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New Schottky-barrier theory responding to interface structures

Research Project

Project/Area Number 20540310
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Condensed matter physics I
Research InstitutionChiba University

Principal Investigator

NAKAYAMA Takashi  Chiba University, 大学院・理学研究科, 教授 (70189075)

Project Period (FY) 2008 – 2010
Project Status Completed (Fiscal Year 2010)
Budget Amount *help
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2010: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2009: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2008: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Keywordsショットキーバリア / 界面 / 第一原理計算 / 電荷中性準位 / シリサイド / 偏析 / ドーピング / 界面欠陷 / 強結合モデル / 原子空孔 / 格子間原子 / 界面構造 / 界面偏析 / InN界面 / オリゴアセン / 拡散 / 析出 / 界面ボンド混成 / 界面ボンド分極 / 混晶化
Research Abstract

Recent experi ments found unusual behaviors of Schottky barrier, i.e., the energy-level difference between metal and nonmetal materials, which cannot be explained by previous theories. By using quantum mechanical calculations, this project has shown that such behaviors originate from the selective atomic bonding, the formation of compounds, and the segregation of impurities at interfaces, and has constructed a new generalized theory of Schottky barrier.

Report

(4 results)
  • 2010 Annual Research Report   Final Research Report ( PDF )
  • 2009 Annual Research Report
  • 2008 Annual Research Report
  • Research Products

    (91 results)

All 2011 2010 2009 2008 Other

All Journal Article (27 results) (of which Peer Reviewed: 26 results) Presentation (57 results) Book (3 results) Remarks (4 results)

  • [Journal Article] N-doping induced band-gap reduction in III-V semiconductors : First-principles calculations2011

    • Author(s)
      M.Ishikawa
    • Journal Title

      Phys.Status Solidi C

      Volume: 8 Pages: 352-355

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Metal-Atom Diffusion in Organic Solids : First-Principles Study of Graphene and Polyacetylene Syatems2010

    • Author(s)
      Y.Tomita, T.Nakayama
    • Journal Title

      Appl.Phys.Express 3

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Van der Waals Interactions for Isolated Systems Calculated Using Density Functional Theory within Plasmon-Pole Approx-imation2010

    • Author(s)
      Y.Ono, K.Kusakabe, T.Nakayama
    • Journal Title

      J.Phys.Soc.Jpn. 79

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Chemical Trend of Schottky-Barrier Change by Segregation Layers at Metal/Si Interfaces : First-Principles Study2010

    • Author(s)
      T.Nakayama, Y.Maruta, K.Kobinara
    • Journal Title

      ECS Trans Vol.33, No.10

      Pages: 1-7

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Firstprinciples study on Nitrogen-induced band-gap reduction in III-V semi conductors2010

    • Author(s)
      M.Ishikawa, T.Nakayama
    • Journal Title

      Physics Procedia 3

      Pages: 1363-1366

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Metal-Atom Diffusion in Organic Solids: First-Principles Study of Graphene and Polyacetylene Systems2010

    • Author(s)
      Y.Tomita
    • Journal Title

      Appl.Phys.Express

      Volume: 3

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Van der Waals Interactions for Isolated Systems Calculated Using Density Functional Theory within Plasmon-Pole Approximation2010

    • Author(s)
      Y.Ono
    • Journal Title

      J.Phys.Soc.Jpn.

      Volume: 79

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Chemical Trend of Schottky-Barrier Change by Segregation Layers at Metal/Si Interfaces : First-Principles Study2010

    • Author(s)
      T.Nakayama
    • Journal Title

      ECS Trans.

