Theoretical study of the origin of RHEED intensity oscillation during growth by molecular beam epitaxy and of the growth mode
| Project/Area Number |
20540313
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Condensed matter physics I
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| Research Institution | University of Yamanashi |
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Principal Investigator |
KAWAMURA Takaaki University of Yamanashi, 理事 (20111776)
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2010: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2009: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2008: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | エピタキシャル / 計算物理 / 表面・界面物性 / 結晶成長 / 電子回折 / エピタキシャル成長 / RHEED強度振動 / 分子線エピタキシー / 結晶成長様式 / 反射電子回折 / 半導体薄膜成長 / 反射電子回折波動関数 |
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| Research Abstract |
The origin of RHEED (Reflection High Energy Electron Diffraction) intensity oscillation is studied. In case of homo-epitaxial growth on Si (001), the origin is the phase difference between the wave reflected from the substrate and that from a growing layer. In case of homo-epitaxial growth on GaAs (001), the origin is not unique and depends on the orientation of the step edges of the growing layer relative to the incident beam. When the step edges are perpendicular to the incident beam azimuth, the atomic density is the primary origin. When the step edges are parallel to the incident beam azimuth, the step density is the primary origin. The results should be quite useful as they are expected to be applied to monitoring and controlling epitaxial growth of nano-materials.
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Report
(4 results)
Research Products
(27 results)
