Interaction between Bubble and Substrate by In-Liquid Plasma CVD Process
| Project/Area Number |
20360335
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Material processing/treatments
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| Research Institution | Ehime University |
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Principal Investigator |
TOYOTA Hiromichi Ehime University, 大学院・理工学研究科, 准教授 (00217572)
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| Co-Investigator(Kenkyū-buntansha) |
NOMURA Shinfuku 愛媛大学, 大学院・理工学研究科, 教授 (20263957)
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥16,380,000 (Direct Cost: ¥12,600,000、Indirect Cost: ¥3,780,000)
Fiscal Year 2010: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2009: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2008: ¥11,700,000 (Direct Cost: ¥9,000,000、Indirect Cost: ¥2,700,000)
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| Keywords | 薄膜プロセス / 液中プラズマ / プラズマ加工 / 表面・界面物性 / 材料加工・処理 |
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| Research Abstract |
The film formation mechanism of in-liquid plasma CVD method is clarified by analyzing the high-speed camera photographs of the bubbles surrounding in-liquid plasma The experimental condition for the uniform film formation is shown. The control method of the chemical reaction for synthesizing a compound semiconductor like diamond, silicon carbide and aluminum nitride is proved. The chemical reaction between the atom that has the highest electronegativity and the atom that has the lowest ionization energy occurs with first priority.
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Report
(4 results)
Research Products
(20 results)