      Volume: 33 Pages: 913-919

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] First-principles study on Nitrogen-induced band-gap reduction in III-V semiconductors2010

    • Author(s)
      M.Ishikawa
    • Journal Title

      Physics Procedia 3

      Pages: 1363-1366

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article]2010

    • Author(s)
      K.Shiraishi
    • Journal Title

      "Role of computational science in Si nanotechnologies and devices" in "The Oxford Handbook of nanoscience and Technology"(Oxford University Press)

      Pages: 1-46

    • Related Report
      2009 Annual Research Report
  • [Journal Article] Stability and Schottky barrier of silicides: First-principles study2009

    • Author(s)
      T.Nakayama, S.Sotome, S.Shinji
    • Journal Title

      Micro electronics Eng. 86

      Pages: 1718-1721

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Transient current behavior through molecular bridge systems ; effects of intra-molecule current on quantum relaxation and oscillation2009

    • Author(s)
      Y.Tomita, T.Nakayama, H.Ishii
    • Journal Title

      eJ.Surf.Sci.Nanotech. 7

      Pages: 606-616

    • NAID

      130004439158

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] First-principles Study of Schottky-Barrier Behavior at Metal/InN Interfaces2009

    • Author(s)
      Y.Takei, T.Nakayama
    • Journal Title

      Jpn.J.Appl.Phys. 48

    • NAID

      40016704628

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Electron carrier generation at edge dislocations in InN films; First-principles study2009

    • Author(s)
      Y.Takei, T.Nakayama
    • Journal Title

      J.Cryst.Growth 311

      Pages: 2767-2771

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Firstprinciples study on band-gap reduction in GaN/GaSb superlattices2009

    • Author(s)
      M.Ishikawa, T.Nakayama
    • Journal Title

      Micro electronics J 40

      Pages: 824-826

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] First-principles Study of Schottky-Barrier Behavior at Metal/InN Interfaces2009

    • Author(s)
      Y.Takei
    • Journal Title

      Jpn.J.Appl.Phys. 48

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Transient current behavior through molecular bridge systems ; effects of intra-molecule current on quantum relaxation and oscillation2009

    • Author(s)
      Y.Tomita
    • Journal Title

      e-J.Surf.Sci.Nanotech. 7

      Pages: 606-616

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Stability and Schottky barrier of silicides : First-principles study2009

    • Author(s)
      T.Nakayama
    • Journal Title

      Microelectronic Engineering 86

      Pages: 1718-1721

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] First-Principles band-gap reduction in GaN/GaSb superlattices2009

    • Author(s)
      M. Ishikawa
    • Journal Title

      Microelectronics J. 40

      Pages: 824-826

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Relaxation Process of Transient Current through Nanoscale Systems ; Density Matrix Calculations2008

    • Author(s)
      H.Ishii, Y.Tomita, Y.Shigeno, T.Nakayama
    • Journal Title

      eJ.Surf.Sci.Nanotech. 6

      Pages: 213-221

    • NAID

      130004933990

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Energy-level alignment, ionization, and stability of bio-amino acids at amino-acid/Si junctions2008

    • Author(s)
      M.Oda, T.Nakayama
    • Journal Title

      Jpn.J.Appl.Phys. 47

      Pages: 3712-3718

    • NAID

      40016057275

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Atomic and electronic structures of stair-rod dislocations in Si and GaAs2008

    • Author(s)
      R.Kobayashi, T.Nakayama
    • Journal Title

      Jpn.J.Appl.Phys. 47

      Pages: 4417-4421

    • NAID

      40016110952

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Why and How Atom Intermixing Proceeds at Metal/Si Interfaces ; Silicide Formation vs. Random Mixing2008

    • Author(s)
      T.Nakayama, S.Shinji, S.Sotome
    • Journal Title

      ECS Trans Vol.16, No.10(招待講演論文)

      Pages: 787-795

    • Related Report
      2010 Final Research Report
    • Peer Reviewed
  • [Journal Article] Energy-level alignment,ionization, and stability of bio-amino acids at amino-acid/Si junctions2008

    • Author(s)
      M. Oda
    • Journal Title

      Jpn. J. Appl. Phys 47

      Pages: 3712-3718

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Atomic and electronic structures of stair-rod dislocations in Si and GaAs2008

