New Schottky-barrier theory responding to interface structures
| Project/Area Number |
20540310
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Condensed matter physics I
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| Research Institution | Chiba University |
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Principal Investigator |
NAKAYAMA Takashi Chiba University, 大学院・理学研究科, 教授 (70189075)
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2010: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2009: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2008: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Keywords | ショットキーバリア / 界面 / 第一原理計算 / 電荷中性準位 / シリサイド / 偏析 / ドーピング / 界面欠陷 / 強結合モデル / 原子空孔 / 格子間原子 / 界面構造 / 界面偏析 / InN界面 / オリゴアセン / 拡散 / 析出 / 界面ボンド混成 / 界面ボンド分極 / 混晶化 |
|---|
| Research Abstract |
Recent experi ments found unusual behaviors of Schottky barrier, i.e., the energy-level difference between metal and nonmetal materials, which cannot be explained by previous theories. By using quantum mechanical calculations, this project has shown that such behaviors originate from the selective atomic bonding, the formation of compounds, and the segregation of impurities at interfaces, and has constructed a new generalized theory of Schottky barrier.
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Report
(4 results)
Research Products
(91 results)
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[Journal Article]2010
Author(s)
K.Shiraishi
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Journal Title
"Role of computational science in Si nanotechnologies and devices" in "The Oxford Handbook of nanoscience and Technology"(Oxford University Press)
Pages: 1-46
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