 results)
Research Products
(56 results)