    • Author(s)
      R. Kobayashi
    • Journal Title

      Jpn. J. Appl. Phys 47

      Pages: 4417-4421

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Relaxation Process of Transient Current Through Nanoscale Systems; Density Matrix Calculations2008

    • Author(s)
      H. Ishii
    • Journal Title

      e-J. Surf. Sci. Nanotech 6

      Pages: 213-221

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Why and How Atom Intermixing Proceeds at Metal/Si Interfaces; Silicide Formation vs. Random Mixing2008

    • Author(s)
      T. Nakayama
    • Journal Title

      ECS Transaction 16

      Pages: 787-795

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Presentation] Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-Devices based on Fundamental Physics of Why Silicides Exist in Nature2010

    • Author(s)
      中山隆史, 他
    • Organizer
      2010 IEEE International Electron Devices Meeting
    • Place of Presentation
      San Francisco, USA
    • Year and Date
      2010-12-07
    • Related Report
      2010 Annual Research Report 2010 Final Research Report
  • [Presentation] Physics of Metal Silicides : Stability, Stoichiometry, and Schottky Barrier Control2010

    • Author(s)
      中山隆史
    • Organizer
      Int.Conf.on Solid-State and Integrated Circuit Technology
    • Place of Presentation
      Shanghai China(招待講演)
    • Year and Date
      2010-11-03
    • Related Report
      2010 Final Research Report
  • [Presentation] Physics of Metal Silicides : Stability, Stoichiometry, and Schottky Barrier Control (invited)2010

    • Author(s)
      T.Nakayama
    • Organizer
      International Conference on Solid-State and integrated Circuit Technology
    • Place of Presentation
      Shanghai, China
    • Year and Date
      2010-11-03
    • Related Report
      2010 Annual Research Report
  • [Presentation] ナノ界面科学の課題2010

    • Author(s)
      中山隆史
    • Organizer
      応用物理学会講演会
    • Place of Presentation
      長崎大(シンポジウム招待講演)
    • Year and Date
      2010-09-16
    • Related Report
      2010 Final Research Report
  • [Presentation] ナノ界面科学の課題2010

    • Author(s)
      中山隆史
    • Organizer
      応用物理学会 シンポジウム講演
    • Place of Presentation
      長崎大学(招待講演)
    • Year and Date
      2010-09-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] 金属/絶縁体界面の物理 -電子準位はどのように整列するのか-2010

    • Author(s)
      中山隆史
    • Organizer
      触媒学会主催 第3回新電極触媒シンポジウム講演
    • Place of Presentation
      静岡(招待講演)
    • Year and Date
      2010-09-09
    • Related Report
      2010 Annual Research Report
  • [Presentation] Doping properties of metal silicides : firstprinciples study on solubility and Schottky barrier2010

    • Author(s)
      T.Nakayama, S.Sotome
    • Organizer
      30th Int.Conf.Physics of Semiconductors
    • Place of Presentation
      Seoul, Korea
    • Year and Date
      2010-07-29
    • Related Report
      2010 Final Research Report
  • [Presentation] Metal-atom diffusion in organic semiconductors : graphene and oligoacene systems2010

    • Author(s)
      Y.Tomita, T.Nakayama
    • Organizer
      30th Int.Conf.Physics of Semiconductors
    • Place of Presentation
      Seoul, Korea
    • Year and Date
      2010-07-29
    • Related Report
      2010 Final Research Report
  • [Presentation] Doping properties of metal silicides : first-principles study on solubility and Schottky barrier2010

    • Author(s)
      T.Nakayama
    • Organizer
      30th International Conference on the Physics of Semiconductors
    • Place of Presentation
      Seoul, Korea
    • Year and Date
      2010-07-29
    • Related Report
      2010 Annual Research Report
  • [Presentation] Metal-atom diffusion in organic semiconductors : graphene andoligoacene systems2010

