| Budget Amount *help |
¥18,330,000 (Direct Cost: ¥14,100,000、Indirect Cost: ¥4,230,000)
Fiscal Year 2012: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2011: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2010: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2009: ¥8,320,000 (Direct Cost: ¥6,400,000、Indirect Cost: ¥1,920,000)
Fiscal Year 2008: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
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| Research Abstract |
The new plasma device, AIT-PID, has been constructed, producing the high heat flux plasmas with high density of more than 1018 m-3 and the high electron energy (the high temperature ~ 30 eV; the low one ~ 5 eV). The fiber-form nanostructure, one of the important helium defect of tungsten (W), has been formed on the various grade of W’s. The surface properties like electron emission, radiation emissivity and sputtering yield have been investigating, showing serious effects of nanostructure on these characteristics. In addition the way of recovering from such defects has been demonstrated with the technique of plasma annealing, and the mitigation method using a thin carbon fil has been clarified.
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