Development of nanoswitches based on photoexcited ionics phenomena
| Project/Area Number |
20510099
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Nanostructural science
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
TSURUOKA Tohru National Institute for Materials Science, 国際ナノアーキテクトニクス研究拠点, MANA研究者 (20271992)
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2010: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2009: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2008: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | ナノスイッチ / イオン伝導 / ナノフォトイオニクス / ナノデバイス / 抵抗スイッチ / ナノイオニクス / ナノフォトニクス / 光ナノスイッチ / プローブ顕微鏡 / 光スイッチ |
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| Research Abstract |
We have developed resistive switching devices based on conduction of metal ions on a nanometer scale. It was found that the switching mechanism of devices using oxide thin films consists of the formation of a metal filament by inhomogeneous nucleation and its dissolution due to a thermochemical reaction assisted by Joule heating. The validity of the proposed operation model was demonstrated by the fact that the temperature variation of switching behavior can be explained in terms of classical nucleation theory. Similar switching devices were achieved using conduction of metal ions in polymer electrolyte films. Moreover, switching phenomena due to light irradiation were also observed for a device using chalcogenide glass films.
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Report
(4 results)
Research Products
(25 results)