    • Author(s)
      Y.Tomita
    • Organizer
      30th International Conference on the Physics of Semiconductors
    • Place of Presentation
      Seoul, Korea
    • Year and Date
      2010-07-29
    • Related Report
      2010 Annual Research Report
  • [Presentation] Nitrogen-induced optical absorption spectra of InP and Gap : direct vs.indirect band-gap systems2010

    • Author(s)
      M.Ishikawa
    • Organizer
      30th International Conference on the Physics of Semiconductors
    • Place of Presentation
      Seoul, Korea
    • Year and Date
      2010-07-27
    • Related Report
      2010 Annual Research Report
  • [Presentation] Electronic structures of metal clusters on graphene sheets : first-principles calculations2010

    • Author(s)
      T.Park
    • Organizer
      30th International Conference on the Physics of Semiconductors
    • Place of Presentation
      Seoul, Korea
    • Year and Date
      2010-07-27
    • Related Report
      2010 Annual Research Report
  • [Presentation] Photo-absorption spectra of nitrogen-doped InP and GaP : Comparison of direct and indirect band-gap systems2010

    • Author(s)
      M.Ishikawa, T.Nakayama
    • Organizer
      Int.Conf.Superlattices, Nano-structures and Nanodevices 2010
    • Place of Presentation
      Beijing, China
    • Year and Date
      2010-07-22
    • Related Report
      2010 Final Research Report
  • [Presentation] Photo-absorption spectra of nitrogen-doped InP and Gap : Comparisonof direct and indirect band-gap systems2010

    • Author(s)
      M.Ishikawa
    • Organizer
      International Conference on Superlattices, Nano- structures and Nanodevices 2010
    • Place of Presentation
      Beijing, China
    • Year and Date
      2010-07-22
    • Related Report
      2010 Annual Research Report
  • [Presentation] Segregation-induced Schottky-barrier change at metal/Si interfaces : First-principles study on chemical trend2010

    • Author(s)
      中山隆史
    • Organizer
      Int.Conf.Superlattices, Nano-structures and Nanodevices 2010
    • Place of Presentation
      Beijing, China
    • Year and Date
      2010-07-20
    • Related Report
      2010 Final Research Report
  • [Presentation] Segregation-induced Schottky-barrier change at metal/Si interfaces : First-principles study on chemical trend2010

    • Author(s)
      T.Nakayama
    • Organizer
      International Conference on Superlattices, Nano- structures and Nanodevices 2010
    • Place of Presentation
      Beijing, China
    • Year and Date
      2010-07-20
    • Related Report
      2010 Annual Research Report
  • [Presentation] Stability, Doping, and Schottky Barrier of Polymorphic Silicides: First-principles Study2010

    • Author(s)
      中山隆史
    • Organizer
      Int.Symp.Technology Evolution for Silicon Nano-Electronics
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-06-05
    • Related Report
      2010 Final Research Report
  • [Presentation] Stability, Doping, and Schottky Barrier of Polymorphic Silicides : First-principles Study2010

    • Author(s)
      T.Nakayama
    • Organizer
      International Symposium on Technology Evolutionfor Silicon Nano-Electronics
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-06-05
    • Related Report
      2010 Annual Research Report
  • [Presentation] First-principles study of metal-cluster adsorption on graphene/graphite sheets2010

    • Author(s)
      T.Park, T.Nakayama
    • Organizer
      5th Int.Workshop on Electronic Structure and Processes at Molecular-Based Interfaces
    • Place of Presentation
      Chiba, Japan
    • Year and Date
      2010-01-26
    • Related Report
      2010 Final Research Report 2009 Annual Research Report
  • [Presentation] Metal atom diffusion in organic solids ; first-principles study2010

    • Author(s)
      Y.Tomita
    • Organizer
      5th Int.Workshop on Electronic Structure and Processes at Molecular-Based Interfaces
    • Place of Presentation
      Chiba, Japan
    • Year and Date
      2010-01-26
    • Related Report
      2009 Annual Research Report
  • [Presentation] 金属/絶縁体界面の物理-電子準位はどのように整列するのか-2010

