Creation and annihilation of conductive nanowires in insulators
| Project/Area Number |
20510108
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Nanomaterials/Nanobioscience
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| Research Institution | Shibaura Institute of Technology |
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Principal Investigator |
KYUNO Kentaro Shibaura Institute of Technology, 工学部, 教授 (40251467)
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2010: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2009: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2008: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | メモリ / 酸化物 / ナノ細線 / ReRAM / スイッチング / RRAM |
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| Research Abstract |
The forming process in planar-type Cu_2O resistive switching devices is investigated. It is found that two forming processes occur in series, and the existence of a Cu filament is directly confirmed using transmission electron microscopy after each forming process. The time evolution of the surface is observed by an optical microscope during these processes. The first process accompanies the oxidation of the Cu_2O surface, and the filament is created～15 m below the surface ; the second process involves melting of the region between the electrodes with the creation of a new filament～1μm below the surface.
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Report
(4 results)
Research Products
(15 results)