    • Author(s)
      中山隆史
    • Organizer
      触媒学会燃料電池関連触媒研究会
    • Place of Presentation
      伊東(招待講演)
    • Related Report
      2010 Final Research Report
  • [Presentation] Universal Behavior of Metal-atom Diffusions in Organic Pentacene and Graphene Systems ; First-principles Study2009

    • Author(s)
      Y.Tomita, T.Nakayama
    • Organizer
      MRS Fall Meeting
    • Place of Presentation
      Boston, USA
    • Year and Date
      2009-12-02
    • Related Report
      2010 Final Research Report
  • [Presentation] Universal Behavior of Metal-atom Diffusions in Organic Pentacene and Graphene Systems ; First-principles Study2009

    • Author(s)
      Y.Tomita
    • Organizer
      2009 MRS Fall Meeting
    • Place of Presentation
      Boston, USA
    • Year and Date
      2009-12-02
    • Related Report
      2009 Annual Research Report
  • [Presentation] Physics of Polymorphic Silicide Interfaces ; Firstprinciples Study of Stability, Doping, and Schottky Barrier2009

    • Author(s)
      T.Nakayama, S.Sotome
    • Organizer
      2009 MRS Fall Meeting
    • Place of Presentation
      Boston, USA
    • Year and Date
      2009-12-01
    • Related Report
      2010 Final Research Report
  • [Presentation] Physics of Polymorphic Silicide Interfaces ; First-principles Study of Stability, Doping, and Schottky Barrier2009

    • Author(s)
      T.Nakayama
    • Organizer
      2009 MRS Fall Meeting
    • Place of Presentation
      Boston, USA
    • Year and Date
      2009-12-01
    • Related Report
      2009 Annual Research Report
  • [Presentation] Metal atom diffusion in organic solids ; first-principles study2009

    • Author(s)
      Y.Tomita, T.Nakayama
    • Organizer
      G-COE Workshop on Organic Elctronics : Electronic States, Charge Transport and Devices
    • Place of Presentation
      Chiba, Japan(招待講演)
    • Year and Date
      2009-11-05
    • Related Report
      2010 Final Research Report
  • [Presentation] Metal atom diffusion in organic solids ; first-principles study(invited)2009

    • Author(s)
      Y.Tomita
    • Organizer
      G-COE Workshop on Organic Elctronics : Electronic States, Charge Transport and Devices
    • Place of Presentation
      Chiba, Japan
    • Year and Date
      2009-11-05
    • Related Report
      2009 Annual Research Report
  • [Presentation] Physics of Schottky barrier at metal/high-k-oxide interfaces(invited)2009

    • Author(s)
      T.Nakayama
    • Organizer
      2nd Int.Workshop on Epitaxial Growth and Fundam ental Properties of Semiconductor Nanostructures
    • Place of Presentation
      Anan, Japan
    • Year and Date
      2009-08-09
    • Related Report
      2009 Annual Research Report
  • [Presentation] Transient current behavior at nano-contact nano-scale systems2009

    • Author(s)
      中山隆史
    • Organizer
      Photonics Integration-Core Electronics Workshop
    • Place of Presentation
      Cambridge, UK(招待講演)
    • Year and Date
      2009-07-03
    • Related Report
      2010 Final Research Report
  • [Presentation] Transient current behavior at nano-contact nano-scale systems(invited)2009

    • Author(s)
      T.Nakayama
    • Organizer
      Photonics Integration-Core Electronics Workshop
    • Place of Presentation
      Cambridge, England
    • Year and Date
      2009-07-03
    • Related Report
      2009 Annual Research Report
  • [Presentation] Stability and Schottky barrier of silicides : First-principles study2009

    • Author(s)
      T.Nakayama, S.Sotome, S.Shinji
    • Organizer
      16th Biannual Conf. Insulating Films on Semi conductors
    • Place of Presentation
      Cambridge, England
    • Year and Date
      2009-06-30
    • Related Report
      2010 Final Research Report
  • [Presentation] Stability and Schottky barrier of silicides : First-principles study2009

    • Author(s)
      T.Nakayama
    • Organizer
      16th Biannual Conference of Insulating Films on Semi conductors
    • Place of Presentation
      Cambridge, England
    • Year and Date
      2009-06-30
    • Related Report
      2009 Annual Research Report
  • [Presentation] Adsorption and Diffusion of Metal Atoms in/on Graphene Sheets ; First-principles Study2009

    • Author(s)
      Y.Tomita, T.Nakayama
    • Organizer
      15th Int.Symp.Intercalation Compounds
    • Place of Presentation
      Beijing, China
    • Year and Date
      2009-05-13
    • Related Report
      2010 Final Research Report
  • [Presentation] Adsorption and Diffusion of Metal Atoms in/on Graphene Sheets ; First-principles Study2009

    • Author(s)
      Y.Tomita
    • Organizer
      15th Int.Symposium on Intercalation Compounds
    • Place of Presentation
      Beijing, China
    • Year and Date
      2009-05-13
    • Related Report
      2009 Annual Research Report
  • [Presentation] Ionization and Hole-transport in Bio-amino-acid Protein using Amino-acid/Semiconductor Junctions2009

    • Author(s)
      T.Nakayama, M.Oda
    • Organizer
      15th Int.Symp.Intercalation Compounds, Compounds
    • Place of Presentation
      Beijing, China
    • Year and Date
      2009-05-12
    • Related Report
      2010 Final Research Report
  • [Presentation] Ionization and Hole-transport in Bio-amino-acid Protein using Amino-acid/Semiconductor Junctions2009

    • Author(s)
      T.Nakayama
    • Organizer
      15th Int.Symposium on Intercalation Compounds
    • Place of Presentation
      Beijing, China
    • Year and Date
      2009-05-12
    • Related Report
      2009 Annual Research Report
  • [Presentation] 未来デバイス界面の物理-ショットキーバリアと量子散逸を例に2009

    • Author(s)
      中山隆史
    • Organizer
      応用物理学会講演会
    • Place of Presentation
      筑波大(シンポジウム招待講演)
    • Year and Date
      2009-04-01
    • Related Report
      2010 Final Research Report
  • [Presentation] 可視光で見る埋もれた界面の電子:反射率差分光(RDS)の物理2009

    • Author(s)
      中山隆史
    • Organizer
      応用物理学会講演会
    • Place of Presentation
      .筑波大(シンポジウム招待講演)
    • Year and Date
      2009-03-31
    • Related Report
      2010 Final Research Report
  • [Presentation] Metal-atom diffusion in organic solids : graphene and acetylene prototypes2009

    • Author(s)
      Y.Tomita, T.Nakayama
    • Organizer
      5th Int.Conf.Molecular electronics and Bioelectronics
    • Place of Presentation
      Miyazaki, Japan
    • Year and Date
      2009-03-17
    • Related Report
      2010 Final Research Report
  • [Presentation] Energy-level alignment,ionization,and hole transfer of bio-amino acids at protein/semiconductor junctions2009

    • Author(s)
      T. Nakayama
    • Organizer
      5th Int. Conf. Molecular electronics and Bioelectronics
    • Place of Presentation
      Miyazaki, Japan
    • Year and Date
      2009-03-17
    • Related Report
      2008 Annual Research Report
  • [Presentation] Metal-atom diffusion in organic solids: graphene and acetylene prototypes2009

    • Author(s)
      Y. Tomita
    • Organizer
      5th Int. Conf. Molecular electronics and Bioelectronics
    • Place of Presentation
      Miyazaki, Japan
    • Year and Date
      2009-03-17
    • Related Report
      2008 Annual Research Report
  • [Presentation] Transient current behavior in nano-linked molecularbridge systems ; what causes appliedpulse deformation?2009

    • Author(s)
      中山隆史
    • Organizer
      5th Int. Conf.Molecular Elect.Bioelectronics
    • Place of Presentation
      Miyazaki, Japan(招待講演)
    • Year and Date
      2009-03-16
    • Related Report
      2010 Final Research Report
  • [Presentation] Transient current behavior in nano-linked molecular-bridge systems; what causes applied-pulse deformation?2009

    • Author(s)
      T. Nakayama
    • Organizer
      5th Int. Conf. Molecular electronics and Bioelectronics
    • Place of Presentation
      Miyazaki, Japan
    • Year and Date
      2009-03-16
    • Related Report
      2008 Annual Research Report
  • [Presentation] Physics of Schottky barrier at metal/high-k-oxide interfaces2009

    • Author(s)
      中山隆史
    • Organizer
      2nd Int.Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Place of Presentation
      Anan, Japan(招待講演)
    • Related Report
      2010 Final Research Report
  • [Presentation] Current-induced quantum friction in nano-linked molecule vibration2008

    • Author(s)
      中山隆史
    • Organizer
      13th Advanced Heterostructure and Nanostructures Workshop
    • Place of Presentation
      Kona, USA
    • Year and Date
      2008-12-09
    • Related Report
      2010 Final Research Report 2008 Annual Research Report
  • [Presentation] Electronic breathing of transient current through molecule-bridge systems2008

    • Author(s)
      Y.Tomita, T.Nakayama
    • Organizer
      13th Advanced Heterostructure and Nanostructures Workshop
    • Place of Presentation
      Kona, USA
    • Year and Date
      2008-12-09
    • Related Report
      2010 Final Research Report 2008 Annual Research Report
  • [Presentation] Theory of current-induced friction of nano-linked molecule vibration2008

    • Author(s)
      T.Nakayama, Y.Shigeno
    • Organizer
      15th Int.Conf.Superlattices, Nanostructures, Nano devices
    • Place of Presentation
      Natal, Brazil
    • Year and Date
      2008-08-07
    • Related Report
      2010 Final Research Report
  • [Presentation] Theory of current-induced friction of nano-linked molecule vibration2008

    • Author(s)
      T. Nakayama
    • Organizer
      15th Int. Conf.Superlattices,Nanostructures,Nanodevices
    • Place of Presentation
      Natal, Brazil
    • Year and Date
      2008-08-07
    • Related Report
      2008 Annual Research Report
  • [Presentation] Firstprinciples study of defect-induced carrier generation in InN films ; dislocation vs. vacancies and electrode interfaces2008

    • Author(s)
      T.Nakayama, Y.Takei
    • Organizer
      15th Int.Conf.Superlattices, Nanostructures, Nano devices
    • Place of Presentation
      Natal, Brazil
    • Year and Date
      2008-08-05
    • Related Report
      2010 Final Research Report
  • [Presentation] First-principles study of defect-induced carrier generation in InN films; dislocation vs. vacancies and electrode interfaces2008

    • Author(s)
      T. Nakayama
    • Organizer
      15th Int. Conf.Superlattices,Nanostructures,and Nanodevices
    • Place of Presentation
      Natal, Brazil
    • Year and Date
      2008-08-05
    • Related Report
      2008 Annual Research Report
  • [Presentation] Electron carrier generation by edge dislocations in InN films ; first-principles study2008

    • Author(s)
      T.Nakayama, Y.Takei
    • Organizer
      29th Int.Conf.Physics Semiconductors
    • Place of Presentation
      Rio de Janeiro, Brazil
    • Year and Date
      2008-08-01
    • Related Report
      2010 Final Research Report
  • [Presentation] Electron carrier generation by edge dislocations in InN films; first_ principles study2008

    • Author(s)
      T. Nakayama
    • Organizer
      29th Inc. Conf. Physics Semiconductors
    • Place of Presentation
      Rio de Janeiro, Brazil
    • Year and Date
      2008-08-01
    • Related Report
      2008 Annual Research Report
  • [Presentation] Currentinduced quantum friction of nanolinked molecule vibration2008

    • Author(s)
      T.Nakayama, Y.Shigeno
    • Organizer
      29th Int.Conf.Physics Semiconductors
    • Place of Presentation
      Rio de Janeiro, Brazil
    • Year and Date
      2008-07-29
    • Related Report
      2010 Final Research Report
  • [Presentation] Stability and Schottky barrier of polymorphic NixSiy silicides on Si substrate ; first-principles study2008

    • Author(s)
      T.Nakayama, S.Shinji
    • Organizer
      29th Int.Conf.Physics Semiconductors
    • Place of Presentation
      Rio de Janeiro, Brazil
    • Year and Date
      2008-07-29
    • Related Report
      2010 Final Research Report
  • [Presentation] Current-induced quantum friction of nano-linked molecule vibration2008

    • Author(s)
      T. Nakayama
    • Organizer
      29th Inc. Conf. Physics Semiconductors
    • Place of Presentation
      Rio de Janeiro, Brazil
    • Year and Date
      2008-07-29
    • Related Report
      2008 Annual Research Report
  • [Presentation] Stability and Schottky barrier of polymorphic Ni_xSi_y silicides on Si substrate; first-principles study2008

    • Author(s)
      T. Nakayama
    • Organizer
      29th Inc. Conf. Physics Semiconductors
    • Place of Presentation
      Rio de Janeiro, Brazil
    • Year and Date
      2008-07-29
    • Related Report
      2008 Annual Research Report
  • [Presentation] Physics of Schottky barrier at metal/high-k interfaces2008

    • Author(s)
      T.Nakayama, R.Ayuda, H.Nii, K.Shiraishi
    • Organizer
      2008 MRS Spring Meeting
    • Place of Presentation
      San Francisco, USA(招待講演)
    • Related Report
      2010 Final Research Report
  • [Book] Comprehensive Semiconductor Science and Technology(Eds.Mahajan, Kamimura, and Bhattacharya Section 1.12)(Atomic Structures and Electronic Properties of Semiconductor Interfaces)2011

    • Author(s)
      T.Nakayama, Y.Kangawa, K.Shiraishi
    • Publisher
      Elsevier B.V., Amsterdam
    • Related Report
      2010 Final Research Report
  • [Book] Comprehensive Semiconductor Science and Technology (Atomic Structures and Electronic Properties of Semiconductor Interfaces)2011

    • Author(s)
      T.Nakayama
    • Publisher
      Elsevier B.V, Amsterdam
    • Related Report
      2010 Annual Research Report
  • [Book] The Oxford Handbook of Nanoscience and Technology(Eds.Narlikar and Fu, Vol.III)(Role of computational science in Si nanotechnologies and devices)2010

    • Author(s)
      K.Shiraishi, T.Nakayama
    • Publisher
      Oxford University Press
    • Related Report
      2010 Final Research Report
  • [Remarks] ホームページ等

    • URL

      http://phys8.s.chiba-u.ac.jp/nakayamal/index.html

    • Related Report
      2010 Final Research Report
  • [Remarks]

    • URL

      http://phys8.s.chiba-u.ac.jp/nakayamal/index.html

    • Related Report
      2010 Annual Research Report
  • [Remarks]

    • URL

      http://phys8.s.chiba-u.ac.jp/nakayamal/index.html

    • Related Report
      2009 Annual Research Report
  • [Remarks]

    • URL

      http://phys8.s.chiba-u.ac.jp/nakayama/index.html

    • Related Report
      2008 Annual Research Report

URL: 

Published: 2008-04-01   Modified: 2020-05-15  

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